PECVD法淀积氟碳掺杂的氧化硅薄膜表征

以正硅酸乙酯（ＴＥＯＳ）和八氟环丁烷（Ｃ４Ｆ８）为原料,采用等离子体增强化学气相淀积（ＰＥＣＶＤ）方法制备了氟碳掺杂的氧化硅薄膜（ＳｉＣＯＦ）．样品的Ｘ射线光电子能谱（ＸＰＳ）和傅立叶变换红外光谱（ＦＴＩＲ）分析表明薄膜中含有Ｓｉ－Ｆ、Ｓｉ－Ｏ、Ｃ－Ｆ、Ｃ－ＣＦ_ｘ、ＣＦ₂等构型．刚淀积的薄膜的折射率约为１．４０．对暴露在空气中以及在不同温度下退火后薄膜的折射率做了测量,并对其变化机理进行了讨论,同时表明了理想的淀积温度应是３００℃．     

反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。     

ECR Plasma CVD淀积光电器件介质膜的工艺模拟

以实验数据为基础,运用人工神经网络方法,建立了电子回旋共振等离子体化学气相沉积（ＥＣＲ Ｐｌａｓｍａ ＣＶＤ）淀积硅的氮、氧化物介质膜的折射率、速率与气流配比Ｑ（Ｎ２）／Ｑ（ＳｉＨ４）和Ｑ（Ｏ２）／Ｑ（ＳｉＨ４）关系的数学模型,此模型在给定气流配比Ｑ（Ｎ２）／Ｑ（ＳｉＨ４）和Ｑ（Ｏ２）／Ｑ（ＳｉＨ４）时所预测的成模折射率跟实验值符合得很好,为ＥＣＲ Ｐｌａｓｍａ ＣＶＤ淀积全介质光学膜的工艺打下坚     

硅外延发展趋势

本文综述了硅外延的三大发展趋势，指出降低外延温度是外延发展的迫切要求，同时比较了分子速外延（ＭＢＥ）、光能增强化学汽相淀积（光ＣＶＤ）、等离子体增强化学上淀积（ＰＥＣＶＤ）、超高真空化学汽相淀积（ＵＨＶＣＶＤ）的优缺点，指出ＵＨＶＣＶＤ和ＰＥＣＶＤ二者合二为一是最具应用前景的方法。其次，论述了异质外延和ＳｉＧｅ／Ｓｉ超晶格材料的应用前景。最后，论述了外延生长的原位监测和外延膜的测试技术。     

PECVD制备新型介质薄膜碳氮化硅工艺性能研究

研究了ＰＥＣＶＤ法制备新型介质膜碳氮化硅（ＳｉＣｘＮｙ：Ｈ）的工艺参数对淀积过程的影响。讨论了退火对该薄膜的影响，发现经退火后，其电阻率有明显的下降，氢含量也大大减少，但是膜的结构仍然是非晶态的。最后对该薄膜的特性进行测试，表明碳氮化硅薄膜具有较好的绝缘性能。     

硅外延发展趋势

本文综述了硅外延的三大发展趋势，指出降低外延温度是外延发展的迫切要求；同时比较了分子束外延（ＭＢＥ）、光能增强化学汽相淀积（光ＣＶＤ）、等离子体增强化学汽相淀积（ＰＥＣＶＤ）、超高真空化学汽相淀积（ＵＨＶＣＶＤ）的优缺点，指出ＵＨＶＣＶＤ和ＰＥＣＶＤ二者合二为一是最具应用前景的方法。其次，论述了异质外延和ＳｉＧｅ／Ｓｉ超晶格材料的应用前景。最后，论述了外延生长的原位监测和外延膜的测试技术。     

高取向锐钛矿TiO2薄膜的MOCVD法制备与表征

采用热壁低压ＭＯＣＶＤ方法，以Ｔｉ（ＯＣ４Ｈ９）４为源在ＳｉＯ２／Ｓｉ衬底上制备出高取向锐钛矿ＴｉＯ２薄膜。用Ｘ射线衍射技术研究了沉积温度和衬底对薄膜的结构和相组成的影响规律，采用ＸＰＳ和ＳＥＭ分别研究了薄膜的组成和形貌，结果表明，当沉积温度为５００＾０Ｃ和６００＾０Ｃ时，薄膜为锐钛矿结构，３００＾０Ｃ和４００＾０Ｃ地，薄膜以无定形结构为主，薄膜的组成为ＴｉＯ２，衬底影响薄膜的相组成，不同沉积温度     

两步退火形成钛硅化物和氮化物研究

模拟自对硅化物技术的两退火工艺，对超高真空（ＵＨＶ）下制备的Ｔｉ／Ｓｉ样品依次进行低温退火、腐蚀和高温退火。利用俄歇微探针（ＡＥＳ）和Ｘ射线衍射的（ＸＲＤ）分析样品的组分及晶相、发现高温退火后，薄膜内同时生成了Ｔｉ的硅化物及氮化物，这对发展ＭＯＳ器件工艺中自对硅、氮化物技术很有意义。另外，还利用扫描电（ＳＥＭ）观察了薄膜形貌，用Ｖａｎ ｄｅ Ｐａｕｗ法测量薄膜电阻。     

(Ph,La)TiO_3铁电薄膜的表面态分析

利用（Ｐｈ,Ｌａ）ＴｉＯ３陶瓷靶材,采用射频磁控溅射技术室温淀积,其后在６００℃下退火,制备ＰＬＴ铁电薄膜。通过对薄膜进行ＸＰＳ和ＥＤＡＸ分析,发现薄膜表面富钛。与利用其它工艺技术如多离子束反应共溅射、ｓｏｌ－ｇｅｌ等技术制备的ＰＬＴ铁电薄膜进行对比可以看出,利用不同技术制备的铁电薄膜,具有不同的表面态。     

PECVD法淀积氮化硼薄膜场发射特性研究

用 Ｂ２Ｈ６和 ＳｉＨ４作反应气体,通过射频等离子体增强化学气相淀积（ＲＦ－ＰＥＣＶＤ）方法,在 Ｓｉ（１００）面上沉积生长ＢＮ薄膜,用Ｓ－５２０扫描电子显微镜对所得薄膜进行观测,并用红外透射光谱测试分析了膜的成分。在室温、压力为 ８ × １０－４ Ｐａ条件下,对 ＢＮ薄膜的电流一电压特性进行测量,并得到了 Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ特性曲线,ＢＮ膜的场发射开启电场为９ Ｖ／μｍ,在电场３７．５ Ｖ／μｍ时,电流密度达到２４．８ ｍＡ／ｃｍ２。     

微波热处理在钛的硅化工艺中的应用

采用微波等离子体退火方法使溅射的金属Ti膜与Si(111)衬底发生固相反应,直接生成低阻态的金属硅化物薄膜,XRD检测显示最终生成的C54相TiSi2在Si(111)衬底上有明显的织构,证明了微波等离子体退火应用于钛的硅化工艺中的可行性.     

Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp² bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by thermal annealing of the high density, as-deposited a-C:H films. Furthermore, not only the density itself but also the variation of density with thermal annealing need to be elucidated in order to understand the dry etch properties of annealed a-C:H films.     

Investigation of the aluminum oxide/Si(1 0 0) interface formed by chemical vapor deposition

Thin films of aluminum oxide were deposited using trimethylaluminum and oxygen. The deposition rate was found to decrease with increasing temperature. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to investigate the film/substrate interface. When dry O₂ was used during deposition, the film/substrate interface was free of any silicon dioxide or aluminum silicate phase. On annealing the as-deposited films in Ar, a layer of silicon dioxide film formed at the interface. XPS results indicated that the O/Al ratio in the as-deposited films was higher than that in stoichiometric Al₂O₃. However, the ratio was found to decrease in the annealed samples suggesting that excess oxygen present in the deposited films is responsible for the formation of interfacial silicon dioxide layer. Interfacial phase formation was observed in the as-deposited samples, when small amounts of ozone along with oxygen were used as the oxygen precursor.     

Deposition of ZnS thin films by photochemical deposition technique

ZnS thin films have been deposited on a glass substrate by photochemical deposition (PCD) technique from an aqueous solution. The effect of pH and stirring speed of the solution on deposition has been studied. The optical transmission spectra of the solutions have been recorded before and after deposition and also for the deposited film. The as-deposited and annealed films were characterized by X-ray diffraction (XRD) and it is observed that the crystallinity of the deposited films is improved by annealing at various temperature from 100 to 500 °C. The surface coverage of the film has been studied using optical microscope.     

Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods

Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.     

X-ray photoelectron spectroscopic studies of sprayed CdS films

The chemical composition of sprayed CdS films has been evaluated using X-ray photoelectron spectroscopy. The general impurity content in the film is discussed, throwing light on the pyrolysis reaction involved in CdS deposition. Further, the stoichiometry of these films is studied as a function of process parameters such as pyrolysis temperature, Cd/S ratio in the solution, deposition rate and film thickness. A definite correlation is observed between composition and process parameters. The compositional variation appears to be related to the structure of CdS films as well as the growth mechanism. The effects induced by annealing in nitrogen, hydrogen and ambient air are also discussed. Hydrogen and nitrogen annealing is responsible for oxygen desorption from CdS. On the other hand air annealing induces stoichiometric variations along with oxygen intake in the films.     

退火对反应磁控溅射制备ITO薄膜性能影响

采用铟锡合金靶 (铟 锡 ,90 - 10 ) ,通过直流反应磁控溅射在玻璃基片上制备出ITO薄膜 ,并在大气环境下高温退火处理。研究了退火温度对薄膜结构、光学和电学性能的影响。研究表明 ,随着退火温度升高薄膜的电学特性得到很大提高     

铜上采用镍过渡层化学气相沉积金刚石薄膜的研究

采用镍过渡层研究了铜基片上金刚石薄膜的化学气相沉积．镍过渡层与铜基底间在高温退火条件下形成的铜镍共晶体明显地增强了金刚石薄膜与铜基片之间的结合力．用扫描电子显微镜和激光Ｒａｍａｎ谱研究了薄膜的形貌和质量;采用高温氢等离子体退火工艺在基片表面形成的铜镍碳氢共晶体上抑制了无定形碳和石墨的形成,有利于金刚石薄膜的生长．金刚石薄膜的均匀性受到共晶体的均匀性的影响．     

Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N₂ and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing.     

工艺参数对纳米颗粒Cu/SiO_2复合薄膜结构和光谱特性的影响

用离子束溅射法制备了具有反常光吸收特性的纳米颗粒CU／SiO2复合薄膜。获得了在离子来参数一定时，基片温度、膜料的沉积时间和镀膜后的保温时间等工艺参数对这种薄膜结构和光学特性的影响规律，并对纳米颗粒Cu／SiO2复合薄膜的反常光吸收特性作了计算和解释。