太赫兹与硅光子技术融合应用展望

本文讨论了硅光子技术的发展现状,尤其对于其中进行光电,电光转换的主要模块的性能指标进行了介绍, 详细 阐述了全芯片集成的硅光子技术的优缺点, 对其在光控相控阵雷达领域的潜在应用进行了探讨。提出了将硅光子技术应 用于太赫兹雷达系统的初步设想。     

Silicon Nanocrystals as an Enabling Material for Silicon Photonics

Silicon nanocrystals (Si-nc) is an enabling material for silicon photonics, which is no longer an emerging field of research but an available technology with the first commercial products available on the market. In this paper, properties and applications of Si-nc in silicon photonics are reviewed. After a brief history of silicon photonics, the limitations of silicon as a light emitter are discussed and the strategies to overcome them are briefly treated, with particular attention to the recent achievements. Emphasis is given to the visible optical gain properties of Si-nc and to its sensitization effect on Er ions to achieve infrared light amplification. The state of the art of Si-nc applied in a few photonic components is reviewed and discussed. The possibility to exploit Si-nc for solar cells is also presented. In addition, nonlinear optical effects, which enable fast all-optical switches, are described.     

Towards foundry approach for silicon photonics: silicon photonics platform ePIXfab

Fabless access to wafer-scale silicon photonics technology is moving silicon photonics closer to becoming a mainstream technology and opens up new exciting areas for research at the same time. It is only by using wafer-scale technology that this emerging field will be able to realise its promise: to become a disruptive technology. At the basis of the rationale for silicon photonics is a complex of photonic functions integrated on a single chip, coupled to a stable, high-yield volume fabrication technology base. ePIXfab is a service platform offering R oriented access to state-of-the-art 200 mm wafer-scale CMOS technology optimised for silicon photonics purposes.     

Silicon Photonics

After dominating the electronics industry for decades, silicon is on the verge of becoming the material of choice for the photonics industry: the traditional stronghold of III-V semiconductors. Stimulated by a series of recent breakthroughs and propelled by increasing investments by governments and the private sector, silicon photonics is now the most active discipline within the field of integrated optics. This paper provides an overview of the state of the art in silicon photonics and outlines challenges that must be overcome before large-scale commercialization can occur. In particular, for realization of integration with CMOS very large scale integration (VLSI), silicon photonics must be compatible with the economics of silicon manufacturing and must operate within thermal constraints of VLSI chips. The impact of silicon photonics will reach beyond optical communication-its traditionally anticipated application. Silicon has excellent linear and nonlinear optical properties in the midwave infrared (IR) spectrum. These properties, along with silicon's excellent thermal conductivity and optical damage threshold, open up the possibility for a new class of mid-IR photonic devices     

Future prospects of silicon photonics in next generation communication and computing systems

The recent progress is reviewed and future prospects of silicon photonics in next generation communication and computing systems are probed. Leveraging the many-billion-dollar complementary metal-oxide-semiconductor (CMOS) industry, silicon photonics has promising prospects for realising very large-scale electronic and photonic integrated circuits with thousands of optical components and millions of transistors in the future to support very demanding integrated systems needs of next generation computing and communications. There are also a number of significant challenges in fulfilling such prospects.     

Silicon photonics in China

Silicon photonics, particularly its compatibility with existing silicon microelectronic technology, has been increasingly studied in recent years. China sees the potential impact on the sustainability of its economic development and is increasing the investment in this new research area. But, the lack of research and manufacture accumulation in silicon microelectronic technology will weigh down the pace of silicon photonics research in China in the years to come.     

Fast Reversible Phase Change Silicon for Visible Active Photonics

Both amorphous and crystalline silicon are ubiquitous materials for electronics, photonics, and microelectromechanical systems. On‐demand control of Si crystallinity is crucial for device manufacturing and to overcome the limitations of current phase‐change materials (PCM) in active photonics. Fast reversible phase transformation in silicon, however, has never been accomplished due to the notorious challenge of amorphization. It is demonstrated that nanostructured Si can function as a PCM, since it can be reversibly crystallized and amorphized under nanosecond laser irradiation with different pulse energies. Reflection probing on a single nanodisk's phase transformations confirms the distinct mechanisms for crystallization and amorphization. The experimental results show that the relaxation time of undercooled silicon at 950 K is 10 ns. The phase change provides a 20% nonvolatile reflectivity modulation within 100 ns and can be repeated over 400 times. It is shown that such transformations are free of deformation upon solidification. Based on the switchable photonic properties in the visible spectrum, proof‐of‐concept experiments of dielectric color displays and dynamic wavefront control are shown. Therefore, nanostructured silicon is proposed as a chemically stable, deformation free, and complementary metal–oxide‐semiconductor compatible (CMOS) PCM for active photonics at visible wavelengths.     

Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.     

A Two-Wafer Approach for Integration of Optical MEMS and Photonics on Silicon Substrate

This letter reports a novel two-wafer approach which demonstrates an integration of optical microelectromechanical system (MEMS) devices and photonics on a silicon substrate. The great advantage of this novel wafer bonding scheme is the ability to maintain the optical axis of the optical MEMS device at the same axis as the optical components. The bonded two wafers which are partially processed, which allows for further processing on the wafer after bonding. Thus, the critical alignment issue is resolved for devices requiring precise alignment in x-/y-/z-axis. Individual functionalities of optical MEMS device and optical coupling between silicon waveguide, fibers and ball lens are demonstrated. This technology shows the potential for integrating silicon photonics integrated circuit and MEMS components with reconfiguration functions on a single silicon substrate.      

Avalanche photodiodes on silicon photonics

Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or Ⅲ-Ⅴ material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.     

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.     

面向中红外应用的硅基光电子学最近研究进展

随着信息传递、处理以及存储能力要求的不断提升,传统的近红外通信波段已呈“容量紧缩”之势。而工艺与CMOS兼容、结构简单、成本低廉的硅基光电子技术在中红外信号传输和处理方面已经显示出独特优势,有望在中红外波段实现大规模集成,在非线性光学等领域实现新的飞跃。首先介绍了硅基光电子技术在中红外应用中的优势以及目前研究过程中所遇到的困难和挑战;其次结合材料属性和结构特性对一些基本元件（如波导、分束/合束器、二极管）等在中红外领域的最新研究成果进行了介绍;最后对近5年来在中红外波段所实现传感应用的非线性光学硅基器件（基于FWM的非线性光学器件、频率梳）和面向中红外通信应用的激光器、调制器、光电探测器进行了成果介绍,并对研究进展进行了总结。     

硅光子学

硅光子学有六个主要研究领域,包括产生光、在硅中选择地引导和传输光、编码光、探测光、包装器件和智能地控制这一切光子功能。综述了以上各领域的研究进展。     

62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud

Silicon photonics has attracted a great deal of interest for integrated photonics systems due to its large-scale electronics-photonics integration on a chip by leveraging the fabrication process of the complementary-metal-oxide semiconductor(CMOS)foundries[1?5].Germanium-on-silicon(Ge-on-Si)waveguide photodetector(PD)is an indispensable building block of silicon photonics technology which requires high sensitivity.     

Silicon integrated photonics begins to revolutionize

The advances in Si technology and the rapid growth of broadband communication via optical fiber allow silicon integrated photonics to begin revolutionizing the electronic devices, circuits, and systems. The pace of technological development has been recently speeded up. Using microfabrication technology we are now able to make waveguide structures and optical components from Si-based materials, such as silicon oxynitride or doped silica. Visible light can be obtained from Si-based materials such as Si quantum wire/dots and Si nanoclusters embedded in insulators. The remaining issues are to develop processes and device structures to make Si photonics economically viable with system and device performance comparable to their existing counterparts. Recent efforts have demonstrated that the light-emitting efficiency can be enhanced greatly and that the lasing effect is also possible with the nanostructures. The impact of these moves will be revolutionary. The successful development of Si integrated photonics will enable on-chip optical interconnects for future microprocessor and giga-scale circuits, chip-to-chip fiber interconnection and will greatly decrease the cost for fiber-to-home connection. This will be one of the major moves for the next technology revolution. The present article discusses some recent developments on these aspects.     

Silicon Photonics: CMOS Going Optical

For almost 50 years, silicon microelectronics has been the engine of the modern information revolution. Complex microprocessors, dense memory circuits, and other digital and analog electronics produced by the $100 billion silicon industry mainly serve a single goal - to process more and more data faster and faster using smaller and smaller components. In this everlasting quest, the silicon industry has successfully overcome many critical issues that were initially considered to be impassible road blocks. Recent progress in silicon compatible photonics is driving high density integration of photonic and electronic components manufactured by CMOS-based technology on the same platform.This Special Issue presents a set of review papers addressing major challenges and summarizing recent progress in the several subfields of Si-based photonics.     

硅基光电器件研究进展

在信息处理和通信技术中,光电子器件起着越来越重要的作用,然而,因为硅是间接湿润地导体,度图把光电子器件集成在硅微电子集成电路上却遇到很大困难,为解决这一困难,人们发展了多种与同电子集成电路兼容的光电子器件制造技术,本文介绍最近几年这方面技术的发展状况。     

光子学在材料工业中的应用

评述光子学在材料工业的光学硅、纳米材料、光子晶体和集成光路中的应用。     

Electronics Letters - [editorial]

It is our great pleasure to introduce a special 'Insight' section in this issue containing six invited Insight Letters written by leading researchers in the rapidly-developing field of silicon photonics. There is currently great interest worldwide in finding ways to successfully integrate optoelectronic devices on a silicon chip, and we have certainly seen a diverse range of research activities in this area published in Electronics Letters over the last few years. Written by experts working at research institutions in the US, China, Europe and the UK, these letters offer the authors' personal perspectives on the progress, future directions and potential applications of this technology. Together they paint a global picture of silicon photonics which we hope you will enjoy reading.     

硅光子器件及其集成技术的研究

主要探讨了偏振分集光路、可调光衰减器、波导耦合型锗光电探测器等硅光器件的研究进展,分析了其结构及技术参数,随后探讨了VOA-PD单片集成技术以及VMUX单片集成技术两种硅基单片集成技术,指出硅光子器件的性能指标已经能满足现代光纤通信系统的要求。