光学浸没型双色HgCdTe光导探测器

本文利用光学浸没原理以及叠层双色探测器工作原理,研制出浸没型3μm～5μm,8μm～12μm双色HgCdTe光导探测器.3μm～5μm探测器峰值探测率可达10~(11)cmHz~(1/2)/W;8μm～14μm探测器峰值探测率达7.0×10~(10)cmHz~(1/2)W.峰值响应率可达10~3V/W.     

高探测率的GaAs/AlGaAs多量子阱长波长红外探测器

探测器采用50周期GaAs/Al_(0.3)Ga_(0.7)As多量子阱结构的分子束外延材料,并制成直径为320μm的台面型式单管.其器件主要性能和指标如下:探测峰值波长为 9.2 μm,工作温度为77 K,峰值电压响应率 R_v= 9.7× 10~5V/W,峰值探测率 D~*= 6.2 × 10~(10)cmHz~(1/2)/W.     

新型Ge_xSi_(1-x)/Si异质结远红外探测器

用分子束外延技术结合硅平面工艺研制成了Ge_xSi_(1-x)/Si异质结远红外探测器。测试结果表明,界面势垒高度低于0.09eV,预计对应的工作波长可从2μm到12μm以上。50K时的探测率(黑体_(873k)~*)优于2×10~8cm·Hz~(1/2)/W,30K为6×10~8cmHz~(1/2)/W,对500K黑体,30K工作温度下D_(500k)~*为1.6×10~8cm·Hz~(1/2)/W。由于探测器为宽带型,虽然峰值D~*并不很高,但在30℃的环境辐射背景下,对人体温度的辐射也有较强烈的响应。     

卫星用长波HgCdTe探测器的研究

报道了卫星用长波HgCdTe红外探测器的性能。提出用波段探测率D_(Δλ)~*的概念来表征在105K下特定波段10.5～12.5μm工作的探测器性能。D_(Δλ)~*的值在1～3×10~(10)cmHz~(1/2)W~(-1)范围内,可靠性试验结果表明,探测器的失效率小于2.5×10~(-5)。     

室温长波光导探测器研究

从理论和实验上详细研究了室温长波HgCdTe光导探测器,提出了室温光导半导体的广义优值,计算了10.6μm HgCdTe探测器的优值和极限性能与组分和掺杂的关系。用HgCdTe外延层制作了光导探测器,描述了它的性能。结果表明10.6μm室温光导探测器的最佳探测率可高于1×10~8cmHz~(1/2)/W,已接近一般的热敏型探测器性能。     

长波GaAs/AlGaAs量子阱红外探测器

随着分子束外延技术的日益成熟,以及对导带内子带间光学跃迁性质的深入研究,GaAs/AlGaAs量子阱红外探测器的研制已引起人们的高度重视。该探测器的响应波段从8μm至14μm,具有响应速度快(皮秒量级),灵敏度高(D~*～10~(10)cmHz~(1/2)/W),峰值波长可通过改变材料的生长参数(如阱宽、垒高、合金含量等)而调节的特点。与     

高D~*、快响应钛酸锆酸铅热电探测器

已制得D~*(500°K,1.1)=7×10~8厘米·赫~(1/2)/瓦的大面积PZT探测器和最小响应时间为5毫微秒的快速探测器。热电系数为27毫微库仑/厘米~2°K及对此器件测得的材料灵敏值为2.8×10~(-9)库伦厘米/焦耳。     

高温超导红外探测器的研制

采用高温超导薄膜YBaCuO和GdBaCuO研制超导红外探测器。将超导膜通过光刻湿法腐蚀成形后,用剥离技术制备金电极并合金化,热压焊接4根引线,超导芯片安装在抽空窗口为KRS-5的红外探测器杜瓦瓶中。77K超导红外探测器的测试性能为:NEP_(min)=1.6×1~(-9)W/Hz~(1/2),D_(bbmax)~*=4.15×10~7cmHz~(1/2)/W,R_(max)(500K)=136V/W,τ_(min)=8.8ms,λ_p=13.6μm。对超导器件的稳定性考察得出:微桥寿命最短,长桥次之,蛇形较长。一支蛇形器件经过数十次的冷热循环和电测试,寿命已超过5个月。     

高温超导红外探测器的研制

用在两种衬底(SrTiO_3和LaAlO_3)上生长的YBa_2Cu_3O_(7-x)。薄膜制成高灵敏的热敏型高温超导红外探测器。经500K标准黑体的测量,在10Hz调制频率时,以SrTiO_3为衬底的器件,D~*(500,10,1)达8.2×10~8cm·Hz~(1/2)/W,NEP(500,10,1)达1.6×10~(10)W/Hz~(1/2);以LaAlO_3为衬底的器件,NEP(500,10,1)达10~(-11)W/Hz~(1/2)。还测量并分析了D~*和NEP随频率的变化和噪声频谱。     

长波大面积HgCdTe光导红外探测器的研究

研制的长波大面积HgCdTe光导红外探测器的面积为2.1×2.1mm~2,在80K时探测率D_p~*=1.86×10~(10)cmHz~(1/2)W~(-1),响应率R_p=386VW~(-1),长波限λ_(co)(50%)>18μm.还研制了带有低温聚光器组合件结构的新型探测器,D_p~*=7.3×10~(10)cmHz~(1/2)W~(-1),λ_(co)(50%)>16μm.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks