热压烧结工艺对AlN陶瓷显微结构及性能的影响

以直接氮化法制备的AlN粉体为原材料,添加质量分数为5％ 的Y2O3做烧结助剂,采用热压烧结工艺制备AlN陶瓷.研究烧结温度和压力对AlN陶瓷显微结构、相对密度和热导率的影响.结果表明:随着烧结温度的升高,AlN陶瓷的晶粒长大,第二相逐渐增多,热导率和相对密度均为先增大后减小;随着压力的增大,AlN陶瓷的晶粒逐渐细小,气孔率减少,热导率和相对密度都显著增大.确定AlN陶瓷的最优烧结条件如下:温度为1800℃,压力为50 MPa.     

AlN/玻璃复合材料的相分布对导热性能的影响

以热压烧结方法在850～1000℃的低温下制备了Al/玻璃复合材料,通过组成变化研究了复合材料热导率的变化规律,利用SEM、TEM、XRD等方法观察了AlN/玻璃复合材料的显微结构和相组成与分布,讨论了复合材料的显微结构和相组成对热导率的影响,结果表明:AlN/玻璃复合材料的热导率随玻璃相的减少而增加,低温烧结的复合材料的热导率可以达到10W/m·K以上,材料的相分布对热导率的影响表现为:当玻璃相减少,AlN晶粒相互接触时,有利于热导率的提高;当材料内部以AlN晶相为主时,材料出现晶体的导热特征,即热导率随温度的升高而下降。     

高热导率氮化铝陶瓷的研究进展

简要介绍了AlN陶瓷的导热机理和影响因素,主要报道制备氮化铝陶瓷过程中提高热导率的措施。阐述了添加剂的作用机理,以及不同添加剂对AlN陶瓷的致密化和烧结温度的影响,概括了目前AlN陶瓷的成型和烧结方法,分析了后续热处理对AlN陶瓷显微结构和热导率的影响。     

添加CaF2-YF3的AlN陶瓷的热导率

用CaF2和YF3做添加剂，在1750℃制备了热导率高于170W/m.K的的AlN陶瓷，并用XRD和SEM研究了AlN陶瓷在烧结过程中的相组成，微结构以及晶格参数的变化，并讨论了其对热导率的影响，研究发现，当使用CaF2-YF3做添加剂时，微结构差异对AlN陶瓷热导率的影响很小，AlN陶瓷的热导率主要由AlN晶格氧缺陷浓度决定，由于CaF2-YF3能有效降低AlN颗粒表面的氧含量，从而有利于获得高的热导率。     

Li2O对SPS烧结AlN陶瓷致密化、显微结构和导热性的影响

研究了低温烧结助剂Li2O对SPS烧结AlN陶瓷烧结致密化过程、烧结体显微结构和导热性的影响.研究表明:在SPS烧结过程中,烧结助剂Li2O和Sm2O3(或Y2O3)的加入使AlN试样开始收缩并进入烧结初期阶段的温度从1550℃左右下降到1200℃以下;同时Li2O使AlN试样的烧结温度显著降低,完全致密化温度降低到1650℃左右.烧结体的显微结构表明:Li2O的加入有助于形成润湿性良好的液相,促进AlN陶瓷的液相烧结;但不利于快速烧结坯体中气体的扩散与逸出,使试样的致密度受到影响.同时,Li2O影响AlN晶粒的发育,使液相润湿性提高,晶界相均匀分布,增加了晶粒界面上的声子散射,对AlN材料的热导率产生不利影响.同时,添加1.0wt%Li2O和1.5wt%Sm2O3的AlN试样的热导率低于仅添加1.5wt%Sm2O3的试样.     

热压烧结AlN(Y_2O_3)陶瓷热导率的温度关系

采用热压烧结技术,以Y2O3为烧结助剂制备AlN陶瓷。闪光法测试AlN陶瓷在室温~200℃的温度关系。结果表明,AlN陶瓷热导率随温度升高而降低;气孔对AlN陶瓷热导率随温度变化的速率有抑制作用,气孔率越小(致密度越高),热导率对温度变化越敏感;AlN陶瓷钇铝酸盐晶界相含量对热导率随温度变化的速率有促进作用,钇铝酸盐含量越高,热导率对温度变化越敏感。     

添加Y2O3-Dy2O3的AlN陶瓷的烧结特性及显微结构

本文探索了以自蔓延高温（SHS）法合成并经抗水化处理的AlN粉为原料,以Y₂O₃－Dy₂O₃作为助烧结剂的AlN陶瓷的烧结特性及显微结构．结果表明,晶界处存在Dy₄Al₂O₉、Y₄Al₂O₉、DyAlO₃、Dy₂O₃和DyN等第二相物质,随烧结温度变化,第二相的种类、数量和分布不同,显微结构也随之变化,从而影响AlN的热导率．在1850℃下,可获得热导率为148W／m·K的AlN陶瓷．     

高压热处理对AlN陶瓷显微结构及导热性能的影响

热处理是AlN陶瓷调整结构、改善性能的有效手段.利用国产六面顶压机,在5.0GPa高压条件下,对高压烧结制备的AlN(Y2O3)陶瓷进行了热处理,研究了高压热处理对AlN陶瓷显微结构及导热性能的影响.结果表明:经5.0GPa/970℃/2h高压热处理后的AlN陶瓷材料与未热处理的试样相比,晶粒尺寸显著增大,晶粒形状越发规整,第二相均位于晶界处或者三角晶界区域,热导率达到了173.2W/(m.K),是未经过热处理试样的2.2倍.但是,将高压热处理时间延长到4h,AlN陶瓷的气孔增大,出现了反致密化现象,热导率也降低到80.9W/(m.K).     

一种低温共烧AlN陶瓷基片的排胶技术

介绍一种由高热导率AlN陶瓷和金属W共烧制备低温AlN陶瓷基片的排胶技术．研究了排胶过程中残余碳对AlN陶瓷基片相组成、烧结特性和微观结构的影响．结果表明：两步排胶法可以较好地解决W氧化及AlN陶瓷颗粒表面吸附残余碳的问题．     

低温烧结AlN陶瓷的微结构和热导率

采用CaF2，Y2O3和Li2CO3做添加剂，在低温下制备了高热导率的AlN陶瓷，通过SEM，TEM和XRD研究了AlN陶瓷在烧结过程中微结构及晶格常数的变化及其对热导率的影响。研究发现，当使用CaF2-Y2O3做添加剂时，液相对晶粒浸润性较差。不利于AlN晶格的纯化。而添加Li2O-CaF2-Y2O3的AlN陶瓷在烧结温度之前已经完成了液相的重新分布，液相与AlN晶粒之间有较好的浸润性，这促进了AlN陶瓷的致密化和AlN晶格的纯化，有利于获得较高的热导率。     

Effect of grain-boundary stabilization on the strength, thermal conductivity, and dielectric properties of aluminum nitride

The thermal conductivity, dielectric properties, and strength of A1N ceramics were studied. The ceramics were prepared by semidry pressing and sintering. Increasing the sintering time was found to increase the thermal conductivity of the ceramics up to 200 W/(m K). A nonequilibrium-phonon-propagation method was used to analyze the effect of grain boundaries and processing conditions on the thermal conductivity of the ceramics.     

Microstructure and thermal conductivity of spark plasma sintering AlN ceramics

Abstract

Dense aluminium nitride ceramics were prepared by spark plasma sintering at a lower sintering temperature of 1700°C with Y₂O₃, Sm₂O₃ and Dy₂O₃ as sintering additives respectively. The effects of three kinds of sintering additives on the phase composition, microstructure and thermal conductivity of AlN ceramics were investigated. The results showed that those sintering additives not only facilitated the densification via the liquid phase sintering mechanism, but also improved thermal conductivity by decreasing oxygen impurity. Sm₂O₃ could effectively improve thermal conductivity of AlN ceramics compared with Y₂O₃ and Dy₂O₃. Observation by scanning electron microscopy showed that AlN ceramics prepared by spark plasma sintering method manifested quite homogeneous microstructures, but AlN grain sizes and shapes and location of secondary phases varied with the sintering additives. The thermal conductivity of AlN ceramics was mainly affected by the additives through their effects on the growth of AlN grain and the location of secondary phases.     

烧结技术对99BeO陶瓷材料结构与性能影响

系统研究了传统烧结方法、台阶式烧结方法和两步烧结方法对99BeO陶瓷微结构和性能的影响.研究发现：台阶式烧结有助于99BeO陶瓷的晶粒细化,两步法烧结有助于提高99BeO陶瓷的热导率.实验优化了两步法中第一阶段烧结温度T1、第二阶段烧结温度T2及保温时间t等工艺参数.结果表明,在T₁为1630℃,T₂为1550℃,t为4h时可获得晶粒均匀、结构致密,热导率为308W/(m·K),密度为2.95g/cm³的99BeO陶瓷.     

晶界相和晶界对AlN陶瓷热导率的影响

本文研究了掺杂CaO Y2 O3热压烧结和常压烧结AlN陶瓷的晶界相及其产生过程和除氧机制 ;分析了两种烧结工艺烧制的AlN陶瓷的晶界成份 ;测定了不同晶界相含量和晶界成份对应的AlN陶瓷的热导率     

Study on microstructure and thermal conductivity of Spark Plasma Sintering AlN ceramics

Dense aluminum nitride (AlN) ceramics were prepared by Spark Plasma Sintering with rare-earth oxide and CaF₂ as sintering additives. The effect of sintering additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics was investigated. The results showed that those sintering additives not only promoted densification through liquid-phase sintering but also improved thermal conductivity by decreasing oxygen impurities. Thermal conductivities of samples sintered with optimum proportion of rare-earth oxide and CaF₂ were higher than those of other samples. During the Spark Plasma Sintering process, the microstructures, especially the content and distribution of secondary phases, played important roles on the thermal conductivity of AlN ceramics.     

热障涂层热导率的研究进展

简要回顾了热障涂层体系的发展,讨论了氧化锆陶瓷材料的传热规律,包括涂层微观结构、陶瓷成分等因素的影响.同时指出了改进陶瓷涂层热导率的方法和开发适用于更高温度下的陶瓷涂层材料的指导原则,并详细介绍了改善热障涂层热导率的研究现状.     

莫来石含量对钙长石/莫来石复相多孔陶瓷组织结构与性能的影响

以CaCO₃、SiO₂、α-Al₂O₃为原料, 采用泡沫注凝法制备了不同莫来石含量的钙长石/莫来石复相多孔陶瓷, 研究了莫来石含量对复相多孔陶瓷的体积密度、气孔率、抗压强度、热导率及微观组织和结构的影响. 结果表明, 莫来石含量对气孔率有很大的影响, 烧结过程中液相出现引起的收缩是气孔率下降的主要原因; 在气孔率相近的情况下, 莫来石含量较高试样的抗压强度和热导率也较高, 致密的孔壁、长柱状的莫来石晶粒使得复相多孔陶瓷的抗压强度提高. 所制备的钙长石/莫来石复相多孔陶瓷的开口气孔率介于60.8%~75.2%, 抗压强度为12.94~36.95 MPa, 热导率为0.30~1.33 W/(m·K).     

Preparation, characterization and properties of MgSiN2 ceramics

MgSiN₂ ceramics with and without sintering additives were prepared by hot uni-axial pressing. For the sintered samples the lattice parameters, secondary phases, density, oxygen and nitrogen content, microstructure, oxidation resistance, hardness, elastic constants, linear thermal expansion coefficient and thermal diffusivity were determined. By suitable processing, fully dense MgSiN₂ ceramics with an oxygen content <1.0 wt % could be obtained. The size of the MgSiN₂ grains increased with increasing hot-pressing temperature and time. Transmission electron microscopy (TEM) showed the absence of grain-boundary phases and that secondary phases are present as separate grains in the MgSiN₂ matrix. Scanning thermal microscopy (SThM) thermal imaging revealed a thermal barrier at the grain boundaries. The influence of the microstructure as well as the oxygen content and defect chemistry on the thermal diffusivity is limited. Supported by some theoretical considerations it is concluded that the thermal conductivity of the MgSiN₂ ceramic samples is determined by intrinsic phonon-phonon scattering and will not exceed 35 W m^-1K^-1 at 300 K in agreement with the maximum observed value of 21–25 W m^-1 K^-1.     

碳化硅陶瓷导热性能的研究进展EI北大核心

SiC陶瓷具有优异的力学性能、热学性能、抗热震性能、抗化学侵蚀性能和抗氧化性能,是热交换器设备的常用基体材料。由于原料、成型工艺、烧成工艺和烧结助剂等因素制约,SiC陶瓷含有较多气孔、晶界、杂质和缺陷,导致其常温热导率(≤270 W·m^(-1)·K^(-1))低于碳化硅单晶材料(6H-SiC,490 W·m^(-1)·K^(-1)),且不同制备工艺下热导率存在较大差异。本文主要分析了温度、气孔、晶体结构和第二相对SiC陶瓷导热性能的影响,归纳了热压烧结法、放电等离子烧结法、无压烧结法、重结晶烧结法和反应烧结法制备高导热SiC陶瓷的特点,对优化烧结助剂种类及含量、高温热处理和添加高导热第二相等改善SiC陶瓷导热性能的主要措施进行阐述,并展望了未来高导热SiC陶瓷的研究方向,为未来制备低成本、高导热SiC质热交换器提供理论参考。     

(YCa)F3助烧AlN陶瓷的显微结构和热导率

采用（ＣａＹ）Ｆ_３为助烧结剂，低温烧结（１６５０℃， ６ｈ）制备出热导率为２０８Ｗ／ｍ·Ｋ的ＡＩＮ陶瓷，在烧结过程中，热导率随保温时间的变化服从方程：λ（ｔ）＝λ∞－△λ（０）·ｅ~（－ｔ／ｒ）·用ＳＥＭ、 ＳＴｈＭ、 ＴＥＭ和 ＨＲＥＭ对 ＡＩＮ陶瓷的显微结构及其对热导率的影响进行了研究，结果表明，晶粒尺寸对ＡＩＮ陶瓷热导率的影响可以忽略，而分隔在ＡＩＮ晶粒之间的晶界相会降低热导率。