共查询到20条相似文献,搜索用时 0 毫秒
1.
《Photonics Technology Letters, IEEE》2009,21(16):1112-1114
2.
《Solid-State Circuits, IEEE Journal of》2009,44(4):1078-1088
3.
《Solid-State Circuits, IEEE Journal of》2008,43(10):2293-2302
This paper presents the design and analysis of ultra- low-voltage (ULV) high-frequency dividers using transformer feedback. Specifically, a differential-input differential-output injection-locked (IL) divider topology with transformer feedback and a wideband transformer-coupled (TC) divider with quadrature outputs are demonstrated, both of which can operate well at supply voltages as low as the device's threshold voltages. Fabricated in a standard 0.18-mum CMOS process, the ULV-IL divider measures an input frequency range from 16.1 GHz to 20 GHz while consuming a total power from 2.75 mW to 4.35 mW at 0.5 V supply, and the TC-divider measures an input frequency range of 27.8% from 15.1 GHz to 20 GHz with IQ sideband rejection of - 31 dBc while consuming power from 11.4 mW to 13.6 mW at 0.6 V supply. 相似文献
4.
Sin-Jhih Li Hsieh-Hung Hsieh Liang-Hung Lu 《Microwave and Wireless Components Letters, IEEE》2009,19(10):659-661
In this letter, a multi-gigahertz phase-locked loop (PLL) with a compact low-pass filter is presented. By using a novel dual-path control in the PLL architecture, the capacitance in the loop filter can be effectively reduced for high-level integration while maintaining the required loop bandwidth. Consequently, the noise resulted from off-chip components is therefore eliminated, leading to lower timing jitter at the PLL output waveforms. In addition, the timing jitter is further suppressed due to the use of decomposed phase and frequency detection. Based on the proposed techniques, a 10 GHz PLL is implemented in 0.18 mum CMOS for demonstration. Consuming a dc power of 113 mW from a 1.8 V supply, the fabricated circuit exhibits a locking range from 10.1 to 11 GHz. At an output frequency of 10.3 GHz, the measured peak-to-peak and rms jitter are 3.78 and 0.44 ps, respectively. 相似文献
5.
A forward body biasing (FBB) technique is employed by an extended true-single-phase-clock (E-TSPC) divide-by-2 circuit in 0.25 mu m CMOS for an efficient on-chip control of power and speed. By applying the forward body bias voltage of 0.4 V, the maximum operating frequency is improved by 78% while the current dissipation is increased only by 21%. As a result, the divider figure-of-merit is improved by 46%. The phase noise however is not significantly affected by the forward body biasing. We believe that the FBB technique can be an efficient means for on-chip scaling of speed and power in E-TSPC RF frequency divider circuits. 相似文献
6.
《Photonics Technology Letters, IEEE》2009,21(17):1208-1210
7.
Hui Zheng Shuzuo Lou Dongtian Lu Cheng Shen Tatfu Chan Luong H.C. 《Solid-State Circuits, IEEE Journal of》2009,44(2):414-426
This paper presents the design and integration of a fully-integrated dual-conversion zero-IF2 CMOS transceiver for 9-band MB-OFDM UWB systems from 3.1 GHz to 8.0 GHz. The transceiver integrates all building blocks including a variable-gain wideband LNA, a single combined mixer for both RF down-conversion in RX and up-conversion in TX, a fast-settling frequency synthesizer, and IQ ADCs and DACs. Fabricated in a standard 0.18- mum CMOS process, the receiver measures maximum S11 of - 13 dB, maximum NF of 8.25 dB, in-band IIP3 of better than -13.7 dBm, and variable gain from 25.3 to 84.0 dB. IQ path gain and phase mismatches of the receiver chain are measured to be 0.8 dB and 4 deg, respectively. The transmitter achieves a minimum output P-1 dB of -8.2 dBm, sideband rejection of better than -42.2 dBc, and LO leakage of smaller than - 46.5 dBc. 相似文献
8.
《Photonics Technology Letters, IEEE》2008,20(24):2069-2071
9.
Chung-Ting Lu Hsieh-Hung Hsieh Liang-Hung Lu 《Microwave and Wireless Components Letters, IEEE》2009,19(10):662-664
In this letter, a delay-locked loop (DLL) suitable for low-power and low-voltage operations is presented. To overcome the performance limitations, such as a restricted locking range and elevated output jitters, a novel voltage-controlled delay cell and a phase/frequency detector with a start controller are employed in the proposed DLL. Using a standard 0.18 mum CMOS process, the fabricated circuit exhibits a locking range from 85 to 550 MHz. The measured peak-to-peak and rms jitters at 550 MHz are 25.6 and 3.8 ps, respectively. Operated at a supply voltage of 0.6 V, the power consumption of the DLL circuit varies from 2.4 to 4.2 mW within the entire locking range. 相似文献
10.
《Microwave and Wireless Components Letters, IEEE》2008,18(9):587-589
11.
《Photonics Technology Letters, IEEE》2008,20(23):1908-1910
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13.
《Solid-State Circuits, IEEE Journal of》2009,44(11):3019-3029
14.
Dukju Ahn Dong-Wook Kim Songcheol Hong 《Microwave and Wireless Components Letters, IEEE》2009,19(4):227-229
A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively. 相似文献
15.
Zhaobing Tian Yang R.Q. Mishima T.D. Santos M.B. Johnson M.B. 《Photonics Technology Letters, IEEE》2009,21(21):1588-1590
Broad-area plasmon-waveguide interband cascade lasers with emission wavelengths near 7.5 mu m were demonstrated at temperatures up to 121 K in continuous-wave mode. Their threshold current densities and voltages varied from 72 A/cm2 and 2.1 V at 84 K to 400 A/cm2 and 2.7 V at 121 K, showing very efficient use of bias voltage (e.g., voltage efficiency of about 90% at 84 K) at this long wavelength. These plasmon-waveguide lasers also operated in pulsed mode at temperatures up to 165 K with emission wavelengths near 7.6 mum and threshold current density of 1100 A/cm2. 相似文献
16.
《Microwave and Wireless Components Letters, IEEE》2009,19(2):104-106
17.
《Microwave and Wireless Components Letters, IEEE》2008,18(8):551-553
18.
《Microwave and Wireless Components Letters, IEEE》2009,19(2):95-97
19.
《Photonics Technology Letters, IEEE》2009,21(16):1106-1108
20.
《Solid-State Circuits, IEEE Journal of》2009,44(9):2452-2462