激光清洗技术在微电子领域的应用

本文介绍了激光清洗技术在微电子领域的应用，对该技术在清除细微颗粒方面所具有的独到的优越性进行了探讨。     

微电子封装技术的发展与展望

微电子技术的发展,推动着微电子封装技术的不断发展、封装形式的不断出新。介绍了微电子封装的基本功能与层次,微电子坟技术发展的三个阶段,并综述了微电子封装技术的历史、现状、发展及展望。     

A statistical model to predict the performance variation of polysilicon TFTs formed by grain-enhancement technology

A statistical model to predict grain boundary distribution in the channel of a polysilicon thin-film transistor (TFT) is proposed. The model is valid for arbitrary transistor size to grain size ratio, and is particularly useful to predict the grain boundary distribution of recrystallized large-grain polysilicon TFTs where the transistor size is comparable to the grain size and gives significant device-to-device variation. The model has been extensively verified by comparing it with statistical data obtained from TFTs fabricated using metal-induced-lateral-crystallization and regular solid-phase epitaxial techniques. Good agreements between the experimental results and model prediction are demonstrated.     

Application of plasma immersion ion implantation doping tolow-temperature processed poly-Si TFTs

This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFTs). Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H₂-diluted phosphorus PIII can promote dopant activation more efficiently during RTA at 600°C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFTs resemble those of conventional II doped ones     

光刻技术在微细加工中的应用

介绍光刻技术中的曝光设备与技术,光刻工艺及工艺控制在集成电路微细加工中的应用。     

21世纪微电子光刻技术

介绍了248nm,193nm,157nm准分子激光投影光刻的发展过程和下一代光刻技术（NGL）的实用化前景。     

Inkjettable conductive adhesive for use in microelectronics and microsystems technology

Ink jet is an accepted technology for dispensing small volumes of material (50–500 picolitres). Currently traditional metal-filled conductive adhesives cannot be processed by ink jetting (owing to their relatively high viscosity and the size of filler material particles). Smallest droplet size achievable by traditional dispensing techniques is in the range of 150 μm, yielding proportionally larger adhesive dots on the substrate. Electrically conductive inks are available on the market with metal particles (gold or silver) <20 nm suspended in a solvent at 30–50 wt%. After deposition, the solvent is eliminated and electrical conductivity is enabled by a high metal ratio in the residue. Some applications include a sintering step. These nano-filled inks do not offer an adhesive function. Work reported here presents materials with both functions, adhesive and conductive. This newly developed silver filled adhesive has been applied successfully by piezo-ink jet and opens a new dimension in electrically conductive adhesives technology.The present work demonstrates feasibility of an inkjettable, isotropically conductive adhesive in the form of a silver loaded resin with a two-step curing mechanism: In the first-step, the adhesive is dispensed (jetted) and precured leaving a ‘dry’ surface. The second step consists of assembly (wetting of the 2nd part) and final curing.     

A 230-nW 10-s time constant CMOS integrator for an adaptive nerve signal amplifier

This paper describes a micropower CMOS integrator with an extremely large time constant for use in a variety of low-frequency signal processing applications. The specific use of the integrator in an implantable biomedical integrated circuit is described. The integrator is based on the OTA-C approach and a very small transconductance of 100 pA/V was achieved by cascading a short chain of transconductance-transimpedance stages. The time constant of the integrator is tunable between about 0.2 and 10 s, and any offset voltages at the output terminal can be trimmed out. The circuit was fabricated in a 0.8-/spl mu/m CMOS process, dissipates 230 nW from /spl plusmn/1.5 V power supplies (excluding the bias circuitry and output buffers) and has a core area of 0.1 mm/sup 2/. The integrator offers superior performance in terms of power consumption, die area and time constant when compared to previously published work.     

ICLAB: A computer simulated microelectronics laboratory for computer aided instruction in microelectronics

Microcomputers have had a significant effect on almost all aspects of daily life. Interestingly, one area that has not been strongly affected is the area of teaching people how to make the chips used to build the computer. ICLAB is a software package that provides useful support for computer aided instruction in the area of microelectronics manufacturing. The program was written to provide students with a simulated manufacturing laboratory which would allow them to “manufacture” a simple chip. Students use the program to carry out all of the steps needed to produce a chip in the same manner that would be used in a real laboratory except they never have to leave the computer. Processes that are used in a working laboratory are simulated in detail so the student actually processes the chip. Operations such as mask design, oxidation, diffusion, ion implantation, lithography and etching are included in the simulation.     

浅谈10kV配网状态检测技术的应用

文章介绍10设备主要故障类型以及常用的检测手段,并结合实际案例就10kV配网状态检测技术的应用以及对设备故障隐患进行检测和分析,采取措施加以防范,确保电网的运行安全。     

聚焦离子束(FIB)技术及其在微电子领域中的应用

FIB是一种将微分析和微加工相结合的新技术，在亚微米级器件的设计、工艺控制和失效分析等诸多领域发挥着非常重要的作用。本文将对聚焦离子束技术及其分析、加工的机理和性能作一介绍，并对该技术在微电子领域中的应用及发展作一综述。     

A novel technology to form air gap for ULSI application

In this letter, we develop a novel process to fill the interline space with air (dielectric constant=1). A silicon wafer, whose face is downward, patterned with metal lines, is placed on the top of another silicon wafer coated with dry polyimide. Hydrogen silsesquioxanes (HSQ), FOx-16, is diluted and trickled through the slit between the metal lines and the polyimide. Then the HSQ forms an ultrathin liquid layer on the dry polyimide and contacts with the top of the metal lines. After the liquid HSQ becomes dry, the air gap is formed. The dry polyimide has good adhesion to silicon substrate but not to the dry FOx-16, so we can separate the polyimide from the dry FOx-16 and get the air gap. The liquid property of HSQ and its high selective adsorption between the metal lines and the polyimide are utilized to form the air gap     

A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity $(I_{d})$ over the dark current $(I_{rm dark})$ is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the $V_{rm ds}$ and $V_{rm gs}$ voltages and of light intensities.      

10G EPON技术及应用方案研究

主要从10G EPON的技术标准出发,介绍了10G EPON不同于EPON的三大关键特性:高带宽、大分光比和长距离传输、向下兼容,既提高接入网的覆盖范围,增加单PON下的用户数,又能满足高速发展的用户宽带业务需求.正因为有此三大特性,EPON向10G EPON的平滑升级成为可能.在10G EPON的引进及现网升级改造的...     

10G EPON技术的研究与应用

分析了IEEE 802.3av工作组规定的10G EPON分层模型相对于1G EPON的改进,比较分析了10G EPON的技术优势,进而研究了现有1G EPON向10G EPON系统升级的过程和可能存在的技术瓶颈,提出了三种可分别运用在家庭、企业和移动基站中且支持高带宽网络服务的10G EPON组网模型,为将来10G EPON接入网系统的发展提供了参考.     

A leakage current model for sub-micron lightly-doped drain-offset polysilicon TFTs

Lightly-doped drain-offset polysilicon thin film transistors (LDO-TFTs) are very attractive as low leakage load elements in CMOS Static Random Access Memory (SRAM) cells. LDO-TFTs with different offset lengths and doses were fabricated and characterized. A model based on the Poole-Frenkel effect and thermionic field emission was developed to account for the leakage mechanism. The model was then applied to determine the sensitivity of the leakage current to process variations. It was found that the two most important factors influencing the leakage current are the net dose in the offset region and the distance between the channel/drain junction and the sidewall oxide.     

Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFETs with a lateral linear doping channel

A novel lateral nonuniform doping technique, which is compatible with conventional ion implantation technology, is reported. GaAs MESFETs with a linear lateral doping channel have been fabricated and improvements in performance have been demonstrated.<>     

A new numerical method for extraction of overlap capacitance ina-Si TFTs

We present numerically extracted quasi-static parasitic coupling capacitance associated with geometric overlapping in hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) in large-area a-Si imaging systems. The capacitance is extracted using a newly developed computational technique based on exponential expansion of the Green's function. Values of the computed capacitance are compared with those obtained with the parallel-plate approximation. A large discrepancy in values is found when the overlap length is small, due to the dominance of the fringing field in such geometries. Furthermore, the capacitance is found to increase with increasing permittivity of the substrate