All-binary AlAs—GaAs laser diode

Thin layers of AlAs and GaAs, grown by molecular beam epitaxy (MBE), are used to simulate the properties of AlxGa1-xAs. These AlAs-GaAs superlattices (SL's) are used as cladding layers (instead of AlxGa1-xAs) in heterostructure lasers capable of room-temperature operation. It is thus possible to obtain laser diodes which are composed only of the binary compounds GaAs and AlAs. The all-binary lasers are compared to conventional AlxGa1-xAs-GaAs double-heterostructure (DH) lasers grown and fabricated under similar conditions.     

Triggering GaAs lock-on switches with laser diode arrays

Progress toward the triggering of high-power photoconductive semiconductor switches (PCSSs) with laser diode arrays, is reported. An 850-W optical pulse from a laser diode array was used to trigger a 1.5-cm-long switch that delivered 8.5 MW to a 38.3-Ω load. Using 166-W arrays, it was possible to trigger a 2.5-mm-long switch delivering 1.2 MW with 600-ps rise-times at pulse repetition frequencies of 1 kHz. These 2.5-mm-long switches survived 10⁵ pulses at 1.0 MW levels. In single-pulse operation, up to 600 A was switched with laser diode arrays. The goal is to switch up to 5 kA in a single-shot mode and up to 100 MW repetitively at up to 10 kHz. At electric fields below 3 kV/cm GaAs switches are activated by creation of one electron-hole pair per photon. This linear mode demands high laser power and, after the light pulse, the carriers recombine in nanoseconds. At higher electric fields GaAs acts as a light-activated Zener diode. The laser light generates carriers as before, but the field induces gain such that the amount of light required to trigger the switch is reduced by a factor of up to 500. The gain continues until the field across the sample drops to a material-dependent lock-on field. The gain in the switch allows for the use of laser diodes     

半导体激光二极管触发GaAs光导开关

半导体激光二极管触发下砷化镓（GaAs）光导开关工作于雪崩模式,为此设计了异面体结构的GaAs 光导开关以提高开关场强.设计的开关芯片厚度为2 mm,电极间隙为3 mm,利用半导体激光二极管对开关进行触发实验.当开关充电电压超过8 kV 后,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关开始雪崩工作模式.随着开关电场不断增加,开关输出电压幅值也线性增加,但开关输出波形没有改变.对开关抖动进行测试,其测试结果显示开关偏压对抖动影响很大,随着开关偏压增加,开关抖动减小,当开关偏压升至15 kV 时,开关获得最小抖动约500 ps.     

GaAlAs／GaAs量子阱LD泵浦Nd：YAG激光器

利用分子束外延技术生长出了ＧａＡｌＡｓ／ＧａＡｓ折射率渐变分别限制单量阱材料。用该材料作出的激光二极管作泵浦源对Ｎｄ：ＹＡＧ激光器进行端面泵浦实验，在工作电流为３．３Ａ时，ＬＤ输出功率为２．７Ｗ，得到Ｎｄ：ＹＡＧ激光器的输出功率达７００ｍＷ，光－光转换效率达２０％。     

Surface-emitting GaAs light-emitting diode/laser diode withmodified coaxial transverse junction (CTJ) structure

A novel surface-emitting light-emitting diode (LED)/laser diode (LD) with a coaxial transverse junction (CTJ) structure is demonstrated by modified structures of the well and hole types with improved thermal properties. A narrow emission pattern for the LED was realised due to the CTJ structure and preliminary results for laser operation were also obtained at low temperatures     

Inner-stripe AlGaAs/GaAs laser diode by single-step molecular beam epitaxy

A novel fabrication technique for a real refractive-index-guide inner-stripe laser by a single-step crystal growth is reported. The injected current is confined in the p-type silicon-doped GaAs region on the V-shaped groove with (111)A slopes by the crystal-orientation-dependent amphoteric nature of the silicon impurity in GaAs.     

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.     

GaAs半导体表面的S-N混合等离子体钝化及在激光器工艺上的应用

利用射频(RF)等离子方法,对GaAs半导体表面进行 了S-N混合等离子体钝化实验,并对工作压强、RF 功率进行了优化。光致发光(PL)测试结果表明,经过S-N混合等离子体钝化的GaAs样品PL 强度提高135%。将本文 钝化方法应用到980nm波长InGaAs应变量子阱(QW)激光器的制备工艺 ,器件的COD阈值功率明显增加。     

A field-effect GaAs laser diode with controlled carrierdistribution in central and satellite valleys

The transient behavior of a field-effect GaAs laser diode is modeled under a controlled carrier distribution in the central (Γ) and satellite (S) valleys. The carrier distribution control is achieved by modulating the applied electric field which heats carriers to energies higher than 0.38 eV for Γ→S scatterings. The numerical analysis of the rate equations shows that picosecond optical pulses can be produced     

Micromirror device controlled tunable diode laser diode laser

An electronically controlled external cavity laser diode for fast wavelength tuning and multiple-colour lasing is presented. The spectral-tuning is accomplished by a digital micromirror device. Tuning of 47.4 nm with a tuning speed of 0.85 nm/ms was achieved. Simultaneous emission of up to 9 laser lines is demonstrated     

Germanium P-N-P-N switches

Transistors having bases from 90 to 220 mils wide, with the base contact placed near the collector, have shown marked current gain increases with current, peaking at values from 0.1 to 0.3. This effect is due to drift of the injected carriers in the base electric field set up by the emitter current. If the base contact is placed near the emitter, only very small values of α are obtained. Germanium p-n-p-n diode and triode switches were made to operate primarily on the base field mechanism. They had one very wide (p-type) and one very narrow (n-type) base. The base contact for the switching triode may be placed either on the wide base but near the narrow base, or on the narrow base. In the latter case, much less current is required to switch the device from the high resistance to the high conductance region. When used as n transistor, the dc grounded base current gain of the p-n-p-n triode passes through unity at the turn-off current. A p-n-p-p+ structure, as a component part of the p-n-p-n triode with base contact on the wide base region, is shown to act as a switching diode in much the same way as the germanium p-n-pm unit. When the base contact is made to a narrow base bar-type transistor structure, overlap onto emitter and collector regions often results in a current gain that increases with current. This effect may also be utilized in making p-n-p-n switches.     

Room-temperature pulsed operation of AlGaAs/GaAs vertical-cavitysurface-emitting laser diode on Si substrate

Room-temperature pulsed AlGaAs/GaAs vertical-cavity surface-emitting laser diode (VCSELD) has been grown on Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on Si substrate consists of a single quantum well active layer and a 20-pair of AlAs/GaAs distributed Bragg reflector (DBR). The measured reflectivity of the 20-pair of AlAs/GaAs DBR was 93% at the wavelength of 860 nm. The VCSELD on Si substrate exhibited a threshold current of 79 mA and a threshold current density of 4.9 kA/cm² under pulsed condition at room temperature     

高功率808 nm AlGaAs/GaAs基半导体激光器巴条的热耦合特征

利用红外热成像技术和有限元方法在实验和理论上研究了高功率808 nm半导体激光器巴条热耦合特征,给出了稳态和瞬态热分析,呈现了详细的激光器巴条热耦合轮廓.发现器件稳态温升随工作电流呈对数增加,热耦合也随之增加且主要发生在芯片级.另外,作者利用热阻并联模型解释了芯片级热时间常数随工作电流减小的现象.     

Three-terminal P-N-P-N transistor switches

An investigation of the electrical properties of four-region silicon structures, with electrical contact made to both outer regions and to one of the inner base regions is described briefly. A satisfactory analytical understanding of the device has been achieved, but for simplicity the experimental results presented are discussed in nonmathematical and purely physical terms. The fuller theoretical discussion is being prepared for submission to the PROCEEDINGS OF THE IRE. In many respects, the behavior of this three-terminal device is found to be similar to the conventional thyratron.     

Ultrafast GaAs microwave PIN diode

This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n+ substrate by MOCVD of a 2 ?m, 1015 cm?3 unintentionally doped n? layer followed by a 0.3 ?m, 4×1019 cm?3 Zn doped p+ layer. The isolation and insertion loss of a single shunt-mounted device are typically ?27 dB and 0.7 dB, respectively. The switching speed of the device was measured to be less than 1 ns.     

Nb/GaAs super-Schottky diode

A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a rugged device having very reliable characteristics with detector current sensitivity S ≃ 1500 V^-1and estimated NEP ≃ 1.2 × 10^-15W/√HZ at 4.2 K under the optimum bias conditions.     

半导体激光器特性测试中温度控制技术的研究

温度特性是影响半导体激光器(LD)特性测试准确性的重要因素,对LD温度控制技术的研究有着重要的意义.在分析了LD的温度特性的基础上,提出了一种高稳定温度控制的设计方案,并从几个方面讨论了保证LD高稳定温度控制和保证温度信号检测、传输精度的方法.实验结果表明,在10℃～40℃范围内温度稳定度为±0.01℃,在25℃时稳定度达到士0.005℃,从而为LD的准确测试提供了有效的保证.此系统稍加改动即能广泛应用于各类LD的控温系统.     

High-performance millimetrewave GaAs Schottky-barrier flip-chip diode

Theoretical and experimental results reveal a novel flip-chip structure which allows attainment of both parasitic and internal device element values comparable with, or even superior to, the ultrasensitive whisker-contact Schottky-diode structure. Preliminary results with neither device nor choke structure matched to mixer block show LDSB<10 dB, Tmix approximately 2000 K (91 GHz, 300 K).     

A GaAs distributed IMPATT diode amplifier

Stable microwave amplification has been obtained in GaAs distributed IMPATT (DIMPATT) diodes by the use of shorter than resonant length devices and appropriate input/output port terminations. CW output powers of 2 W were achieved at 9.5 GHz with 10-dB gain.