Brush electrodeposited CdSexTe1−x thin films and their properties

CdSe_xTe_1−x thin films were brush plated on titanium and conducting glass substrates from the precursors at different substrate temperatures in the range of 30-80 °C. X-ray diffraction studies indicated the films to possess hexagonal structure irrespective of composition. The strain and dislocation density decrease with increase of substrate temperature. The crystallite size increased from 30 to 100 nm as the substrate temperature increased. The resistivity of the films decreased with increase of substrate temperature. The carrier density and mobility increased with substrate temperature. Optical band gap of the films varied in the range of 1.45-1.72 eV. Higher photosensitivity was obtained compared to earlier reports.     

Photoelectrochemical properties of CdSxSe1−x films

CdS_xSe_1−x films of different composition (0 < x < 1) were deposited by pulse plating technique at different duty cycles in the range of 10-50%. The films were polycrystalline and exhibited hexagonal structure. The band gap of the films varies from 1.68 to 2.39 eV as the concentration of CdS increases. Energy Dispersive analysis of X-rays (EDAX) measurements indicate that the composition of the films are nearly the same as that of the precursors considered for the deposition. Atomic force microscopy studies indicated that the grain size increased from 20 to 200 nm as the concentration of CdSe increased. Photoelectrochemical (PEC) cell studies indicated that the films of composition CdS_0.9Se_0.1 exhibited maximum photoactivity. Mott-Schottky studies indicated that the films exhibit n-type behaviour. Spectral response measurements indicated that the photocurrent maxima occurred at the wavelength value corresponding to the band gap of the films.     

Pulse plated CdSxTe1−x films and their properties

CdS_xTe_1−x films were deposited on titanium and conducting glass substrates at room temperature using 0.25 M cadmium sulphate, the concentration of sodium thiosulphate and TeO₂ dissolved in sodium hydroxide was varied in the range of 0.01-0.05 M. The as deposited films exhibited hexagonal structure irrespective of the composition. The FWHM maximum of the x-ray diffraction peaks were found to decrease with increase of duty cycle. The optical energy gap values are in the range of 1.54-2.32 eV for films of different composition, it is observed that the band gap shifts towards CdS side as the concentration of CdS in the films increase. XPS studies indicated the formation of CdSTe solid solution. The grain size increases from 11.54 to 99.40 nm as the value of x increases from 0.2 to 0.8. The surface roughness is found to increase from 0.22 to 2.50 nm as the value of ‘x’ increases from 0.2 to 0.8. The resistivity is found to vary from 53 to 8 ohm cm as the ‘x’ value decreases from 1 to 0.     

Effect of sodium addition on Cu-deficient CuIn1−xGaxS2 thin film solar cells

Chalcopyrites are important contenders among solar-cell materials due to direct band gap and very high-absorption coefficients. Copper-indium-gallium disulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of 1.5 eV for terrestrial as well as space applications. At FSEC PV Materials Laboratory, record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 thin film prepared by sulfurization. There are reports of influence of sodium on copper-indium-gallium selenide (CIGS) as well as copper-indium disulfide (CIS2) solar cells. However, this is the first of its kind approach to study the effect of sodium on CIGS2 solar cells and resulting in encouraging efficiencies. Copper-deficient CIGS2 thin films were prepared with and without the addition of sodium fluoride (NaF). Effects of addition of NaF on the microstructure and device electrical properties are presented in this work.     

Impact of Cu-rich growth on the CuIn1−xGaxSe2 surface morphology and related solar cells behaviour

The amount of copper excess provided during the Cu(In,Ga)Se₂ (CIGSe) 3-stage co-evaporation process is among the most operator subjective. In the present paper the influence of this parameter on the properties of the CIGSe films as well as on the behaviour of the related solar cells is investigated. It is observed that both the In/Ga lateral intermixing and the grain size are enhanced when the excess of copper is increased. Contrary to what could be expected, these changes only weakly affect the performance of the solar cells. Increasing the copper excess also yields a rougher CIGSe morphology. This latter evolution is observed to be the most important factor influencing the device behaviour. Through accurate analysis of quantum efficiency, it is concluded that, in the case of the standard cell structure, there exists a threshold in copper excess, beyond which the cell performance is significantly reduced.     

p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3

We report the preparation of copper antimony sulfide (CuSbS₂) thin films by heating Sb₂S₃/Cu multilayer in vacuum. Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on well cleaned glass substrates. A copper thin film was deposited on Sb₂S₃ film by thermal evaporation and Sb₂S₃/Cu layers were subjected to annealing at different conditions. Structure, morphology, optical and electrical properties of the thin films formed by varying Cu layer thickness and heating conditions were analyzed using different characterization techniques. XRD analysis showed that the thin films formed at 300 and 380 °C consist of CuSbS₂ with chalcostibite structure. These thin films showed p-type conductivity and the conductivity value increased with increase in copper content. The optical band gap of CuSbS₂ was evaluated as nearly 1.5 eV.     

Optical properties of polycrystalline AgxGa2−xSe2 (0.4x1.6) thin films

Polycrystalline thin films of Ag_xGa_2−xSe₂ (0.4x1.6) were prepared onto cleaned glass substrates by the stacked elemental layer (SEL) deposition technique. All the films were annealed in situ at 300 °C for 15 min. The compositions of the films were measured by energy-dispersive analysis of X-ray (EDAX) method. The structural and optical properties of the films were ascertained by X-ray diffraction (XRD) and UV–VIS–NIR spectrophotometry (photon wavelength ranging from 300 to 2500 nm), respectively. The influence of the composition on the optical properties of the material has been investigated. Microstructural perfection is quite evident from the abrupt descent around specific energy of photons in the transmittance spectra. Stoichiometric or slightly silver-deficient films show optimum electron transition energy and minimum sub-band gap absorption.     

Progress in electrodeposited absorber layer for CuIn(1−x)GaxSe2 (CIGS) solar cells

Thin film solar cells with chalcopyrite CuInSe₂/Cu(InGa)Se₂ (CIS/CIGS) absorber layers have attracted significant research interest as an important light-to-electricity converter with widespread commercialization prospects. When compared to the ternary CIS, the quaternary CIGS has more desirable optical band gap and has been found to be the most efficient among all the CIS-based derivatives. Amid various fabrication methods available for the absorber layer, electrodeposition may be the most effective alternative to the expensive vacuum based techniques. This paper reviewed the developments in the area of electrodeposition for the fabrication of the CIGS absorber layer. The difficulties in incorporating the optimum amount of Ga in the film and the likely mechanism behind the deposition were highlighted. The role of deposition parameters was discussed along with the phase and microstructure variation of an as-electrodeposited CIGS layer from a typical acid bath. Related novel strategies such as individual In, Ga and their binary alloy deposition for applications in CIGS solar cells were briefed.     

The influence of the vacuum annealing process on electrodeposited CuInSe2 films

CuInSe₂ films were electrodeposited on mechanical polished Mo substrates. The applied potential was adjusted to get a stoichiometric composition. The as-deposited films were annealed in a high vacuum system for a short time. The films have been characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, Auger electron spectroscopy. The results indicate that the crystallization of the films was greatly improved by the short time vacuum annealing process without significant change in composition. The capacitance–voltage measurement shows characteristic p-type behaviors. This annealing process after electrodeposition was proved to be a useful method to prepare the polycrystalline CuInSe₂ films for solar cell application.     

Determination of optical properties of amorphous Ta2O5 films deposited by spin- and dip-coating methods

The optical properties of amorphous Ta₂O₅ films prepared by the sol-gel dip- and spin-coating deposition technique and dried at 60°C have been investigated. Refractive index, extinction coefficient and optical energy gap have been calculated from optical transmission measurements using the Swanepoel method. The films of similar thickness deposited by the two methods were compared. It is shown that the optical properties are dependent on the deposition methods. The energy band gap of the Ta₂O₅ films is 3.75 ± 0.12 eV and is independent of the coating methods.     

MS2 (M = W, Mo) photosensitive thin films for solar cells

Photosensitive textured WS₂ and MoS₂ films can be obtained by the techniques of reactive sputtering and solid state reaction, as long as the substrates used are each coated with a 10–20 nm Ni layer. When MS₂ (M = W, Mo) layers are deposited onto these substrates and then annealed for half an hour at 1073k in an argon atmosphere, textured films crystallized in the 2H-MS₂ structure are obtained, with their c crystallite axes perpendicular to the plane of the substrate. The films are nearly stoichiometric. The crystallinity enhancement of the films can be attributed to an improvement in the crystallization process related to liquid NiS phases present at the grain boundaries during annealing. Residual phases (Ni_xS_y; Ni;…) are distributed at the grain boundaries and do not strongly disturb the properties of the WS₂ and MoS₂ films. The optical absorption spectra are similar to those of single crystals, and the high photosensitivity of the films is attributed to a grain size enhancement by the NiS phase.     

Effect of Mg content on structural, electrical and optical properties of Zn1−xMgxO nanocomposite thin films

We report on the growth of Zn_1−xMg_xO (ZMO) thin films on quartz substrate using pulsed laser deposition (PLD) technique. The influence of varying Mg composition on structural, electrical and optical properties of ZMO films has been systematically investigated. Increase in Mg content (in the range 0.0?x?1.0), reflects the structural phase transition from wurtzite via mixed phase region to cubic one. X-ray diffraction (XRD) studies indicate the hexagonal wurtzite phase at Mg composition ranging from 0% to 30%; mixture of wurtzite and cubic phases for 40% and single cubic phase at Mg content greater than 50%. The variation of the cation-anion bond length to Mg content shows that the lattice constant of the hexagonal ZMO decreases with corresponding increase in Mg content, which result in the structure gradually deviating from the wurtzite structure. The optical measurements reveal a blue shift in absorption edge and increase in transmittance from 75% to 96% with increase in Mg content. Tuning of the band gap has been obtained from 3.41 to 6.58 eV with corresponding increase in Mg content from x=0.0 to 1.0, which demonstrates that the films are useful for window layer of solar cells that improve the overall efficiency by decreasing the absorption loss.     

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

Polycrystalline thin films of CuInSe₂ and Cu(In,Ga)Se₂ (CIGS) were grown on both polished Mo substrates and Mo-coated glass substrates by one-step electrodeposition. All the as-deposited films have been annealed in vacuum at 450°C for a short time to improve the crystalline properties. The films have been characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The results indicate that the crystallization of the films was greatly improved after annealing. Further more, a CIGS film with 23 at% Ga was obtained.     

Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.     

Optical characterization of In2S3 solar cell buffer layers grown by chemical bath and physical vapor deposition

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In₂S₃ buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In₂S₃ thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.     

Preparation of Culn(SxSe1−x)2 thin films by sulfurization and selenization

A CuIn(S_xSe_1−x)₂ alloy thin-film was prepared by selenization of CuInS₂: its composition ratio x can be controlled by the number of selenization cycles implemented. Crystallinity of the films was improved by annealing in vacuum. The resistivity of the film was about 1 Ω cm and increased by one to two orders of magnitude after KCN treatment. An 8.1 % efficiency solar cell was obtained by using this annealed alloy thin-film.     

Electrodeposited and selenized (CuInSe2) (CIS) thin films for photovoltaic applications

In the present communication, the authors report results on the characterization of electrodeposited and selenized (CuInSe₂) (CIS) thin films. The selenization process was carried out using a technique called chemical vapor transport by gas (CVTG). The precursors as well as selenized films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron microprobe analysis (EPMA). The film stoichiometry improved after selenization at 550°C. The films were formed with a mixed composition of the binary as well as the ternary phases.     

Optical and electrical properties of flash-evaporated amorphous CuInSe2 films

Amorphous films of CuInSe₂ were deposited on glass substrate by flash evaporation of source materials. The films were found to be p-type semiconductors. The direct optical band-gap energy was obtained to be 1.21–1.41 eV. The film DC conductivity ranged from 1.2–5.7 S cm⁻¹ at 285 K for different film thickness with corresponding activation energy of 55.5–301 meV. From temperature dependence of conductivity, the carrier transport was interpreted to be due to band conduction above 270 K.     

Structural, morphological, optical and electrochromic properties of Ti-doped MoO3 thin films

Thin films of molybdenum trioxide (MoO₃) doped with titanium were prepared using a spray pyrolysis technique. Increasing Ti doping concentration was found to hamper the polycrystalline nature of undoped orthorhombic MoO₃ and undergo transformation from polycrystalline to amorphous structure with decrease in grain size. This was also reflected in scanning electron microscopy wherein transformation of thread-like reticulated morphology to spongy structures could be observed at higher Ti concentration (9 at% Ti). With increasing Ti concentration, the charge capacity, coloration efficiency, reversibility and electrochemical stability increased. This improvement could be ascribed to the amorphous spongy morphology of the doped samples that offers easy pathway for intercalation and deintercalation of the ions. Hence, 9 at% Ti-doped MoO₃ can act as an adequate host for electrochromic devices.