聚乙酰基对苯撑二甲基的合成及其热降解性能的研究

通过化学气相沉积(CVD)聚合法合成了聚乙酰基对苯撑二甲基,采用红外光谱(FTIR)证实了二聚体和气相沉积聚合物的化学结构,并用热重分析(TGA)法研究了聚合物膜的热降解性能,结果表明聚乙酰基对苯撑二甲基的热降解基本上经历乙酰基降解、连接苯环的亚甲基和苯环的降解3个阶段.尽管聚乙酰基对苯撑二甲基的初始热降解温度低于聚对苯撑二甲基,但仍有普通热塑性高分子材料的热稳定性.聚乙酰基对苯撑二甲基是一类优良的、具有一定极性从而具有较好底物附着力的敷形涂层材料.     

化学气相沉积聚合制备聚乙酰基对苯撑二甲基及其性能的研究

通过化学气相沉积(CVD)聚合法合成了聚乙酰基对苯撑二甲基,采用红外光谱(FTIR)证实了二聚体和气相沉积聚合物的化学结构.与聚对苯撑二甲基聚合物相比引入乙酰基后聚合物的溶解性、介电常数和损耗因子均有所提高.将红外光谱与热重(TG)分析相结合研究了聚合物膜的热降解性能,表明聚乙酰基对苯撑二甲基的热降解基本上经历3个阶段,首先是乙酰基降解,接着是连接苯环的亚甲基,最后是苯环的降解.尽管聚乙酰基对苯撑二甲基的初始热降解温度低于聚对苯撑二甲基,但仍有普通热塑性高分子材料的热稳定性.聚乙酰基对苯撑二甲基是一类优良的、具有一定极性从而具有较好底物附着力的敷形涂层材料.     

等离子体聚合掺有苯环的超薄有机硅膜

用化学气相沉积方法制备了超薄有机硅膜.研究了等离子体聚合工艺过程中,工艺条件对膜的特性和沉积速率的影响.结果表明沉积掺有苯环的有机硅膜增强了膜的强度和耐腐蚀性能.最近研制的膜已成功地用于一些工程中.     

CVD聚合制备聚(羟甲基对亚苯基二亚甲基)及其性能的研究

用化学气相沉积(CVD)聚合法制备了聚(羟甲基对亚苯基二亚甲基)(PPX-HM)膜,采用FTIR和元素分析的方法证实了其化学结构.对膜溶解性和抗化学氧化性能的研究表明PPX-HM膜具有优异的耐溶剂性和抗化学氧化性能.对PPX-HM膜热性能的研究表明羟甲基的引入使得膜的玻璃化转变温度降低,室温柔性增强,动态力学阻尼性能增大,热降解起始温度比聚对亚苯基二亚甲基(PPX)低,但主链降解温度比PPX反而高出约50℃.此外,羟甲基的引入使得膜的亲水性能大幅度提高,水汽透过性能也有所提高.     

等离子体聚合掺有苯环的超薄有机硅膜

用化学气相沉积方法制备了超薄有机硅膜，研究了等离子体聚合工艺过程中，工艺条件对膜的特性和沉积速率的影响，结果表明：沉积掺有苯环 有机硅膜增强了强度和耐腐蚀性能，最近研制的膜已成功地用于一些工程中。     

射频等离子体化学气相沉积(RF-PECVD)制备Si-O-N特种阻隔包装材料的研究

采用13.56MHz射频等离子体聚合装置,以六甲基二硅氧烷(HMDSO)和四甲基硅氧烷(TMDSO)为单体、氧气以及氮气为反应气体、氩气为电离气体,在载玻片、单晶硅片、PET等基材上沉积硅氧氮薄膜.在薄膜的制备工艺研究中,通过改变放电工作压强、放电功率、沉积时间和氧气、氮气、氩气和单体的比例等,研究所制备硅氧氮薄膜的性能.通过傅立叶红外光谱仪(FTIR)表征分析沉积膜的化学组成;采用透湿、透氧测试仪测试薄膜的阻隔性能,探讨工艺参数的变化对薄膜表面的成分和阻隔性能影响以及氮的加入对薄膜柔韧性的影响.     

沉积扩散法制备高硅钢

高硅钢(6.5%(质量分数)Si)是一种具有高磁导率、低矫顽力和低铁损等优异软磁性能的合金.但高硅钢的室温脆性和低的热加工性能严重影响了其在工业领域的应用.综述了化学气相沉积、等离子体化学气相沉积、电泳沉积、熔盐电沉积、电子束物理气相沉积及激光熔覆等6种沉积扩散法制备高硅钢的工艺和参数,从工艺路线、反应机理分析和性能的改善等几方面,概述了各种方法的研究现状和主要的优缺点,并简要论述了其发展前景,指出了今后的主要研究方向.     

碳纳米管MPCVD和TCVD制备的比较分析

碳纳米管主要的制备方法是化学气相沉积法(CVD).采用CVD法中最主要的微波等离子体化学气相沉积法(MPCVD)和热化学气相沉积法(TCVD)制备出定向的碳纳米管.并从制备工艺,场发射性能和SEM结构等方面对两种方法进行比较分析,得出对碳纳米管制备有一定指引和借鉴意义的结论.     

(TiZr)N硬质膜的沉积工艺研究

本文主要研究(TiZr)N硬质膜的沉积工艺波动范围及影响。考察了阴极靶电流、N_2气流量等工艺参数对膜层组织和性能的影响。研究表明,沉积工艺参数的波动变化不会对膜层组织、力学性能产生明显影响。(TiZr)N硬质膜的沉积工艺参数可以有较大的波动范围,沉积工艺窗口具有良好的可应用性。     

聚合工艺对聚噻吩固体片式铝电解电容器的影响

采用导电高分子材料聚(3,4-乙撑二氧噻吩)(PEDT)制备固体片式铝电解电容器,主要探索了化学聚合工艺对聚噻吩固体片式铝电解电容器性能的影响.结果表明,低的聚合溶液浓度可以提高所制备电容器的容量、降低损耗和等效串联电阻(ESR),但需要增加聚合次数以获得所需厚度的PEDT膜;化学聚合过程中烘干温度为40℃并进行适当次数的清洗,其所制备的产品容量较高,损耗较小,ESR低;增加聚噻吩的化学聚合次数可以提高电容器的容量引出水平,并降低损耗和ESR.     

化学气相沉积聚合制备聚溴代对亚苯基二亚甲基及其性能的研究

用化学气相沉积(CVD)聚合法制备了聚溴代对亚苯基二亚甲基(PPX-B r)膜,采用FT-IR和元素分析的方法证实了其化学结构。对膜溶解性和抗化学氧化性能的研究表明,聚溴代对亚苯基二亚甲基膜具有优异的耐溶剂性和抗化学氧化性能。对其热性能的研究表明,溴的引入使得膜的玻璃化转变温度降低,室温柔性增强,热降解性能与聚氯代对亚苯基二亚甲基(PPX-C)相似。与PPX膜相比,溴的引入对膜的亲水性能影响不大,而水汽渗透率明显降低,具有更好的防潮性。     

25th Anniversary Article: CVD Polymers: A New Paradigm for Surface Modifi cation and Device Fabrication

Well‐adhered, conformal, thin (<100 nm) coatings can easily be obtained by chemical vapor deposition (CVD) for a variety of technological applications. Room temperature modification with functional polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three‐dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real‐time monitoring, and thickness control. Initiated‐CVD shows successful results in terms of rationally designed micro‐ and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative‐CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers.     

CVDP制备的聚对亚苯基二亚甲基的表面磺化改性

采用化学气相沉积聚合(CVDP)的方法制备了聚对亚苯基二亚甲基(PPX)涂层,再通过发烟硫酸的化学表面改性成功地在PPX的芳香环上引入磺酸基团,可作为进一步功能化的反应基团.与PPX相比,表面磺化改性PPX(PPX-SO3Na)的接触角变小,亲水性增加,更有利于作为生物医用材料.采用原子力显微镜(AFM)测定PPX和磺化PPX的表面形貌,结果表明,表面磺化改性后的PPX变得更光滑,更有利于作抗凝血涂层材料.Fenton试剂测得PPX-SO3Na的抗化学氧化时间略低于PPX,但由于膜的主链主要是由苯环连接而成的,相对其它常用聚合物来说依然具有较好的抗化学氧化性能.     

纳米金属包覆材料研究进展

纳米金属材料的表面包覆和修饰是纳米材料学的一个新型研究方向。其制备方法主要有物理吸附法、表面沉积法、电弧放电法、等离子体聚合法、激光化学气相沉积法、乳液聚合法等。包覆结构主要用透射电镜直接观测和成分对比分析等间接手段表征。由于其独特的性质,主要应用在陶瓷增韧、双金属粉末和非线性光学性质等方面。     

化学气相沉积技术在锂离子电池电极材料中的应用

化学气相沉积(CVD)是近年来发展起来的制备各种无机复合材料的一种新技术.简要介绍了CVD技术的原理和特点,分析了目前研究的各种锂离子电池正负极材料存在的问题,重点介绍了CVD技术在解决这些问题上的应用进展.     

Chemical Vapor Deposition of Conformal,Functional, and Responsive Polymer Films

Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor‐phase monomers to form chemically well‐defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet‐chemical chain‐ and step‐growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high‐resolution (60 nm) patterning, even on flexible substrates. Utilizing only low‐energy input to drive selective chemistry, modest vacuum, and room‐temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large‐area and roll‐to‐roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed.     

金刚石薄膜的性质、制备及应用

金刚石有着优异的物理化学性质，化学气相沉积金刚石薄膜的研究受到研究人员和工业界的广泛关注。通过评述金刚石薄膜的性质、制备方法及应用等方面的研究成果，着重阐述化学气相沉积金刚石薄膜技术的基本原理，分析了各种沉积技术的优、缺点。结合对金刚石薄膜应用的讨论，分析了金刚石薄膜在工业应用中存在的问题和制备技术的发展方向。分析结果表明：MWCVD法是高速率、高质量、大面积沉积金刚石薄膜的首选方法；而提高金刚石的生长速度、降低生产成本等是进一步开发刚石薄膜工业化应用所需解决的主要问题。     

CVD Polymers for Devices and Device Fabrication

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high‐purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro‐ and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization.     

A Route Towards Sustainability Through Engineered Polymeric Interfaces

Chemical vapor deposition (CVD) of polymer films represent the marriage of two of the most important technological innovations of the modern age. CVD as a mature technology for growing inorganic thin films is already a workhorse technology of the microfabrication industry and easily scalable from bench to plant. The low cost, mechanical flexibility, and varied functionality offered by polymer thin films make them attractive for both macro and micro scale applications. This review article focuses on two energy and resource efficient CVD polymerization methods, initiated Chemical Vapor Deposition (iCVD) and oxidative Chemical Vapor Deposition (oCVD). These solvent‐free, substrate independent techniques engineer multi‐scale, multi‐functional and conformal polymer thin film surfaces and interfaces for applications that can address the main sustainability challenges faced by the world today.