Polarization and piezoelectric properties of grain-oriented ferroelectric Bi<Subscript>5</Subscript>FeTi<Subscript>3</Subscript>O<Subscript>15</Subscript> ceramics prepared by magnetic-field-assisted electrophoretic deposition method

Magnetic-field-assisted electrophoretic deposition method has been employed for synthesizing a(b)-axis-oriented Bi₅FeTi₃O₁₅ ceramics, and the effects of grain orientation and microstructure on the polarization and piezoelectric properties have been investigated. Grain-oriented Bi₅FeTi₃O₁₅ ceramics with a high relative sintered density of 98% is shown to exhibit enhanced polarization and piezoelectric properties with a remanent polarization (P _r) of 19 μC/cm² and a piezoelectric strain constant (d ₃₃) of 23 pm/V, which are much superior to those of randomly-oriented ceramics (P _r of 7 μC/cm² and d ₃₃ of 5 pm/V).     

Raman and infrared spectroscopy of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> - BaTiO<Subscript>3</Subscript> ceramics

Lead-free Na_0.5Bi_0.5TiO₃ -BaTiO₃ ceramics have been prepared in the whole range of concentrations and studied at room-temperature by means of X-ray, Raman scattering and infrared techniques. X-ray measurements revealed rhombohedral, rhombohedral-tetragonal boundaries and tetragonal modifacations depending on the contents of BaTiO₃. The distinct changes of the Raman and infrared spectra with increasing of BaTiO₃ content, which were correlated with X-ray results, were observed. The broad phonon spectra indicated the disorder in the A site of Na_0.5Bi_0.5TiO₃ -BaTiO₃ system.     

Normal-to-relaxor ferroelectric phase transition and electrical properties in Nb-modified 0.72BiFeO<Subscript>3</Subscript>-0.28BaTiO<Subscript>3</Subscript> ceramics

Preparation and electrical properties of sintered bodies consisting of monophase cubic spinel oxides, Cr_XMn_1.5Co_(1.0-X)Ni_0.5O₄ (0 ≦ X ≦ 0.42), were investigated. Specimens with compositions within X = 0.42 were prepared as starting materials. The element of Cr was used to exchange Co³⁺ in octahedral sites (B sites) with Cr³⁺ so that the hopping mechanism can be discussed. The sintered bodies with mono cubic spinel structure were confirmed to be prepared by heat-treatment for 48 h in air at 1000 °C to convert them into a cubic spinel structure after sintering at 1400 °C. The semiconductive characteristics of the sintered bodies were determined as p-type because the Seebeck coefficients were all positive. The electrical conduction of the sintered bodies was concluded to be controlled by the small polaron hopping mechanism. In the region 0.1 ≦ X ≦ 0.42, the lattice constant increases and electrical conduction (σ) decreases linearly with increasing Cr concentration. The decrease in σ and the increase in the lattice constant corresponded to the increase in Cr concentration by which the jumping distance of electrons between Mn³⁺ and Mn⁴⁺ is lengthened.     

Sintering Behavior and Interfacial Analysis of Ni/Cu Electrode with BaTiO<Subscript>3</Subscript> Particulates

The sintering behavior of Ni electrode alloyed with Cu and the interfacial structure between Ni/Cu to BaTiO₃ (BT) have been investigated. The quantitative properties, which include thermal shrinkage, thermal expansion, wetting behaviors of Ni/Cu alloys on BT sheet, and composition distribution were measured by several thermal analysis techniques (TGA/DTA/TMA) and microstructural techniques (SEM/TEM/ HRTEM) with energy-dispersive spectroscopy (EDS). The shrinkage of the Ni/Cu/ BaTiO₃ composite tested in 5%H₂/N₂ atmosphere showed strong influence by the addition of Cu, and retarded slightly due to the addition of the BT particulates. The Cu alloyed with Ni improves the continuity of the electrode and does not trigger mutual reaction between Ni and BT.     

Preparation and modification of high Curie point BaTiO<Subscript>3</Subscript>-based X9R ceramics

BaTiO₃ (BT) based X9R ceramics with high permittivity about 1700 were prepared by doping and pre-sintering technique. Pure Bi_0.5Na_0.5TiO₃ (BNT) dopant was synthesized by the conventional solid state reaction first. Using this new approach, high performance BTBNT (BT doped with BNT) materials, owning high Curie temperature (139 °C), flat ferroelectric transition region and large permittivity at room temperature, were obtained. The effects of several dopants on dielectric properties of BTBNT ceramics were measured by the LCR meter. The suppression effect for the peaks in the dielectric constant at Curie temperature of these dopants have been ranked as follows: BiNbO₄ > CaZrO₃ > Nb₂O₅ > BNT.     

Dielectric and Piezoelectric Properties of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-K<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-NaNbO<Subscript>3</Subscript>Lead-Free Ceramics

The ternary lead-free piezoelectric ceramics system of (1 – x) [0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃] – xNaNbO₃(x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) were synthesized by conventional solid state reaction method. The crystal structure, dielectric, piezoelectric properties and P-E hysteresis loops were investigated. The crystalline structure of all compositions is mono-perovskite phase ascertained by XRD, and the lattice constant was calculated from the XRD data. Temperature dependence of dielectric constant _r and dissipation factor tan measurement revealed that all compositions experienced two phase transitions: from ferroelectric to anti-ferroelectric and from anti-ferroelectric to paraelectric, and these two phase transitions have relaxor characteristics. Both transition temperatures T_d and T_m are lowered due to introduction of NaNbO₃. P-E hysteresis loops show that 0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃ ceramics has the maximum P_r and E_c corresponding to the maximum values of electromechanical coupling factor K_p and piezoelectric constant d_33. The piezoelectric constant d₃₃ and electromechanical coupling factor K_p decrease a little, while the dielectric constant ₃₃^T/₀ improves much more when the concentration of NaNbO₃ is 8 mol%.     

Lead-free (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)<Subscript>0.95</Subscript>(LiSb)<Subscript>0.05</Subscript>Nb<Subscript>0.95</Subscript>O<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> piezoceramics

Lead-free (1-x)(K_0.5Na_0.5)_0.95(LiSb)_0.05Nb_0.95O₃-xBaTiO₃ (abbreviated as (1-x)KNNLS-xBT) piezoceramics were synthesized by conventional solid state sintering and the effect of BaTiO₃ on the microstructure, dielectric and piezoelectric properties was investigated. It was found that both orthorhombic-tetragonal (T _O-T) and tetragonal-cubic (T _C) phase transition temperatures decreased obviously with increasing BaTiO₃ content. Although proper amount of BaTiO₃ facilitated the sintering of (1-x)KNNLS-xBT ceramics, the addition of BaTiO₃ affected the relaxor behavior slightly and it was not beneficial to improve piezoelectric strain coefficient d ₃₃, remnant polarization P _r and piezoelectric coupling constant k _p.     

Microstructural Analysis of X7R-Type BaTiO<Subscript>3</Subscript> Multilayer Ceramic Capacitors (MLCCs)

The microstructures of typical commercial X7R MLCCs were characterized by transmission electron microscopy (TEM), using tripod polished specimens and ion milled samples. Core-shell structures were clearly observed in the TEM specimens, and glass phases located at the grain boundaries and triple points were frequently observed. Their chemical composition was analyzed using energy dispersive X-ray spectrometry (EDS), which showed bismuth ions diffused into the shell regions, while the cores were pure BaTiO₃. X-ray diffraction (XRD) suggested that the predominant phase in the microstructure had pseudocubic global symmetry, while ferroelectric domains were observed in TEM bright field (BF) images. The internal electrodes in the devices were an alloy of Ag/Pd, and these regions were found to have twinned crystal structures. The stress states in the interfaces between the electrodes and the dielectric layers were revealed, and no silver migration in the flux at the electrode-dielectric interfaces was observed.     

Microwave Dielectric Characteristics of MgTiO<Subscript>3</Subscript>/CaTiO<Subscript>3</Subscript> Layered Ceramics

MgTiO₃/CaTiO₃ layered ceramics with differently stacking were fabricated and the microwave dielectric properties were evaluated with TE₀₁₁ mode. With increasing CaTiO₃ thickness fraction, the resonant frequency decreased and the dielectric constant increased with a near-linear relation for the bi-layer ceramics, while the values of the tri-layer MgTiO₃/CaTiO₃/MgTiO₃ ceramics with thickness ratio of 1:1:1 derived much from the curves of the bi-layer ceramics. The finite element method was used to give an explanation for the differences between the bi-layer and tri-layer ceramics.     

Characterization of Barium Titanate: BaTiO<Subscript>3</Subscript> (BT) Ceramics Prepared from Sol-Gel Derived BT Powders

Sol-gel synthesis was attempted at room temperature by adding drop wise a clear solution (made by reacting BaCO₃ with glacial acetic acid) to an equi-molar solution of titanium tetrabutoxide in isopropanol (IPA) and acetic acid. The gelation occurred within 30 minutes. The as-dried gel was calcined at 750^∘C/6 h in air to obtain carbon free BaTiO₃ powders. The resulting BT powders were further pressed into pellets and sintered at 1280^∘C/4 h in air to get dense ceramics (density ∼ 94%). XRD and SEM techniques were used for phase and microstructure analysis respectively. The room temperature relative permittivity (ε) of 1280 increased to 7200 (at Curie temperature of 127^∘C) at 1 kHz frequency. The dissipation factor (tanδ) ∼1.6% was observed in these samples. Also, the ferroelectric properties such as spontaneous polarization (Ps ∼ 13 μC/cm²), coercive field (E_c∼4.0 kV/cm) and dielectric strength (∼34 kV/cm) are estimated for these samples. These performance parameters are compared with the available standard data from the literature.     

Structure and properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Bi(Mg<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>-0.38PbTiO<Subscript>3</Subscript> ceramics with MPB composition

0.62Bi(Mg_1/2Ti_1/2)O₃-0.38PbTiO₃-xwt%Bi₂O₃ (BMT-0.38PT-xBi₂O₃) ceramics were prepared by conventional powder-processing method. It indicated that the morphotropic phase boundary (MPB) region located in 0.0?≤?x?≤?0.3. For x?=?0.3, it exhibited good piezoelectric properties, d₃₃ ~245pC/N and k_p ~40 %. With the increase of Bi₂O₃ content, the Curie temperature (T_c) was found to increase, and the dielectric loss was found to decrease above 200 °C compared with BMT-0.38PT sample. Finally, it can be found that depolarization temperature was around 350 °C by thermal depoling method.     

Effects of MnO<Subscript>2</Subscript> addition on microstructure and electrical properties of (Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>) <Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>TiO<Subscript>3</Subscript> ceramics

In this letter, MnO₂-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT-6) lead-free piezoelectric ceramics were synthesized by solid state reaction, and the microstructure and electrical properties of the ceramics were investigated. X-ray diffraction (XRD) reveals that all specimens take on single perovskite type structure, and the diffraction peaks shift to a large angle as the MnO₂ addition increases. Scanning electron microscopy shows that the grain sizes increases, and then decreases with increasing the MnO₂ content. The experiment results indicate that the electrical properties of ceramics are significantly influenced by the MnO₂ content, and the ceramics with homogeneous microstructure and excellent electrical properties are obtained with addition of 0.3 wt% MnO₂ and sintered at 1160°C. The piezoelectric constant (d₃₃), the electromechanical coupling factor (k _p ), the dissipation factor (tan δ) and the dielectric constant (ɛ _r ) reach 160 pC/N, 0.29, 0.026 and 879, respectively. These excellent properties indicate that the MnO₂-doped BNBT-6 ceramics can be used for actuators.     

Defects and Transport in Langasite II: Donor-doped (La<Subscript>3</Subscript>Ga<Subscript>4.75</Subscript>Nb<Subscript>0.25</Subscript>SiO<Subscript>14</Subscript>)

The electrical conductivity of Nb doped langasite (La₃Ga_4.75Nb_0.25SiO₁₄) was examined as a function of temperature and oxygen partial pressure by complex impedance spectroscopy. A pO₂-independent regime was found at high pO₂ followed by a pO₂^{− 1/6} dependent regime at low pO₂. A defect model consistent with these results was derived in which the electron density n is fixed by the density of ionized Nb donors at high pO₂ and by the generation of oxygen vacancies at low pO₂. The temperature and oxygen partial pressure dependence of the electron density was obtained independently by thermoelectric power measurements. The Nb donor ionization energy was determined to be 1.52 ± 0.06 eV, confirming Nb to be a deep donor in langasite. By combining conductivity and thermoelectric power data, an expression for the electron mobility given by μ_e = 1.1× 10^{− 2}exp( ) was obtained. After evaluating the temperature dependent conductivity data under reducing conditions, in light of the defect model, a value for the reduction enthalpy (E_r = 6.57 ± 0.24 eV) was derived.     

Tunable Dielectric Characteristics of 0.9Pb(Fe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>/0.1CaTiO<Subscript>3</Subscript>

Tunable dielectric characteristics of 0.9Pb(Fe_1/2Nb_1/2)O₃/0.1CaTiO₃ relaxor ferroelectric ceramics were investigated as the function of DC bias field and temperature. High tunability (more than 20%) was obtained in the present ceramics under a relatively weak DC bias field (1.4 kV/cm). The value of tunability changed from negative to positive with increasing DC field. For the simulation of the dielectric constant under DC bias field, modified model needs to be constructed for the relaxor ferroelectrics. The dielectric constant curve as a function of temperature without and under DC field was well fitted using the equation of diffuse phase transition. The lower ε_max, higher T_max and higher diffuseness parameter under DC field were observed and only the lower ε_max contributed to positive tunability.     

Dielectric Properties and Sintering Characteristics of CaTiO<Subscript>3</Subscript>-(Li<Subscript>1/2</Subscript>Nd<Subscript>1/2</Subscript>)TiO<Subscript>3</Subscript> Ceramics

The dielectric properties and the sintering effect upon microstructure of (1–x) CaTiO₃-x(Li_1/2Nd_1/2)-TiO₃ Ceramics are investigated in this paper. Nd³⁺ and Mg^{2 +} ions co-substitution for Ca^{2 +} on A site improves the sintering characteristic of CaTiO₃ ceramics with forming orthorhombic perovskite structure. The structure of (1 – x) CaTiO₃-x(Li_1/2Nd_1/2)TiO₃ changes from orthorhombic to tetragonal as (Li_1/2Nd_1/2)TiO₃ addition increasing. Limited solubility of (Li_1/2Nd_1/2)TiO₃ in CaTiO₃ forming a part solid solution compound achieves the adjustment of for CaTiO₃ at low sintering temperature. The proper dielectric properties with = 78, tan = 0.0006, = +7 ppm/C are obtained for 0.8Ca_0.67(Nd,Mg)_0.22TiO₃-0.2(Li_1/2Nd_1/2)TiO₃ ceramics.     

Properties and crystallization kinetics of low temperature co-fired Li<Subscript>2</Subscript>O-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> electroceramics

The glass-ceramic in the Li₂O-Al₂O₃-SiO₂ system has been prepared by melt quenching route. The crystallization kinetics was studied by differential scanning calorimetry. The effects of sintering temperature on the phase transformation, sintering behavior, bulk density, microstructure, thermal expansion, bending strength and dielectric properties were also investigated by X-ray diffractometry and scanning electron microscopy. (Li, Mg, Zn)_1.7Al₂O₄Si₆O₁₂ is the first crystalline phase forming in the glass-ceramic and transforms to LiAlSi₃O₈ phase at 800 °C. The other two crystalline phases of ZrO₂ and CaMgSi₂O₆ precipitate at 700 and 750 °C, respectively. The densification of this LAS glass-ceramic starts at around 730 °C and stops at about 805 °C. The coefficient of thermal expansion increases with the increasing sintering temperature. The sample sintered at 800 °C for 30 min exhibited excellent properties. The nonisothermal activation energy of crystallization is 149 kJ/mol and the values of Avrami constant (n) are in the range of 3.2 to 3.9. The LAS glass-ceramic sintered at 800 °C for 30 min showed excellent properties. This makes that this material suitable for a number of LTCC applications.     

Structural,dielectric and magnetic properties of particulate composites of relaxor (BaTi<Subscript>0.85</Subscript>Sn<Subscript>0.15</Subscript>O<Subscript>3</Subscript>) and ferrite (NiFe<Subscript>2</Subscript>O<Subscript>4</Subscript>) synthesized by gel-combustion method

Particulate composites of (1-x) BaTi_0.85Sn_0.15O₃ – x NiFe₂O₄ (with x?=?5, 10,15 and 20 wt%) were synthesized using the solid-state reaction method by sintering at 1350 °C for 4 h. Formation of the diphase composites was confirmed by X-ray diffraction (XRD) and Fourier Transform Infra-red (FTIR) techniques. Temperature (RT-200 °C) and frequency (20 Hz- 1 MHz) dependent of AC conductivity, dielectric constant and dissipation have been studied. The dielectric constant exhibits strong frequency dispersion in the range 20 Hz-1 kHz which is attributed to Maxwell-Wagner interfacial polarization occurring at grain-grain-boundaries interface/interface of grains of BTS-NF. The M-H curve of all the composites exhibited a hysteresis loops typical charcateistic of a ferromagnetic material. The ferromagnetic ordering in the composites on account of NiFe₂O₄ as a constituent is explained using bound magnetic polarons (BMPs) model. The experimental magnetic data have been fitted to BMP model. Value of M_s is smaller, whereas of H_c and M_r are higher of the composites compared to value for NiFe₂O₄. The temperature at which divergence in the M vs. T plot in ZFC and FC starts is higher for the composites than for NiFe₂O₄.     

Microwave Dielectric Properties of CuO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

Microwave dielectric properties of low temperature sintering ZnNb₂O₆ ceramics doped with CuO-V₂O₅-Bi₂O₃ additions were investigated systematically. The co-doping of CuO, V₂O₅ and Bi₂O₃ can significantly lower the sintering temperature of ZnNb₂O₆ ceramics from 1150 to 870C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V₂O₅-Bi₂O₃ content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant ( _r) of ZnNb₂O₆ ceramics increased from 21.95 to 24.18 with increasing CuO-V₂O₅-Bi₂O₃ additions from 1.5 to 4.0 wt%. The quality factors (Q× f) of this system decreased with increasing CuO-V₂O₅-Bi₂O₃ content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q× f values of samples with CuO-V₂O₅-Bi₂O₃ additions are lower than that of un-doped ZnNb₂O₆ ceramics sintered at 1150C for 2 h. The temperature coefficient of resonant frequency ( _f) changed from –33.16 to –25.96 ppm/C with increasing CuO-V₂O₅-Bi₂O₃ from 1.5 to 4.0 wt%     

Excellent dielectric constants observed in heterogeneous conduction Ba(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> ceramics doped with Sr(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript>

The (1-x)Ba(Zr_0.25Ti_0.75)O₃-xSr(Fe_0.5Nb_0.5)O₃ or (1-x)BZT-xSFN ceramics have been fabricated via a solid-state reaction technique. All ceramics exhibit a pure phase perovskite with cubic symmetry. The addition of a small amount of SFN (x?=?0.1) produces an obvious change in dielectric behavior. Very high dielectric constants (ε_r?>?164,000 at 1 kHz and temperature?>?150°C) are observed and the value is obviously higher than dielectric constants for Ba(Zr_0.25Ti_0.75)O₃ and Sr(Fe_0.5Nb_0.5)O₃ ceramics. The ferroelectric measurement data suggests that the unmodified sample exhibited a ferroelectric behavior. However, a transformation from a ferroelectric to a relaxor-like behavior is noted with increasing x concentration. Impedance Spectroscopy (IS) analysis indicates that the presence of excellent dielectric constants is due to the heterogeneous conduction in the ceramics after adding SFN, which can be explained in terms of the Maxwell-Wagner polarization mechanism.     

Studies of structural,dielectric and impedance properties of Bi<Subscript>9</Subscript>Fe<Subscript>5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> ceramics

Bi₉Fe₅Ti₃O₂₇ is an eight-layered material belonging to the family of bismuth layered structured ferroelectromagnets. The polycrystalline sample of this compound was prepared by a standard solid-state reaction technique. The formation of the compound in an orthorhombic crystal structure was confirmed by an X-ray diffraction (XRD) technique (lattice parameters: a?=?5.5045[27] Å, b?=?5.6104[27] Å, c?=?76.3727[27] Å). Detailed studies of surface morphology of the compound using scanning electron microscopy (SEM) exhibit that the compound has domains of plate shaped grains. Studies of dielectric and electric properties in a wide temperature range (30–500 °C) at different frequencies (100 Hz–1 MHz) exhibit an anomaly at 291?±?2 °C, which is related to ferroelectric to paraelectric phase transition as suggested by hysteresis loop at room temperature. The values and nature of temperature variation of dc conductivity exhibit the NTCR behavior of the compound.