一种激光能见度仪设计的新方法

该方法改进了传统透射式仪和散射式仪的结构,利用反射镜构成开放气室实现了激光往返式透射法测量方案,运用位移调节器实现了差分测量大气消光系数。基于此方法设计的激光测量系统不仅兼容了透射法的测量原理和后向散射法的单端收发等优点,还具有抗环境污染能力强和测量灵敏度可调等独特优点。本文对该系统进行了详尽的理论分析,同时,还设计了传感器的结构,精选了性能指标优异的光学元件和估算了测量精度,为仪器的硬件实现提供了重要参考方案。     

室内模拟环境下动态调制传递函数检测方法

针对车载视觉智能感知、低空区域防务等光电成像系统远距离观测动态性能测评需求,研制了室内运动目标模拟系统。基于线性移不变系统模型,分析了“三杆靶”、“四杆靶”靶标MTF测量原理,提出了一种基于变频栅条靶标的动态MTF检测方法,给出了变频靶标设计方案和MTF解算方法。完成了“三杆靶”和变频靶标测量方法的静态和动态MTF对比测试实验。实验结果表明:提出的变频靶标动态MTF检测方法与“三杆靶”测量方法相比,在静态MTF检测时测量数据的相对最大偏差比率为1.9%,动态MTF检测时测量数据相对最大偏差比率为2.8%,是一种高精度数字化动态MTF检测方法。该方法可以从一幅靶标图像中解算出MTF曲线,在动态MTF检测技术领域比“刀口法”、“三杆靶”、“四杆靶”等方法更具优势。     

线阵CCD的板材边缘检测与发展

论述了利用线阵CCD对运动板带材进行边缘检测的方法.介绍了其检测原理及系统构成.详述了该检测系统的硬件、软件设计方案,并重点分析了提高检测精度及测量实时性的难点及解决方法.     

基于AT89S52单片机的超声波倒车雷达系统的设计

利用超声波测距原理,出于低成本、高精度的目的,提出了一种基于AT89S52的超声波倒车雷达系统的设计方案。硬件部分采用AT89S52单片机作为控制器,主要有超声波发射电路、超声波接收电路、温度检测电路、LCD显示电路和报警电路。本文在分析超声波测距原理的基础上,给出了实现超声波倒车雷达系统的软件设计流程图和硬件设计电路图。该系统测量精度为1cm,完全能够满足汽车倒车系统的设计要求。     

基于四象限探测器的桥梁挠度实时监测系统研究

为了实现高精度的桥梁挠度测量,提出了一种基于四象限探测器的桥梁挠度实时监测方法和系统。四象限探测器能使系统在挠度测量的同时还能获得被测点的横向位移,实现二维测量,并且具有高频测量的能力。用本文方法和系统对桥梁挠度进行单点或多点测量,结果表明：测试单点纵向位移能达到20μm的分辨率,测试精度可达到0.1 mm。     

基于图像位移测速的电机转子位置和速度检测方法

引入图像位移计算方法对电机转子位置和速度进行了检测。分析了自相关算法的原理并提出了改进算法,并设计了线阵CCD图像采集系统,构建了图像实时处理软硬件平台,并对测试系统进行了标定,实现了电机转子位置的瞬时位置和速度检测。实验结果表明,该检测方法测量精度高,实时性好,对电机实时性高精度控制具有较好的理论和实践意义。     

ARM与DSP双核炉膛火焰图像CCD监测系统

简要论述了彩色CCD图像检测火焰温度场的原理和实现方法,针对火电厂现有锅炉火焰监视、温度场测量和燃烧诊断系统中存在的问题,提出了一种以ARM和DSP双核体系结构的嵌入式图像火焰监测系统的设计方案,设计了ARM和DSP系统单元间的硬件方案和软件设计.该系统具有性能高、功耗和成本低、稳定性和实时性好等优点.     

基于运动控制器的全闭环控制系统

利用运动控制器作为上位控制单元,采用交流伺服驱动器和伺服电机作为执行机构,采用光栅尺作为直线位移检测装置,设计出一种新型的全闭环运动控制系统,实现对伺服电机高速、高精度的控制。介绍了控制系统的组成及硬件原理,给出了控制系统软件设计的结构。这种系统既具有实时性和快速性,又方便实用。     

一种高可靠性的频率测量系统

提出并研制了一种高可靠性、高精度、使用简单且便于维护的频率测量系统,该系统用于电力电子测量领域。其硬件系统以嵌入式PC104计算机为测控平台,软件系统以LabWindoWs/CVI为开发平台,采用测周期法,依据频率大小选用不同的基准频率。经实际测试证实,该设计满足精度和实时性的要求,检测效率高,便于操作与维护。该系统亦可用于其他要求高精度频率测量的领域中。     

基于角反射器的单端透射式能见度仪的研究

大气水平能见度是交通运输等领域的重要气象要素之一。基于透射式水平能见度的测量原理,提出采用角反射器的单端透射式能见度测量方案。该系统的发射器和接收器组合一体,便于光路校准,光路往返增加了水平气柱样本长度,扩大了能见度测量范围。利用锁相放大技术抑制噪声有效提高能见度测量精度,测试结果得出,锁相放大电路测量大气透过率与实际值的相关系数达0.9998。最后给出大气能见度实测结果,定量计算显示,与国外能见度仪的测量结果相关系数R为0.9904。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.