Fabrication of Transparent, Sintered Sc2O3 Ceramics

We report here the fabrication of transparent Sc₂O₃ ceramics via vacuum sintering. The starting Sc₂O₃ powders are pyrolyzed from a basic sulfate precursor (Sc(OH)_2.6(SO₄)_0.2·H₂O) precipitated from scandium sulfate solution with hexamethylenetetramine as the precipitant. Thermal decomposition behavior of the precursor is studied via differential thermal analysis/thermogravimetry, Fourier transform infrared spectroscopy, X-ray diffractometry, and elemental analysis. Sinterability of the Sc₂O₃ powders is studied via dilatometry. Microstructure evolution of the ceramic during sintering is investigated via field emission scanning electron microscopy. The best calcination temperature for the precursor is 1100°C, at which the resultant Sc₂O₃ powder is ultrafine (∼85 nm), well dispersed, and almost free from residual sulfur contamination. With this reactive powder, transparent Sc₂O₃ ceramics having an average grain size of ∼9 μm and showing a visible wavelength transmittance of ∼60–62% (∼76% of that of Sc₂O₃ single crystal) have been fabricated via vacuum sintering at a relatively low temperature of 1700°C for 4 h.     

Nano-Blast Synthesis of Nano-size CeO2–Gd2O3 Powders

CeCl₃·7H₂O and GdCl₃·6H₂O that were dissolved in water were precipitated with urea (NH₂CONH₂) to produce matrix agglomerates for three-component nano-reactors. Mixing hexamethylenetetramine with dilute nitric acid resulted in the formation of well-dispersed nano-particles of cyclotrimetilene trinitramine (C₃H₆N₆O₆) (RDX) in the solvent. Nano-reactors were produced by impregnating the nano-C₃H₆N₆O₆ into the matrix agglomerates of an intermediate complex of cerium and gadolinium compounds. Blast initiation of the C₃H₆N₆O₆ resulted in extremely rapid detonation and gaseous products formation at temperatures of 2000°–5000°C, which were compressed into a volume nearly equal to the initial volume of each RDX nano-particle. Multiple "nano-blasts" occurred in the volume of each nano-reactor. The impact of the blast waves led to fragmentation of the surrounding matter. The evolution of a large volume of gaseous products dissipated the heat of the process and limited temperature increase, thus reducing the possibility of local sintering among the primary particles. The short-term high temperature generated during the blasts enhanced the solid solubility of the metal oxides. Uniform aggregates of 22∼74 nm consisting of 6∼14 nm crystallites of gadolinia in ceria solid solution were synthesized.     

Sr3LaNb3O12: A New Low Loss and Temperature Stable A4B3O12-Type Microwave Dielectric Ceramic

The microwave dielectric properties of dense ceramics of a new A₄B₃O₁₂ type cation-deficient hexagonal perovskite Sr₃LaNb₃O₁₂ are reported. Single-phase powders can be obtained from the mixed-oxide route at 1320°C and dense ceramics (>96% of the theoretical X-ray density) with uniform microstructures (5–12 um) can be obtained by sintering in air at 1430°C. The ceramic exhibits a moderate dielectric constant ɛ_r∼36, a high quality factor Q × f ∼45 327 GHz, and a low temperature coefficient of resonant frequency τ _f of −9 ppm/°C.     

Spark Plasma Sintering of Nano-Sized TiN Prepared from TiO2 by Controlled Hydrolysis of TiCl4 and Ti(O-i-C3H7)4 Solution

Nano-sized TiO₂ powders were prepared by controlled hydrolysis of TiCl₄ and Ti(O-i-C₃H₇)₄ solutions and nitrided in flowing NH₃ gas at 700°–1000°C to form TiN. Nano-sized TiN was densified by spark plasma sintering at 1300°–1600°C to produce TiN ceramics with a relative density of 98% at 1600°C. The microstructure of the etched ceramic surface was observed by SEM, which revealed the formation of uniformly sized 1–2 μm grains in the TiCl₄-derived product and 10–20 μm in the Ti(O-i-C₃H₇)₄-derived TiN. The electric resisitivity and Vickers micro-hardness of the TiN ceramics was also measured.     

Microwave Dielectric Properties of Hexagonal 12R-Ba3LaNb3O12 Ceramics

The dielectric properties of dense ceramics of the n =0 member of a newly identified homologous series Ba_{3+ n} LaNb₃Ti _n O_{12+3 n} , where n =0, 1, and 2, are reported. Single-phase powders can be obtained from the mixed-oxide route at 1350°C and dense ceramics (>97% of the theoretical X-ray density) with uniform microstructures (3–5 μm) can be obtained by sintering in air at 1500°C. The ceramics are excellent dc insulators with a band gap >2.6 eV that resonate at microwave frequencies with a relative permittivity, ɛ_r∼44, a quality factor, Q × f _r, of ∼9000 at f _r∼5.5 GHz and a temperature coefficient of resonant frequency, TC_f,∼−100 ppm/K.     

Toughening and Strengthening of NiAl with Al2O3 by the Addition of ZrO2(3Y)

NiAl/10-mol%-ZrO₂(3Y) composites of almost full density have been fabricated via spark plasma sintering (SPS) for 10 min at 1300°C and 30 MPa. The former intermetallic compound, which contains a trace amount of Al₂O₃, has been prepared via self-propagating high-temperature synthesis. The composite microstructures are such that tetragonal ZrO₂ (∼0.2 μm) and Al₂O₃ (∼0.5 μm) particles are located at the grain boundaries of the NiAl (∼46 μm) matrix. Improved mechanical properties are obtained: the fracture toughness and bending strength are 8.8 MPa·m^1/2 and 1045 MPa, respectively, and high strength (>800 MPa) can be retained up to 800°C.     

Mullite Crystallization from SiO2-Al2O3 Melts

SiO₂-Al₂O₃ melts containing 42 and 60 wt% A1₂O₃ were homogenized at 2090°C (∼10°) and crystallized by various heat treatment schedules in sealed molybdenum crucibles. Mullite containing ∼78 wt% A1₂O₃ precipitated from the 60 wt% A1₂O₃ melts at ∼1325°± 20°C, which is the boundary of a previously calculated liquid miscibility gap. When the homogenized melts were heat-treated within this gap, the A1₂O₃ in the mullite decreased with a corresponding increase in the Al₂O₃ content of the glass. A similar decrease of Al₂O₃ in mullite was observed when crystallized melts were reheated at 1725°± 10°C; the lowest A1₂O₃ content (∼73.5 wt%) was in melts that were reheated for 110 h. All melts indicated that the composition of the precipitating mullite was sensitive to the heat treatment of the melts.     

Single-Calcination Synthesis of Pyrochlore-Free 0.9Pb(Mg1/3Nb2/3)O3–0.1PbTiO3 and Pb(Mg1/3Nb2/3)O3 Ceramics Using a Coating Method

A coating approach for synthesizing 0.9Pb(Mg_1/3Nb_2/3)O₃–0.1PbTiO₃ (0.9PMN–0.1PT) and PMN using a single calcination step was demonstrated. The pyrochlore phase was prevented by coating Mg(OH)₂ on Nb₂O₅ particles. Coating of Mg(OH)₂ on Nb₂O₅ was done by precipitating Mg(OH)₂ in an aqueous Nb₂O₅ suspension at pH 10. The coating was confirmed using optical micrographs and zeta-potential measurements. A single calcination treatment of the Mg(OH)₂-coated Nb₂O₅ particles mixed with appropriate amounts of PbO and PbTiO₃ powders at 900°C for 2 h produced pyrochlore-free perovskite 0.9PMN–0.1PT and PMN powders. The elimination of the pyrochlore phase was attributed to the separation of PbO and Nb₂O₅ by the Mg(OH)₂ coating. The Mg(OH)₂ coating on the Nb₂O₅ improved the mixing of Mg(OH)₂ and Nb₂O₅ and decreased the temperature for complete columbite conversion to ∼850°C. The pyrochlore-free perovskite 0.9PMN–0.1PT powders were sintered to 97% density at 1150°C. The sintered 0.9PMN–0.1PT ceramics exhibited a dielectric constant maximum of ∼24 660 at 45°C at a frequency of 1 kHz.     

Synthesis and Electrical Properties of Stabilized Manganese Dioxide (α-MnO2) Thin-Film Electrodes

Manganese dioxide (α-MnO₂) thin films have been explored as a cathode material for reliable glass capacitors. Conducting α-MnO₂ thin films were deposited on a borosilicate glass substrate by a chemical solution deposition technique. High carbon activities originated from manganese acetate precursor, (Mn(C₂H₃O₂)₂·4H₂O) and acetic acid solvent (C₂H₄O₂), which substantially reduced MnO₂ phase stability, and resulted in Mn₂O₃ formation at pyrolysis temperature in air. The α-MnO₂ structure was stabilized by Ba²⁺ insertion into a (2 × 2) oxygen tunnel frame to form a hollandite structure. With 15–20 mol% Ba addition, a conducting α-MnO₂ thin film was obtained after annealing at 600–650°C, exhibiting low electrical resistivity (∼1 Ω·cm), which enables application as a cathode material for capacitors. The hollandite α-MnO₂ phase was stable at 850°C, and thermally reduced to the insulating bixbyte (Mn₂O₃) phase after annealing at 900°C. The phase transition temperature of Ba containing α-MnO₂ was substantially higher than the reported transition temperature for pure MnO₂ (∼500°C).     

Synthesis of AlN Nanopowder from γ-Al2O3 by Reduction–Nitridation in a Mixture of NH3–C3H8

Aluminum nitride (AlN) powders were synthesized by gas reduction–nitridation of γ-Al₂O₃ using NH₃ and C₃H₈ as the reactant gases. AlN was identified in the products synthesized at 1100°–1400°C for 120 min in the NH₃–C₃H₈ gas flow confirming that AlN can be formed by the gas reduction–nitridation of γ-Al₂O₃. The products synthesized at 1100°C for 120 min contained unreacted γ-Al₂O₃. The ²⁷A1 MAS NMR spectra show that Al–N bonding in the product increases with increasing reaction temperature, the tetrahedral AlO₄ resonance decreasing prior to the disappearance of the octahedral AlO₆ resonance. This suggests that the tetrahedral AlO₄ sites of the γ-Al₂O₃ are preferentially nitrided than the AlO₆ sites. AlN nanoparticles were directly formed from γ-Al₂O₃ at low temperature because of this preferred nitridation of AlO₄ sites in the reactant. AlN nanoparticles are formed by gas reduction–nitridation of γ-Al₂O₃ not only because the reaction temperature is sufficiently low to restrict grain growth, but also because γ-Al₂O₃ contains both AlO₄ and AlO₆ sites, by contrast with α-Al₂O₃ which contains only AlO₆.     

Influence of Processing Conditions on the Electrical Properties of CaCu3Ti4O12 Ceramics

The electrical properties of a series of CaCu₃Ti₄O₁₂ ceramics prepared by the mixed oxide route and sintered at 1115°C in air for 1–24 h to produce different ceramic microstructures have been studied by Impedance Spectroscopy. As-fired ceramics are electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries, and can be modelled to a first approximation on an equivalent circuit based on two parallel RC elements connected in series. The grain boundary resistance and capacitance values vary as a function of sintering time and correlate with the ceramic microstructure based on the brickwork layer model for electroceramics. The large range of apparent high permittivity values for CaCu₃Ti₄O₁₂ ceramics is therefore attributed to variations in ceramic microstructure. The grain-boundary resistance decreases by three to four orders of magnitude after heat treatment in N₂ at 800°–1000°C but can be recovered to the original value by heat treatment in O₂ at 1000°C. The bulk resistivity decreases from ∼80 to 30 Ω·cm with increasing sintering time but is independent of heat treatment in N₂ or O₂ at 800°–1000°C. The origin of the bulk semiconductivity is discussed and appears to be related to partial decomposition of CaCu₃Ti₄O₁₂ at the high sintering temperatures required to form dense ceramics, and not to oxygen loss.     

Preparation and Sintering Behavior of Fine-Grained A12O3-SiO2 Composite

A fine, uniform A1₂O₃-SiO₂ powder was prepared by heterocoagulation of narrow Al₂O₃ and SiO₂ powders. This composite powder was dispersed, compacted, and fired in air at 900° to 1580°C for 1 to 13 h. Full density was achieved at 1550°C with the formation of a mullite phase. Relative densities of 83% and 98% (0.3 μm grain size) were measured for samples sintered at 1200°C for 13 h and at 1400°C for 1 h, respectively.     

A New Method for Synthesizing Li2.06Nb0.18Ti0.76O3 Powder at Low Temperatures

Li_2.06Nb_0.18Ti_0.76O₃ powder has been successfully prepared at low temperatures via a facile and manageable, activated pretreatment on the inert raw Nb₂O₅. It is demonstrated that with triethanolamine, citric acid, and hydrogen peroxide, this simple pretreatment process could activate Nb₂O₅ efficiently. Pure Li₂TiO₃ solid solution phase was thus obtained by calcining the mixture of the activated Nb₂O₅, LiOH·H₂O, and Ti(C₄H₉O)₄ at temperatures as low as 650°C, which is about 200°C lower than that of the traditional solid-state method. To the best of our knowledge, this temperature is the lowest one for preparing Li₂TiO₃ solid solution. Additionally, the phase transformation and the morphology of the final powder are also discussed.     

Structure–Property Relationships of BaTi1−2yGayNbyO3 (0≤y≤0.35) Ceramics

BaTi_{1−2 y} Ga _y Nb _y O₃ (BTGN) (0≤ y ≤0.35) powders were synthesized at 1300°C by the conventional solid-state method. Room temperature x-ray diffraction patterns for y ≤0.025 and 0.05≤ y ≤0.30 can be indexed as the tetragonal ( P 4 mm ) and cubic ( Pm     m ) polymorphs of BaTiO₃, respectively, whereas y =0.35 consists of a mixture of the cubic polymorph of BaTiO₃ and an 8H hexagonal-type perovskite ( P 6₃/ mcm ) isostructural with Ba₈Ti₃Nb₄O₂₄. Scanning electron microscopy shows the microstructures of BTGN ceramics ( y ≤0.30) sintered at 1500°C to consist of fine grains (1–3 μm) within a narrow grain size and shape distribution. Room temperature transmission electron microscopy for y ≤0.08 reveals core–shell structures and (111) twins in some grains; however, their relative volume decreases with y . Energy dispersive spectroscopy reveals the cores to be Ga and Nb deficient with respect to y . For y >0.08 there is no evidence of core–shell structures, however, some grains have a high density of dislocations, consistent with chemical inhomogeneity. BTGN ceramics exhibit a diverse range of dielectric behavior in the temperature range 120–450 K and can be subdivided into two groups. 0.025≤ y ≤0.15 display modest ferroelectric relaxor-type behavior, with high room temperature permittivity, ɛ₂₅', (>300 at 10 kHz), whereas 0.25≤ y ≤0.30 are temperature and frequency stable dielectrics with ɛ₂₅'<100 that resonate at microwave frequencies with modest quality factors, Q × f , ∼3720 GHz (at ∼5 GHz) for y =0.30.     

Fabrication and Photoluminescence Characteristics of Eu3+-Doped Lu2O3 Transparent Ceramics

A novel co-precipitation process was adopted for the preparation of highly sinterable europium-doped lutetia powders using ammonium hydroxide (NH₃·H₂O) and ammonium hydrogen carbonate (NH₄HCO₃) as the mixed precipitant. The resultant powders calcined at 1000°C for 2 h showed good dispersity and excellent sinterability. Highly transparent polycrystalline lutetia ceramics with a relative density of ∼99.9% were fabricated by pressureless sintering in flowing H₂ atmosphere at 1850°C for 6 h without any additives. The average grain sizes of the transparent material were estimated to be 50–60 μm. Optical in-line transmittance in the visible wavelength region for Lu₂O₃ ceramics (1 mm in thickness) reached 80%. The luminescence and decay behavior of the obtained transparent plate and the corresponding nanophosphors were also investigated.     

Ionic Conductivity Enhancement of La2Mo2−xWxO9 Nanocrystalline Films Deposited on Alumina Substrates by the Sol–Gel Method

Dense, crack-free, and uniform La₂Mo_{2− x} W _x O₉ ( x =0, 0.1, and 0.2) nanocrystalline films were successfully synthesized on poly-alumina substrates via a modified sol–gel method, with inorganic salt of La(NO₃)₃·6H₂O, (NH₄)₆Mo₇O₂₄·4H₂O, and (NH₄)₆H₂W₁₂O₂₄ as precursors. Pure La₂Mo₂O₉ phase was confirmed by X-ray diffractometer when the annealing temperature was >500°C. The average grain size of the La₂Mo_{2− x} W _x O₉ films is in the range of 90–400 nm, depending upon the conditions of thermal treatment, and the thickness of films can reach 1 μm by repetitive spin-coating. The electrical conductivity increases with decreasing grain size and reaches 0.074 S/cm at 600°C in the film with a grain size of 90 nm, which is one order of magnitude higher than that in the corresponding bulk materials. W-doping can suppress the phase transition that occurs at 580°C in pure La₂Mo₂O₉ and enhance the low-temperature ionic conductivity. Furthermore, the activation energy of conductivity in the nanocrystalline La₂Mo₂O₉ films decreases to about 0.6 eV in comparison with 1.0 eV in the bulk ones, which implies that the grain resistance prevails in the total resistance, when grain size reduces to nanometer domain.     

Effects of Transition-Metal Substitution on the Catalytic Properties of Barium Hexaaluminogallate

The effects of the substitution of transition-metal ions and/or reductant gases on the catalytic properties of barium hexaaluminogallate were investigated. Transition-metal-substituted hexaaluminogallates (BaM(Al,Ga)₁₁O₁₉, M = transition metal, Al/Ga = 9/3) were synthesized from aqueous metal nitrates and ammonium carbonate by the coprecipitation followed by crystallization at 1100°C. The direct NO _x reduction was observed over BaM(Al,Ga)₁₁O₁₉ to be around 10%. The NO _x removal activity of BaM(Al,Ga)₁₁O₁₉ powders was improved by addition of C₃H₆ as a reductant gas. Co-, Ni- and Cu-substituted BaM(Al,Ga)₁₁O₁₉ catalysts exhibited about 40% NO _x reduction with C₃H₆ in excess oxygen at a high space velocity of 10 000 h⁻¹. The NO _x reduction on Mn- and Fe-substituted BaM(Al,Ga)₁₁O₁₉ catalysts was less than 10% even in the presence of C₃H₆. The temperature of the effective NO _x reduction on BaM(Al,Ga)₁₁O₁₉ catalysts could be adjusted from 350° to 500°C by the selection of the transition-metal substitution in the catalysts. The catalysts hold high activities for NO _x reduction even at 500°C in water vapor produced in the combustion system of reductant gases.     

Fabrication of Textured Bi3NbTiO9 Ceramics

Highly textured Bi₃NbTiO₉ ceramics are fabricated by normal sintering from molten salt-synthesized plate-like crystallites. Fine Bi₃NbTiO₉ plate-like crystallites (∼1 μm) not only facilitate the densification, but also enhance texture in Bi₃NbTiO₉ ceramics. Weak-agglomerated platelets exhibit higher sinterability and can be densified at a temperature as low as 1000°C, which is about 100°C lower than that of equiaxed powders prepared by directly calcining Bi₃NbTiO₉ precursor. Meanwhile, the orientation degree of textured Bi₃NbTiO₉ ceramics increases with sintering temperature. Highly oriented Bi₃NbTiO₉ (orientation degree of ∼0.91) ceramic with a relative density of ∼92% is obtained at 1150°C. Because of the oriented grain microstructure, textured Bi₃NbTiO₉ ceramic exhibits anisotropic electrical properties.     

Effects of Silver Doping on the Sol–Gel-Derived Ba4(Nd0.7Sm0.3)9.33Ti18O54 Microwave Dielectric Ceramics

Tungstenbronze-type Ba₄(Nd_0.7Sm_0.3)_9.33Ti₁₈O₅₄ (BNST) microwave dielectric ceramics doped with 0–10 wt% silver (Ag) particles were successfully fabricated by a citrate sol–gel method. The influence of Ag doping on the sinterability, microstructure, bulk conductivity, and dielectric properties of BNST was investigated. The desired tungstenbronze-type phase was obtained at 900°–950°C. The sintering temperature of BNST decreased to 1100°C with the aid of a small amount of Ag addition (1 wt%). No chemical reaction between the tungsenbronze phase and Ag was detected. The particle size of the powders decreased with increasing Ag content up to 1 wt% and it then increased with a further increase in the Ag content. The dense fine-grained ceramics with submicrometer grains (∼300 nm) were obtained with 1 wt% Ag addition. The submicrometer-grained ceramics had excellent dielectric properties of ɛ_r∼81 and Q × f ∼11 000 GHz. Both the dielectric constant and dielectric loss significantly increased with large additions (>3 wt%) of Ag due to the percolation effect.     

Grain Growth in Two-Phase Ceramics: Al2O3 Inclusions in ZrO

The effect of Al₂O₃ inclusions with a greater average size (0.6 μm) than the average particle size of the major phase powder (<0.1 μm) on grain gowth was examined by sintering ZrO₂/Al₂O₃ composites (0,3,5,10, and 20 vol%) at 1400°C and then heat-treating at temperatures up to 1700°C. Normal grain growth was observed for all conditions. The inclusions appeared to have no effect on grain growth until the ZrO₂ grain size was ∼1.5 times the average inclusion size. Grain growth inhibition increased with volume fraction of the Al₂O₃ inclusion phase. At temperatures 1600°C, the inclusions were relatively immobile and most were located within the ZrO₂ grains for volume fractions <0.20; at higher temperatures, the inclusions could move with the grain boundary to coalesce. Grain growth was less inhilited when the inclusions could move with the boundaries, resulting in a larger increase in grain size than observed at lower temperatures. Analogies between mobile voids, entrapped within grain at lower temperature due to abnormal grain growth during the last state of sintering, and the observations concerning the mobile inclusions are made suggesting that grain-boundary movement can "sweep" voids to grain boundaries and eventually of four-grain junctions, where they are more likely to disappear by mass transport.