基于PERL技术的硅基PIN光电二极管的设计与仿真

缺乏高质量的硅光电接受器件一直制约着全硅光电子回路的发展。分析讨论了PERL太阳能电池的高效光电特性技术,并将其应用于硅光电二极管,设计了一种高响应度,高截止频率的硅基PIN光电二极管的器件结构,说明了该结构的技术特点与制备工艺。使用SUPREM-IV仿真器对该器件进行了模拟仿真,讨论了I层的长度与厚度对器件性能的影响。     

硅全耗尽背照式光电二极管的光谱响应

建立了一个预测硅全耗尽背照式光电二极管响应率的解析模型.分析了所加反偏压与光谱响应之间的关系,解出了硅全耗尽背照式光电二极管的响应率和器件各参数之间的关系,并根据选定参数值计算出了给定外加偏压下400～1 100 nm范围的光谱响应曲线,预测探测器光谱响应峰值在1μm,峰值响应率达到0.72 A/W.实测结果表明:器件峰值响应与预测一致,反偏压对响应率的影响与预测相同,即响应率随着反偏压的升高而增大.并且在各种反偏压下的光谱响应曲线形状与预测基本吻合,证明了建立的模型可以正确地预测器件性能.     

硅基PIN光电探测器的设计与模拟

介绍了单片集成硅光接收器的研究背景,阐述了硅光电探测器的工作机理.设计了一种应用于单片集成硅光接收器的PIN结构光电探测器,并用Silvaco软件对光电探测器的器件结构、光谱响应、响应电流及其随入射光功率的变化、器件的暗电流分别进行了模拟,对模拟结果进行了分析.设计了该光电探测器的版图,给出了其主要工艺流程,搭建了其光响应谱测试电路.最后对研究结果进行了总结.     

红外接收用PIN硅光电探测器研究

PN二极管是一种常用的光电探测器,其中PIN光电二极管因其体积小、噪声低、响应速度快、光谱响应性能好等特点已作为一个标准件广泛应用于红外遥控接收领域。文章基于半导体材料的光吸收特性和光电效率转换原理,同时结合减反射膜理论,对PIN光电二极管进行研究,通过衬底材料的合理选择,对减反射膜折射率及厚度进行对比实验,验证了SiN膜层较SiO2膜有着更为良好的减反射效果,可以有效提升光敏器件的光电转换效率,同条件下器件的光生电流得到提升,为今后光电器件的生产、开发应用提供了参考。     

基于湿法腐蚀工艺的高性能黑硅光电探测器

采用基于硝酸/氢氟酸/磷酸/硫酸混合液的湿法腐蚀工艺,实现了高吸收效率的黑硅结构的制备与工艺集成,获得了具有近红外响应增强效果的黑硅PIN光电探测器,并与未集成黑硅的PIN光电探测器的性能参数进行了对比测试.测试结果显示,黑硅光电探测器在1 060 nm波长下的响应度达到0.69 A/W(量子效率80.7％),较未集成黑硅的器件提高了 116％;黑硅探测器暗电流小于8 nA,响应时间小于8 ns,电容小于9 pF,与未集成黑硅的器件相当.得益于工艺兼容性,所采用的黑硅技术具有广泛应用于硅基近红外PIN,APD,SPAD,SPM等光电探测器的潜力,可显著提高器件的响应率、量子效率、响应速度、击穿电压温度系数等性能.     

伽马射线辐照对硅光电二极管性能的影响

研究了伽马()射线辐照对星上定标用硅光电二极管性能的影响。使用硅光电二极管分别接受20 krad(Si)、35 krad(Si)、50 krad(Si)总剂量的射线辐照,对比了器件在不同辐照剂量下暗电流及光谱响应度的变化。结果显示在35 krad(Si)以下剂量照射下,硅光电二极管暗电流及光谱响应度均未发现明显的变化,在50 krad(Si)剂量照射下,参试样品出现暗电流增加的现象,但该变化在定标器应用过程中带来的影响可以忽略。试验结果表明,参试的硅光电二极管在空间辐照环境下具有良好的稳定性及可靠性,可以作为在轨定标器可见波段探测单元备选器件。     

硅基650nm增强型光电探测器

通过在硅PIN结构的基础上进行改进,采用硅P＋PIN结构,研制出650nm增强型光电探测器。详细介绍了器件结构设计和制作工艺。对器件响应度、暗电流和响应速度等参数进行计算与分析。实验结果表明,器件响应度达0.448A/W（λ=650nm）,暗电流达到0.1nA（VR=10V）,上升时间达到3.2ns。     

PIN结光电二极管的工艺原理和制造

PIN结构的二极管是一种特殊的电荷存储二极管,由于功耗小速度快等优点而被广泛应用.PIN结构的光电二极管是一种常用的光电探测器.本文阐述了PIN结构的光电二极管的器件特性和工艺制程,指出工艺过程中存在的问题.     

硅PIN光电二极管γ电离脉冲辐射的数值模拟

分析了γ电离脉冲辐射诱发硅PIN光电二极管产生光电流的机理.建立了硅PIN光电二极管的器件物理模型以及γ电离脉冲辐射效应模型;运用MEDICI软件,进行了辐射效应数值模拟计算.得出了γ电离脉冲辐射剂量率在10°～109Gy(Si)/s范围内,诱发硅PIN光电二极管光电流变化的初步规律.对比了辐射效应数值模拟结果与国外相关文献给出的辐照实验结果.

Abstract：

The mechanism of photocurrent of Si PIN photodiode induced by γ ionization pulse radiation is analyzed.The device physics and γ ionization pulse radiation models are established to simulate photocurrent of Si PIN photodiode by MEDICI software.The primary regularity of photocurrent of Si PIN photodiode is concluded by γ ionization pulse radiation with the dose rate of 10~0～10~9 Gy (Si)/s.The Simulation results are in agreement with the experimental results given in correlative literatures.     

遥感用硅PIN二极管

本工作研制适合于在0.5～1.1μm和0.55～0.75μm波段内工作的硅PIN光电二极管。叙述了器件的设计考虑和制造,分别采用双面扩散和高阻外延片单面扩散两种方法制造该器件,达到了预期的要求。文中给出了器件的光谱响应、暗电流、探测率,响应速度及响应均匀性等结果,并进行了讨论。研制出的器件性能良好,探测率D*为7×10~(12)cmHz~(1/2)/w左右。     

An integrated PIN/MISS OEIC for high current photoreceiverapplications

A new PIN/MISS photoreceiver with very high output current has been developed by using the combination of an amorphous silicon germanium alloy PIN photodiode and a metal-insulator-semiconductor switch (MISS) device. The developed photoreceiver uses a PIN photodiode as the light absorption structure and light wavelength selector and the MISS device as an actuator to drive an electronic load. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6 V under an incident light power of P_in=100 μW, and has a rise time of 465 μs with a load resistance of R=1 kΩ. The peak response wavelength of the PIN photodiode is at 905 nm, i.e., infrared light. Thus the high output current PIN/MISS photoreceiver is a good candidate for some specific applications     

Spectral response measurements on polarisation splitting ratio of fused-taper single-mode fibre couplers

Using a Ge PIN photodiode cooled to 77 K (?196°C) with liquid nitrogen and the lock-in amplification technique, an automatic polarisation spectral response measurement system with a measuring dynamic range of about 36 dB has been developed. It has been confirmed experimentally that the spectral response of polarisation beam-splitting ratios of fused-taper fibre couplers depend on the incident polarisation angle     

激光对PIN结光电二极管热破坏机理的研究

就高功率激光对ＰＩＮ结光电二极管因热效应引起的硬破坏过程进行了理论和实验研究．提出激光的热效应与伴随等离子体扩展时向外喷溅形成的冲刷效应是导致硅光二极管被破坏的主要原因。得到了Ｑ开关ＹＡＧ激光与ＰＩＮ结光电二极管器件相互作用时的热分布、最高温度表达式和对应的实验结果。     

Backside-illuminated lateral PIN photodiode for CMOS image sensor on SOS substrate

In this paper, we propose a method to design charge-sensing elements for CMOS image sensor pixels on a silicon-on-sapphire (SOS) substrate. To address the low quantum efficiency problem due to very thin active film used, a backside illuminated lateral PIN photodiode on an SOS substrate is proposed and developed. It has the advantages of higher photo response with a PIN structure and improved optical transmission with a backside illumination through a transparent sapphire substrate. An active pixel sensor (APS) based on the PIN and backside illumination has been implemented in a commercially available SOS CMOS process. Acceptable sensitivity in optical conversion from the APS can be achieved, even with the ultrathin silicon film. The APS is demonstrated to function at 1.2 V, giving a dynamic range of 51 dB.     

Integrated PINFET optical receiver with high-frequency InP-MISFET

Monolithic integration of an InGaAsP PIN photodiode with an n-channel enhancement InP-MISFET is reported. Photo-current amplification characteristics at 1000 Mbit/s have been achieved.     

Study and fabrication of PIN photodiode by using ZnSe/PS/Sistructure

In this experiment, the PIN photodiode by using ZnSe/porous Si/Si structure was investigated. The single crystal ZnSe epilayer is successfully grown on porous silicon substrate with CVD system. Indium is as a dopant to reduce the resistivity of ZnSe intrinsic layer. To control the different thickness of n-ZnSe layer will change the photocurrent and responsivity of the ZnSe PIN diode. The best diffusion conditions are diffusion temperature of 300°C and driving time of 30 min. The responsivity of device is 0.03 A/W. In addition, the dark current of the photodiode is near zero     

Development of an integrated high speed silicon PIN photodiodesensor

A silicon integrated PIN photodiode sensor, combined with a bipolar IC on same substrate (that is, a PIN photo integrated circuit sensor: PIN-PICS), was developed by employing a high resistive P^-- epitaxial layer on a P⁺ substrate for creating a high speed and high optical responsivity PIN photodiode. We fabricated this device based on two special techniques: (1) the PIN photodiode is formed on a P^--/P⁺ substrate structure and isolated from bipolar components by the combination of a P^--well and a trench isolation, and (2) bipolar components are formed by the doubly diffused buried layer of the P^--well and the N⁺ collector wall. All of these components, such as npn and pnp transistors, were arranged within the lightly doped P^--well regions. From several kinds of trial samples, the following results were obtained. The PIN photodiode with 0.145 mm² active area indicated 680 MHz for cutoff frequency at 10 V bias with 830 mn radiation. In the case of 20 V bias, this value exceeded 1.5 GHz. This PIN-PICS was applied to a 10 Mbit/s burst mode compatible optical monolithic receiver and a transimpedance amplifier, and it has shown the expected results     

可见光通信系统中硅光电池响应特性研究

提出了一种普通室内照明条件下光能量和光信号无线复用传输的可见光通信(VLC)方式。与传统的VLC不同,采用Si光电池阵列替代Si光电二极管(PIN)和雪崩二极管(APD)做VLC接收机探测器,在进行可见光数据通信的同时,接收的光能量转换为电能给锂电池充电。基于载流子输运模型分析了环境光照度与Si光电池阵列光电响应速度的关系,通过实验测试验证了普通室内照明条件下Si光电池的响应特性和输出电压特性。研究结果表明,随着光照度的增加,Si光电池阵列输出电压和响应速度均增加,当探测器距离LED光源1.8m、照度为380lx时,通过优化设计放大电路,探测器响应速度可达300kHz,输出电压可达2.8V,满足信号探测和升压型电池充电电路的要求。     

非晶硅集成型色敏元件及其传感器

研究了一种新型的非晶硅ＰＩＮ异质结集成型色敏元件及其传感器的制备工艺和结构，详细讨论了色敏元件的优化设计以及响应特性、暗电流等性能。