共查询到20条相似文献,搜索用时 156 毫秒
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金属外壳引线键合可靠性研究 总被引:1,自引:0,他引:1
引线键合以工艺简单、成本低廉、适合多种封装形式的优势,在连接方式中占主导地位。其中把内部电路与金属外壳内引线柱之间的连接称为引线键合,目前90%以上的封装管脚采用引线键合连接。引线键合强度和可靠性不仅与键合工艺有关(比如键合工艺参数、键合设备、操作技能等因素),而且与外壳引线的镀覆结构、镀层厚度、内引线柱高度等因素密切相关。文章简要介绍了引线键合工艺的基本原理,通过试验分析并比较了金属外壳镀覆结构、镀层厚度、内引线柱高度对键合可靠性的影响,提出了优化键合可靠性的外壳设计原则。 相似文献
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Jack Zhao James Getty 《电子工业专用设备》2005,34(11):44-48
当今的封装工程师们正面临许多挑战,包括降低封装成本策略、成品率提高工艺过程以及错综复杂的无损伤处理、小尺寸器件如多芯片模块、叠层封装和混合电路封装等。为了确保更高的器件可靠性和最小的制造成本,一种经过充分处理的表面因其能够显著提高键合质量和可靠性而成功地在先进封装的引线键合中扮演了重要角色。气体等离子技术能够用于在引线键合前清洗焊盘以改进键合强度和成品率。这是进行表面处理的一种十分有效的方法,它能够显著地改进制造能力、可靠性以及先进封装的成品率。主要讨论了在引线键合前表面处理采用的等离子体的类型及其相关的一些考虑,并评论了实验结果和环氧树脂排放污染的实例细节及有关衬底材料和器件特性。 相似文献
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引线键合技术的现状和发展趋势 总被引:10,自引:4,他引:10
何田 《电子工业专用设备》2004,33(10):12-14,77
作为目前和可预见的将来半导体封装内部连接的主流方式,引线键合技术不断变化以适应各种半导体封装新工艺和材料的要求和挑战。以引线键合设备为中心,全面深入地综述了引线键合技术在引线间距(键合精度)、生产效率(键合速度)、键合质量与可靠性(超声焊接、熔球过程及线弧形状的精确控制)等方面的当前状况。同时也总结了铜互联材料、低介电常数材料、有机(柔性)基底材料、多芯片模块(MCM)和层叠芯片(stackeddie)等半导体封装新趋向对引线键合技术的影响。在此基础上对引线键合技术在未来中长期的发展趋势进行了展望。 相似文献
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陶瓷四边引线扁平外壳设计中的几个问题 总被引:1,自引:1,他引:0
陶瓷四边引线扁平外壳由于其具有I/O端子数多、重量轻、体积小、表贴式的特点,可 较好地满足集成电路芯片高可靠性封装要求。文章叙述了CQFP陶瓷四边引线扁平外壳设计中应注意的 一些问题。如对产品结构、内引线键合指、外引线外形、互连孔位置等关键技术工艺进行周密设计,才 能保证产品的质量。 相似文献
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超导量子比特因其半导体工艺兼容性强,可扩展潜力大,易于操控、读出与耦合,是现阶段最有希望实现可扩展通用量子计算机的技术路线之一。然而,通用量子计算的实现需要百万量级的超导量子比特作为硬件基础,因此相应的封装架构需要在可扩展特性、超导材料体系、低损耗电互连、量子比特兼容性、电磁环境优化等方面进行新的探索。分析了传统引线键合在大规模集成过程中遇到的主要技术瓶颈;介绍了面向超导量子器件开发的一系列特殊互连架构,对其优势和局限性进行了探讨;详细讨论了集成电路领域先进封装技术在超导量子器件中的兼容性问题,主要涵盖倒装键合、硅通孔及系统集成方案3个方面,并对上述封装技术的发展趋势进行了展望。 相似文献
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周德俭 《中国电子科学研究院学报》2013,(6):563-567
电气互联技术是电子产品先进制造技术的典型技术,具有机电结合技术综合度高的特点.电气互联技术已经由以表面组装技术(SMT)、微组装技术、立体组装技术和高密度组装技术等技术为标志的发展时期,逐步进入了以光电互联技术、结构功能构件互联技术等为标志的新技术发展时期,其特征是技术综合度更高、机电关联性更强、互联工艺难度更大、对电子装备系统性能和功能的影响更为直接.简介了电气互联技术及其光电互联、结构功能构件互联新技术的基本概念和发展动态. 相似文献
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Wire bonding is one of the main processes of the LED packaging which provides electrical interconnection between the LED chip and lead frame. The gold wire bonding process has been widely used in LED packaging industry currently. However, due to the high cost of gold wire, copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving. In this paper, the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation. This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging. 相似文献
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金丝楔形键合是一种通过超声振动和键合力协同作用来实现芯片与电路引出互连的技术。现今,此引线键合技术是微电子封装领域最重要、应用最广泛的技术之一。引线键合互连的质量是影响红外探测器组件可靠性和可信性的重要因素。基于红外探测器组件,对金丝楔形键合强度的多维影响因素进行探究。从键合焊盘质量和金丝楔焊焊点形貌对键合强度的影响入手,开展了超声功率、键合压力及键合时间对金丝楔形键合强度的影响研究。根据金丝楔焊原理及工艺过程,选取红外探测器组件进行强度影响规律试验及分析,指导实际金丝楔焊工艺,并对最佳工艺参数下的金丝键合拉力均匀性进行探究,验证了金丝楔形键合强度工艺一致性。 相似文献
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Wire bonding is the predominant mode of interconnection in electronic packaging. Gold wire bonding has been refined again and again to retain control of interconnect technology due to its ease of workability and years of reliability data. Economic realities are now enabling fine diameter copper wire to compete with gold wire. It needs to be demonstrated however that known challenges in the assembly process and long term reliability can be managed successfully. Here, a rigorous methodology has been established to introduce copper wire bonding on new as well as converted dice into manufacturing. Manufacturing efficiencies and yields have been driven to be equivalent to gold wires. Reliability testing has passed the usual criteria and has been extended to demonstrate the viability of this technology. Interfacial analysis has confirmed the observations that intermetallic compounds form and grow slowly. 相似文献
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为了提高微波组件金丝键合的可靠性,采用楔形金丝键合工艺进行了金丝互连,通过田口试验方法设计
和试验验证,确定了金丝键合最优化的工艺参数组合。研究结果表明:键合金丝质量的影响因素依次是超声功率、键
合压力和键合时间,优化的工艺参数组合依次为超声功率、键合压力、键合时间,优化的工艺参数组合为超声功率
15、键合压力16、键合时间50;采用优化后的工艺参数进行金丝键合操作,获得了稳定性良好的互连金丝,完全满
足混合集成微波电路金丝键合互连应用的需求。 相似文献
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Development of gold to gold interconnection flip chip bonding for chip on suspension assemblies 总被引:1,自引:0,他引:1
Gold to gold interconnection (GGI) flip chip bonding technology has been developed to bond the drive IC chip on the integrated circuit suspension used in hard disk drives. GGI is a lead free process where the Au bumps and Au bond pads are joined together by heat and ultrasonic power under a pressure head. The use of GGI flip chip assembly process will help to eliminate equipment parts and processing steps of the traditional flip chip C4 process and hence shortens the overall cycle time. With the integrated circuit suspension design, it becomes possible to assemble the drive IC chip close next to the magneto-resistive head slider on the suspension.This paper describes a flip chip bonding method joining the drive IC chip on integrated circuit suspension with GGI bonding. The reliability evaluations are concentrated on thermo-mechanical analysis, robustness and functional performance of the final assembly. GGI bonding for chip on suspension application is still relatively new and has not been achieved for volume use. Work is still being done to establish and extend the limits of the technology with regard to long term reliability. 相似文献
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Wire bonding is one of the main processes of the LED packaging which provides electrical interconnection between the LED chip and lead frame.The gold wire bonding process has been widely used in LED packaging industry currently.However,due to the high cost of gold wire,copper wire bonding is a good substitute for the gold wire bonding which can lead to significant cost saving.In this paper,the copper and gold wire bonding processes on the high power LED chip are compared and analyzed with finite element simulation.This modeling work may provide guidelines for the parameter optimization of copper wire bonding process on the high power LED packaging. 相似文献
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功率集成器件在交流转直流(AC/DC)电源转换IC、高压栅驱动IC、LED驱动IC等领域均有着广泛的应用.介绍了典型的可集成功率高压器件,包括不同电压等级的横向双扩散金属氧化物半导体场效应晶体管(LDMOS)以及基于硅和SOI材料的横向绝缘栅双极型晶体管(LIGBT),此外还介绍了高低压器件集成的BCD工艺和其他的功率... 相似文献
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The yield of IC assembly manufacturing is dependent on wire bonding. Recently, the semiconductor industry demands smaller IC designs and higher performance requirements. As such, bonding wires must be stronger, finer, and more solid. The cost of gold is continuously appreciating, and this has become a key issue in IC assembly and design. Copper wire bonding is an alternative solution to this problem. It is expected to be superior over Au wires in terms of cost, quality, and fine-pitch bonding pad design. To obtain the best wire bonding quality, we employed Taguchi methods in optimizing the Cu wire bonding process. With Cu wire bonding technology, the production yield increased from 98.5% to 99.3% and brought approximately USD 0.7 million in savings. 相似文献