共查询到17条相似文献,搜索用时 125 毫秒
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设计了一种X频段基于双脊波导WRD650的大功率谐波吸收滤波器,采用双脊波导到单脊波导的渐变过渡结构,利用壁漏式结构,在脊波导宽边开孔,外接次波导谐波吸收腔;利用等效集总电路分析其设计原理,依据设计原理计算出模型初始尺寸,并在HFSS软件中建模优化。按照仿真结果加工实物,利用矢量网络分析仪对其散射参数进行测量。结果表明,该滤波器回波损耗均大于11 dB,通带插损均小于1 dB,阻带隔离均大于20 dB。 相似文献
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针对传统脊波导滤波器设计中没有考虑耦合结构频率特性导致设计精度不高的问题,文中提出了一种基于消失模耦合的脊波导滤波器设计方法。该方法将工作于消失模状态下的矩形波导结构等效为频变阻抗变换器模型,通过等效电路变换将耦合结构的频变特性影响转换为对传输线谐振腔电抗斜率参数的影响,采用逐级仿真策略确定滤波器结构尺寸,避免了耗时的全波仿真优化。最后,通过一个4阶切比雪夫特性的脊波导滤波器设计实例进行验证。全波仿真结果显示了与理论设计相同的通带内等波纹特性,验证了所提方法的有效性。 相似文献
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提出用时域有限差分(FDTD)法分析窄边双脊波导主模的单模带宽。通过对宽边双脊波导带宽的分析及与相关文献报道结果的比较验证了FDTD方法分析波导带宽问题的有效性;用FDTD方法计算了脊位置、脊宽及脊高变化对窄边双脊波导主模带宽的影响,计算结果表明:与传统的双脊波导相比,窄边双脊波导减少了单模带宽,可用作脊带宽滤波器。 相似文献
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本文设计了一种新型脊波导宽带滤波器。实现了中心频率5 GHz相对带宽60%通带内回波小于-20 dB的宽带脊波导滤波器,并通过CST仿真进行优化,达到了设计目的。此类滤波器加工方便,应用低温共熔陶瓷技术可实现集成化。 相似文献
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针对脊波导器件在生产、装配及使用中可能产生的变形,采用有限元法研究了错位变形和受力变形对矩形单脊波导衰减特性、功率容量和阻抗特性的影响。数值分析结果表明:随着脊波导变形程度的增大,衰减常数增大,功率容量和特性阻抗减小,其中下侧受力变形对矩形单脊波导的特性参数影响最大,因此在波导器件的使用过程中应尽量避免下侧受力变形。 相似文献
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脊加载椭圆波导传输特性的矢量有限元法分析 总被引:1,自引:0,他引:1
采用矢量有限元法对脊加载椭圆波导的传输特性进行了分析,编程计算了圆形脊、梯形脊和三角形脊分别加载在椭圆短轴和长轴上波导的截止频率.结果表明:脊加栽在椭圆长轴上,大大减小了单模带宽,因此这种结构可作为有效的脊带宽滤波器. 相似文献
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A methodology is presented for the design of small cavity filters, relying entirely on the use of commercial general-purpose design software. Pertinent filter structures comprise resonated segments of ridge waveguide with evanescent-mode inter-resonator coupling sections, supplemented by impedance-transforming port networks. The ridge and evanescent-mode waveguide segments combine to form a metal-clad dielectric core made of either a single dielectric or a composite material. A parameterized equivalent-circuit model is used to describe each segment based on numerical three-dimensional electromagnetic field analyses. For a bandpass filter, the technique yields low passband insertion loss, an ultrawide upper stopband region, and excellent power handling. The approach provides the option to fabricate structures at low per-unit cost with the help of newly available moldable dielectric materials. The efficacy of the technique is demonstrated with an experimental 1-1.45-GHz bandpass filter. 相似文献
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S.T. Chu M. Miura Y. Kokubun 《Photonics Technology Letters, IEEE》1996,8(11):1492-1494
Compact wavelength filter utilizing the vertical coupling between a conventional ridge waveguide and a 3-D ARROW is proposed and demonstrated. Compact size and narrowband performance are achieved utilizing the large difference of waveguide dispersion between the 3-D ARROW and the ridge waveguide at single mode. A polyimide ridge waveguide was stacked on a stripe lateral confinement ARROW in an intersecting configuration with the interaction length of about 1 mm, and -3-dB linewidth of 5.5 nm was experimentally achieved. 相似文献
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Yu Rong Zaki K.A. Hageman M. Stevens D. Gipprich J. 《Microwave Theory and Techniques》1999,47(12):2317-2324
Full-wave mode-matching-based design of generalized ridge waveguide evanescent mode bandpass filters and their transitions for low-temperature cofired ceramic (LTCC) application is described. A modification factor is introduced in the prototype filter design to effectively overcome the filter bandwidth distortion. Design examples are given to demonstrate the validity. An S-band single-ridge waveguide filter and its transitions are simulated and successfully built in LTCC packages. Good agreement between the theory and experiment is obtained, which demonstrates the feasibility of the three-dimensional ridge waveguide filter embedding in LTCC packages. As compared with an LTCC inductive windows waveguide filter realization, the ridge waveguide filter realization shows significant advantages of smaller size and comparable loss. Design consideration and LTCC realization of the low-loss ridge waveguide filter are also provided 相似文献
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通过优化脊形波导的结构参数可以降低脊形波导激光器的阈值电流,提出了实现亚微米脊宽,从而降低阈值电流的方法。针对脊形波导制作过程中蚀刻深度不易控制的问题,对GaInP/AlGaInP材料中加入蚀刻阻挡层进行了研究。 相似文献
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A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐mode operation without kinks or beam‐steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA. 相似文献