Investigation of non-aqueous electrodeposited CdS/Cd1−xZnxTe heterojunction solar cells

Polycrystalline Cd_1−xZn_xTe solar cells with efficiency of 8.3% were grown by cathodic electrodeposition on glass/ITO/CdS substrates using non-aqueous ethylene glycol bath. The deposit is characterised versus the process conditions by XRD and found to possess a preferred (1 1 1) orientation on Sb doping in the electroplating bath. The surface morphology of the deposit is studied using atomic force microscope. The average RMS roughness for the ternary film was higher than that for the binary CdTe. Optical properties of the films were carried out to study the band gap and calculation of molar concentration ‘x’. The effects of Sb doping in CdS/Cd_1−xZn_xTe heterojunctions have been studied. The short circuit current density (c) was found to improve and series resistance (R_s) reduced drastically upon Sb doping. This improvement in J_sc is attributed to an increase in quantum efficiency. The evaluation of solar cell parameters was also carried out using the current–voltage characteristics in dark and illumination. The best results were obtained when 2×10⁻³ M ZnCl₂ along with antimony were present in the deposition bath. Under AM 1.5 conditions the open circuit voltage, short circuit current density, and fill factor of our best cell were V_oc=600 mV, J_sc=26.66 mA/cm², FF=0.42 and efficiency, η=8.3%. The carrier concentration and built-in potential of Cd_1−xZn_xTe calculated from Mott–Schottky plot was 2.72×10¹⁷ cm⁻³ and 1.02 eV.     

Calculation of band offsets at the CdS/SnS heterojunction

SnS is a promising material for heterojunction solar cells, but the energy band alignment is not known for SnS-based heterojunctions. In this study, the energy band offset at the CdS/SnS heterojunction is calculated using the first principle, density-functional, pseudopotential method. A procedure analogous to that used in the core-level photoemission spectroscopy is adopted to calculate the band offset. The 4d core-level difference between Cd and Sn was estimated from the energy calculation of a superstructure consisting of zincblende CdS and rock-salt or zincblende SnS. The calculated valence-band offset is 0.1 eV when the rock-salt SnS is assumed and 0.84 eV when the zincblende SnS is assumed.     

Initial results of CdS/CuInTe2 heterojunction formed by flash evaporation

The CuInTe₂ thin films is one of the most attractive semiconductors for solar cells applications, since its direct band gap energy (Eg≈1 eV) is suitable as an absorber in photovoltaic conversion. In this letter the CuInTe₂ thin films are prepared by flash evaporation technique. X-ray diffraction measurements on the as-deposited CuInTe₂ film showed that these films consist mainly of the chalcopyrite phase. The junction formation in the n-CdS/p-CuInTe₂ cell has been investigated using current–voltage (I–V) and capacitance-voltage (C–V) measurements.     

Can we improve the record efficiency of CdS/CdTe solar cells?

Polycrystalline thin film CdTe continues to be a leading material for the development of cost effective and reliable photovoltaic systems. The two key properties of this material are its near ideal band gap for photovoltaic conversion efficiency of 1.45 eV, and its high optical absorption coefficient. Thin film CdTe solar cells are typically hetero-junctions with CdS being the n-type partner, or window layer. Efficiencies as high as 16.5% have been achieved.In this paper we make a physical analysis of the typical CdS/CdTe superstrate solar cell, and we show that present record efficiencies are very close to the practical efficiency limit for a CdS/CdTe hetero-junction cell. We show that a current estimate for the maximum efficiency of hetero-junction CdS/CdTe solar cells is around 17.5%, in contrast to old theoretical predictions, which calculate about 30% efficiencies for ideal homo-junction CdTe solar cells. This analysis explains why the record efficiency for this kind of cells has been stable for the last 10 years, going up by less than 1% from 15.8% to only 16.5%.     

Determination of photo-active region in organic thin film solar cells with an organic heterojunction

The photo-active region in the solar cells consisting of Cu-phthalocyanine (CuPc) and perylene-derivative (PV) layers was determined by using exciton blocking layers (EBLs) inserted in these layers. The photocurrent density was low when the EBL was placed near the CuPc/PV interface. With the increase of the distance between the EBL and the CuPc/PV interface, the photocurrent increased. However, when the distance reached a certain value, it leveled off owing to the limited diffusion length of excitons. From the analysis of the relationship between the position of EBL and the photocurrent density, the photo-active regions in the CuPc and PV layers were estimated to be 8 and 12 nm thick from the interface, respectively.     

Chemical stability of sputtered Mo/Sb2Te3 and Ni/Sb2Te3 layers in view of stable back contacts for CdTe/CdS thin film solar cells

Sb–Te phases sputtered from an Sb₂Te₃/Sb/Te target in a substrate temperature range from 293 to 523 K are characterised by X-ray diffraction (XRD) and Hall measurements. A simple thermodynamic model is introduced for estimating the chemical stability of the Ni/Sb₂Te₃ and the Mo/Sb₂Te₃ interface. These data and the results of kinetic test reactions for sputtered Ni/Sb₂Te₃, Ni/Sb–Te, Mo/Sb₂Te₃ and Mo/Sb–Te layers are compared using XRD measurements. Metal/Sb₂Te₃ thin film double-layer systems are used as a model for an innovative back contact for CdTe/CdS thin film solar cells offering an improved long-term stability.     

Enhancement of photovoltaic characteristics using a PEDOT interlayer in TiO2/MEHPPV heterojunction devices

The effect of inserting a PEDOT interlayer between the MEHPPV layer and the Au electrode of a nanocrystalline ITO/TiO₂/MEHPPV/Au heterojunction device on the photovoltaic characteristics of the device has been studied. The MEHPPV layer has both a light-sensitizing role and a hole-transporting function. The overall conversion efficiency of the device with a PEDOT layer is better by more than 80% than that obtainable without a PEDOT layer. The modified device shows improved photocurrent density–voltage (J–V) characteristics, in that there is a strong reduction of the roll-over behavior in the forward bias region, and an increase in the fill factor. These improvements are due to the reduction of junction resistance across the MEHPPV/Au interface in the presence of the PEDOT interlayer, which results in improved hole injection.     

Photocarrier generation in organic thin-film solar cells with an organic heterojunction

Photocurrent–voltage characteristics for organic solar cells with a heterojunction formed between copper phthalocyanine and a perylene derivative (or C₆₀) were studied. The photocurrent was observed under both reverse and forward biases. From the analysis of the photocurrent action spectra, the origin of the reverse photocurrent was attributed to the excitons formed in both the organic layers, whereas that of the forward photocurrent was attributed to the excitons formed in the perylene derivative (or C₆₀) layer. The photocurrent density under reverse bias increased at higher temperatures, suggesting that the charge recombination possibility was lowered at higher temperatures. On the basis of the time responses of the photocurrents observed after pulsed photoirradiation, the charge separation and transport processes are discussed.     

In-situ constructing cobalt incorporated nitrogen-doped carbon/CdS heterojunction with efficient interfacial charge transfer for photocatalytic hydrogen evolution

Designing an efficient heterojunction interface is an effective way to promote the electrons' transfer and improve the photocatalytic H₂ evolution performance. In this work, a novel hollow hybrid system of Co@NC/CdS has been fabricated and constructed. CdS nanospheres are anchored on the hollow-structured cobalt incorporated nitrogen-doped carbon (Co@NC) through a one-pot in-situ chemical deposition approach, forming an intimate interface and establishing an excellent channel to improve the electrons transfer and charge carriers separation between CdS and Co@NC cocatalyst, which immensely promotes the photocatalytic activity. The rate of photocatalytic H₂ evolution over hollow structured Co@NC/CdS heterojunction can be achieved 8.2 mmol g^?1 h^?1, which is about 45 times of pristine CdS nanospheres. The photocatalytic H₂ evolution mechanism has been investigated by the techniques of photoluminescence (PL) spectra, photocurrent-time (i-t) curves, electrochemical impedance spectroscopy (EIS) etc. This work aims to provide a new way in developing of high-performance advanced 3D heterojunction for photocatalytic hydrogen evolution.     

Chemical insights into the Cd/NH3 treatment—An approach to explain the formation of Cd-compounds on Cu(In,Ga)(S,Se)2 absorbers

When replacing the generally used CdS-buffer in chalcopyrite-based solar cells by an ILGAR-ZnO layer, the absorber has to be pre-treated in a Cd²⁺/NH₃-containing solution in order to yield high efficiency devices. The purpose of this article is to explain the observed formation of Cd-compounds on top of the Cd²⁺/NH₃-treated Cu(In,Ga)(S,Se)₂ absorber surface. Within this framework, results from X-ray-based electron spectroscopies of the modified absorber surfaces and an X-ray diffraction and UV–Vis investigation of the film formed at the surface of the treatment solution are discussed.     

CF4/O2 dry etching of textured crystalline silicon surface in a-Si:H/c-Si heterojunction for photovoltaic applications

We investigated a dry cleaning procedure of the crystalline substrate, both mono- and multi crystalline silicon, to leave an uncontaminated surface using an etching process involving CF₄/O₂ mixture. A detailed investigation was performed to find compatibility and optimisation of amorphous layer depositions both on flat and textured silicon by changing the plasma process parameters. We found evidence that plasma etching acts by removing the native oxide and the damages of textured silicon and by leaving an active layer on silicon surface suitable for the emitter deposition. SEM analysis confirmed that it is possible to find plasma process conditions where no appreciable damages and change in surface morphology are induced. By using this process we achieved on amorphous crystalline heterostructure a photovoltaic conversion efficiency of 13% on 51 cm² and 14.5% on 1.26 cm² active area. We also investigated compatibility of the process with industrial production of large area devices.     

Amorphous silicon/p-type crystalline silicon heterojunction solar cells with a microcrystalline silicon buffer layer

Undoped hydrogenated amorphous silicon (a-Si:H)/p-type crystalline silicon (c-Si) structures with and without a microcrystalline silicon (μc-Si) buffer layer have been investigated as a potential low-cost heterojunction (HJ) solar cell. Unlike the conventional HJ silicon solar cell with a highly doped window layer, the undoped a-Si:H emitter was photovoltaically active, and a thicker emitter layer was proven to be advantageous for more light absorption, as long as the carriers generated in the layer are effectively collected at the junction. In addition, without using heavy doping and transparent front contacts, the solar cell exhibited a fill factor comparable to the conventional HJ silicon solar cell. The optimized configuration consisted of an undoped a-Si:H emitter layer (700 Å), providing an excellent light absorption and defect passivation, and a thin μc-Si buffer layer (200 Å), providing an improved carrier collection by lowering barrier height at the interface, resulting in a maximum conversion efficiency of 10% without an anti-reflective coating.     

Fabrication of rGO/CdS@2H, 1T,amorphous MoS2 heterostructure for enhanced photocatalytic and electrocatalytic activity

The synthesis of high efficiency noble metal free catalysts is an important target for H₂ production by water-splitting. In this work, rGO/CdS@MoS₂ heterostructure with two catalytic paths was successfully synthesized and as the first applied the heterostructure in the field of electrocatalysis. The MoS₂ structure is adjusted by controlling hydrothermal process. Moreover, the effects of structure and loading amount of 2H–MoS₂, 1T-MoS₂ and amorphous MoS₂ (A-MoS₂) on catalytic performance were also studied. The catalytic activity of rGO/CdS@MoS₂ heterostructure has been improved obviously. Compared with 2H–MoS₂, the distortion of 1T-MoS₂ and the defect of A-MoS₂ make it have more unsaturated S, so rGO/CdS@1T-MoS₂ and rGO/CdS@A-MoS₂ have better catalytic activity. For photocatalytic H₂ evolution, loading MoS₂ and rGO on catalysts changes the energy band structure, promotes the separation of electron-holes and provides a large number of active sites. Among them, the visible light photocatalytic H₂ production rate of rGO/CdS@1T-MoS₂ with 0.1 mol of 1T-MoS₂ (CT0.1-G1) is 18.26 mmol/g/h. During the electrocatalytic H₂ evolution, introducing MoS₂ and rGO improves electronic structure and increases active sites. rGO/CdS@1T-MoS₂ with 0.5 mol of 1T-MoS₂ (CT0.5-G1) shows the low overpotential (312 mV) and Tafel slopes (85 mV/dec).     

Effect of sodium addition on Cu-deficient CuIn1−xGaxS2 thin film solar cells

Chalcopyrites are important contenders among solar-cell materials due to direct band gap and very high-absorption coefficients. Copper-indium-gallium disulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of 1.5 eV for terrestrial as well as space applications. At FSEC PV Materials Laboratory, record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 thin film prepared by sulfurization. There are reports of influence of sodium on copper-indium-gallium selenide (CIGS) as well as copper-indium disulfide (CIS2) solar cells. However, this is the first of its kind approach to study the effect of sodium on CIGS2 solar cells and resulting in encouraging efficiencies. Copper-deficient CIGS2 thin films were prepared with and without the addition of sodium fluoride (NaF). Effects of addition of NaF on the microstructure and device electrical properties are presented in this work.     

Epitaxial n-Si/p-CuInS2 heterojunction devices

We present and characterize the first epitaxial Si/CuInS₂ heterojunction devices. By means of molecular beam epitaxy (MBE), slightly copper-rich CuInS₂ epilayers are deposited on sulphur-terminated Si-(1 1 1) surfaces of n-type wafers. Both the quality of the substrate and the deposited epilayer are controlled in situ using low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) and various other methods including transmission electron microscopy (TEM) are applied in the ex situ structural characterization. The heterojunction diodes are completed by the deposition of an indium-tin oxide (ITO) layer and of metallic contacts. Their electronic and structural properties are discussed.     

Fabricating CdS/BiVO4 and BiVO4/CdS heterostructured film photoelectrodes for photoelectrochemical applications

The photoelectrochemical (PEC) properties of heterostructured CdS/BiVO₄ and BiVO₄/CdS film electrodes on conducting glass for hydrogen production under visible light were investigated. These two types heterostructured film electrodes were prepared using spin coating method and ultrasonic spray pyrolysis method. The structural analyses of the prepared films were determined by using XRD, SEM, EDX and UV–vis. Photoelectrochemical measurements were carried out in a convenient three electrodes cell with 0.5 M Na₂SO₃ aqueous solution. In order to investigate band gap influence of electrode PEC property, a series ITO/Cd_1−xZn_xS/BiVO₄ and ITO/BiVO₄/Cd_1−xZn_xS (x = 0 ∼ 1) film electrodes were also synthesized. After PEC test, a maximum photocurrent density from ITO/CdS/BiVO₄ film electrode was confirmed. The maximum photocurrent density, 3 times and 113 times as that of single CdS film electrode and single BiVO₄ film electrode, respectively. Incident photon to current conversion (IPCE) of as prepared film electrodes were measured and the value were 65% (ITO/CdS/BiVO₄), 22% (single CdS film) and 10% (ITO/BiVO₄/CdS) at 480 nm with 0.3 V external bias. Comparison with ITO/BiVO₄/CdS electrode and single Cd_1−xZn_xS electrodes, the heterostructured ITO/CdS/BiVO₄ electrode can effectively suppress photogenerated electron-hole recombination and enhance light harvesting. Therefore, the ITO/CdS/BiVO₄ electrode gave the maximum photocurrent density and IPCE value.     

Fabrication and characterisation of Si micropillar PV structures

Abstract

Arrays of vertical silicon micropillar radial junction solar cells have been fabricated by diffusion of direct application spin on dopant and from the vapour phase through proximity rapid thermal diffusion. The micropillars were fabricated by optical lithography and deep reactive ion etching. The micropillar arrays show superior antireflective properties over the measured spectrum and good correlation to finite difference time domain modelling of identical geometry arrays. Junctions formed by a conventional spin on doping process of phosphorus containing dopant solution produced Suns-V_oc values in the region of 0·3 V. This value is likely due to difficulties encountered in achieving an even distribution of dopant over the entire surface of the arrays. An alternative method utilising spin on dopant but employing an intermediate vapour phase diffusion step produced promising results with Suns-V_oc values reaching 0·5 V following a post-diffusion drive-in step.     

A thin-film solar cell of high-quality -FeSi2/Si heterojunction prepared by sputtering

High-quality (1 1 0)/(1 0 1)-oriented epitaxial β-FeSi₂ films were fabricated on Si (1 1 1) substrate by the sputtering method. The critical feature was the formation of a high-quality thin β-FeSi₂ template buffer layer on Si (1 1 1) substrate at low temperature. It was demonstrated that the template is very important for the epitaxial growth of thick β-FeSi₂ films and for the blocking of Fe diffusion into the Si at the β-FeSi₂/Si interface. Hall effect measurements for β-FeSi₂ films showed n-type conductivity, with residual electron concentration around 2.0 × 10¹⁷ cm⁻³ and mobility of 50–400 cm²/V s. A prototype thin-film solar cell was fabricated by depositing n-β-FeSi₂ on p-Si (1 1 1). Under 100 mW/cm² sunlight, an energy conversion efficiency of 3.7%, with an open-circuit voltage of 0.45 V, a short-circuit current density of 14.8 mA/cm² and a fill factor of 0.55, was obtained.     

Thin film silicon solar cells for space applications: Study of proton irradiation and thermal annealing effects on the characteristics of solar cells and individual layers

The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). The effect of subsequent thermal annealing on solar cells degraded by proton irradiation is investigated. A low-temperature annealing behaviour can be observed (at temperatures around 100 to 160°C) for microcrystalline silicon solar cells. To further explore this effect, a second proton irradiation campaign has been carried out, but this time on microcrystalline silicon layers. The effect of proton irradiation and subsequent thermal annealing on the optical and electronic properties of microcrystalline silicon is, thus, thoroughly investigated.     

Effect of hydrogen dilution on intrinsic a-Si:H layer between emitter and Si wafer in silicon heterojunction solar cell

In silicon heterojunction solar cells, a thin intrinsic amorphous-silicon (a-Si:H) buffer layer between a doped emitter and a c-Si wafer is essential to minimize carrier recombination. This study examines the effect of H₂ dilution on the properties of the intrinsic a-Si:H layers deposited on Si wafers by plasma-enhanced chemical vapor deposition. A H₂/SiH₄ ratio of 24 led to improvements in the quality of intrinsic a-Si:H films and in the performance of passivation compared to a-Si:H film without H₂ dilution. A high H₂-dilution ratio, however, degraded the passivation of the a-Si:H film. The Si heterojunction solar cells with an optimal intrinsic a-Si:H layer showed an efficiency of 12.3%.