机场天气雷达双通道数字中频处理系统的实现

机场天气雷达要求能够从复杂的天气环境中识别不同的天气状况以保障航空飞行安全,其接收机大动态以及抗噪性能设计对雷达至关重要。在分析模数转换器（ADC）对雷达中频接收机动态范围制约的基础上,根据中频带通采样和数字下变频的原理,实现了基于现场可编程门阵列的双通道ADC采样数字中频处理系统,并给出了系统的设计原理、方法以及测试结果。通过对双通道ADC采样的数字中频处理系统的实现,能够很好地提高天气雷达接收机的动态范围,并应用于机场多普勒天气雷达数字中频接收机。     

移相型三厘米波段镜像抑制混频器

<正>镜像抑制混频器是通讯和其它电子系统中不可缺少的部件之一.一般达到镜像抑制的方法有两种,在混频器信号输入端设置带通滤波器(或带阻滤波器);另一种是在混频器设计中利用相位关系来区分中频输出是真正射频或镜频干扰信号,使有用中频信号输入到接收机,而镜像信号产生的干扰信号消耗或反射在匹配负载上.前者设计较简单,仅适用于高中频系统;但对工作频带较宽、频率捷变和低中频接收机系统就不适用.因此就只能采用后者,亦即移相型双平衡电路结构.     

基于FPGA的数字正交解调与脉冲压缩

中频信号是高频信号经过变频,而获得的一种信号,为了使放大器稳定工作并减小干扰,一般的接收机都要将高频信号变为中频信号。脉冲压缩是现代雷达中重要的信号处理技术之一,可以较好地解决雷达距离分辨力和作用距离之间的矛盾,文章对常见的数字正交解调方法,即数字混频进行了研究,随后对解调后的信号进行了脉冲压缩处理。在Matlab上对这种方法进行了仿真,然后用FPGA进行了硬件实现。     

一种通用中频数字化接收机的实现

为满足雷达中频数字化接收机通用性设计要求,给出基于可编程的四通道教字下变频器ISL5416结合高速A/D器件AD6645实现通用中频数字接收机的设计方案.利用AD6645实现直接中频采样,在ISL5416中完成频谱搬移,数字滤波和抽取,实现数字下变频到基带;用FPGA实时控制,给ISL5416配置参数和系统时序控制.详细讨论了数字滤波器的设计和仿真.测试结果显示,系统动态范围大,镜像抑制比高,这是模拟中频接收机不具有的.整个系统集成度高,可靠性好,使用灵活,已在多个雷达产品中运用.     

低中频接收机I/Q不平衡的数字估计和补偿

相对于传统的超外差式接收机,低中频接收机由于不需要镜像抑制滤波器、中频滤波器等片外大体积昂贵器件,因而系统设计可以更加灵活,体积更小,成本更低,集成度更高。低中频接收机采用I/Q下变频进行镜像分离,但模拟前端I/Q不平衡导致的镜像抑制不足问题却是其一大缺点。本文提出了一种利用测试信号数字估计和补偿I/Q不平衡的方法来提高镜像抑制能力。仿真结果表明,在幅度不平衡不大于10%和相位不平衡不大于10°时,经补偿后的镜像抑制比能够达到50d B以上。     

适用于不同相参体制的雷达数字中频接收机

介绍了一种功能完备的雷达数字中频接收机，其具有数字中频处理，数字定相，发射脉冲频谱分析及功率校正，AFC控制等功能。其可用于常规磁控管雷达多普勒改造或提升模拟中频相参多普勒系统性能，也适用于全相参系统接收机中频数字化改造或进一步的性能提升。采用该数字接收机，典型磁控管整机系统的改善因子限制可达40dB以上。该数字接收机性能高，集成度高，适用性广。     

多通道数字接收机的设计与实现

为了解决传统模拟中频接收机相位分辨率低等缺点,提出一种基于软件无线电的中频数字接收机技术。针对雷达信号的特点提出了脉宽匹配滤波器的设计方法。采用基于多相滤波的正交变换理论,以及基于脉宽匹配的数字滤波器方法完成了一种五通道中频数字接收机的设计。接收机利用五路高速A/D变换器对输入的模拟信号进行采样,然后将采样数据送入FPGA进行处理,最终完成了每两路信号相位差的提取。实验结果表明系统具有成本低、精度高、结构简单等特点,而且具有一定的工程应用价值。     

雷达接收机信道对脉冲信号相位谱干扰模型的分析与处理

雷达的接收机信道作为带通滤波器,其内部混有噪声,因此,当用其传输放大脉冲信号时,对脉冲相位谱会产生影响,使脉冲前后沿发生变化。本文分析了雷达信道对脉冲相位谱的干扰模型及影响程度,为消除其影响提供了准确、可靠的理论依据,并提供了处理这类信号的数学模型。     

数字正交分解算法的研究

在软件无线电接收机中,普遍采用了中频数字化方案。中频接收机的输入信号为一个带通模拟信号,在进行信号解调前,必须先对其进行数字化正交处理,即将一个实信号变成两个正交数字序列。根据正交数字序列,可以方便地提取信号瞬时参数,同时在一定程度上能克服因衰落或多普勒频移等因素而导致的信号失真。根据A/D转换器在信号解调时所在位置和信号采样率的确定方式,对传统的基于Nyquist采样定理的模拟下变频法和基于中频带通采样的Hilbert滤波法、数字混频法和多相滤波法进行了研究。     

RF滤波器对DS—CDMA系统性能的影响

在无线通信系统特别是扩频通信系统中,其发射信号必须限定在一定频段,以防它们干扰别人,并遵守一定的无线频率资源管理规定,因而发射机必须用滤波器;同亲,接收机为了克服镜像干扰和带外噪声也分别采用镜像滤波器和中频滤波器,这些滤波器对相关器的输出产生了不同程度的影响。本文主要是分析一些滤波器参数在这些影响中所起的作用,以便选取适当参数的滤波器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.