40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology

An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m.     

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-/spl mu/m wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB/spl middot//spl Omega/. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.     

A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material

The authors report on a high performance monolithic photoreceiver fabricated from chemical beam epitaxy (CBE) grown InP/InGaAs heterostructures, incorporating a p-i-n photodetector followed by a transimpedance preamplifier circuit configured from heterojunction bipolar transistors (HBTs). The optoelectronic integrated circuit (OEIC) was fabricated on a semi-insulating Fe-doped InP substrate. Microwave on-wafer measurements of the frequency response of the transistors yielded unity current gain cutoff frequencies of 32 GHz and maximum oscillation frequencies of 28 GHz for collector currents between 2 and 5 mA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5 mu m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEICs.<>     

A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<>     

InP基PIN HBT光电集成器件的设计与研制

对用于光电集成电路(OEIC)的InP基异质结双极性晶体管(HBT)及PIN探测器进行了设计与研制,讨论了堆叠层结构和共享层结构2种常见的集成方式,通过实验比较,确定了共享层结构器件性能更好,并对此结构进行了改进。所研制的HBT截止频率达到30 GHz,直流增益达到100;PIN的3 dB带宽达到了15 GHz。详细介绍了器件结构及工艺流程。     

Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

Modulator driver and photoreceiver for 20 Gb/s optic-fiber links

Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 μm gate-length AlGaAs-GaAs high-electron mobility transistor (HEMT) technology with a f_T of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V_p-p at each output. The 1.3-1.55 μm wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 kΩ. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V_p.p     

A 3 GHz transimpedance OEIC receiver for 1.3-1.55 μm fiber-opticsystems

A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55-μm-wavelength OEIC receivers     

InP基长波长单片集成光接收前端的设计和制备

叙述了利用InP基长波长pin光探测器和异质结双极晶体管(HBT)单片集成实现光接收前端的设计和制备方法.pin光探测器和HBT采用共享层结构,这样的结构不仅性能优于堆叠层结构,而且制备工艺兼容.制备的HBT截止频率达到30GHz,pin光探测器的3dB带宽达到了15GHz,集成光接收前端的3dB带宽达到3GHz,跨阻放大倍数达到800.     

准平面型InAlAs/InGaAs异质结双极晶体管和单片集成激光器驱动电路

提出和制作了准平面型InAlAs/InGaAs异质结双极晶体管。该管主要采用硅离子注入法在半绝缘磷化铟衬底中形成隐埋型集电区以代替台面型集电区。晶体管的实测结果如下:h_(fe)=100,f_T=10GHz(V_(CE)=3V,I_c=10mA)。作为单片光电集成方面的实例,研制成功了由三个InGaAs/InAlAsHBT和一个电阻组成的激光器驱动电路,其电流调制速率高达4Gbit/s。     

An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Ω, a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth     

A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBTphotoreceiver module for long-wavelength transmission systems

A very high sensitivity, high speed, fiber-pigtailed photoreceiver module is described. The OEIC photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has measured sensitivity of -20 dBm and -17.6 dBm for data rates of 10 and 12 Gb/s, respectively, at a bit error rate of 1×10^-9. These results are the best ever reported for an OEIC photoreceiver at these speeds. In an optical transmission experiment with a low noise erbium-doped fiber amplifier (EDFA) preceding the OEIC photoreceiver, the measured sensitivities were -35.2 and -32 dBm at 10 and 12 Gb/s respectively     

InP基MOCVD及MBE外延生长HBT的制备与分析

设计并研制了用于光电集成(OEIC)的InP基异质结双极晶体管(HBT),介绍了工艺流程及器件结构。分别采用金属有机化学气相沉积(MOCVD)及分子束外延(MBE)生长的外延片,并在外延结构、工艺流程相同的条件下,对两种生长机制的HBT直流及高频参数进行和分析。结果表明,采用MOCVD生长的InP基HBT,直流增益为30倍,截止频率约为38GHz;MBE生长的HBT,直流增益达到100倍,截止频率约为40GHz。这表明,MBE生长的HBT外延层质量更高,在相同光刻条件下,所对应的HBT器件的性能更好。     

27-GHz bandwidth high-speed monolithic integrated optoelectronicphotoreceiver consisting of a waveguide fed photodiode and anInAlAs/InGaAs-HFET traveling wave amplifier

A monolithic integrated photoreceiver for 1.55-μm wavelength has been designed for operation in a 20-Gb/s synchronous digital hierarchy system (SDH/SONET), based on a new integration concept. The optoelectronic integrated circuit (OEIC) receiver combines a waveguide-integrated PIN-photodiode and a traveling wave amplifier in coplanar waveguide layout with four InAlAs/InGaAs/InP-HFETs (0.7-μm gate length). The receiver demonstrates a bandwidth of 27 GHz with a low frequency transimpedance of 40 dBΩ. This is, to our knowledge, the highest bandwidth ever reported for a monolithic integrated photoreceiver on InP. Furthermore, a receiver sensitivity of -12 dBm in the fiber (20 Gb/s, BER=10^-9) and an overall optical input dynamic range of 27 dB is achieved. Optical time domain multiplex (TDM) system experiments of the receiver packaged in a module show an excellently shaped eye pattern for 20 Gb/s and an overall sensitivity of -30.5 dBm (BER=10^-9) [including erbium doped fiber amplifiers (EDFA)]     

GaInAs pin photodiode/GaAs preamplifier photoreceiver forgigabit-rate communications systems using flip-chip bonding techniques

Reports on an integrated photoreceiver using a flip-chip bonding technique. The integrated photoreceiver consists of a back-illuminated GaInAs/InP pin photodiode with a small junction area and a GaAs high-impedance preamplifier having a two-stage amplifier. The quantum efficiency and the cut-off frequency of the pin photodiode were 81% and 19GHz. This photoreceiver exhibited good practical performance characteristics, including a minimum detectable power of -29.8 dBm at 1 Gbit/s, and -26.9 dBm at 2 Gbit/s     

Ultra-wideband monolithic photoreceivers using HBT-compatible HPTswith novel base circuits, and simultaneously integrated with an HBTamplifier

This paper presents two kinds of monolithically integrated ultra-wideband photoreceivers that use HBT-compatible HPTs with novel base circuits. The HPT photoreceiver, which consists of an HPT with an inductor and series resistor base circuit, yields ultra-broadband operation with 3 dB bandwidth from 0.43-12.1 GHz and over 11 dB gain compared to a photodiode with identical quantum efficiency. The HPT/HBT photoreceiver, which consists of an HPT with an inductor at the base terminal followed by an HBT amplifier circuit, yields ultra-wideband operation from 8.5-20.5 GHz (bandwidth of 12 GHz) with over 20 dB gain. The bandwidths of these photoreceivers are state-of-the art for monolithically integrated photoreceivers using HPT/HBT structures. The proposed photoreceivers, which are based on mature MMIC technologies, offer several other remarkable features such as good design accuracy and extremely small chip size     

Wideband HBT circuits for operation above 10 GHz and power supply voltages below 5 V

Single-stage and two-stage differential cascode amplifiers, and a 2:1 multiplexer, fabricated in InP/InGaAs HBT technology and powered from less than 5 V supplies, are presented. The amplifiers have typical DC gains of 21 and 33 dB, respectively, and unity-gain bandwidths in excess of 15 GHz, with approximately 20 dB gain at 10 GHz. The multiplexer was tested at rates up to 20 Gbit/s.<>     

5 V, DC-12 GHz InP/InGaAs HBT amplifier

An InP/InGaAs HBT cascode amplifier operating from a single 5 V power supply is described. The circuit has a DC gain of 17.2 dB and a -3 dB frequency point of 12.3 GHz. This results in a gain-bandwidth product in excess of 90 GHz. The frequency response of the amplifier remains constant if the power supply voltage is as low as 4 V.<>     

InP-InGaAs single HBT technology for photoreceiver OEIC's at 40Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ω/380 Ω and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value     

用于单片集成光接收机前端的GaAs基InP/InGaAs HBT

实现了一种可用于单片集成光接收机前端的GaAs基InP/InGaAs HBT。借助超薄低温InP缓冲层在GaAs衬底上生长出了高质量的InP外延层。在此基础上,只利用超薄低温InP缓冲层技术就在半绝缘GaAs衬底上成功制备出了InP/InGaAsHBT,器件的电流截止频率达到4.4GHz,开启电压0.4V,反向击穿电压大于4V,直流放大倍数约为20。该HBT器件和GaAs基长波长、可调谐InP光探测器单片集成为实现适用于WDM光纤通信系统的高性能、集成化光接收机前端提供了一种新的解决方法。