激光表面熔覆SiCp/Ni-Cr-B-Si-C涂层的组织演化及其相确定

运用激光熔覆技术在ＡＩＳＩ１０４５钢表面制备了３０ｖｏｌ－％ＳｉＣｐ／Ｎｉ－Ｃｒ－Ｂ－Ｓｉ－Ｃ涂层。ＳＥＭ和ＴＥＭ观察分析表明：ＳｉＣｐ在熔覆过程中完全溶解;涂层结合区组织为共晶结构;涂层组织由初生石墨球Ｇ,分布在γ－Ｎｉ固溶体枝晶中的Ｍ２３（Ｃ,Ｂ）６细小网状树枝晶以及少量Ｎｉ＋Ｎｉ３（Ｂ,Ｓｉ）层片状共晶组成;Ｓｉ在Ｎｉ固溶体中的固溶度显著增大,高达１４．４１ｗｔ－％;Ｍ２３（Ｃ,Ｂ）６含有高密度堆垛层错;Ｎｉ３（Ｂ,Ｓｉ）相具有长周期结构。     

激光熔覆WCp/Ni-Cr-B-Si-C自熔合金复合涂层的显微结构及干滑动磨损

运用激光熔覆技术在４５＃钢表面制备了ＷＣｐ增强Ｎｉ－Ｃｒ－Ｂ－Ｓｉ－Ｃ复合涂层。含量为３０ｖｏｌ－％ＷＣ典型涂层的ＸＲＤ,ＳＥＭ和ＴＥＭ分析表明,ＷＣｐ在熔覆的熔化阶段发生部分溶解和分解。激光熔体凝固时形成的微观组织由Ｎｉ＋Ｎｉ３Ｂ共晶基体上分布的杆（或薄片）状α－Ｗ２Ｃ,块状β－Ｗ２Ｃ和四方形η１碳化物Ｍ６Ｃ相组成。这类碳化物主要含Ｗ,并含大量Ｃｒ。销－环式干滑动磨损试验表明,当ＷＣｐ含量约为３０ｖｏｌ－％时,磨损抗力最大     

用化学共沉SrTiO_3研制钛酸锶铋介质陶瓷

采用ＸＲＤ、ＳＥＭ、ＥＤＡＸ、粒度分析等手段研究了在（１－ｘ）ＳｒＴｉＯ３ｘＢｉ２Ｏ３·３ＴｉＯ２（简称ＳＢＴ）系统中采用化学共沉ＳｒＴｉＯ３时，Ｂｉ２Ｏ３·３ＴｉＯ２的含量对介电性能和显微结构的影响。发现当其摩尔分数ｘ小于１０％时，结构为单相固溶体，εｒ随ｘ的增加而增加；当ｘ大于１０％时，为复相结构，εｒ开始下降。这个结果与采用ＳｒＣＯ３和ＴｉＯ２固相合成的ＳｒＴｉＯ３烧块时的结果相近，变化趋势一致。但化学共沉ＳｒＴｉＯ３之晶粒细小，杂质少，故使所制介质具有非常优异的介电性能。     

金属诱导法低温多晶硅薄膜的制备与研究

利用金属诱导晶化（Ｍｅｔａｌ Ｉｎｄｕｃｅｄ Ｃｒｙｓｔａｌｌｉｚａｔｉｏｎ,ＭＩＣ）的方法研究了ａ－Ｓｉ／Ｎｉ的低温晶化,ＭＩＣ的晶化温度降低到４４０℃。采用ＸＲＤ、Ｒａｍａｎ、ＳＥＭ和ＸＰＳ等手段研究了Ｎｉ－ＭＩＣ多晶硅薄膜的特性,分析了薄膜结构和组成,讨论了晶化过程的机理。     

TiN_p／镍基合金复合耐磨涂层的激光熔覆

在４５钢表面用激光束熔覆了ＴｉＮ_ｐ／镍基合金复合耐磨涂层，对涂层的组织和滑动磨损性能进行了分析，并讨论了不同激光工艺参数下涂层稀释度的变化情况。熔覆层由ＴｉＮ颗粒、γ－Ｎｉ初晶以及γ－Ｎｉ＋（Ｆｅ，Ｃｒ）_２３（ＣＢ）_６共晶构成。初晶γ－Ｎｉ中观察到高密度的位错，共晶化合物（Ｆｅ，Ｃｒ）_２３（ＣＢ）_６中出现了大量的层错亚结构，这些特征均使得涂层中的基体相得到了强化。在激光熔覆过程中硬质相ＴｉＮ颗粒边缘发生了部分溶解，冷却过程中重新凝固的ＴｉＮ以细小枝晶状独立形核析出。复合涂层中由于ＴｉＮ颗粒的存在使得涂层硬度显著提高，在摩擦系数不明显变大的前提下耐磨性提高了３倍。     

三元硅化物（CoxNi1—x）Si2薄膜的制备及特性

在Ｓｉ（１００）衬底上用离子束溅射方法淀积Ｎｉ,Ｃｏ,Ｔｉ薄膜,形成Ｃｏ／Ｎｉ／Ｓｉ,Ｎｉ／Ｃｏ／Ｓｉ和Ｃｏ／Ｎｉ／Ｓｉ等结构,通过氮气中快速热退火反应生成三元硅化物（ＣｏｘＮｉ１－ｘ）Ｓｉ２。用ＡＥＳ,ＸＲＤ,ＲＢＳ沟道谱,ＳＥＭ及四探针等方法（ＣｏｘＮｉ１－ｘ）Ｓｉ２薄膜的物理特性和电学特性进行了测试,在Ｓｉ衬底上Ｃｏ,Ｎｉ多层膜经快速热退火可形成高电导的（ＣｏｘＮｉ１－ｘ）Ｓｉ２薄膜,其电阻     

Co／Ti／Si三元固相反应外延生长CoSi_2薄膜

研究采用Ｃｏ／Ｔｉ／Ｓｉ三元固相反应的方法生长外延ＣｏＳｉ２薄膜．通过选择适当的热处理条件，采用多步退火，在Ｓｉ（１００）和Ｓｉ（１１１）衬底上均成功获得外延ＣｏＳｉ２薄膜．实验用ＸＲＤ、ＴＥＭ、ＲＢＳ／ｃｈａｎｎｅｌｉｎｇ等测试技术分析ＣｏＳｉ２薄膜外延特性，得到的ＣｏＳｉ２薄膜的ＲＢＳ／ｃｈｎｎｅｌｉｎｇ最低产额Ｘｍｉｎ达到１０－１４％．实验对ＣｏＳｉ２／Ｓｉ（１１１）样品，分别沿Ｓｉ衬底的＜１１０＞和＜１１４＞晶向进行背散射沟道测量．结果发现，沿Ｓｉ＜１１０＞晶向得到的ＣｏＳｉ２背散射沟道产额显著高     

新型复相陶瓷刀具材料JX—2—I的界面结构及其对材料性能的影响

本文利用ＴＥＭ研究了新型复相陶瓷刀具材料ＪＸ－２－Ｉ的界面结构，结果表明，在ＪＸ－２－Ｉ中Ａｌ２Ｏ３／ＳｉＣｗ（氧化铝／碳化硅晶须）界面和Ａｌ２Ｏ３／ＳｉＣｐ（碳化硅颗粒）界面结合良好，形成了具有较高强度的微观结构，发现在ＳｉＣｗ，ＳｉＣｐ和Ａｌ２Ｏ３晶粒上均有位错产生，在ＳｉＣｐ和Ａｌ２Ｏ３上有孪晶产生，分析表明，位错和孪晶的产生均吸收大量的断裂能，提高材料的断裂韧性，改善ＪＸ－２－Ｉ材料的整体     

1微米硅栅CMOSASIC制造中RIE的应用

本文主要介绍１ｕｍ双阱双层金属布线硅栅ＣＭＯＳ专用集成电路制造中采用先进的反应离子刻蚀技术，对多种材料如ＬＰＣＶＤ、Ｓｉ３Ｎ４、ＰＥＣＶＥＳｉ３Ｎ４、热ＳｉＯ２、ＰＥＶＥＤＳｉＯ２、ＰＳＧ、ＢＰＳＧ、多晶硅和Ａｌ－Ｓｉ（１．０％）－Ｃｕ（０．５％）合金等进行高选择比的，各向异性刻蚀的工艺条件及其结果。获得上述各种材料刻蚀后临界尺寸（ＣＤ）总损失＜０．０８ｕｍ的优良结果。此外还分析讨论了被选择的刻蚀     

三元硅化物(Co_xNi_(l-x))Si_2薄膜的制备及特性

在Ｓｉ（１００）衬底上用离子束溅射方法淀积Ｎｉ,Ｃｏ,Ｔｉ薄膜,形成Ｃｏ／Ｎｉ／Ｓｉ,Ｎｉ／Ｃｏ／Ｓｉ和Ｃｏ／Ｎｉ／Ｓｉ等结构,通过氮气中快速热退火反应生成三元硅化物（ＣｏｘＮｉｌ－ｘ）Ｓｉ２。用ＡＥＳ,ＸＲＤ,ＲＢＳ沟道谱,ＳＥＭ及四探针等方法对（ＣｏｘＮｉｌ－ｘ）Ｓｉ２薄膜的物理特性和电学特性进行了测试,在Ｓｉ衬底上Ｃｏ,Ｎｉ多层膜经快速热退火可形成高电导的（ＣｏｘＮｉｌ－ｘ）Ｓｉ２薄膜,其电阻率在１５～２０μΩ·ｃｍ之间。Ｃｏ／Ｎｉ／Ｔｉ／Ｓｉ（１００）多层结构固相反应可以得到外延（ＣｏｘＮｉｌ－ｘ）Ｓｉ２薄膜。（ＣｏｘＮｉｌ－ｘ）Ｓｉ２的晶格为ＣａＦ２立方结构,晶格常数介于ＣｏＳｉ２和ＮｉＳｉ２之间。通过热处理和选择腐蚀等工艺,可在有ＣＭＯＳ图形的衬底上形成自对准的三元硅化物源漏接触和栅极互连图形。     

激光熔覆Ni基SiC合金涂层组织与性能的研究

利用5kWCO2连续波激光器在16Mn钢基材表面对含20%(体积比)SiC陶瓷粉末的镍基自熔性合金粉末进行激光熔覆得到Ni基SiC合金涂层(NiSiC)。研究了合金涂层的组织形貌及相结构,并用单纯的镍基合金涂层(Ni60)进行了显微硬度及滑动磨损性能的对比试验。结果表明,NiSiC合金涂层由γ枝晶及其间的共晶组织组成,主要组成相为γ-Ni,γ-(Ni,Fe)固溶体和(Cr,Fe)7C3,Cr23C6及(Cr,Si)3Ni3Si等化合物。添加SiC的镍基合金涂层NiSiC比单纯的镍基合金涂层Ni60具有较高的硬度和耐磨性。     

凝固条件对γ-Ni/Mo2Ni3Si合金凝固组织的影响

设计并采用激光熔炼工艺制备出镍基固溶体γ增韧的Mo_2Ni_3Si三元金属硅化物合金。差式扫描量热分析(DSC)及高温金相实验表明,该合金共晶温度约1287℃,液相线温度约1355℃。研究了该Mo_2Ni_3Si合金在炉冷、水冷及激光表面熔凝条件下的凝固组织。结果表明,在炉冷及水冷条件下,随着凝固冷却速度的提高,合金中Mo_2Ni_3Si初生枝晶体积分数降低、二次枝晶臂间距减小,但激光表面快速熔凝合金中Mo_2Ni_3Si初生枝晶体积分数急剧增加(62％)。激光表面快速熔凝γ/Mo_2Ni_3Si合金由于组织细小,且基体γ相被Mo及Si元素过饱和固溶,具有最优异的力学性能(显微硬度600HV);炉冷Mo_2Ni_3Si合金凝固组织初生枝晶上分布着许多显微裂纹,且显微组织为粗大的二相组织,力学性能较差。     

激光熔覆Ni31Si12/FeNi金属硅化物复合材料涂层显微组织与耐蚀性研究

以Ni、Si元素粉末为原料,利用激光熔覆技术在A3钢表面制得了Ni_(31)Si_(12)/FeNi金属硅化物复合材料涂层。分析了该涂层显微组织,采用测定阳极极化曲线的方法评价了该涂层在0.5mol/l H_2SO_4水溶液中的耐蚀性能,考察了添加少量合金元素Cr对涂层耐酸腐蚀性能的影响。结果表明:激光熔覆Ni_(31)Si_(12) /12/FeNi金属硅化物复合材料涂层组织由带状Ni31Si12初生相及带间FeNi/Ni_(31)Si_(12)/12共晶组成,涂层表面平整、组织细小、与基体间为完全冶金结合;涂层组织显微硬度在HV650—75O之间,沿层深分布均匀;涂层组织组成相Ni_(31)Si_(12)/FeNi本身具有良好的耐酸腐蚀性能,具有快速凝固成分均匀的显微组织,激光熔覆Ni_(31)Si_(12)//FeNi金属硅化物复合材料涂层在H_2SO_4水溶液中表现出良好的耐蚀性。合金元素Cr的添加进一步提高了涂层的耐酸腐蚀性能。     

激光熔覆镍基金属陶瓷涂层的组织性能研究

运用 5kWCO2 连续激光器在 16Mn钢表面激光熔覆镍基B4 C金属陶瓷层 (NB4 C)和镍基SiC金属陶瓷层(NSiC) ,研究了两种激光熔覆层的组织、结构、显微硬度及滑动磨损特性 ,并用激光熔覆镍基合金层 (Ni6 0 )进行了滑动磨损对比试验。结果表明 ,熔覆合金层显微组织由枝晶固溶体及其间细密的共晶组织组成 ,NB4 C熔覆层主要组成相为γ Ni,γ (Ni,Fe) ,(Cr,Fe) 7C3,CrB ,Ni3B ,Fe2 B ,Fe2 3(C ,B) 6 和B4 C等 ,NSiC熔覆层主要组成相为γ Ni,γ (Fe,Ni) ,(Cr,Fe) 7C3,Cr2 3C6 和 (Cr ,Si) 3Ni3Si等。三种激光熔覆层的显微硬度及耐滑动磨损性能由高到低的顺序为 :NB4 C→NSiC→Ni6 0。     

Linewidth effect and phase control in Ni fully silicided gates

The scalability of Ni fully silicided (FUSI) gate processes to short gate lengths was studied for NiSi, Ni/sub 2/Si, and Ni/sub 31/Si/sub 12/. It is shown that the control of the deposited Ni-to-Si ratio is not effective for phase and V/sub t/ control at short gate lengths. A transition to Ni-richer phases at short gate lengths was found for nonoptimized NiSi and Ni/sub 2/Si processes with excessive thermal budgets, resulting in significant V/sub t/ shifts for devices on HfSiON consistent with the difference in work function among the Ni silicide phases. Linewidth-independent phase control with smooth V/sub t/ rolloff characteristics was demonstrated for NiSi, Ni/sub 2/Si, and Ni/sub 31/Si/sub 12/ FUSI gates by controlling the Ni-to-Si reacted ratio through optimization of the thermal budget of silicidation (prior to selective Ni removal). Phase characterization over a wide temperature range indicated that the process windows for scalable NiSi and Ni/sub 2/Si are less than or equal to 25 /spl deg/C, whereas a single-phase Ni/sub 31/Si/sub 12/ is obtained over an /spl sim/200/spl deg/C temperature range.     

铁基合金激光熔覆层组织分布及开裂敏感性研究

在45#钢基底上进行了铁基合金粉末激光熔覆实验。利用扫描电镜观察了熔覆层横断面的金相显微组织形态,对组织的不同特征部位进行了EDS能谱分析,使用X射线衍射仪对熔覆层进行物相分析。结合熔覆层的组织成分分布和激光熔覆过程中组织凝固的特点,分析得到熔覆层中存在少量的Si和B与Fe、Cr、Ni、O结合形成的低熔点共晶,低熔点共晶分布在晶界,尤其是夹杂在熔覆层表层部分,成为裂纹源。调节熔覆材料的成分,减少低熔点共晶产生,可以有效抑制熔覆层的裂纹敏感性。     

Fabrication and Microstructures of Sequentially Electroplated Sn-Rich Au-Sn Alloy Solders

Three Sn-rich, Au-Sn alloy solders with eutectic, hypoeutectic, and hypereutectic Sn compositions were fabricated by sequential electroplating of Au and Sn and then the dual-layer films were reflowed at 250°C. The microstructures and phase compositions of the deposited Au/Sn dual-layer film and the reflowed Sn-rich Au-Sn alloys were studied. Microhardness values of the different phases or phase zones for the reflowed alloys were also tested. Finally, two Si wafers were bonded together with the eutectic Sn-rich Au-Sn alloy solder. For as deposited Au/Sn dual-layer films, reaction between Au and Sn occurs at room temperature leading to the formation of Au₅Sn, AuSn, and AuSn₂ at the Au/Sn interface. After reflowing at 250°C, two phases remain, Sn and AuSn₄, with the morphology and phase distribution depending on the original solder composition. In the Sn-rich, eutectic Au-Sn alloy, AuSn₄ particles are distributed uniformly in the Sn matrix. In the Sn-rich hypoeutectic/hypereutectic Au-Sn alloys, the proeutectic phase, AuSn₄ (Vickers hardness, Hv 125) or Sn (Hv 14.2), is larger in size and is surrounded by the eutectic zone (Sn + AuSn₄) (Hv 16.1). In all cases, the TiW adhesion and barrier layer remains intact during annealing. After reflowing at 250°C under a pressure of 13 kPa, two Si wafers are joined by the Sn-rich eutectic Au-Sn alloy solder, without crack or void formation at the Si wafer/solder interface or within the solder.     

Interfacial microstructure of Pb-free and Pb-Sn solder balls in the ball-grid array package

Ball-grid array (BGA) samples were aged at 155°C up to 45 days. The formation and the growth of the intermetallic phases at the solder joints were investigated. The alloy compositions of solder balls included Sn-3.5Ag-0.7Cu, Sn-1.0Ag-0.7Cu, and 63Sn-37Pb. The solder-ball pads were a copper substrate with an Au/Ni surface finish. Microstructural analysis was carried out by electron microprobe. The results show that a ternary phase, (Au,Ni)Sn₄, formed with Ni₃Sn₄ in the 63Sn-37Pb solder alloy and that a quaternary intermetallic phase, (Au,Ni)₂Cu₃Sn₅, formed in the Sn-Ag-Cu solder alloys. The formation mechanism of intermetallic phases was associated with the driving force for Au and Cu atoms to migrate toward the interface during aging.     

Impact of surface preparation on nickel-platinum alloy silicide phase formation

Nickel based silicide films were prepared by annealing nickel-platinum layers deposited on n-doped Si substrates. We report on the evolution of the crystallography, the phase formation and the redistribution of contaminants on blanket wafers during silicide formation as a function of the silicon surface preparation prior to Ni(Pt) deposition. In situ argon sputtering etch creates a contamination layer which modifies phase texture during the formation of the first Ni silicide phases. Using remote pre-clean results in a predominant Ni₂Si phase with preferential grain orientation after a first anneal. After a second anneal, the monosilicide forms, regardless of what nickel rich silicide phase was initially formed and regardless of the surface preparation prior to metal deposition.     

激光熔敷Ti5Si3/NiTi金属间化合物复合材料涂层组织与高温抗氧化性能研究

以Ti—Si—Ni混合合金粉末为原料,利用激光熔敷技术,在高温、高强钛合金BT9表面制得了以金属间化合物Ti5Si3为强化相、以金属间化合物NiTi为基体的金属间化合物快速凝固高温抗氧化复合材料涂层。在1000℃恒温氧化50小时的试验条件下测试了涂层的抗氧化性及氧化动力学曲线,分析了复合材料涂层及氧化膜的显微组织结构及相组成。