多通道ISDN终端适配器

据《IEEE Communications Magazine》1992年4月号报道:最近美国UDS Motorola公司推出一种型号为TA220的新式ISDN终端适配器。该适配器包括4个ISDN基本速率接口(BRI)。TA220能使用户连接多达4个终端,4个PC机以及其它的有关ISDN网的数据终端设备。设计的这种适配器也可用于视频会议,用户可将两个这种适配器的64kb/s B通道连接起来以产     

多通道ISDN终端适配器

据《通信杂志》一九九二年四月号报道,莫托罗拉公司新近推出结合高达4个ISDN基本速率接口(BRI)的ISDN终端适配器——TA220。TA220使用户能把4个终端、PC机或其它数据终端设备连接到ISDN网络上。该适配器的设计同时还适用于视频会议通信场合。用     

ISDN终端和终端适配器

系统概述ISDN（综合业务数字网）的实现,不仅为运营公司带来好处（如改进效率和带宽）,而且为终端用户带来从前不可能有的新的服务和性能一ISDN的终端用户必须使他们已有的非ISDN设备适应ISDN网络,或购买新的ISDN兼容设备称之为终端设备的各种办公设备如电话、计算机和传真机,可配置于ISDN（见图1）。终端适配器（TA）执行把非lSD＼设备接到网络所必要的速率适配协议TA可做为独立的盒子或PC插卡。所有ISDN终端设备采用CCITT标准S接口4线收发器。这便于进行点对点或多点连接。基本速率lSDN连接山三个独立信道组成：两…     

新的PC Card

超高速调制解调器、ISDN适配器和高速以太网卡——当今的PC Card无所不能！ 有了笔记本机,就可去旅行了。使用最新的PC Card,通过您的办公网络或Internet,您总可以与同事保持联系。这些信用卡大小的设备内装了33.6Kbps和56Kbps调制解调器、ISDN适配器和10/100以太网卡。     

基于MTCA架构的ISDN接入网关设计

设计了一种基于MTCA架构的ISDN接入网关AMC模块。给出了以VOIP处理器M82515为核心的核心控制电路以及专用芯片构成的接口电路的硬件结构和组成。以Vxworks系统作为嵌入式软件平台,采用C语言进行了ISDN信令、SIP信令以及信令转换的软件开发,实现了ISDN业务在MTCA系统中的接入以及ISDN终端与SIP软电话的呼叫流程。     

数字电话机的原理与功能

数字电话机是一种常用的ISDN终端设备，又称ISDN话机。它不仅具有高质量的话音传输功能，提供基本的电话业务，也能够提供模拟话机（POTS）所不具有的许多方便用户的ISDN附加业务。当数字电话机配有数据通信接口时，可以和非ISDN终端PC机、第3类传真机接口，兼作ISDN适配器使用，完成数据通信功能。一、数字电话机的基本原理数字话机可分为普通型、标准型、增强型3种类型，它们的基本功能——数字话音传输功能是相同的，（日附加功能差别很大。普通型数字电话机外形及结构与普通话机几乎一致，不带数据通信接口。标准型、增强型…     

ISDN用户—网络接口

ISDN用户—网络接口是ISDN的中心,决定着网络的大多数特性。本文论述了ISDN用户—网络接口的目标和一般要求;网络的功能规范和参考点的定义以及NB—ISDN用户—网络接口信道结构的规定;同时文中还论述了B—ISDN用户—网络接口的发展动向。     

ISDN终端设备的应用

分别对ISDN 路由器、一类网络终端NT 1、PC机适配卡、TA卡和数字电话机等ISDN终端设备做出简明的相关技术分析,并对其应用做简单的介绍     

游戏新装备

为了配合《最终幻想Ⅺ》的推出,由NEC制造对应PS2的口team ITX80PlayOnline Special口SDN已经面市。这款PLAYONLINE专用ISDN的标准价格为19800日元,其限定版只制作了3000台。这部ISDN调制解调器拥有着一般PC调制解调器的所有功能,另外还设有数据传输接口,可轻松与PC进行数据交换。     

Pulse快速以太网集成的磁性器件

Pulse公司推出系列温度经扩展的集成化磁性器件。其应用领域包括PC和SoHo市场上的服务器、网络接口卡、电机驱动控制、交换和集线器，以及VoIP电话等。这种称为Star Magnetics的系列器件包括单端口HX1260和HX2260、双端口HX1305和HX2305，以及4端口HX1259，均属于快速以太网(10／1000BaseT)磁性器件，     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.