Dual mode wideband band-pass filter with notched band for communication system

This paper presents a planar microstrip wideband dual mode Band-Pass Filter (BPF) from 2 GHz to 3.4 GHz with a notched band at 2.62 GHz. The dual mode band-pass filter consists of a ring resonator with two quarter-wavelength open-circuited stubs at ?? =90° and ?? =0°, respectively. A square perturbation stub has been put at the corner of the ring resonator to increase the narrow stopbands and improve the performance of selectivity. By using a parallel-coupled feed line, a narrow notched band is introduced at the required frequency and its Fractional BandWidth (FBW) is about 5%. The proposed filter has a narrow notched band and a wide pass-band with a sharp cutoff frequency characteristic, the attenuation rate for the sharp cutoff frequency responses is 297.17 dB/GHz (calculated from 1.959 GHz with ?34.43 dB to 2.065 GHz with ?2.93 dB) and 228.10 dB/GHz (calculated from 3.395 GHz with ?2.873 dB to 3.507 GHz with ?28.42 dB). This filter has the advantages of good insertion loss in both operating bands and two rejections of greater than 16 dB in the range of 1.59 GHz to 1.99 GHz and 3.49 GHz to 3.98 GHz. Having been presented in this article, the measurement results agree well with the simulation results, which validates our idea.     

小型化双通带声表滤波器设计研究

针对小型化双通带声表面波(SAW)滤波器的需求背景,对两端口、两通带的SAW滤波器的设计技术展开研究。通过搭建包含两组耦合模(COM)参数的双通带SAW滤波器声电协同仿真平台,分析优化滤波器性能,成功研制出CSP2520封装的双通带SAW滤波器,其中心频率分别为1 995 MHz和2 185 MHz,通带带宽均为40 MHz,插入损耗小于3 dB,通带间隔离度大于30 dB。测试与仿真结果基本一致。     

10.7MHz带阻型石英晶体滤波器研制

采用如今晶体滤波器设计中最为常用的格型电路,成功设计和研制出了用于通讯机中进行狭窄频带抑制的一种中高频带阻型晶体滤波器新产品.主要技术指标是:插损IL≤3dB、3dB带阻宽度BW3dB≤±3KHz、带阻衰减(限波)≥50dB、体积小、加工难度大等.研制的结果较好的满足了设计要求.     

Post-CMOS Compatible Micromachining Technique for On-Chip Passive RF Filter Circuits

This paper reports on a post-CMOS compatible micromachining technology for passive RF circuit integration. The micromachining technology combines the formation of high-performance microelectromechanical systems solenoid inductors and metal—insulator—metal (MIM) capacitors by using a post-CMOS process on standard CMOS substrate. Utilizing this process, novel on-chip 3-D configured RF filters for 5 GHz band are integrated on-chip. Two types of compact filters are designed and fabricated, with the layout size of the bandpass filter as 0.65 $,times,$0.67 ${rm mm}^{ 2}$ and that of the low-pass filter as 0.77$,{ times },$1.25 ${rm mm}^{ 2}$. From the measurement results, the fifth-order low-pass filter shows less than 1.06 dB insertion loss up to 5 GHz and ${-}{rm 1.5}~{rm dB}$ cutoff frequency at 5.3 GHz. The bandpass filter is a second-order coupled-resonator type, with measured 4.3 dB minimum insertion loss and better than 13 dB return loss in the pass band. Both simulation and shock testing results have shown that the filters are almost free of influence from environmental vibration and shock. From the measured results in various temperatures, the bandpass filters were found to show lower loss under low temperatures, while the passband shift is negligible in the various temperatures. Together with the fabricated filters, the developed micromachining technique has demonstrated the potential of on-chip integration and miniaturization of passive RF circuits.      

A 10–40 GHz Broadband Subharmonic Monolithic Mixer in 0.18 $mu$ m CMOS Technology

A 10–40 GHz broadband subharmonic monolithic passive mixer using the standard 0.18 $mu$ m CMOS process is demonstrated. The proposed mixer is composed of a two-stage Wilkinson power combiner, a short stub and a low-pass filter. Likewise, the mixer utilizes a pair of anti-parallel gate-drain-connected diodes to achieve subharmonic mixing mechanism. The two-stage Wilkinson power combiner is used to excite a radio frequency (RF) and local oscillation (LO) signals into diodes and to perform broadband operation. The low-pass filter supports an IF frequency range from dc to 2.5 GHz. This proposed configuration leads to a die size of less than 1.1$,times,$ 0.67 mm$^{2}$ . The measured results demonstrate a conversion loss of 15.6–17.6 dB, an LO-to-RF isolation better than 12 dB, a high 2LO-to-RF isolation of 51–59 dB over 10–40 GHz RF bandwidth, and a 1 dB compression power of 8 dBm.      

A 7-Gc/s Narrow-Band Waveguide Switch Using p-i-n Junction Diodes

A narrow-band waveguide switch with power capability in excess of 8 watts has been designed in WR137 waveguide. j-i-n diodes are used in band elimination filter sections. the attenuation in the reject band is greater than 80 dB over a 10 Mc/s range, and the passband loss is less than 0.5 dB.     

A Novel 3–5 GHz Active Matched Filter for Impulse Radio Ultra-Wideband

In this letter, a novel active matched filter for UWB-IR lower band (3.1–4.85 GHz) is presented. The signal to noise ratio is improved at the output using a tapped delay line with a common source amplifier. An artificial transmission line is used for wideband impedance matching. The matched filter achieves a power gain of 9.8 dB at center frequency. Input matching is better than ${-}19$ dB and output matching is better than ${-}15$ dB. The averaged SNR improvement is 4.6 dB using peak detection. Input referred 1-dB compression point is 0.7 dBm at the center frequency. The matched filter is biased from a 1.5 V supply with a total power consumption of 38 mW.      

Design of Balanced Dual‐Band Bandpass Filter with Self‐Feedback Structure

A balanced dual‐band bandpass filter based on λ/2 stepped‐impedance resonators and open‐loop resonators is proposed in this letter. By employing a type of self‐feedback structure, an extra transmission zero is introduced near the common‐mode resonance frequency, and the common‐mode signal is suppressed. The measured results indicate that the filter can operate in 2.46 GHz and 5.6 GHz bands, and the insertion loss is 1.85 dB and 1.9 dB, respectively. Also, better common‐mode suppression is achieved.     

A Low-Loss Branching Filter for Broad Widely Spaced Bandwidths (Short Papers)

A waveguide filter which separates the 4-GHz band the combined 4-, 6-, and 11-GHz common-carrier bands with a loss of only 0.05 dB is described. The input is limited to a single polarization, but dual polarizations can be accommodated by using two such filters in combination with a polarization coupler. The filter also has low insertion losses at 6 and 11 GHz: 0.1 dB and 0.06 dB, respectively, a good return loss, 32 dB, and a short length, 2 1/2 ft. Additionally, it has high power-handling capability, good isolation properties, and good mode purity.     

高功率密度光纤激光元器件传输特性测试系统

为了提高高功率密度下光纤激光元器件传输特性测量精度,采用基于光纤标准测试方法的双光路测量结构,设计了自动光功率比测量系统。对双光路系统的特点进行了理论分析和实验验证。利用固体微晶片激光器作为光源输出,建立了折射率匹配法传输特性测试仪实验装置,对掺镱双包层光纤的传输损耗特性进行了测量。实验中测得35m长掺镱双包层光纤对1064nm光的插入损耗为2.645dB,测得100组数据对应的标准偏差为0.026dB。并在不同的条件下进行了多次重复实验,重复测量误差不超过0.07dB。这一结果对于提高光纤激光元器件测试精度是有帮助的。     

双波段高抑制的LTCC微型双工器设计

该文设计了基于低温共烧陶瓷(LTCC)技术的双波段高抑制、低损耗的双工器。该双工器由低通滤波器和带通滤波器组成,且在低、高频段的阻带抑制方面运用了传输零点理论,在实现双工器低损耗的同时,也实现了在多波段的高抑制,提升了双工器的性能。该双工器在低频段(0.68~0.95 GHz)及高频段(1.43~2.40 GHz)时插损均小于1.2 dB,但在1.43~2.40 GHz时双工器抑制大于20 dB,0.68~0.95 GHz时双工器抑制大于15 dB。在4.9~5.9 GHz时双工器抑制大于13 dB,具有良好的市场应用前景。     

具有带外抑制特性的Ka波段低功耗低噪声放大器

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,成功研制了一款30~34 GHz频带内具有带外抑制特性的低功耗低噪声放大器(LNA)微波单片集成电路(MMIC)。该MMIC集成了滤波器和LNA,其中滤波器采用陷波器结构,可实现较低的插入损耗和较好的带外抑制特性;LNA采用单电源和电流复用结构,实现较高的增益和较低的功耗。测试结果表明,该MMIC芯片在30~34 GHz频带内,增益大于28 dB,噪声系数小于2.8 dB,功耗小于60 mW,在17~19 GHz频带内带外抑制比小于-35 dBc。芯片尺寸为2.40 mm×1.00 mm。该LNA MMIC可应用于毫米波T/R系统中。     

基于CSRR-QMSIW谐振器的双通带滤波器的设计

为满足滤波器在双频带通信系统中发展的要求,提出了一种基于1/4模基片集成波导(QMSIW)加载互补开口谐振环(CSRR)的新型双通带滤波器。根据CSRR谐振器的传输特性,实现以其谐振频点为中心的第一个通带;设计QMSIW谐振腔的边长,实现以该腔体谐振频点为中心的第二通带;设计QMSIW腔体间的耦合方式,在两通带之间和高阻带处各引入一个传输零点,加强两通带隔离度和带外抑制。设计了一款两通带的中心频率分别为8.1 GHz和11.5 GHz,且有效尺寸仅为15 mm×8 mm,插入损耗低于0.4 dB,高阻带衰减达64 dB,两通带隔离度达46 dB。     

70 GHz Folded Loop Dual-Mode Bandpass Filter Fabricated Using 0.18 $mu$ m Standard CMOS Technology

This letter presents the design and implementation of a 70 GHz millimeter-wave compact folded loop dual-mode on-chip bandpass filter (BPF) using a 0.18 $mu$m standard CMOS process. A compact BPF, consisting of such a planar ring resonator structure having dual transmission zeros was fabricated and designed. The size of the designed filter is 650$,times,$ 670 $mu$ m$^{2}$ . Calculated circuit model, EM simulated and measured results of the proposed filter operating at 70 GHz are shown in a good agreement and have good performance. The filter has a 3-dB bandwidth of about 18 GHz at the center frequency of 70 GHz. The measured insertion loss of the passband is about 3.6 dB and the return loss is better than 10 dB within the passband.      

A 0.13 μm CMOS UWB RF Transmitter with an On‐Chip T/R Switch

This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a ?3 dB bandwidth of 550 MHz at each sub‐band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.     

A dual-mode complex filter for GNSS receivers with frequency tuning

A fifth/seventh order dual-mode OTA-C complex filter for global navigation satellite system receivers is implemented in a 0.18 fxm CMOS process. This filter can be configured as the narrow mode of a 4.4 MHz bandwidth center at 4.1 MHz or the wide mode of a 22 MHz bandwidth center at 15.42 MHz. A fully differential OTA with source degeneration is used to provide sufficient linearity. Furthermore, a ring CCO based frequency tuning scheme is proposed to reduce frequency variation. The measured results show that in narrow-band mode the image rejection ratio (IMRR) is 35 dB, the filter dissipates 0.8 mA from the 1.8 V power supply, and the out-of-band rejection is 50 dB at 6 MHz offset. In wide-band mode, IMRR is 28 dB and the filter dissipates 3.2 mA. The frequency tuning error is less than ±2%.     

一种Ka/EHF频段分波器(OMJ)的设计

针对传统分波器影响高频方向图的问题,提出了一种新型的Ka/EHF频段分波器设计方法。与传统分波器相比,该分波器具有低损耗、低驻波、高频段隔离的优点,其通过使用皱褶波纹滤波器和sin²曲线过渡,实现了Ka、EHF频段信号的低损耗分离,分布式参数综合设计的波纹滤波器对高频信号产生了极佳短路面,sin²函数曲线过渡较好地抑制了高次模。设计、加工和测试了样机,接收频段的回波损耗小于-22 dB,发射频段的回波损耗小于-25.2 dB,仿真结果与测试结果基本吻合,验证了方法的正确性和有效性。     

60-GHz-band coplanar MMIC active filters

This paper presents the design and performance of 60-GHz-band coplanar monolithic microwave integrated circuit (MMIC) active filters. To compensate for the loss of the passive filter, a resonator composed of a quarter-wavelength line is terminated by a circuit with a constant negative resistance over a wide frequency band. Cross-coupling is introduced to make the attenuation poles on both sides of the passband. We develop two types of two-stage filter: one with medium bandwidth and the other with narrow bandwidth. The former shows an insertion loss of 3.0 dB with a 3-dB bandwidth of 2.6 GHz and a rejection of larger than 20 dB at a 3-GHz separation from a center frequency of 65.0 GHz. This filter also shows a noise figure of 10.5 dB. The latter filter shows an insertion loss of 2.8 dB with a 10-dB bandwidth of 2.1 GHz at a center frequency of 65.0 GHz. It also shows an output power of 5.0 dBm at a 1-dB compression point. The loss variation due to temperature variation is successfully compensated using a gate bias control circuit. The size of the MMIC filters is 2.5 mm/spl times/1.1 mm.     

TD-SCDMA A频段交叉耦合腔体滤波器的设计与实现

TD-SCDMA采用的是TDD工作方式,收发采用相同的频带,由于PHS的存在,A频段带宽为1 8801 900 MHz,体积有严格要求110 mm×75 mm×30 mm,难点是在此体积下实现带内最大插损小于0.9 dB,插损纹波小于等于士0.3 dB,回波损耗大于18 dB的设计要求,带外抑制要求S<,21><-75...     

Monolithic Integration of a Multiplexer/Demultiplexer With a Thermo-Optic VOA Array on an SOI Platform

In this letter, a nine-channel 100-GHz arrayed waveguide grating multiplexer/demultiplexer is monolithically integrated with a Mach–Zehnder interferometer thermo-optic variable optical attenuators (VOAs) arrayed on a silicon-on-insulator platform. The on-chip transmission loss is $sim$6 dB and the crosstalk is less than $-$25 dB for the transverse-electric mode. The maximum modulation depths of different thermo-optic VOAs are similar, $sim$ 15 dB with 2.7-V bias. The frequency response of our device is fast ($geq$ 100 kHz) for thermo-optic effect devices. The maximum power consumption of a single VOA is less than 35 mW.