Research Progress on Multimode Interference Switches

Optical switches are key components for constructing optical communication networks, so it is necessary to design optical switches and optical switch arrays with high performance and low cost. As one type of optical switches, the multimode interference（MMl） switches have received considerable attention due to their unique merits. The structures and operation principles of various types of MMI switches are introduced, and the recent progresses of MMI switches are also discussed.     

Novel approach to design high-performance large-port-count switches in low-index-contrast materials based on cascaded multimode interference couplers

Using a novel design approach, high-performance large-port-count switches based on cascaded multimode interference (MMI) couplers are shown to be feasible in low-index-contrast materials. This approach combines the transfer matrix method, optimization of the MMI dimensions, and mode propagation analysis (MPA) for calculation of phase shifts. 1/spl times/4, 1/spl times/8, 1/spl times/16, and 1/spl times/32 switches are designed, with insertion losses of 1 dB and crosstalk as low as -31.7 dB. Also, it is shown that this approach can balance the losses for different switch states.     

Analysis of generalized Mach-Zehnder interferometers forvariable-ratio power splitting and optimized switching

The nonideal integrated optical N×N generalized Mach-Zehnder interferometer (GMZI) employing multimode interference (MMI) couplers is analyzed using transfer matrix techniques. Deviations in the phase relations and the power splitting ratio of the MMI couplers are included in the theory, along with the effects of phase errors in the interferometer arms. The predictions of the theory are compared to the response of a 4×4 GMZI which has been fabricated. The device is operated as both a variable-ratio power splitter and a switch by compensating for the phase errors in the interferometer arms, but the performance is ultimately limited by the nonideal imaging in the MMI couplers. The practicality of these applications is investigated by performing a tolerance analysis for the operation of 1×N power splitters and switches for N up to 10     

An integrated hybrid device for binary-phase-shift-keyingsubcarrier modulation

We propose an integrated optical/radio frequency (RF) hybrid device for binary-phase-shift-keying subcarrier modulation that is based on optical amplitude modulation and interference with phase delay. The device consists of two multiple-quantum-well (MQW) electroabsorption (EA) modulators branched with two multimode interference (MMI) couplers. When an RF carrier was applied to one modulator and a digital signal to the other one, the phase modulation of the RF subcarrier was realized     

Soft-switching PWM three-level converters

This paper proposes a family of modulation strategies for PWM three-level (TL) converters. The modulation strategies can be classified into two kinds according to the turn-off sequence of the two switches of the pair of switches. The concept of the leading switches and the lagging switches is introduced to realize soft-switching for PWM TL converters. The realization of soft-switching for both the leading switches and the lagging switches is proposed, based on which, soft-switching PWM TL converters can be classified into two kinds: zero-voltage-switching (ZVS) and zero-voltage and zero-current-switching (ZVZCS), for which the suitable modulation strategies are pointed out respectively from the family of modulation strategies. A novel ZVZCS TL converter is proposed, its operation principle and parameter design are analyzed, and the experimental results are also included     

Low-power compact 2×2 thermooptic silica-on-silicon waveguideswitch with fast response

5-mm-long and 50-μm-wide thermooptic waveguide 2×2 Mach-Zehnder interferometer (MZI) switches with multimode interference (MMI) couplers have been realized in silica-on-silicon. The use of diffused square waveguides with a separating trench results in low heating power of 110 mW for π phase shift and short rise and fall times of 150 and 180 μs, respectively     

中红外Ge20As20Se15Te45硫系玻璃光纤光栅光开关

利用熔融淬冷法制备了Ge20As20Se15Te45硫系玻璃,测试结果表明该玻璃在中红外波段具有良好的红外透过特性和极高的非线性,采用Z-扫描技术测试其中红外三阶非线性系数高达n2=6.7210-18 m2/W @ 4 m。以此材料为基质,设计了两种工作在中红外波段的硫系玻璃光纤光栅光开关。利用分布时域传递矩阵法(TD-TMM)和非线性耦合方程模拟计算了光栅光开关的反射谱和波长偏移特性。研究结果表明,通过调节输入光强可以灵活调节光纤光栅的中心波长向短波或长波方向移动,进而可以获得光开关。在调制深度为110-3的均匀硫系光纤光栅,获得光开关的功率阈值约为1.6 GW/cm2,当引入相移光栅后,调制深度可以降低为310-4,并且其光开关的功率阈值也降低到210 MW/cm2。     

Multimode interference couplers for the conversion and combining ofzero- and first-order modes

Optical waveguide mode-combiners for fundamental and first-order modes, based on multimode interference (MMI) couplers are presented. These devices convert a fundamental mode into a transversal first-order mode and combine it in lossless fashion with a second fundamental mode. They can separate zero- and first-order modes in a common waveguide and allow the splitting and combining of zero- and first-order modes with nonuniform power splitting ratios. Realizations in InGaAsP-InP are demonstrated. These new components have successfully been integrated into all-optical switches and were found to have advantageous characteristics in all-optical devices     

Multimode interference photonic switches (MIPS)

The switching characteristics of multimode interference photonic switches (MIPS) are analyzed by wide-angle finite difference beam propagation method (FD-BPM). As a result, it is found that the MIPS with a multimode interference (MMI) length of 599 μm can switch the output light polarization insensitively with a crosstalk of less than -20 dB for a wavelength range of 70 nm. These analyses show that the MIPS can also have a 3-dB coupler function. Experimentally, an InGaAsP/InP 1×2 MIPS with a thicker InP cladding layer was fabricated and exhibited switching operation with crosstalks of -8 dB and -10 dB at 0 and 20 mA current injections, respectively. For a 2×2 MIPS with a thinner InP cladding layer, better switching characteristics with a crosstalk of -13 dB and an extinction ratio of 17 dB were realized     

Experimental demonstration of all-optical regeneration using anMMI-SOA

A novel all-optical 2R regenerator based on a multimode interference coupler (MMI) semiconductor optical amplifier is presented. Static measurements of the transfer function reveal a digital transfer characteristic and a high increase in extinction ratio. The experiments are in good agreement with simulations, which have been done using a modified beam propagation method program. The device has a high tolerance to the MMI length. It has been fabricated in an all-active layout, avoiding the need for active/passive integration and is very compact     

Expressions for nonlinear effects of MEMS switch beam oscillations

MEMS switches with a beam that is free to move during RF signal transmission have nonlinear transfer functions, due to variations in the capacitance between the beam and the underlying transmission line. Expressions for the relative magnitude of modulation and intermodulation products are presented     

Temperature Dependence of Characteristics for Multimode Interference Based 3—dB Coupler in SOI

The temperature dependence of characteristics for multimode interference (MMI) based 3-dB coupler in silicon-on-insulator is analyzed, which originates from the relatively high thermo-optic coefficient of silicon.For restricted interference 3-dB MMI coupler,the output power uniformity is ideally 0 at room temperature and becomes 0.32 dB when temperature rises up to 550 K.For symmetric interference 3-dB MMI coupler,the power uniformity keeps ideally 0 due to its intrinsic symmetric interference mechanism.With the temperature rising,the excess loss of the both devices increases.The performance deterioration due to temperature variety is more obvious to restricted interference MMI3-dB coupler,comparing with that of symmetric interference MMI3-dB coupler.     

Matrix converter controlled with the direct transfer function approach: analysis,modelling and simulation

Power electronics is an emerging technology. New power circuits are invented and have to be introduced into the power electronics curriculum. One of the interesting new circuits is the matrix converter (MC), and this paper analyses its working principles. A simple model is proposed to represent the power circuit, including the input filter. The power semiconductors are modelled as ideal bidirectional switches and the MC is controlled using a direct transfer function approach. The modulation strategy of the converter is explained in a complete and clear form. The commutation problem of two switches and the generation of overvoltages are clarified. The paper also includes a soft-switching commutation method that allows for a safe commutation of the switches. Finally a complete simulation scheme, using Matlab®–Simulink®, is discussed.     

Accurate analysis of MMI devices with two-dimensional confinement

The accurate analysis of multimode interference (MMI) devices with two-dimensional (2-D) confinement has been demonstrated by using the least squares boundary residual (LSBR) method. Accurate modal propagation constants and spatial field profiles in the MMI section are obtained by using the vector H-field based finite element method. The accurate calculation of the excited modal coefficients is achieved by using the LSBR, which satisfies the continuity of the transverse field components more rigorously than using simple overlap integrals     

1.55-μm wavelength-selectable microarray DFB-LD's withmonolithically integrated MMI combiner, SOA, and EA-modulator

We developed compact (1.136 mm²) eight-channel wavelength-selectable microarray distributed feedback laser diodes (DFB-LD's) with a monolithically integrated 8×1 multimode-interference (MMI) optical combiner, a semiconductor optical amplifier (SOA), and an electro-absorption (EA) modulator. By using ±10°C thermal tuning, an addressable wavelength range of 15.3 nm with uniform device characteristics and 2.5-Gb/s modulation performance were successfully demonstrated     

Manufacture tolerance analysis and control for a polymer-on-silicon Mach-Zehnder-interferometer-based electro-optic switch

To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi-mode interference (MMI) Mach-Zehnder interferometer (MZI)-based electro-optic (EO) switch is designed and optimized. Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and ±1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 ?. The manufacture tolerance is analyzed...     

硅基槽波导级联多模干涉耦合器型偏振分束器

提出了一种基于硅基槽波导的级联多模干涉(MMI)耦合器型偏振分束器,由锥形及矩形结构MMI耦合器构成.级联结构使器件长度无需为两偏振模自镜像长度的公倍数,不仅能有效减小器件尺寸,而且提高设计灵活性.同时,利用槽波导的高双折射特性及MMI耦合器的锥形结构,可进一步缩短器件尺寸.分析结果表明,所提器件能够有效实现偏振束分离,两级MMI工作区总长度仅为42μm,准TE与准TM模的偏振消光比分别为29.8和31.4d B,1.55μm波长下的插入损耗分别为0.395和0.699 d B,偏振消光比大于20 d B时光带宽为43 nm,覆盖整个C波段.最后,详细分析了器件关键参数的制造误差对器件性能的影响.     

Transmitter Architectures Based on Near-Field Direct Antenna Modulation

A near-field direct antenna modulation (NFDAM) technique is introduced, where the radiated far-field signal is modulated by time-varying changes in the antenna near-field electromagnetic (EM) boundary conditions. This enables the transmitter to send data in a direction-dependent fashion producing a secure communication link. Near-field direct antenna modulation (NFDAM) can be performed by using either switches or varactors. Two fully-integrated proof-of-concept NFDAM transmitters operating at 60 GHz using switches and varactors are demonstrated in silicon proving the feasibility of this approach.      

Polycrystalline cubic silicon carbide photoconductive switch

The first cubic silicon carbide (3C-SiC) photoconductive switches were fabricated from polycrystalline 3C-SiC. The switches had a dark resistivity of 10⁶ Ω/cm. A breakdown field of 250 kV/cm and a peak photocurrent density of 10 kA/cm² through the switch were obtained. The ratio of off-resistance to on-resistance of the switch reached up to 10⁵. The photocurrent had a pulse width as narrow as 15 ns. The trigger gain of the switch was 4.7     

Simulation of Tunable Power Multimode Interference Couplers with Deep Rib Structure

The muhimode interference （MMI） couplers, which operate at 1. 55 microns in deep rib InGaAsP/InP waveguide with large lateral confinement and tunable power splitting ratios, are of high interest in integrated optics. The gold contacts are applied on the top of waveguides where tuning is desired and the plasma effect will lead to negative refractive index change. The three-dimensional （3D） finite difference beam propagation method（FD-BPM） is used to model the tunable MMI couplers. The length of a 2 × 2 overlap-MMI is determined by FD-BPM, so the longitudinal position of tuning spots is obtained. The position of gold contacts with two types, the edge-pads or center-pad, are also determined. In our design, the length of MMI is 180 microns. If the width of pads is 50 microns and the refractive index is tuned from 0 to -0. 027, the power ratio is tuned from 50 ： 50 to the maximum 88.5 ： 11.4. For deep rib structure, the effective index（EI） method can not be used to simplify the 3D waveguide to plane waveguide because of its lower precision, and so the direct 3D FD-BPM simulation is necessary for the design of 3D MMI couplers.