Influence of fillers on the re-crystallization and dielectric properties of 60ZnO-30B<Subscript>2</Subscript>O<Subscript>3</Subscript>-10SiO<Subscript>2</Subscript> glass

This paper reports re-crystallization behaviour of 60ZnO-30B₂O₃-10SiO₂ pure glass. Influence of different fillers on the re-crystallization is also highlighted. Irrespective of the nature of the filler, glass transition temperature (T_g) remains the same as that of the pure glass at 570 °C. The onset crystallization temperature is enhanced by 15 to 25 °C owing to filler addition. The peak crystallization temperature corresponding to Zn₃B₂O₆, ZnB₂O₄ and willemite occurs at 735, 810 and 851 °C for the pure glass. In the presence of alumina, gahnite emerges first at 700 °C followed by ZnB₂O₄ phase. With mullite as filler, initially ZnB₂O₄ and willemite formed at 700 °C and gahnite phase emerged only at 750 °C and peaks at 787 °C. In the presence of fused silica only ZnB₂O₄ and willemite phases were observed. The dielectric properties of the pure glass and that of the glass + fillers are also reported. Re-crystallization of various low K phases ensures good dielectric porpertis with reduced glass content after sintenring.     

Crystallization,microstructures and properties of low temperature co-fired CaO-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> glass-ceramic

CaO-Al₂O₃-SiO₂ glass-ceramic were prepared by melt quenching technique. The crystallization behavior and properties were studied by means of a non-isothermal, thermal analysis technique, X-ray diffraction and scanning electron microscopy. The influence of sintering temperature on phase formation, microstructure, bending strength, dielectric and thermal properties were determined. The activation energy of crystallization and the Avrami parameter were also discussed. The X-ray diffraction results show that SiO₂ phase could be found in all samples and CaSiO₃ and anorthite phases could only be observed in the samples sintered at above 875°C. The densification of glass-ceramic starts at 730°C after the liquid glass is formed and stops at 803°C. Complete densification was achieved at 875°C and the highest mechanical strength was obtained at 850°C, but density significantly decreased at higher temperatures. The coefficient of thermal expansion and the dielectric constant increase with the increasing sintering temperature. The value of the Avrami parameter (n) is ~1.6 and the apparent activation energy (E) is 298 kJ/mol.     

Low Temperature Sintering of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript>-Based Middle-<Emphasis Type="Italic">k</Emphasis> Dielectric Composition for LTCC Applications

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi₄O₉-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875C. The microwave dielectric properties were k = 32, Q × f = 9000 GHz, and t_cf = 10 ppm/C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi₄O₉ to BaTi₅O₁₁ and Ba₄Ti₁₃O₃₀ was observed, which result in the modification of microwave dielectric properties.     

Giant dielectric response with reduced loss in ceramics with nominal composition of La<Subscript>1.5</Subscript>Sr<Subscript>0.5</Subscript>NiO<Subscript>4</Subscript>-SiO<Subscript>2</Subscript>

Structures and dielectric properties of La_1.5Sr_0.5NiO₄ ceramics with different contents of SiO₂ additives were investigated. The La_1.5Sr_0.5NiO₄ particles were dispersed into SiO₂ matrixes via a sol-gel process, while the homogeneous distribution was destroyed by the reaction between La_1.5Sr_0.5NiO₄ and SiO₂ during the sintering process, so the composite ceramics consisted of La_1.5Sr_0.5NiO₄, La_9.33Si₆O₂₆ and NiO phases. The dielectric constants at room temperature varied slightly, while the dielectric losses could be suppressed with a moderate amount of SiO₂ additive. Temperature-independent giant dielectric constant with low loss was achieved in the ceramics with nominal composition of La_1.5Sr_0.5NiO₄–0.80SiO₂. Based on the analysis of impedance spectra, the giant dielectric response in the composite ceramics was attributed to the combination of the small polaronic hopping and Maxwell-Wagner effect.     

Properties and crystallization kinetics of low temperature co-fired Li<Subscript>2</Subscript>O-Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-SiO<Subscript>2</Subscript> electroceramics

The glass-ceramic in the Li₂O-Al₂O₃-SiO₂ system has been prepared by melt quenching route. The crystallization kinetics was studied by differential scanning calorimetry. The effects of sintering temperature on the phase transformation, sintering behavior, bulk density, microstructure, thermal expansion, bending strength and dielectric properties were also investigated by X-ray diffractometry and scanning electron microscopy. (Li, Mg, Zn)_1.7Al₂O₄Si₆O₁₂ is the first crystalline phase forming in the glass-ceramic and transforms to LiAlSi₃O₈ phase at 800 °C. The other two crystalline phases of ZrO₂ and CaMgSi₂O₆ precipitate at 700 and 750 °C, respectively. The densification of this LAS glass-ceramic starts at around 730 °C and stops at about 805 °C. The coefficient of thermal expansion increases with the increasing sintering temperature. The sample sintered at 800 °C for 30 min exhibited excellent properties. The nonisothermal activation energy of crystallization is 149 kJ/mol and the values of Avrami constant (n) are in the range of 3.2 to 3.9. The LAS glass-ceramic sintered at 800 °C for 30 min showed excellent properties. This makes that this material suitable for a number of LTCC applications.     

Microwave Dielectric Properties of CuO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

Microwave dielectric properties of low temperature sintering ZnNb₂O₆ ceramics doped with CuO-V₂O₅-Bi₂O₃ additions were investigated systematically. The co-doping of CuO, V₂O₅ and Bi₂O₃ can significantly lower the sintering temperature of ZnNb₂O₆ ceramics from 1150 to 870C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V₂O₅-Bi₂O₃ content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant ( _r) of ZnNb₂O₆ ceramics increased from 21.95 to 24.18 with increasing CuO-V₂O₅-Bi₂O₃ additions from 1.5 to 4.0 wt%. The quality factors (Q× f) of this system decreased with increasing CuO-V₂O₅-Bi₂O₃ content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q× f values of samples with CuO-V₂O₅-Bi₂O₃ additions are lower than that of un-doped ZnNb₂O₆ ceramics sintered at 1150C for 2 h. The temperature coefficient of resonant frequency ( _f) changed from –33.16 to –25.96 ppm/C with increasing CuO-V₂O₅-Bi₂O₃ from 1.5 to 4.0 wt%     

The effect of TiO<Subscript>2</Subscript> and P<Subscript>2</Subscript>O<Subscript>5</Subscript> on densification behavior and properties of Anortite-Diopside glass-ceramic substrates

In this work the synthesis of anorthite-diopside glass-ceramics (GCs) was carried out via sintering and crystallization of glass powder compacts in the temperature interval 800°C and 950°C. Glass powder compacts with mean particle size of 2 μm were prepared. The effects of adding TiO₂ and P₂O₅ on the sintering behavior of glass powder compacts and on the properties of resultant glass-ceramics were studied. Mechanical, thermal, chemical and dielectric properties of sintered GCs were investigated with the aim to evaluate the potential of the GCs as substrate materials for microelectronics applications.     

Tunable Dielectric Characteristics of 0.9Pb(Fe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>/0.1CaTiO<Subscript>3</Subscript>

Tunable dielectric characteristics of 0.9Pb(Fe_1/2Nb_1/2)O₃/0.1CaTiO₃ relaxor ferroelectric ceramics were investigated as the function of DC bias field and temperature. High tunability (more than 20%) was obtained in the present ceramics under a relatively weak DC bias field (1.4 kV/cm). The value of tunability changed from negative to positive with increasing DC field. For the simulation of the dielectric constant under DC bias field, modified model needs to be constructed for the relaxor ferroelectrics. The dielectric constant curve as a function of temperature without and under DC field was well fitted using the equation of diffuse phase transition. The lower ε_max, higher T_max and higher diffuseness parameter under DC field were observed and only the lower ε_max contributed to positive tunability.     

Structure and properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Bi(Mg<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>-0.38PbTiO<Subscript>3</Subscript> ceramics with MPB composition

0.62Bi(Mg_1/2Ti_1/2)O₃-0.38PbTiO₃-xwt%Bi₂O₃ (BMT-0.38PT-xBi₂O₃) ceramics were prepared by conventional powder-processing method. It indicated that the morphotropic phase boundary (MPB) region located in 0.0?≤?x?≤?0.3. For x?=?0.3, it exhibited good piezoelectric properties, d₃₃ ~245pC/N and k_p ~40 %. With the increase of Bi₂O₃ content, the Curie temperature (T_c) was found to increase, and the dielectric loss was found to decrease above 200 °C compared with BMT-0.38PT sample. Finally, it can be found that depolarization temperature was around 350 °C by thermal depoling method.     

Effects of MnO<Subscript>2</Subscript> addition on microstructure and electrical properties of (Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>) <Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>TiO<Subscript>3</Subscript> ceramics

In this letter, MnO₂-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT-6) lead-free piezoelectric ceramics were synthesized by solid state reaction, and the microstructure and electrical properties of the ceramics were investigated. X-ray diffraction (XRD) reveals that all specimens take on single perovskite type structure, and the diffraction peaks shift to a large angle as the MnO₂ addition increases. Scanning electron microscopy shows that the grain sizes increases, and then decreases with increasing the MnO₂ content. The experiment results indicate that the electrical properties of ceramics are significantly influenced by the MnO₂ content, and the ceramics with homogeneous microstructure and excellent electrical properties are obtained with addition of 0.3 wt% MnO₂ and sintered at 1160°C. The piezoelectric constant (d₃₃), the electromechanical coupling factor (k _p ), the dissipation factor (tan δ) and the dielectric constant (ɛ _r ) reach 160 pC/N, 0.29, 0.026 and 879, respectively. These excellent properties indicate that the MnO₂-doped BNBT-6 ceramics can be used for actuators.     

Thermal and dielectric properties of ZnO-B2O3-MO3glasses (M = W, Mo)

Glasses in the ZnO-B₂O₃-MO₃(M = W, Mo) ternary were examined as potential replacements to PbO-B₂O₃-SiO₂-ZnO glass frits with the low firing temperature (500–600^∘C) for the dielectric layer of a plasma display panels (PDPs). Glasses were melted in air at 950–1150^∘C in a narrow region of the ternary using standard reagent grade materials. The glasses were evaluated for glass transition temperature (T _g ), softening temperature (T _d ), the coefficient of thermal expansion (CTE), dielectric constant (ε _r ), and optical property. The glass transition temperature of the glasses varied between 470 and 560^∘C. The coefficient of thermal expansion and the dielectric constant of the glasses were in the range of 5–8 × 10^{− 6}/^∘C and 8–10, respectively. The addition of MO₃to ZnO-B₂O₃binary could induce the expansion of glass forming region, the reduction of T _g and the increase in the CTE and the dielectric constant of the glasses. Also, the effect of the addition of MO₃to ZnO-B₂O₃binary on the transmittance in the visible-light region (350–700 nm) was investigated.     

Dielectric and Piezoelectric Properties of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-K<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-NaNbO<Subscript>3</Subscript>Lead-Free Ceramics

The ternary lead-free piezoelectric ceramics system of (1 – x) [0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃] – xNaNbO₃(x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) were synthesized by conventional solid state reaction method. The crystal structure, dielectric, piezoelectric properties and P-E hysteresis loops were investigated. The crystalline structure of all compositions is mono-perovskite phase ascertained by XRD, and the lattice constant was calculated from the XRD data. Temperature dependence of dielectric constant _r and dissipation factor tan measurement revealed that all compositions experienced two phase transitions: from ferroelectric to anti-ferroelectric and from anti-ferroelectric to paraelectric, and these two phase transitions have relaxor characteristics. Both transition temperatures T_d and T_m are lowered due to introduction of NaNbO₃. P-E hysteresis loops show that 0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃ ceramics has the maximum P_r and E_c corresponding to the maximum values of electromechanical coupling factor K_p and piezoelectric constant d_33. The piezoelectric constant d₃₃ and electromechanical coupling factor K_p decrease a little, while the dielectric constant ₃₃^T/₀ improves much more when the concentration of NaNbO₃ is 8 mol%.     

Influence of the processing rates and sintering temperatures on the dielectric properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics

The stoichiometric CaCu₃Ti₄O₁₂ pellets were prepared by the solid state synthesis. X-ray diffraction data revealed the tenorite CuO and cuprite Cu₂O secondary phases on the unpolished CaCu₃Ti₄O₁₂ samples regardless of the heating rates. Also, the dielectric constant marked the highest for the CaCu₃Ti₄O₁₂ sample sintered at the lowest heating rate (1°C/min), which was explained by the increased grain conductivity due to the cation reactions. On the other hand, Cu₂O phase was found only on the unpolished CaCu₃Ti₄O₁₂ sample sintered over 1100°C and those are considered as the remains reduced from the CuO phase. The higher sintering temperature showed the increased dielectric constant and the loss tangent of the CaCu₃Ti₄O₁₂ samples, and this result could be interpreted by the impedance measurement data. The relationship between the processing condition and the dielectric properties was discussed in terms of the cation non-stoichiometry and the defect chemistry in CaCu₃Ti₄O₁₂.     

Co-Precipitation Method for the Preparation of Nanocrystalline Ferroelectric SrBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> Ceramics

A simple co-precipitation technique had been successfully applied for the preparation of pure ultrafine single phase SrBi₂Nb₂O₉. Ammonium hydroxide and ammonium oxalate were used to precipitate Sr^{2 +}, Bi³⁺ and Nb⁵⁺ cations simultaneously. No pyrochlore phase was found while heating powder at 850C and pure SrBi₂Nb₂O₉ (SBN) phase was formed as revealed by the X-ray diffraction (XRD) studies. Particle size and morphology was studied by transmission electron microscopy (TEM). The room temperature dielectric constant at 1 kHz is 100. The ferroelectric hysteresis loop parameters of these samples were also studied.     

Low loss flexible SrTiO<Subscript>3</Subscript>/POE dielectric composites for microwave application

Flexible, high dielectric constant and low dielectric loss composites for microwave application fabricated with SrTiO₃ (STO) ceramic filler dispersed inside a thermoplastic polyolefin elastomer (POE) polymer matrix have been studied in this paper. The dielectric property and the mechanical property of STO/POE composites filled with different volume fraction of ceramic filler were investigated. The results indicated that with the increase volume fraction of ceramic filler, both the permittivity and the dielectric loss of composites increased. Good frequency stability within a wide range was observed in all the samples. For the composites containing 40 vol% STO, the composites has a tensile strength of 2.75 MPa with an elongation of about 90% at break value. The permittivity and the dielectric loss of the composites were 11.0 and 0.01 in microwave frequency, respectively. A microstrip transmission line on the composites containing 40 vol% STO as a microwave substrate is designed and measured after bending at different angles, meanwhile the transmission coefficients of the microstrip transmission line were unchanged when bending angle is less than 60°. This indicates that the STO/POE composites have the promising characteristics for potential applications in microwave substrate, flexible dielectric waveguide and related flexible microwave devices.     

Microwave Dielectric Characteristics of MgTiO<Subscript>3</Subscript>/CaTiO<Subscript>3</Subscript> Layered Ceramics

MgTiO₃/CaTiO₃ layered ceramics with differently stacking were fabricated and the microwave dielectric properties were evaluated with TE₀₁₁ mode. With increasing CaTiO₃ thickness fraction, the resonant frequency decreased and the dielectric constant increased with a near-linear relation for the bi-layer ceramics, while the values of the tri-layer MgTiO₃/CaTiO₃/MgTiO₃ ceramics with thickness ratio of 1:1:1 derived much from the curves of the bi-layer ceramics. The finite element method was used to give an explanation for the differences between the bi-layer and tri-layer ceramics.     

Study on Cu/ZrW2O8 composite layers prepared by co-electrodeposition

ABSTRACT

To obtain composite materials with a low coefficient of thermal expansion (CTE), Cu/ZrW₂O₈ composite layers were prepared by co-electrodeposition. The influence of the co-electrodeposition parameters on the particle content in the composite layers and the effects of particle content on the thermal expansion and microhardness of the layers were studied. In general, the addition of ZrW₂O₈ particles significantly enhanced the microhardness and reduced the CTE of the Cu/ZrW₂O₈ composite materials. The surface morphology changed with the current density and ZrW₂O₈ particle loading. Finally, the CTE of the Cu/ZrW₂O₈ composite materials was much lower than that of pure Cu.     

Effects of various oxide fillers on physical and dielectric properties of calcium aluminoborosilicate-based dielectrics

Physical and dielectric properties of LTCC (low temperature co-fired ceramics) materials based on a typical calcium aluminoborosilicate glass and various fillers such as Al₂O₃, BaTiO₃, CaTiO₃, TiO₂, ZrO₂, MgO and SiO₂ were investigated. Densification, crystallization and thermal and dielectric properties were found to strongly depend on the type of filler. The XRD patterns of Al₂O₃, BaTiO₃, CaTiO₃ and MgO samples demonstrated crystalline phases, CaAl₂Si₂O₈, BaAl₂Si₂O₈, CaTiSiO₅ and CaMgSi₂O₆, respectively, as a result of firing at 850 °C. For the sample containing CaTiO₃ filler, specifically, dielectric constant increased drastically to approximately 19.9. A high quality factor of >210 and a high TCE (temperature coefficient of expansion) of >8.5 ppm/°C were obtained for the composition containing MgO or SiO₂. Near zero TCF (temperature coefficient of frequency) was obtained for the samples containing TiO₂. The purpose of this work is to investigate the effects of various ceramic fillers on physical and dielectric properties and ultimately to provide the technical guidelines for the proper choice of filler in various LTCC systems.     

(Gd,Co, Ta)-Doped SnO<Subscript>2</Subscript> Varistor Ceramics

The effect on the microstructure and electrical properties of (Co, Ta)-doped SnO₂ varistors upon the addition of Gd₂O₃ was investigated. The threshold electric field of the SnO₂ based varistors increased significantly from 720 V/mm to 1455 V/mm, the relative dielectric constants of the SnO₂ based varistors decreased greatly from 833 to 330 as Gd₂O₃ concentration was increased up to 1.2 mol%. The significant decrease of the SnO₂ mean grain size, from 3.8 to 1.6 m with increasing Gd₂O₃ concentration over the range of 0 to 1.2 mol%, is the origin for increase in the threshold voltage and decrease of the dielectric constants. The mean grain size reduction is attributed to the segregation of Gd₂O₃ at grain boundaries hindering the SnO₂ grains from conglomerating into large particles. Varistors were found to have superhigh threshold voltage and comparatively large nonlinear coefficient . For 0.8 mol% Gd₂O₃-doped sample, threshold electrical field E and nonlinear coefficient were measured to be 1125 V/mm and 24.0, for 1.2 mol% Gd₂O₃-doped sample, E and were 1355 V/mm and 23.0. Superhigh threshold voltage and large nonlinear coefficient qualify the Gd-doped SnO₂ varistor as an excellent candidate in use for high voltage protection system.     

Structural,dielectric and magnetic properties of particulate composites of relaxor (BaTi<Subscript>0.85</Subscript>Sn<Subscript>0.15</Subscript>O<Subscript>3</Subscript>) and ferrite (NiFe<Subscript>2</Subscript>O<Subscript>4</Subscript>) synthesized by gel-combustion method

Particulate composites of (1-x) BaTi_0.85Sn_0.15O₃ – x NiFe₂O₄ (with x?=?5, 10,15 and 20 wt%) were synthesized using the solid-state reaction method by sintering at 1350 °C for 4 h. Formation of the diphase composites was confirmed by X-ray diffraction (XRD) and Fourier Transform Infra-red (FTIR) techniques. Temperature (RT-200 °C) and frequency (20 Hz- 1 MHz) dependent of AC conductivity, dielectric constant and dissipation have been studied. The dielectric constant exhibits strong frequency dispersion in the range 20 Hz-1 kHz which is attributed to Maxwell-Wagner interfacial polarization occurring at grain-grain-boundaries interface/interface of grains of BTS-NF. The M-H curve of all the composites exhibited a hysteresis loops typical charcateistic of a ferromagnetic material. The ferromagnetic ordering in the composites on account of NiFe₂O₄ as a constituent is explained using bound magnetic polarons (BMPs) model. The experimental magnetic data have been fitted to BMP model. Value of M_s is smaller, whereas of H_c and M_r are higher of the composites compared to value for NiFe₂O₄. The temperature at which divergence in the M vs. T plot in ZFC and FC starts is higher for the composites than for NiFe₂O₄.