Thermoelectric properties of Cu1−xPtxFeO2 (0.0 ≤ x ≤ 0.05) delafossite-type transition oxide

The samples of Cu_1−xPt_xFeO₂ (0 ≤ x ≤ 0.05) delafossite were synthesized by solid state reaction method for studying thermoelectric properties. The properties of Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the high temperature ranging from 300 to 960 K. The results of Seebeck coefficient, electrical conductivity and power factor were increased with increasing Pt substitution and temperature. The thermal conductivity was decreased from 5.8 to 3.5 W/mK with increasing the temperature from 300 to 960 K. An important results, the highest value of power factor and ZT is 2.0 × 10⁻⁴ W/mK² and 0.05, respectively, for x = 0.05 at 960 K.     

Preparation and electrical properties of perovskite ceramics in the system BaBi1−xSbxO3 (0 ≤ x ≤ 0.5)

The effect of the composition on the electrical properties of BaBi_1−xSb_xO₃ (0 ≤ x ≤ 0.5) negative temperature coefficient (NTC) thermistors was studied. Major phases present in the sintered bodies of BaBi_1−xSb_xO₃ (0 < x < 0.5) ceramics were BaBi_0.5Sb_0.5O₃ compounds with a rhombohedral structure and BaBiO₃ compounds with a monoclinal structure. Most pores were located in the grains of BaBiO₃ and BaBi_0.5Sb_0.5O₃ ceramics. It was apparent that the ρ₂₅ and B_25/85 constant of the thermistors increased with increasing Sb content.     

Preparation and characterization of La1−xKxFeO3 (x = 0-1) by self-propagating high-temperature synthesis for use as soot combustion catalyst

This paper proposes La_1−xK_xFeO₃ prepared by self-propagating high-temperature synthesis (SHS) as an alternative to platinum catalysts for promoting diesel soot combustion. The catalytic property of eleven products SHSed with different substitution ratios of potassium (x = 0-1) was experimentally evaluated using a thermobalance. In the mass loss curves of the product, T₅₀ was defined as the temperature at which the weight of the reference soot decreases to half its initial weight. The BET specific surface area of SHSed La_1−xK_xFeO₃ depended on x strongly. All the products showed good oxidation catalytic activity. Despite having the smallest surface area (0.11 m²/g) among the obtained products, La_0.9K_0.1FeO₃ (x = 0.1) was found to be the best catalyst with the lowest T₅₀ (442 °C). T₅₀ of La_1−xK_xFeO₃ decreased with increasing x for x > 0.2. The products with x = 0.6 and 0.8 were the second-best catalysts in terms of their T₅₀. Moreover, average apparent activation energy of La_0.9K_0.1FeO₃ (x = 0.1) calculated by Friedman method using TG was as much as 61 kJ/mol lower than that of Pt/Al₂O₃ catalyst. In conclusion, potassium-substituted SHSed La_1−xK_xFeO₃ can be used as an alternative to Pt/Al₂O₃ for soot combustion.     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Effect of the sintering temperature on the properties of nanocrystalline Ca1−xSmxMnO3 (0 ≤ x ≤ 0.4) powders

Nanocrystalline Ca_1−xSm_xMnO₃ (0 ≤ x ≤ 0.4) manganites were prepared by a soft chemical method (Pechini method) followed by auto-combustion and sintering in air at 1073 or 1473 K. Single-phase powders with general composition Ca_1−xSm_xMnO₃ were obtained after 18 h annealing. The particle and grain sizes of the substituted Sm-manganites did not exhibit variation with samarium content, but increase with increasing the sintering temperature. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹ characteristic of the BO₆ octahedron vibrations.For the samples sintered at T_s = 1473 K, the partial substitution of calcium by samarium in the CaMnO₃ phase induces a marked decrease in the electrical resistivity, in the temperature range of 300-900 K, and at the same time a metal-to-insulator transition occurs; for T_s = 1073 K all the samples present semiconductor behaviour. With the increase of the annealing temperature the grain size increases and a metal-semiconductor transition appears. The results can be ascribed to the Mn⁴⁺/Mn³⁺ ratio and particle grain size. The effects of particle size on the electrical properties can be attributed to the domain status, changes in the Mn-O-Mn bond angle and Mn-O bond length.     

Anisotropy compensation and high low-field magnetostriction of epoxy/Tb1−xHox(Fe0.8Co0.2)2 composites (0.60 ≤ x ≤ 1.0)

The anisotropy compensation and magnetostrictive properties of Tb_1−xHo_x(Fe_0.8Co_0.2)₂ (0.60 ≤ x ≤ 1.0) alloys have been investigated. The easy magnetization direction (EMD) at room temperature rotates from the 〈1 1 1〉 axis (x ≤ 0.75) to the 〈1 0 0〉 axis (x ≥ 0.90) through an intermediate state 〈1 1 0〉, subjected to the anisotropy compensation between Tb³⁺ and Ho³⁺ ions. Composition anisotropy compensation is realized near x = 0.75. The Tb_0.25Ho_0.75(Fe_0.8Co_0.2)₂ alloy has a minimum anisotropy and a large spontaneous magnetostriction coefficient λ₁₁₁ (≈740 ppm) at room temperature. The strong 〈1 1 1〉-oriented 1-3 epoxy-bonded composite has been fabricated by curing under a moderate magnetic field. A high low-field magnetostriction of about 400 ppm at 3 kOe is obtained for the 1-3 epoxy/Tb_0.25Ho_0.75(Fe_0.8Co_0.2)₂ composite with 40-vol% alloy particles, which can be attributed to the low magnetic anisotropy, EMD lying along 〈1 1 1〉 direction, the strong 〈1 1 1〉-textured orientation and the chain structure.     

Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Bi₂Se_xTe_3−x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 × 10⁵ S m⁻¹ at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h⁻¹. The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K⁻¹ at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m⁻¹ K⁻¹ at x = 0.36. The electronic part of κ, κ_el, showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.     

Photoluminescent properties of LiSrxBa1−xPO4:RE (RE = Sm, Eu) f-f transition phosphors

Rare-earth ions (Sm³⁺ or Eu³⁺) doped LiSr_xBa_1−xPO₄ (x = 0, 0.2, 0.4, 0.6, 0.8, 1.0) f-f transition phosphor powders were prepared by a high temperature solid-state reaction. The resulted phosphors were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The results of XRD indicate that the phase structure of the sample changes from LiBaPO₄ to LiSrPO₄ when x changes from 0 to 1.0. The excitation spectra indicate that only direct excitation of rare earth ions (Sm³⁺ or Eu³⁺) can be observed. The doped rare earth ions show their characteristic emission in LiSr_xBa_1−xPO₄, i.e., Eu³⁺⁵D₀-⁷F_J (J = 0, 1, 2, 3, 4), Sm³⁺⁴G_5/2 → ⁶H_J (J = 5/2, 7/2, 9/2, 11/2), respectively. The dependence of the emission intensities of the LiSr_xBa_1−xPO₄:Sm³⁺ and LiSr_xBa_1−xPO₄:Eu³⁺ phosphors on the x value and Ln³⁺ (Ln³⁺ = Sm³⁺, Eu³⁺) concentration is also investigated.     

CuIn1−xAlxS2 thin films prepared by sulfurization of metallic precursors

CuIn_1−xAl_xS₂ thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu-In-Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS₂ to {a = 5.30 Å, c = 10.36 Å} for CuAlS₂. No unwanted phases such as Cu_2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A₁ phonon frequency varied nonlinearly from 294 cm⁻¹ (CuInS₂) to 314 cm⁻¹ (CuAlS₂).     

Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Characterization and blood compatibility of TiCxN1 − x hard coating prepared by plasma electrolytic carbonitriding

A novel technique to form Ti(C, N) on titanium, named as plasma electrolytic carbonitriding (PEC/N) on cathode was successful used to prepare TiC_xN_1 − x coating. The structure, composition and morphology of the coating were characterized by XRD, XPS and SEM, respectively. The results indicated that TiC_0.3N_0.7 as a new species appears on the surface of the titanium plate, and the thickness of the coating with porous surface morphology increases with the treated time. The blood compatibility of the TiC_0.3N_0.7 coating was evaluated by haemolysis ratios, dynamic blood clotting test, plasma recalcification time and platelet adhesion. The results indicated that the blood compatibility of the plasma-treated titanium with TiC_xN_1 − x coating is significantly improved as compared to the original titanium. Additionally, the results derived from measurements of hardness and corrosion indicated that the coating has excellent mechanical and corrosion-resistant properties.     

Part II. Large scale applications of NixMn0.8−xMg0.2Fe2O4; 0.1 ≤ x ≤ 0.35 using laser irradiation

Ni_xMn_0.8−xMg_0.2Fe₂O₄; 0.1 ≤ x ≤ 0.35 was prepared by standard ceramic technique at sintering temperature 1200 °C using heating / cooling rate 4 °C/min. The samples were irradiated by Nd YAG pulsed laser with energy of the pulse 250 mJ. X-ray diffractograms reveal cubic spinel structure for all the samples before and after laser irradiation. After laser irradiation, better crystallinity was obtained in a form of an increase in the calculated crystal size. This increase was discussed as due to the change in the valence of some ions like Fe³⁺, Ni²⁺ and Mn²⁺. The conductivity of all the investigated samples decreases after laser irradiation and becomes temperature independent for a wider range than that before irradiation. This was ascribed to electron rearrangement after laser irradiation. Accordingly, these ferrites are recommended to be useful in electronic devices.     

Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

Cd_1−xZn_xS (0 ≤ x ≤ 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 ± 5 °C and after annealed at 350 °C. The structural, morphological, compositional and optical properties of the deposited Cd_1−xZn_xS thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd_1−xZn_xS thin films was hexagonal structure. For x > 0.6, however, the Cd_1−xZn_xS films were grown with cubic structure. Annealing the samples at 350 °C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd_1−xZn_xS films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.     

Effect of the impurity LixNi1−xO on the electrochemical properties of 5 V cathode material LiNi0.5Mn1.5O4

The formation of impurity Li_xNi_1−xO when synthesizing spinel LiNi_0.5Mn_1.5O₄ using solid state reaction method, and its influence on the electrochemical properties of product LiNi_0.5Mn_1.5O₄ were studied. The secondary phase Li_xNi_1−xO emerges at high temperature due to oxygen deficiency for LiNi_0.5Mn_1.5O₄ and partial reduction of Mn⁴⁺ to Mn³⁺ in LiNi_0.5Mn_1.5O₄. Annealing process can diminish oxygen deficiency and inhibit impurity Li_xNi_1−xO. The impurity reduces the specific capacity of product, but it does not have obvious negative effect on cycle performance of product. The capacity of LiNi_0.5Mn_1.5O₄ that contains Li_xNi_1−xO can deliver about 120 mAh g⁻¹.     

Infrared emissivities and microwave absorption properties of perovskite Sm0.5Sr0.5Co1−xFexO3 (0 ≤ x ≤ 0.5)

Sm_0.5Sr_0.5Co_1−xFe_xO₃ (0 ≤ x ≤ 0.5, SSCF) with perovskite-type structure has been successfully prepared by conventional solid-state reaction as a microwave and infrared multi-functional material. The effects of Fe incorporation on the structure, electrical conductivity, infrared emissivity and microwave-absorbing properties were investigated in detail. XRD results have shown that the perovskite structure of SSCF has an orthorhombic symmetry for 0 ≤ x ≤ 0.4 and a cubic symmetry for 0.5, respectively. The incorporation of Fe in SSCF could contribute to the decrease of electrical conductivity, while the infrared emissivities are increased. Moreover, microwave-absorbing properties in the frequency range of 2-18 GHz at room temperature are sensitive to Fe content. The complex permittivity, complex permeability and electromagnetic loss tangent have suddenly a step change at a certain frequency and the step-change frequency position moves slightly to lower frequencies with Fe increased. The optimal reflection loss calculated from the measured permittivity and permeability is 29.33 dB at 7.97 GHz with a thickness of 2.0 mm.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Structural, elastic and electronic properties of Mg(Cu1−xZnx)2 alloys calculated by first-principles

The structural, elastic and electronic properties of Mg(Cu_1−xZn_x)₂ alloys (x = 0, 0.25, 0.5,and 0.75) were investigated by means of first-principle calculations within the framework of density functional theory (DFT). The calculation results demonstrated that the partial substitution of Cu with Zn in MgCu₂ leaded to an increase of lattice constants, and the optimized structural parameters were in very good agreement with the available experimental values. From energetic point of view, it was found that with increase of Zn content the structural stability of Mg(Cu_1−xZn_x)₂ alloys decreased apparently. The single-crystal elastic constants were obtained by computing total energy as a function of strain, and then the bulk modulus B, shear modulus G, Young's modulus Y and Poisson's ratio ν of polycrystalline aggregates were derived. The calculated results showed that among the Mg(Cu_1−xZn_x)₂ alloys, MgCuZn exhibited the largest stiffness, while Mg₂Cu₃Zn showed the best ductility. Finally, the electronic density of states (DOSs) and charge density distribution were further studied and discussed.     

Room temperature electroresistance in Sr2−xGdxMnTiO6 perovskites (0 ≤ x ≤ 1)

We report on the room temperature strong (∼80%) electroresistance (ER) in the double perovskite with mixed Mn valence: Sr_2−xGd_xMnTiO₆, 0 ≤ x ≤ 1. Both, continuous and pulsed current-voltage curves are almost identical which indicates that the observed electroresistance is not associated with heating. This is also supported by simultaneous temperature measurements. ER is negligible (absent) in the x = 0 compound and increases with the increase of Gd content ‘x’. The amplitude of ER has a maximum for x = 0.75, suggesting that ER is determined by both the double exchange and the Mn³⁺ concentration. At the same time, magnetic interactions change from the antiferromagnetic (x = 0) to ferromagnetic ones as x → 1, thus linking the ER with ferromagnetism.     

Resistivity, thermopower, and thermal conductivity of nickel doped compounds Cr1−xNixSb2 at low temperatures

Substitutional compounds Cr_1−xNi_xSb₂ (0 ≤ x ≤ 0.1) were synthesized, and the effect of Ni substitution on transport and thermoelectric properties of Cr_1−xNi_xSb₂ were investigated at the temperatures from 7 to 310 K. The results indicated that the magnitudes of the resistivity and thermopower of Cr_1−xNi_xSb₂ decreased greatly with increasing Ni content at low temperatures, owing to an increase in electron concentration caused by Ni substitution for Cr. Experiments also showed that the low-temperature lattice thermal conductivity of Cr_1−xNi_xSb₂ decreased substantially with increasing Ni content due to an enhancement of phonon scattering by the increased number of Ni atoms. As a result, the figure of merit, ZT, of lightly doped Cr_0.99Ni_0.01Sb₂ was improved at T > ∼230 K. Specifically, the ZT of Cr_0.99Ni_0.01Sb₂ at 310 K was approximately ∼29% larger than that of CrSb₂, indicating that thermoelectric properties of CrSb₂ can be improved by an appropriate substitution of Ni for Cr.