Effects of thermal treatment on the characteristics of boron and tantalum-doped ZnO thin films deposited by the electrospraying method at atmospheric pressure

Metal-doped (B and Ta) ZnO thin films were deposited by the electrospraying method onto a heated glass substrate. The structural, electrical and optical properties of the films were investigated as a function of dopant concentration in the solution and also as a function of annealing temperature. The results show that all the prepared metal-doped ZnO films were polycrystalline in nature with a (0 0 2) preferred orientation. As the amounts of dopant were increased in the starting solution, the crystallinity and transmittance decreased. On the other hand, heat treatment of the films enhanced the transmittance, Hall mobility, carrier concentration and crystallinity. It was also observed that 2 at.% is the optimal doping amount in order to achieve the minimum resistivity and maximum optical transmittance. As-deposited films have high resistivity and low optical transmittance. The annealing of the as-deposited thin films in air resulted in the reduction of resistivity. Depending on the characteristics of dopant, mainly ionic radius, the effects of dopant were studied on the properties of ZnO thin films. Boron and tantalum have been considered as dopants, tantalum being the superior of the two, since it showed the lower resistivity and higher carrier concentration as well as higher mobility. The minimum value of resistivity was 1.95 × 10^− 4 Ω cm (15 Ω/□) with an optical transmittance more than 93% in the visible region and minimum resistivity of 2.16 × 10^− 4 Ω cm (18 Ω/□) with an optical transmittance greater than 96% for 2 at. % tantalum- and boron-doped ZnO films respectively. The present values of resistivities were closer to the indium tin oxide (ITO) resistivity and also closest to the lowest resistivity values among the ZnO films that were previously reported. The prepared films exhibit the good crystalline structure, homogenous surface, high optical transmittance and low resistivity that are preferable for optical devices.     

Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films

Gallium-doped ZnO (GZO) semiconductor thin films were prepared by a sol-gel spin coating process. The effects of Ga dopant concentrations on the microstructure, electrical resistivity, optical properties, and photoluminescence (PL) were studied. XRD results showed that all the as-prepared GZO films had a wurtzite phase and a preferred orientation along the [0 0 2] direction. ZnO thin films doped with Ga had lower electrical resistivity, lower RMS roughness, and improved optical transmittance in the visible region. The lowest average electrical resistivity value, 2.8 × 10² Ω cm, was achieved in the ZnO thin films doped with 2% Ga, which exhibited an average transmittance of 91.5%. This study also found that the optical band gap of Ga-doped films was 3.25 eV, slightly higher than that of undoped samples (3.23 eV), and the PL spectra of GZO films showed strong violet-light emission centers at about 2.86 eV (the corresponding wavelength of which is about 434 nm).     

溶胶-凝胶法制备Y2O3掺杂ZnO压敏薄膜及其电性能（英文）

研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。     

Sol–gel synthesis of Y2O3-doped ZnO thin films varistors and their electrical properties

Y₂O₃-doped ZnO–Bi₂O₃ thin films were fabricated on silicon substrates by sol–gel process and annealed in air at 750 °C for 1 h. Microstructure and electrical properties of ZnO thin films were investigated. XRD analysis shows that all peaks of ZnO thin films are well matched with hexagonal wurtzite structure of ZnO. SEM results present that the ZnO grain size decreases with the increase of dopant concentration, which means that rare earth doped can refine the grain size. The thickness of each layer is uniform and the value of thickness is about 80 nm. The nonlinear V–I characteristics with the leakage current of 0.46 μA, the threshold field of 110 V/mm and the nonlinear coefficient of 3.1 could be achieved when the films contain 0.2% (mole fraction) yttrium ion.     

Effects of Annealing Temperature on the Structural,Optical,and Electrical Properties of ZnO Thin Films Grown on n-Si<100>Substrates by the Sol–Gel Spin Coating Method

The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2:1 10 2to 8:1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.     

溶胶pH值对氢化锆表面阻氢膜层性能的影响

目的采用溶胶-凝胶法在氢化锆表面制备氧化锆阻氢膜层,探究溶胶p H值对阻氢膜层性能的影响。方法以正丙醇锆为前驱体,通过滴加盐酸分别得到p H值为1、3、5、7、9的溶胶。利用扫描电子显微镜(SEM)、激光共聚焦显微镜(CLSM)和X射线衍射仪(XRD),分析了氧化锆膜层的截面形貌、表面形貌和物相组成,并利用真空脱氢实验测试了膜层的阻氢性能。结果溶胶p H值影响溶胶的涂覆性能,致使氢化锆基体表面所得膜层的连续性、均匀性及厚度存在差异。溶胶pH值的变化对形成膜层的物相组成没有显著影响,所得膜层由单斜相氧化锆(m-ZrO2)和四方相氧化锆(t-ZrO_2)组成。当p H值在1～9范围内时,随着溶胶pH的增加,膜层中t-ZrO_2的体积分数和PRF值均呈现出先升高后降低的变化趋势,t-ZrO_2的体积分数介于13.16%～46.84%之间,膜层的PRF值介于10.13～19.46之间。结论溶胶pH值影响溶胶的涂覆性能,进而影响膜层质量、膜层中各物相的含量以及膜层的阻氢效果。当溶胶p H值为3时,溶胶涂覆性能良好,所得氧化锆膜层均匀、连续,膜层较厚且致密,膜层中t-ZrO_2的体积分数最大,为46.84%,同时膜层的氢渗透降低因子(PRF值,Permeation Reduction Factor)达到最大值19.46。     

Absorption-emission study of hydrothermally grown Al:ZnO nanostructures

The preparation, structural characterization and optical properties of aluminum doped ZnO (Al:ZnO) nanostructures grown under hydrothermal method are reported. One-dimensional (1-D) growth is achieved by the controlled addition of metal nitrate as precursors in the presence of long chain surfactant, poly-ethylene glycol (PEG) at 160 °C for 20 h. The as-synthesized ZnO rods are single crystalline, exhibiting an oriented growth along [001] direction. The Al6 rod has an aspect ratio of 3.2, which can be effectively applied in optoelectronic devices. Comprehensive structural analysis using X-ray diffraction method (XRD) and Energy dispersive X-ray analysis (EDX) indicate that the dopant Al atom occupies Zn sites in ZnO and the elemental composition of Al is consistent with the amount utilized in the hydrothermal synthesis. XRD shows that the Al:ZnO nanostructures from 1 to 9 atomic percent (at.%) has hexagonal wurtzite structure of ZnO. The Al dopant effects on lattice vibration and electronic transitions of the ZnO nanostructures have been investigated by Fourier transform Infrared spectroscopy (FT-IR), Ultraviolet-visible (UV-vis) absorption spectroscopy and photoluminescence (PL) emission recorded at room temperature. The correlation existing between absorption and emission study tell that their characteristic band edge peak of doped ZnO shifts towards higher wavelength side for 3-9 at.% with respect to Al0 thus, exhibiting a red shift phenomenon with decrease in optical bandgap. The observed PL reveals two emission peaks centered at 374 nm and 530 nm. The near band edge (NBE) to defect emission ratio increases with dopant concentration indicating the linear enhancement in crystal quality and declination in zinc vacancies from 3 to 9 at.% of Al.     

New process for synthesis of ZnO thin films: Microstructural, optical and electrical characterization

Nanocrystalline ZnO thin films were prepared on glass substrates by using spin coating technique. The effect of annealing temperature (400-700 °C) on structural, compositional, microstructural, morphological, electrical and optical properties of ZnO thin films were studied by X-ray diffraction (XRD), Energy dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM), High Resolution Transmission Microscopy (HRTEM), Scanning Electron Microscopy (SEM), Electrical conductivity and UV-visible Spectroscopy (UV-vis). XRD measurements show that all the films are nanocrystallized in the hexagonal wurtzite structure and present a random orientation. The crystallite size increases with increasing annealing temperature. These modifications influence the optical properties. The AFM analysis revealed that the surface morphology is smooth. The HRTEM analysis of ZnO thin film annealed at 700 °C confirms nanocrystalline nature of film. The SEM results shows that a uniform surface morphology and the nanoparticles are fine with an average grain size of about 40-60 nm. The dc room temperature electrical conductivity of ZnO thin films were increased from 10⁻⁶ to 10⁻⁵ (Ω cm)⁻¹ with increase in annealing temperature. The electron carrier concentration (n) and mobility (μ) of ZnO films annealed at 400-700 °C were estimated to be of the order of 4.75-7.10 × 10¹⁹ cm⁻³ and 2.98-5.20 × 10⁻⁵ cm² V⁻¹ S⁻¹.The optical band gap has been determined from the absorption coefficient. We found that the optical band gap energy decreases from 3.32 eV to 3.18 eV with increasing annealing temperature between 400 and 700 °C. This means that the optical quality of ZnO films is improved by annealing.It is observed that the ZnO thin film annealing at 700 °C has a smooth and flat texture suited for different optoelectronic applications.     

The effect of substrate bias voltage on PbTe films deposited by magnetron sputtering

The PbTe films were deposited onto ITO glass substrate by radio frequency magnetron sputtering. Effect of external direct current electrical field applied between substrate and target on the quality of films was investigated. Stylus surface profile, X-ray diffraction (XRD), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR) were used to characterize the films. The film thickness was measured by a conventional stylus surface profile. The crystal structure and lattice parameters of films were determined by using XRD. The surface morphology of the films was measured by AFM. The absorption coefficients and optical band gaps of films were found from FTIR. The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated. All the obtained films were highly textured with a strong (2 0 0) orientation. With increasing bias voltage to −30 V, the property of crystal structure, surface morphology and absorption coefficients and resistivity were improved. However, further increase of substrate bias leads to transformation of the property.     

Conductive and transparent Bi-doped ZnO thin films prepared by rf magnetron sputtering

Bi-doped ZnO thin films were grown on glass substrates by ratio frequency (rf) magnetron sputtering technique and followed by annealing at 400 °C for 4 h in vacuum (~ 10^− 1 Pa). The effect of argon pressure on the structural, optical, and electrical properties of the Bi-doped films were investigated. The XRD patterns show that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. Some excellent properties, such as high transmittance (about 85%) in visible region, low resistivity value of 1.89 × 10^− 3 W cm and high carrier density of 3.45 × 10²⁰ cm^− 3 were obtained for the film deposited at the argon pressure of 2.0 Pa. The optical band gap of the films was found to increase from 3.08 to 3.29 eV as deposition pressure increased from 1 to 3 Pa. The effects of post-annealing treatments had been considered. In spite of its low conductivity comparing with other TCOs, Bi-doping didn't appreciably affect the optical transparency in the visible range of ZnO thin films.     

Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol–gel spin coating technique

In this work, the spin coating sol–gel technique has been successfully used to deposit highly uniform and good adhesion of nano structure thin films of ZnO doped with different Ni concentrations. The morphological properties of ZnO:Ni films were studied by atomic force microscopy (AFM) technique. The surface morphology of the nanostructure films is found to depend on the concentration of Ni. The effects of Ni contents on the structural and photoluminescence (PL) properties of ZnO films were investigated. Optical constants (refractive index, n, and absorption index, k) of the undoped and Ni-doped ZnO of 0.2%, 0.4%, 0.6%, 0.8%, 1%, 3%, 5% and 7% concentrations have been obtained in the wavelength range 200–1000 nm by using spectrophotometric measurements. The dispersion parameters were determined and discussed based on the single oscillator model.     

Influence of growth temperature on the optical and structural properties of ultrathin ZnO films

This study investigates the effect of growth temperature on the optical and structural properties of ultrathin ZnO films on the polished Si substrate. Thickness of the ultrathin ZnO films deposited by atomic layer deposition (ALD) method was about 10 nm. Photoluminescence (PL), X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques were used to measure the properties of ultrathin ZnO films. Experimental results showed that the ultrathin ZnO film deposited at 200 °C had excellent ultraviolet emission intensity, and the average roughness of the film surface was about 0.26 nm.     

Spray deposition of CuInS2 on electrodeposited ZnO for low-cost solar cells

CuInS₂ (CIS) thin films are deposited using chemical spray pyrolysis on top of a single (compact) and a double (compact + porous) ZnO film obtained by electrodeposition by changing the composition, pH and temperature of the bath. Conductive glass has been used as primary substrate. CIS films are deposited at 300 °C and using N₂ as carrier. A buffer layer of TiO₂ is incorporated by spray to protect the ZnO layer against dissolution during the subsequent spraying of CIS. Relevant properties, such as morphology, composition and thickness are evaluated using SEM, EDX and XRD. Also, UV-Vis analyses are carried out to assess the band gap value of CIS, resulting in 1.42 eV. Carrier densities and flat band potentials (V_fb) are calculated from Mott-Schottky plots. The values of V_fb are 0.70, 1.10 and 0.42 V for TiO₂, ZnO and CIS respectively. I-V curves in the dark and under illumination prove that the materials can be combined to obtain solar cells. The dark response for the two devices built with single and double layers of ZnO is very similar, showing diode behavior with good rectification ratios. Under illumination, the presence of the porous ZnO improves the performance of the cell, as reflected by the higher values of photocurrent and open circuit potential.     

Boron and fluorine doped ZnO films obtained from zinc chloride precursor via chemical spray pyrolysis

Both boron (1, 2 and 3 at %) and fluorine (1, 3, 5 and 7 at %) doped zinc oxide thin films (ZnO:B:F) were fabricated using zinc chloride precursor by airbrush spray pyrolysis technique on glass substrates. X-ray diffraction (XRD) measurements show that all ZnO:B:F films have hexagonal wurtzite structure with a preferential growth along the [0 0 2] direction on glass substrates. Scanning electron microscope (SEM) results show that the morphologies of all doped films have a regular hexagonal shape. The optical measurements reveal that ZnO:B:F films have a direct band gap and optical energy gaps are increasing with boron and fluorine concentration. The optical transmittance of B and F doped ZnO films is measured very low due to columnar structure of prepared films. Moreover, it has been observed that the doping of ZnO films with boron and fluorine decreases the electrical resistance, and the lowest resistances of films were observed at 1%B–3%F and 2%B–3%F concentrations.     

Surface morphology and photoluminescence properties of ZnO thin films obtained by PLD

ZnO thin films on Si(111) substrate were deposited by laser ablation of Zn target in oxygen reactive atmosphere, Nd-YAG laser with wavelength of 1 064 nm was used as laser source. XRD and FESEM microscopy were applied to characterize the structure and surface morphology of the deposited ZnO films. The optical properties of the ZnO thin films were characterized by photoluminescence. The UV and deep level (yellow-green) light were observed from the films. The UV light is the intrinsic property and deep level light is attributed to the existence of antisite defects (Ozn). The intensity of UV and deep level light depends strongly on the surface morphology and is explained by the surface roughness of ZnO film. A strongly UV emission can be obtained from ZnO film with surface roughness in nanometer range.     

In doped ZnO thin films

ZnO thin films were deposited by ultrasonic spray technique, zinc acetate was used as starting solution with a molarity of 0.1 M. A set of indium (In) doped ZnO (between 2 and 8 wt%) thin films were grown on glass substrate at 350 °C. The present work is focused on the influence of the doping level on the structural, optical and electrical films properties. Optical film characterization was carried by using UV-visible transmission spectroscopy, the optical gap was deduced from absorption. From X ray diffraction (XRD) analysis, we have deduced that ZnO films are formed with nanocrystalline structure with preferential (0 0 2) orientation. The grain size is increased with In doping from 28 to 37 nm. Electrical characterization was achieved using two-probes coplanar structure, the measured conductivity varies from 2.3 to 5.9 Ω cm⁻¹ when increasing the doping level. However the optical gap is reduced from 3.4 to 3.1 eV.     

Structural,optical properties and optical modelling of hydrothermal chemical growth derived ZnO nanowires

ZnO nanowire films were produced at 90 °C using a hydrothermal chemical deposition method, and were characterised with scanning electron microscopy, optical transmission spectrometry and X-ray diffraction. The results showed that the optical band gap is 3.274–3.347 eV. Film porosity and microstructure can be controlled by adjusting the pH of the growth solution. ZnO nanowire films comprise a 2-layer structure as demonstrated by SEM analysis, showing different porosities for each layer. XRD analysis shows preferential growth in the (002) orientation. A comprehensive optical modelling method for nanostructured ZnO thin films was proposed, consisting of Bruggeman effective medium approximations, rough surface light scattering and O'Leary-Johnson-Lim models. Fitted optical transmission of nanostructured ZnO films agreed well with experimental data.     

Effect of substrate temperature on microstructural and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on n-Si （111） at various substrate temperatures by pulsed laser deposition （PLD）. X-ray diffraction （XRD）, photoluminescence （PL）, Fourier transform infrared spectrophotometer （FTIR）, and scanning electron microscopy （SEM） were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.     

Sol-gel derived Li-Mg co-doped ZnO films: Preparation and characterization via XRD, XPS, FESEM

Li-Mg co-doped ZnO films have been deposited onto glass substrates by sol-gel spin coating method. The structural and morphological properties of the films were characterized by X-ray diffractometer (XRD), X-ray photo-electron spectroscopy (XPS) and field emission scanning electron microscopy (FESEM). The XRD spectra indicated that the films have polycrystalline nature. The crystallite size values decreased with the increasing Mg content. The chemical composition of the Li-Mg co-doped ZnO films were confirmed by XPS. Additionally, XPS results clearly showed the existence of Mg as a doping element into ZnO crystal lattice. The surface morphology of the films was found to depend on the concentration of Mg in the ZnO:Li. The absorption band edge values of the films were calculated and these values of the films increased with increasing Mg concentration. The refractive index dispersion curves of the films obeyed the single-oscillator model. The dispersion parameters such as E_o (single-oscillator energy) and E_d (dispersive energy) of the films were determined and increase with Mg content.     

Preparation and optical characteristics of ZnO films by chelating sol-gel method

The effect of different annealing temperatures on the structure, morphology, and optical properties of ZnO thinf ilms prepared by the chelating sol-gel method was investigated. Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absolute ethanol, and citric acid were used as precursor, solvem, and chelating agent, respectively. The results show that ZnO films derived flom zinc-citrate have lower crystallization temperature (below 400℃),and that the crystal structure is wurtzite. The films, treated over 500℃, consist of nano-pardcles and show to be porous at 600℃. The particle size of the film increases with the increase of the annealing temperature. The largest particle size is 60 nm at 600℃. The optical transmittances related to the annealing temperatures become 90% higher in the visible range. The film shows a stalting absorption at 380 ran, and the optical band-gap of the thin film (fired at 500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV).