Synthesis and properties of AgTi<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>-based NASICON-type phosphates doped with Nb<Superscript>5+</Superscript>, Zr<Superscript>4+</Superscript>, and Ga<Superscript>3+</Superscript>

We have synthesized materials based on a silver titanium phosphate with partial substitution of tri-, tetra-, or pentavalent cations for titanium: Ag_1±x Ti_2−x M _x (PO₄)₃ (M = Nb⁵⁺, Ga³⁺) and AgTi_2−x Zr _x (PO₄)₃. The materials have been characterized by X-ray diffraction and impedance spectroscopy and have been shown to have small thermal expansion coefficients. Their ionic conductivity has been determined. Silver ions in these materials are difficult to replace with protons.     

Influence of Mg<Superscript>2+</Superscript>/Ga<Superscript>3+</Superscript> doping on luminescence of Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Ce<Superscript>3+</Superscript> phosphors

Mg²⁺/Ga³⁺ doped Y₃Al₅O₁₂:Ce³⁺ phosphors were synthesized through a solid state reaction. The phase and luminescent of the synthesized phosphors were investigated. For Ga³⁺ codoped Y_2.96Ce_0.04Al_(5?x)Ga_xO₁₂ phosphors, the emission intensity increases with the increase of Ga³⁺ concentration up to Y_2.96Ce_0.04Al_4.80Ga_0.20O₁₂ and then decreases with a further increase of Ga³⁺ concentration, but the emission peak shifts to shorter wavelength continuously in the Ga³⁺ doping concentration range of 0.05–0.25. For Mg²⁺/Ga³⁺ codoped Y_2.96Ce_0.04Al_(4.8?y)Ga_0.20Mg_yO₁₂ phosphors, the emission intensity decreases and the emission peak shifts to longer wavelength continuously in the Mg²⁺ doping concentration range of 0.02–0.12. The emission spectra of Y_2.96Ce_0.04Al_(4.8?y)Ga_0.20Mg_yO₁₂ phosphors demonstrate that the codoped Mg²⁺/Ga³⁺ ions not only induce the enhancement of Y_2.96Ce_0.04Al₅O₁₂ emission intensity but also lead to the red shift of Y_2.96Ce_0.04Al₅O₁₂ emission peak. The decay lifetimes decrease in Mg²⁺/Ga³⁺ codoped Y_2.96Ce_0.04Al₅O₁₂ phosphors due to defects formed by substitutions of Y³⁺ by Mg²⁺/Ga³⁺.     

New forms of In<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> prepared by reacting InAs and GaAs substrates with selenium

Ga₂Se₃ and In₂Se₃ prepared through heterovalent substitution during thermal annealing of single-crystal gallium arsenide and indium arsenide substrates in selenium vapor in a quasi-closed system have been characterized by electron diffraction, scanning electron microscopy, and X-ray microanalysis. Cubic phases of In₂Se₃ (a ₀ = 1.1243 nm and a ₀ = 1.6890 nm) and Ga₂Se₃ (a ₀ = 1.0893 nm and a ₀ = 1.6293 nm) have been identified for the first time.     

Phase conversion and spectral properties of long lasting phosphor Zn<Subscript>3</Subscript> (PO<Subscript>4</Subscript>)<Subscript>2</Subscript>:Mn<Superscript>2+</Superscript>, Ga<Superscript>3+</Superscript>

A red long lasting phosphor Zn₃(PO₄)₂:Mn²⁺,Ga³⁺ (ZPMG) was prepared by ceramic method, and phase conversion and spectral properties were investigated. Results indicated that the phase conversion from α-Zn₃(PO₄)₂, β-Zn₃(PO₄)₂ toγ-Zn₃(PO₄)₂ occurs with different manganese concentration incorporated and sinter process. The structural change induced by the phase transformation results in a remarkable difference in the spectral properties. The possible luminescence mechanism for this red LLP with different forms has been illustrated.     

Co-precipitation method for the preparation of ferroelectric CaBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript>

A simple co-precipitation technique has been successfully applied for the preparation of pure single phase CaBi₄Ti₄O₁₅ (CBT) powders. Ammonium oxalate and ammonium hydroxide were used to precipitate Ca²⁺, Bi³⁺ and Ti⁴⁺ cations simultaneously. No pyrochlore phase was found while heating powder at 600 C and pure CBT phase was found to be formed by X-ray diffraction. Particle size and morphology was studied by transmission electron microscopy (TEM). The room temperature dielectric constant at 1 kHz is 400. The ferroelectric hysteresis loop parameters of these samples were also studied.     

Large enhancement of upconversion luminescence in Er<Superscript>3+</Superscript>/In<Superscript>3+</Superscript>:Ba<Subscript>0.85</Subscript>Ca<Subscript>0.15</Subscript>TiO<Subscript>3</Subscript> lead-free piezoelectric ceramics

A series of In³⁺-doped Ba_0.85Ca_0.15TiO₃:0.75%Er³⁺/xIn³⁺ (BCT:Er/xIn) lead-free piezoelectric ceramics with excellent upconversion luminescence were synthesized by the solid state reaction method. The effects of In³⁺ content on the crystal structure, ferroelectric, dielectric, piezoelectric, and upconversion luminescence properties were systematically studied. Under 980 nm excitation, a giant enhancement of the green emission (550 nm) by 10 times is achieved upon 2.5% mol In³⁺ doping, which is rarely observed in rare-earth ions-doped perovskite ferroelectric materials. The ultraviolet-visible-near infrared absorption measurements show that the In³⁺ doping may improve the dissolution of Er³⁺ ions and modify the isolate-/clustered-Er³⁺ ratio for x?≤?2.5%, resulting in the enhancement of the absorption cross-section, thereby contributing to the enhancement of green luminescence. Unfortunately, the In³⁺ doping suppresses the ferroelectric and piezoelectric properties of the BCT:Er/xIn ceramics. This problem can be resolved by adding a small amount (1 mol%) of Yb³⁺ to the BCT:Er/xIn ceramics to restore their good ferroelectric and piezoelectric properties. Such In³⁺ and rare-earth ions co-doped ceramics with greatly enhanced upconversion luminescence and good ferroelectricity and piezoelectricity may have potential applications in electro-optical devices.     

Synthesis,structural, photoluminescence and mechanoluminescence properties of Tb<Superscript>3+</Superscript>: Ca<Subscript>2</Subscript>Gd<Subscript>2</Subscript>W<Subscript>3</Subscript>O<Subscript>14</Subscript> novel green nanophosphors

Novel green nanophosphors Ca₂Gd₂W₃O₁₄: Tb³⁺ were synthesized by solid state reaction method. From the X-ray diffraction profiles it is observed that Tb³⁺: Ca₂Gd₂W₃O₁₄ phosphors were crystallized in the form of tetragonal structure. The scanning electron microscopy (SEM) image shows that the particle size is at around 300 nm. In addition to these the prepared powder phosphors were also examined by the energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and mechanoluminescence (ML) spectra. Emission spectra of Tb³⁺: Ca₂Gd₂W₃O₁₄ nanophosphors have shown bright green emission at 545 nm (⁵D₄ → ⁷F₅) with an excitation wavelength λ_exci = 374 nm (⁷F₆ → ⁵G₆). ML spectra shows the radiation effect on the Ca₂Gd₂W₃O₁₄: Tb³⁺ nanophosphors and from that it was observed that these phosphors are very less sensitive for lower exposure.     

Effects of gate sidewall recess on Al<Subscript>0.2</Subscript>Ga<Subscript>0.8</Subscript>As/ In<Subscript>0.15</Subscript>Ga<Subscript>0.85</Subscript>As PHEMTs by citric-based selective etchant

In this report, an effective and simple method of selective gate sidewall recess is proposed to expose the low barrier channel at mesa sidewalls during device isolation for Al_0.2Ga_0.8As/ In_0.15Ga_0.85As PHEMTs (pseudomorphic high electron mobility transistors) by using a newly developed citric-acid-based etchant with high selectivity (> 250) for GaAs/Al_0.2Ga_0.8As or In_0.15Ga_0.85As/Al_0.2G_0.8 As interfaces. After sidewall recess, a revealed cavity will exist between the In_0.15Ga_0.85As layers and gate metals. Devices with 1 × 100μm² exhibit a very low gate leakage current of 2.4μA/mm even at V_GD = −10 V and high gate breakdown voltage over 25 V. As compared to that of no sidewall recess, nearly two orders of reduction in magnitude of gate leakage current and 100% improvement in gate breakdown voltage can be achieved.     

Effects of Nd-substitution on microstructures and dielectric characteristics of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics

Ca_1−3x/2Nd _x Cu₃Ti₄O₁₂ (x = 0, 0.1, 0.2) ceramics were prepared by a solid state reaction process, and single-phased structures were obtained for all the compositions. The dielectric characteristics of pure and Nd-substituted CaCu₃Ti₄O₁₂ ceramics were investigated together with the microstructures. The mixed-valent structures of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ in the present ceramics were confirmed by X-ray photoelectron analysis. The dielectric relaxation in the low temperature range was examined in detail and the variation of dielectric constant and dielectric loss was attributed to the modification mixed-valent structures.     

Bridgman growth and defects of Nd<Superscript>3+</Superscript> : Sr<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> laser crystals

Nd³⁺ : Sr₃Ga₂Ge₄O₁₄ crystals have been grown by the modified Bridgman method. The growth defects, such as striations, scattering particles and dislocations were investigated. Some featherlike striations were observed in as-grown crystals. EPMA analysis suggested that these inclusions were caused by the segregation of Nd₂O₃ from the melt. Chemical etching results showed that the dislocation density was in the range of 10³ ∼ 10⁵/cm².     

Synthesis,photoluminescence and mechanoluminescence properties of Eu<Superscript>3+</Superscript> ions activated Ca<Subscript>2</Subscript>Gd<Subscript>2</Subscript>W<Subscript>3</Subscript>O<Subscript>14</Subscript> phosphors

A new series of Eu³⁺ ions-activated calcium gadolinium tungstate [Ca₂Gd₂W₃O₁₄] phosphors were synthesized by conventional solid-state reaction method. The X-ray diffraction patterns of the powder samples indicate that the Eu³⁺: Ca₂Gd₂W₃O₁₄ phosphors are of tetragonal structure. The prepared phosphors were well characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), and mechanoluminescence (ML) spectra. PL spectra of Eu³⁺: Ca₂Gd₂W₃O₁₄ powder phosphors have shown strong red emission at 615 nm (⁵D₀ → ⁷F₂) with an excitation wavelength λ _exci = 392 nm (⁷F₀ → ⁵L₆). The energy transfer from tungstate groups to europium ions has also reported. Mechanoluminescence studies of Eu³⁺: Ca₂Gd₂W₃O₁₄ phosphors have also been explained systematically.     

Structural,optical, and opto-dielectric properties of W-doped Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films

A layer-by-layer deposition technique of Ga₂O₃ and WO₃ by vacuum evaporation method on glass and silicon substrates and subsequent annealing in oxygen atmosphere to form W-doped Ga₂O₃ (or Ga₂O₃:W) films was attempted here. The W doping level was measured by the energy dispersive X-ray fluorescence radiographic analysis. The crystalline structure of Ga₂O₃:W films was determined by the X-ray diffraction method. Experimental data indicate that W⁶⁺ ions doped in host Ga₂O₃ forming solid solutions (SS), in which the molar ratio (r) of W to Ga is 9.6, 13.4, 18.2, 22.7 and 30.4%. All the prepared SS have the known β-Ga₂O₃ crystalline structure. This doping controls the optical and electrical properties of the host Ga₂O₃. The optical properties of the prepared Ga₂O₃:W films were studied by UV–VIS–NIR absorption spectroscopy method from which the bandgap was determined. In general, it was found that the prepared Ga₂O₃:W films are wide-bandgap semiconductors with bandgap 4.69–4.47 eV and have dielectric properties. The optical sensitivity of the capacitance, dissipation factor and ac-conductance of the Ga₂O₃:W films grown on Si was studied as a function of W-doping level. It was observed that the prepared Ga₂O₃:W film of r = 22.7% has the highest photosensitivity amongst the other samples.     

Optimization of the Carbosilicothermic Synthesis of the Ti<Subscript>4</Subscript>SiC<Subscript>3</Subscript> MAX Phase

We have studied the formation of the Ti4SiC3 MAX phase during the vacuum carbosilicothermic reduction of TiO₂ with a combined reducing agent consisting of SiC and elemental Si and analyzed the effects of the synthesis temperature, heat treatment time, and percentage of elemental silicon in the starting mixture on the Ti₄SiC₃ yield. Optimal Ti₄SiC₃ synthesis conditions are as follows: temperature from 1550 to 1650°C, isothermal holding time of 360 min, and the starting-mixture composition TiO₂ + 1.2SiC + 0.6Si. The Ti₄SiC₃ yield then reaches 92 wt %.     

Influence of isovalent and heterovalent substitution for Bi<Superscript>3+</Superscript> and Fe<Superscript>3+</Superscript> on the properties of Bi<Subscript>2</Subscript>Fe<Subscript>4</Subscript>O<Subscript>9</Subscript>-based solid solutions

Bi_2–хLa_хFe₄O₉ and Bi₂Fe_4–2xTi_xCo_xO₉ ferrites have been prepared by solid-state reactions at a temperature of 1073 K. X-ray diffraction data indicate that, in the Bi_2–хLa_хFe₄O₉ system, the limiting degree of La³⁺ substitution for Bi³⁺ ions in Bi₂Fe₄O₉ does not exceed 0.05 and that the limiting degree of substitution in the Bi₂Fe_4–2xTi_xCo_xO₉ system lies in the range 0.05 < x < 0.1. The specific magnetization and specific magnetic susceptibility of the samples have been measured at temperatures from 5 to 300 K in a magnetic field of 0.86 T. The field dependences of magnetization obtained for the Bi_2–хLa_хFe₄O₉ and Bi₂Fe_4–2xTi_xCo_xO₉ ferrites at temperatures of 300 and 5 K demonstrate that partial isovalent substitution of La³⁺ for Bi³⁺ ions in Bi₂Fe₄O₉ and heterovalent substitution of Ti⁴⁺ and Co²⁺ ions for two Fe³⁺ ions leads to partial breakdown of the antiferromagnetic state and nucleation of a ferromagnetic state.     

Photoluminescence of Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>:Sm<Superscript>2+</Superscript> crystals

The photoluminescence spectra of Ga₂S₃:Sm²⁺ crystals have been measured in a wide temperature range (77–450 K). The results have been used to identify the mechanisms of the luminescence and energy transfer from the host to the rare-earth ion.     

Effect of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> concentration in Bi-containing high-temperature solutions on the luminescence of epitaxial Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> films

Single-crystal gadolinium gallium garnet films have been grown by liquid-phase epitaxy on (111) Gd₃Ga₅O₁₂ substrates from supercooled Bi₂O₃-B₂O₃ fluxed melts at different Gd₂O₃ concentrations. The luminescence spectra of the films have been measured at 10 and 300 K under unmonochromatized synchrotron X-ray excitation and selective UV synchrotron excitation. The Bi³⁺ luminescence is discussed.     

Ca<Subscript>3</Subscript>WO<Subscript>6</Subscript>: a novel microwave dielectric ceramic with complex perovskite structure

Present work introduces a novel Ca₃WO₆ microwave dielectric ceramic with a complex perovskite structure. The Ca₃WO₆ ceramic was prepared by solid state reaction method and can be well densified at above 1,260 °C for 2 h in air. All the XRD patterns can be fully indexed as a single-phase monoclinic structure (space group P2₁/n). The sharp Raman vibration mode at 810 cm⁻¹ suggests the long range order in the Ca₃WO₆ structure. The best microwave dielectric properties can be obtained in ceramic sample sintered at 1,275 °C for 2 h with a permittivity ~15.3, a Qf value ~29,200 GHz and a TCF value about −30 ppm/°C. Applying the oxide additivity rule, the calculated permittivity agrees well with the measured value. This kind of ceramic might have some potential value for microwave application for its good microwave dielectric behavior. The (Ca_1/2W_1/2) complex cations holding the site of Ti⁴⁺ in perovskite structure would introduce many new systems in complex perovskite compounds in the future.     

Electrical properties of perovskite-like compounds in the Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-TiO<Subscript>2</Subscript> system

The electrical properties of layered perovskite-like compounds with the general formula Bi _{m + 1}Fe _{m − 3}Ti₃O_{3m + 3} have been studied in relation to their physicochemical properties and structure.     

Giant dielectric and electrical properties of sodium yttrium copper titanate: Na<Subscript>1/2</Subscript>Y<Subscript>1/2</Subscript>Cu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

The electrical properties and dielectric response in Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic prepared by conventional solid-state reaction method and sintered at 1,090 °C for 5 h were investigated as functions of frequency and temperature. Main phase of Na_1/2Y_1/2Cu₃Ti₄O₁₂ with CaCu₃Ti₄O₁₂-like crystallographic structure and CuO secondary phase were observed in the X-ray diffraction pattern. Abnormal grain growth was observed just as observed in CaCu₃Ti₄O₁₂ ceramics. The Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic exhibits a high ε′ of ~2.04 × 10⁴ at 20 °C and 1 kHz and low tan δ (with the minimum 0.080 at 5 kHz). Impedance spectroscopy analysis reveals that Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic is electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries. Giant ε′ response in Na_1/2Y_1/2Cu₃Ti₄O₁₂ ceramic is therefore attributed to an internal barrier layer capacitor effect.     

In<Subscript>2</Subscript>O<Subscript>3</Subscript>-decorated ordered mesoporous NiO for enhanced NO<Subscript>2</Subscript> sensing at room temperature

In this work, ordered mesoporous structures of In₂O₃-decorated NiO were prepared by a two-step process, comprising of the synthesis of ordered mesoporous NiO followed by injection of In³⁺ into their pores. The pore size distribution of the as prepared samples was between 4.1 and 21.1 nm. Furthermore, their sensing performances toward NO₂ were tested systematically. The results showed the highest response about 3 towards 15 ppm NO₂ sensing at room temperature for 5.0 at.% In₂O₃-decorated NiO compared to other decorated and pure samples. Moreover, the sensor displayed excellent selectivity towards NO₂ in the presence of other interfering gases, such as carbon monoxide, ammonia, ethanol, methanol, formaldehyde, toluene, acetone. The exceptional NO₂ sensing performance of the In₂O₃-decorated mesoporous NiO may be attributed to their high specific surface area and the formation of p–n junction with modified carrier concentration caused by In³⁺ doping. This method can act as an effective strategy for enhancement of gas-sensing properties of pure metal oxides.