基于BCD工艺的模拟多路复用器设计

基于BCD工艺设计了一款模拟多路复用器。电路支持单电源或双电源供电(单电源2.5~5.5V,双电源±2.5 V),内含32个CMOS开关,通过5~32译码器实现32选1功能。采用SMIC0.18μm BCD工艺流片,电路经测试验证,关键参数导通电阻和传输延迟达到设计要求。     

4-GHz Integrated-Circuit Mixer

We have calculated the conversion loss for microwave diode mixers taking into account the effects of series resistance and barrier capacitance in the diode and the internal resistance of the local oscillator. The relations between the conversion loss and the parameters, which are important for the design of the diode mixer, are clarified. A 4-GHz integrated-circuit low-noise mixer is developed. The minimum overall noise figure obtained is 4.1 dB with a short-circuited image-frequency termination.     

The Light-Emitting-Switch Integrated-Circuit Display

A semiconductor display device utilizing arrays of light-emitting devices with inherent memory has been developed. The central element is a p-i-n device that exhibits current-controlled negative resistance and emits light in the high-conductance state. This light-emitting and switching device has been employed in a monolithic integrated circuit that permits the logic function in addition to the opticaf output function to be perfomed on the display surface. The circuit has been developed in a configuration that permits matrix address. This paper discusses the basic light-emitting switch and its utilization as a matrix display device and describes the development of an integrated structure employing the light-emitting switch and its incorporation into a complete display system. Modifications and improvements of the matrix display system based on this concept are also discussed.     

Integrated-Circuit Structures on Anisotropic Substrates

This paper addresses the problem of anisotropy in substrate materials for microwave integrated-circuit applications. It is shown that in modeling the circuit characteristics, a serious error is incurred which becomes larger with increasing frequency when the substrate anisotropy is neglected. Quasi-static, dynamic, and empirical methods employed to obtain the propagation characteristics of microstrip, coplanar waveguides, and slotlines on anisotropic substrates are presented. Numerical solutions such as the method of moments and the transmission-line matrix technique are outlined. The modified Wiener-Hopf, the Fourier series techniques, and the method of lines are also discussed. A critique of the aforementioned methods and suggestions for future research directions are presented. The paper includes new results as well as a review of established methods.     

An Alternative Integrated-Circuit Yield Model

This paper develops a model to predict the number of good integrated circuits (the yield) from a semiconductor wafer processing line. The model is different from other published models and predicts observed outcomes better. Many models tend to predict lower yields than those actually achieved because those models are inherently incapable of predicting the average number of good chips per wafer. The model developed in this paper is based on combinatorial analysis and considers the number of die sites on the wafer and the total number of yield detracting defects on the wafer. In contrast the other models referenced require at least two parameters as input data: the area of one die site or chip and the average defect density. A third parameter, the Cdf of the defect density is often implied by the selection of the model.     

An Integrated-Circuit Approach to Extracellular Microelectrodes

This paper describes a new multielectrode microprobe which utilizes integrated-circuit fabrication techniques to overcome many of the problems associated with conventional microelectrodes. The probe structure consists of an array of gold electrodes which are supported on a silicon carrier and which project beyond the carrier for a distance of about 50 ? to allow a close approach to active neurons. These electrodes are covered with a thin (0.4-?) layer of silicon dioxide which is selectively removed at the electrode tips using high-resolution photoengraving techniques to define the recording areas precisely. The processing sequence described permits any two-dimensional electrode array to be realized. Interelectrode spacings can be accurately controlled in the range from 10 to 20 ? or larger, and electrode-tip diameters can be as small as 2 ?.     

Corrosion Resistance of Several Integrated-Circuit Metallization Systems

Accelerated life data are presented on several integratedcircuit metallization systems including Al, Mo-Au, Ti-Pt-Au, and a new system Ti: W-Au where the RF sputtered Ti: W layer is a pseudo alloy of 10-20 percent Ti in W. Life tests include total water immersion, high-pressure steam and 85°C/85 percent RH/bias on bare and plastic-encapsulated devices. Heat-age and resistivity-ratio data are presented showing the metallurgical stability of the Ti: W-Au system. The corrosion resistance decreases as Ti-Pt-Au > Ti: W-Au >> Mo-Au ? Al.     

Analysis of Transmission Lines on Integrated-Circuit Chips

The availability of very fast semiconductor switching devices and the possibilities of large scale integration have increased the importance of the interconnection problem for the design of high-speed computers. The interconnection delay represents a fundamental boundary which limits the ultimate speed of logic circuits. The transmission-line behavior of interconnections on integrated-circuit chips, especially for subnanosecond applications, is the prime concern of this paper. A lumped circuit model is proposed and justified on physical and experimental grounds. It is shown that interconnections behave like RC transmission lines at low frequencies, with the effect of inductance showing up at midrange and high frequencies. Some simple formulas are included for design use.     

程控多路开关的研制

介绍了一种低热电势程控多路开关的工作原理和使用方法。该多路开关配以双地址只听ＩＥＥＥ－４８８接口，可用微机控制，也便于手动操作。本多路开关可为１６通道（每通道４个接点），也可为３２通道（每通道两个接点）。     

An Integrated-Circuit Balanced Mixer, Image and Sum Enhanced

GaAs Schotty-barrier diodes with a zero-bias cutoff frequency of 800 GHz have been used in an integrated-circuit balanced diode mixer operating with a signal frequency centered at 9.3 GHz and a local-oscillator (LO) frequency at 7.8 GHz. For an instantaneous bandwidth of 1.0 GHz, the conversion loss (including all circuits and connector losses) was under 3.15 dB. Over the center 0.5 GHz of the band, the conversion loss was less than or equal to 2.8 dB. The conversion loss at the image-band edges was greater than 25 dB; the loss at the center of the image band was greater than 35 dB.     

A Generalized Multiplexer Theory

A general direct analytical design process is presented for multiplexers having any number of channels with arbitrary channel complexity, bandwidths, and interchannel spacings. The theory assumes initially that independent doubly terminated designs are available for the individual filters, and formulas for modifications to parameters associated with the first two resonators are developed to match the multiplexer. These formulas are approximate, and the Iimitations of the theory are indicated with several computed examples. The theory is applied to the design of a five-channel interdigital multiplexer. A first-stage immittance compensation scheme is described which improves the design for limiting cases, but the theory of complete immittance compensation which handles even contiguous channel operation is reserved for a companion paper.     

基于制造成品率模型的集成电路早期可靠性估计

缺陷是影响集成电路成品率与可靠性的主要因素.本文在区分缺陷与故障两个概念的基础上,将缺陷区分为成品率缺陷(硬故障)、可靠性缺陷(软故障)和良性缺陷.利用关键区域的面积,给出了一个缺陷成为"硬故障"或"软故障"的概率,给出了精度较高的IC成品率预测模型.利用成品率缺陷与可靠性缺陷之间的关系,给出了工艺线生产的产品的失效率与该工艺线制造成品率之间的定量关系.在工艺线稳定的条件下,通过该工艺线的制造成品率可以利用该关系式可以有效的估计出产品的失效率,可以有效地缩短了新产品的研发周期.     

Benefits of Integrated-Circuit Burn-In to Obtain High Reliability Parts

The technique of integrated circuit (IC) burn-in is applied industry-wide with the assumption that burned-in ICs have a much lower failure rate during operating life than ICs which are not burned-in. Several years ago this approach was valid for all ICs, but today burn-in procedures for some ICs provide little, if any, benefit. However, some customers still request burned-in ICs, assuming that this will produce better reliability. This paper provides historical data for linear ICs and presents a procedure to help the user determine if burn-in is worthwhile. An example for linear ICs where minimum benefit produced from burn-in is provided. By repeating this exercise with any other parts, the user can decide whether burn-in will decrease the failure rate appreciably for his application. This article deals specifically with decreases in failure rates through burn-in. It is not within the scope of this paper to describe general factors that could decrease failure rates.     

一种同步分支复接器介绍

本文介绍GPT公司研制的、环路速度为155 Mbit/s的同步分支复接器ADMX。文中详细叙述了这种ADMX的总体结构,各单元盘功能,系统的应用方式及其设备管理操作系统。     

Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

The technological capabilities of the layer-by-layer electrochemical formation of vertical contact structures based on a copper–tin system for mounting silicon chips, including 3D technologies, have been considered. The possibility of fixing a chip–board clearance for the preventing a short circuit between the contact areas with the solder material has been shown.     

阵列波导光栅复用器的数学特性

叙述了基于阵列波导光栅复用器的结构与原理,在此基础上分析了其输入与输出信号的傅里叶变换、信号传输、信号循环移位,复用、解复用和波长路由的信号矩阵变换等光信号时空变换和光信号处理的数学特性,拓宽了阵列波导光栅波分复用器的应用领域。     

A Low-Loss Diffraction Grating Frequency Multiplexer

A quasi-optical frequency multiplexer based on a blazed diffraction grating is studied. Experimental data, supported by semi-quantitative theoretical considerations, show that the multiplexer is an efficient channel-dropping filter well suited to use in the millimeter wave region. A feature of the grating multiplexer which sets it apart from conventional designs is its ability to drop several channels using a single frequency-selective element, namely, a diffraction grating. This economy of hardware results in a simple, compact structure. The channels of the experimental multiplexer have typical bandwidths of ~540 MHz with loss of ~1 dB. The width of the impulse response at half amplitude is ~1.5 ns. Return loss within a channel is typically 15-20 dB. Comparisons with other millimeter wave multiplexer designs are discussed.     

集成化光上下路复用器的研究进展

密集波分复用(DWDM)已经成为光纤通信的主要发展方向,光上下路分插复用器(OADM)作为WDM网络中的关键技术,它的优劣将直接影响通信网络的性能.侧重于从器件的角度对OADM的功能和发展现状进行介绍,并对其构成的关键器件的发展进行了概述.     

全光通信中的光分插复用器

文中对全光通信中的关键设备之一——光分插复用器 ( OADM,Optical Add/ DropMultiplexer)进行了综述。主要介绍了 OADM的原理、结构和功能 ,对 OADM在全光通信网中的应用及相应的关键技术进行了评述 ,探讨了 OADM技术和产品的现状及发展趋势 ,为我国发展相应的技术和产品提供有益的参考。     

赝态结构多模干涉波分复用器的研究

为了减小波分复用器的器件长度,在聚酰亚胺材料的基础上,设计了一种赝态结构的2×2多模干涉波分复用器,并用精确导模分析法对其进行模拟分析和优化设计.结果表明,赝态结构波分复用器可以有效地对980 nm和1 550 nm光进行解复用,而器件尺寸只有传统设计的1/5;且器件在器件长度和波长变动中显示出良好的容差性,能够与掺铒放大器和激光器实现集成.其中,赝态结构多模干涉聚酰亚胺波分复用器的干涉区宽度和长度以及输入口宽度和距离对其性能均有影响.