低压CVD氮化硅薄膜的沉积速率和表面形貌

以三氯硅烷(TCS)和氨气分别作为低压化学气相沉积(LPCVD)氮化硅薄膜(SiN_x)的硅源和氮源,以高纯氮气为载气,在热壁型管式反应炉中,借助椭圆偏振仪和原子力显微镜,系统考察了工作总压力、反应温度、气体原料组成等工艺因素对SiN_x薄膜沉积速率和表面形貌的影响.结果表明:随着工作压力的增大,SiN_x薄膜的沉积速率逐渐增加,并产生一个峰值.随着原料气中NH³/TCS流量比值的增大,SiN_x薄膜的沉积速率逐渐增加,随后逐步稳定.随着反应温度的升高,沉积速率逐渐增加,在830℃附近达到最大,随着反应温度的进一步升高,由于反应物的热分解反应迅速加剧,使得SiN_x薄膜的沉积速率急剧降低.在730-830℃的温度范围内,沉积SiN_x薄膜的反应表观活化能约为171kJ/mol.在适当的工艺条件下,制备的SiNx薄膜均匀、平整.较低的薄膜沉积速率有助于提高薄膜的均匀性,降低薄膜的表面粗糙度.     

Parylene F薄膜介电材料的制备与研穷

通过真空化学气相沉积方法制备了Parylene F薄膜,采用扫描电镜(SEM)和原子力显微镜(AFM)观察了表面形貌,并用红外光谱(IR)、X射线光电子能谱(XPS)及热重分析仪(TGA)等分析手段对薄膜组成与性能进行了表征,阻抗分析仪测试了薄膜的介电参数.研究结果表明化学气相沉积方法制备的Parylene F薄膜是一...     

Parylene F薄膜介电材料的制备与研究

通过真空化学气相沉积方法制备了Parylene F薄膜,采用扫描电镜(SEM)和原子力显微镜(AFM)观察了表面形貌,并用红外光谱(IR)、X射线光电子能谱(XPS)及热重分析仪(TGA)等分析手段对薄膜组成与性能进行了表征,阻抗分析仪测试了薄膜的介电参数。研究结果表明化学气相沉积方法制备的Parylene F薄膜是一种致密光滑、性能较优、易于成型且具有较大潜在应用前景的介电材料。     

BiFeO_3薄膜的液相自组装制备与表征

利用自组装单层膜技术,以三氯十八烷基硅烷(OTS)为模板,以硝酸铋和硝酸铁为原料,柠檬酸为络合剂,在玻璃基片上制备了铁酸铋晶态薄膜.探讨了薄膜的煅烧温度和沉积温度对BiFeO3薄膜的影响.通过X射线衍射(XRD)、扫描电镜(SEM)及原子力显微镜(AFM)测试手段对BiFeO3薄膜的物相组成、显微结构和表面形貌进行了表征,EDS能谱测试为铁酸铋薄膜的化学组成提供了有力的证据.结果表明:利用自组装技术在600℃热处理后成功制备出了纯净的BiFeO3晶态薄膜,当沉积温度为70～80℃时铁酸铋薄膜结晶良好,样品表面均匀、致密.     

RF-PECVD法在钢衬底上沉积氮化硅薄膜的研究

采用射频等离子体增强化学气相沉积法(RF-PECVD)在钢衬底上沉积氮化硅薄膜.用台阶仪、X射线光电子能谱(XPS)、透射电镜(TEM)和扫描电镜(SEM)等手段对薄膜的厚度、成分、结构及形貌进行表征,并探讨了各工艺参数对薄膜沉积速率的影响.     

氟化非晶碳膜的微结构分析

利用等离子体增强化学气相沉积(PECVD)法,在不同的温度下制备了氟化非晶碳膜.采用原子力显微镜(AFM)、X 射线光电子能谱(XPS)和傅里叶红外吸收光谱(FTIR)等仪器对薄膜微结构进行了表征.研究发现,氟化非晶碳膜微观结构与薄膜生长过程温度控制密切相关,温度升高,膜内键合结构变化,sp2相对含量增加.     

大气压等离子体制备类二氧化硅薄膜的实验研究

本文利用六甲基二硅氧烷(HMDSO)作为硅的先驱粒子,氮或氩气为稀释气体,进行了大气压等离子体化学气相沉积类二氧化硅薄膜的实验研究.运用红外光谱(FTIR)、光电子能谱(XPS)和扫描电镜(SEM)对沉积的薄膜进行结构和表面分析.实验表明,当功率一定时,在低的HMDSO含量下,硅衬底上得到了一层平整、致密、连续的薄膜沉积.红外吸收谱分析呈现出明显的Si-O-Si吸收峰,表明了类二氧化硅结构,其中的[Si]/[O]含量比达到1∶1.56.当HMDSO含量增加时,薄膜中含碳键成分增加,薄膜表面的大颗粒增多.相对地氮气而言,氩气在大气压下更容易获得稳定均匀的等离子体和更大的生长速率/功率比.     

SiNx薄膜的性质及其在开管扩Zn中的应用

采用PECVD方法制备了SiNx薄膜,用椭偏测厚仪、红外光谱仪和俄歇能谱仪研究了SiNx薄膜的性质.测试结果表明,SiNx薄膜的折射率随SiH4流量增加不断增大,当SiH4/NH3为38/8时,沉积SiNx薄膜的折射率为1.93,对应的Si/N比约为0.75.FTIR测试结果表明,随着SiH4/NH3流量的增加,N-H含量降低,Si-H含量升高,当SiH4/NH3为38/8时,SiNx薄膜的H含量最少.通过优化沉积条件和层厚度,将SiNx薄膜应用于InP材料的开管扩Zn中,并成功制备了平面结构的InP/InGaAs PIN探测器.     

a-C:F薄膜结构与电学性能研究

采用电子回旋共振等离子体化学气相沉积（ECR-CVD）方法,以C4F8和CH4为源气体,在不同气体流量比R（R=[CH4]/（[CH4]＋[C4F8]））条件下沉积氟化非晶碳（a-C：F）薄膜.用原子力显微镜（AFM）分析了薄膜的表面形貌.用柯西（Cauchy）模型和Levenberg-Marquardt非线性迭代算法分析了薄膜的椭圆光谱.用X光电子能谱（XPS）和傅里叶变换红外光谱（FTIR）技术分析了薄膜的化学成分.随着气体流量比R的增大a-C：F薄膜C-C键结构增多,薄膜C/F比增大.a-C：F薄膜的介电常数取决于电子极化并随R的增大而上升.a-C：F薄膜导电行为在低场强区域呈现欧姆特性,在高场强区域符合Poole-Frankel机制.随着C-C含量的增大,π价带态和π＊导带态之间的带隙减小,电荷陷阱深度减小,陷阱中的电子在场增强热激发作用下更容易进入导带,导致薄膜漏电流增加.     

SiO2层上沉积的纳米多晶硅薄膜及其特性

采用低压化学气相沉积(LPCVD)系统以高纯SiH4为气源,在p型10.16 cm<100>晶向单晶硅衬底SiO2层上制备纳米多晶硅薄膜,薄膜沉积温度为620℃,沉积薄膜厚度分别为30 nm、63 nm和98 nm.对不同薄膜厚度的纳米多晶硅薄膜分别在700℃、800℃和900℃下进行高温真空退火.通过X射线衍射(XRD)、Raman光谱、扫描电子显微镜(SEM)和原子力显微镜(AFM)对SiO2层上沉积的纳米多晶硅薄膜进行特性测试和表征,随着薄膜厚度的增加,沉积态薄膜结晶显著增强,择优取向为<111>晶向.通过HP4145B型半导体参数分析仪对沉积态掺硼纳米多晶硅薄膜电阻I-V特性测试发现,随着薄膜厚度的增加,薄膜电阻率减小,载流子迁移率增大.     

TiB2超硬薄膜的合成及性能

采用离子束溅射方法制备了ＴｉＢ２硬质薄膜，ＡＦＭ观察表明薄膜表面非常光谱，ＡＥＳ、ＸＲＤ和ＸＰＳ分析证明薄膜中主要是Ｂ、Ｔｉ比为１．８，六方结构的ＴｉＢ２多晶体、且呈现强烈的（１０１）择优取向，由超显微压痕测量系统测得的加载、卸载曲线计算得到的薄膜的显微硬度比高达４８ＧＰａ     

Author index

Glow discharge films with various ratios of carbon to tin were deposited on various metals and on glass. The ratio of carbon to tin was determined quantitatively by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The AES data correlated well with the XPS data. The X-ray beam and electron impact effects on organo-tin films influence the composition and are discussed in detail. The ratio of carbon to tin was not constant throughout the glow discharge reactor and this inhomogeneity is accounted for by the prevalence of “atomic” polymerization rather than “molecular” polymerization. We demonstrated that the substrate material had a definite influence on the composition of the films.     

电化学沉积DLC膜及其表征

采用电化学沉积方法，甲醇有机溶剂作碳源，在直流电源作用下在单晶硅表面沉积得到碳薄膜。薄膜不溶于苯、丙酮等有机溶剂，具有较高的硬度(16GPa左右)，用AFM、Raman和FTIR分析手段对该薄膜表面形貌和结构进行表征，Raman和FTIR结果表明电化学沉积得到的是含氢的类金刚石碳薄膜。通过研究样品薄膜的XPS和XAES谱图特征，进一步证实薄膜是DLC薄膜，并用线性插入法估算出样品薄膜中SP^3的相对含量为60％，同时推测了电化学沉积DLC薄膜的生长机理。     

CVD of hard DLC films in a radio frequency inductively coupled plasma source

Chemical vapor deposition (CVD) of hard diamond-like carbon (DLC) films on silicon (100) substrates from methane was successfully carried out using a radio frequency (r.f.) inductively coupled plasma source (ICPS). Different deposition parameters such as bias voltage, r.f. power, gas flow and pressure were involved. The structures of the films were characterized by Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy. The hardness of the DLC films was measured by a Knoop microhardness tester. The surface morphology of the films was characterized by atomic force microscope (AFM) and the surface roughness (R_a) was derived from the AFM data. The films are smooth with roughness less than 1.007 nm. Raman spectra shows that the films have typical diamond-like characteristics with a D line peak at 1331 cm⁻¹ and a G line peak at 1544 cm⁻¹, and the low intensity ratio of I_D/I_G indicate that the DLC films have a high ratio of sp³ to sp² bonding, which is also in accordance with the results of FTIR spectra. The films hardness can reach approximately 42 GPa at a comparatively low substrate bias voltage, which is much greater than that of DLC films deposited in a conventional r.f. capacitively coupled parallel-plate system. It is suggested that the high plasma density and the suitable deposition environment (such as the amount and ratio of hydrocarbon radicals to atomic or ionic hydrogen) obtained in the ICPS are important for depositing hard and high quality DLC films.     

硅碳比对Si(111)表面SSMBE异质外延SiC薄膜的影响

利用固源分子束外延(SSMBE)生长技术, 在不同的硅碳蒸发速率比(Si/C)条件下, 在Si(111)衬底上生长SiC单晶薄膜. 利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品形貌和结构进行了研究. 结果表明, 在Si/C比(1.1:1.0)下生长的薄膜样品, XRDω扫描得到半高宽为2.1°; RHEED结果表明薄膜具有微弱的衍射环, 有孪晶斑点. 在Si/C比(2.3:1.0)下生长的薄膜, XRDω扫描得到的半高宽为1.5°, RHEED显示具有Si的斑点和SiC的孪晶斑点. AFM显示在这两个Si/C比下生长的样品表面都有孔洞或者凹坑, 表面比较粗糙. 从红外光谱得出 薄膜存在着比较大的应力. 但在Si/C比(1.5:1.0)下生长的薄膜样品, XRDω 扫描得到的半高宽仅为1.1°; RHEED显示出清晰的SiC的衍射条纹, 并可看到SiC的3×3表面重构, 无孪晶斑点; AFM图像表明, 没有明显的空洞, 表面比较平整. FTIR谱的位置显示, 在此Si/C比下生长的薄膜内应力比较小. 因此可以认为, 存在着一个优化的Si/C比(1.5:1.0), 在这个Si/C比下, 生长的薄膜质量较好.     

Sol–gel derived ZnO/PVP nanocomposite thin film for superoxide radical sensor

Pure ZnO films and ZnO nanoparticle-dispersed polyvinylpyrrolidone (PVP) composite films are prepared on Pyrex glass substrates by the sol–gel dip-coating technique utilizing zinc acetate precursor. The thin films are extensively characterized for surface morphology, chemistry, and nanocrystallite size using various advanced analytical techniques including Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For the processing conditions considered, ZnO semiconductor thin films with nanocrystallite size 20–30 nm are obtained. The ZnO nanoparticle size in the PVP composite film increases with increase in ZnO content. The resistance of both the synthesized ZnO and ZnO/PVP thin films decrease significantly after exposure to solution containing superoxide anion radicals (SOR). The results thus indicate that ZnO and ZnO/PVP composite thin films can be used as biosensors for SOR and potentially for characterizing the antioxidant properties of fluids.     

Effect of annealing temperature on growth of Ce-ZnO nanocomposite thin films: X-ray photoelectron spectroscopy study

Ce-doped ZnO nanocomposite thin films with Ce/Zn ratio fixed at optimum value (10 at.%) have been prepared via sol-gel method at different annealing temperatures varied from 180 to 500 °C. The synthesized samples were characterized employing atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) techniques. According to AFM analysis, the average grain size increased from about 70 nm to 150 nm by increasing the annealing temperature from 300 to 500 °C. Moreover, based on the XPS data analysis, it was found that three major metal ions namely Ce³⁺, Ce⁴⁺, and Zn²⁺ coexist on the surface of the nanocomposite films. XPS data analysis also revealed that Ce³⁺ ion is oxidized to Ce⁴⁺ ion with increasing annealing temperature. Due to oxidation, the ratio of [Ce^3±]/[Ce total] changed from 68.8 to 38.1% by increasing the annealing temperature from 180 to 500 °C. In addition, the Ce/Zn ratio increased from 0.21 to 0.42 when increasing the annealing temperature from 180 to 500 °C indicating migration of Ce ions toward the surface at higher temperatures. Finally, the XRD measurements determined that the ZnO thin films have a hexagonal wurtzite structure and CeO₂ crystallites are formed at 500 °C in the Ce-doped ZnO nanocomposite thin films.     

Gd@C_(82) Langmuir-Blodgett纳米薄膜的表面微观结构

采用Langmuir-Blodgett(LB)技术在新解理的云母和氧化铟锡(ITO)基片上成功地制备出富勒烯金属包合物Gd@C82/SA的单层及多层Langmuir-Blodgett分子薄膜,采用原子力显微镜(AFM)和X射线光电子能谱(XPS)对所制备纳米超分子薄膜的表面形貌和表面元素组成进行了系统研究,结果表明,与纯的Gd@C82 Langmuir薄膜相比,以硬脂酸(SA)为辅助成膜材料所得到的Gd@C82/SA复合Langmuir薄膜能更好地转移到云母和ITO基片表面,其镀膜转移比接近1,当硬脂酸(SA)与Gd@C82的摩尔比达到4:1时,所对应的Gd@C82/SA LB薄膜表现出良好的均一性和理想的层状结构。     

氨化Si基Ga2O3/In制备GaN薄膜

研究了Ga2O3/In 膜反应自组装制备GaN薄膜,再将Ga2O3/In膜在高纯氨气气氛中氨化反应得到GaN薄膜,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电镜(SEM),原子力显微镜(AFM),透射电镜(TEM)对样品进行结构,形貌的分析.测试结果表明:用此方法得到了六方纤锌矿结构的GaN多晶膜,且900℃时成膜的质量最好.     

不同氧氩比例对氧化硅(SiO2)薄膜的结构及性能的影响

在不同氧氩比例气氛下,采用反应直流磁控溅射方法制备了SiO2薄膜.利用X射线衍射（XRD）、X射线光电子能谱（XPS）、原子力显微镜（AFM）和紫外可见光谱（UV-Visible spectrum）等研究了氧氩比例的不同对SiO2薄膜的晶体结构、化学配比、表面形貌和光学性能的影响.结果显示：室温下,不同氧氩比例的SiO2薄膜都为非晶结构;随着氧分量的增加,Si2p与O1s向高结合能方向移动;在氧分量较大的气氛下,SiO2薄膜的化学失配度较小,薄膜均匀,致密,在400-1100nm有良好的光透过性.