Roles of Ba/Ti Ratios in the Dielectric Properties of BaTiO3 Ceramics

The effect of the Ba/Ti ratio on microstructure, dielectric/ferroelectric properties, and domain width was studied using optical microscopy, ɛ( T ) curves, D – E hysteresis, and transmission electron microscopy. Although Ti-excess samples showed abnormal grain growth and a decrease of room-temperature permittivity due to a liquid phase at grain boundaries, its ferroelectric properties were similar to those of stoichiometric BaTiO₃ ceramics. However, in Ba-excess samples, an increase of permittivity and ferroelectric properties different from those of stoichiometry were found. Changes in domain width and ferroelectric transition behavior indicated that the variation of dielectric properties was related to the internal stress. It is proposed that this internal stress originated from differences in the thermal expansion coefficient between the matrix and the second phase.     

Dielectric Properties of Ba(Zr,Ti)O3-Based Ferroelectrics for Capacitor Applications

The purpose of the present investigation is to describe the influence of the processing parameters on the dielectric behavior of manganese-doped Ba(Ti_{1− x} Zr _x )O₃ceramics, particularly variations in the small-signal aging rate, temperature characteristic, and hysteresis. In this paper, the aging behavior of base-metal electrode materials above the temperature of the permittivity maximum ( T _M), including the influence of the zirconium content and annealing conditions, is described for the first time. The aging rate at temperatures greater than T _M decreases as the oxygen partial pressure increases during annealing and the zirconium content increases, whereas the aging rate exhibits a maximum at temperatures much less than T _M. The behavior is explained in terms of a diffuse phase transition. Hysteresis-loop deformation is observed during aging.     

Electrical Properties of Cerium-Doped BaTiO3

The high-temperature equilibrium electrical conductivity of Ce-doped BaTiO₃ was studied in terms of oxygen partial pressure, P (O₂), and composition. In (Ba_1−xCe _x )TiO₃, the conductivity follows the −1/4 power dependence of P (O₂) at high oxygen activities, which supports the view that metal vacancies are created for the compensation of Ce donors, and is nearly independent of P (O₂) where electron compensation prevails at low P (O₂). When Ce is substituted for the normal Ti sites, there is no significant change in conductivity behavior compared with undoped BaTiO₃, indicating the substitution of Ce as Ce⁴⁺ for Ti⁴⁺ in Ba(Ti_1−yCe _y )O₃. The Curie temperature ( T _c) was systematically lowered when Ce³⁺ was incorporated into Ba²⁺ sites, whereas the substitution of Ce⁴⁺ for Ti⁴⁺ sites resulted in no change in this parameter.     

Weak-Beam Dark-Field Microscopy of Complex Stress States in X7R-Type BaTiO3 Dielectric Core–Shell Structures

X7R-type BaTiO₃ materials were analyzed using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Powder XRD indicated that the materials had pseudocubic lattices, but core–shell grain structures predominated in bright-field (BF) TEM images. Electron diffraction patterns across the core–shell boundaries and convergent beam electron diffraction patterns of cores and shells indicated that coherent grain boundaries existed between cores and shells. The flat dielectric constant–temperature curves obtained from these materials can be interpreted in terms of the internal stress states in individual grains. The stress states were observed using weak-beam dark-field (WBDF) microscopy, and strain contours formed by distorted crystal planes were visible in the WBDF images. The contours observed were dependent on the stress state of the crystal instead of crystal symmetry and the stress distribution in individual grains was determined by both the thickness ratio of shell and core, and the geometrical relationship of the core and the shell. Twins observed in this material were determined to be growth rather than mechanical twins, through observation of the strain contour distribution.     

Influence of Stress and Chemical Homogeneity on Dielectric Properties of BaTi0.9Zr0.1O3

The influence of mechanical stress and chemical homogeneity on the permittivity of BaTi_0.9Zr_0.1O₃ ceramics prepared from mixed-oxide and hydrothermal powders was studied. To reduce stress, liquid-phase sintering was applied in conjunction with a low heating rate to stimulate the formation of large grains. The influence of chemical homogeneity was studied by variations in sintering temperatures and times. For both types of ceramics, the dielectric constant at the Curie temperature was influenced by both factors, but to a different extent. In the mixed oxide ceramic, chemical homogeneity played a more prominent role, while internal stress appeared to exert a larger influence in the hydrothermal ceramics. The dielectric constant at the Curie temperature could be increased by 5%–10% by an annealing treatment at 200°C, followed by slow cooling.     

Incorporation of Er3+ into BaTiO3

The incorporation of Er³⁺ into BaTiO₃ ceramics was investigated on samples containing 0.25, 0.5, 1, 2, 8, and 10 at.% of dopant, after sintering at 1350–1550°C in air. For Er³⁺ concentrations ≤1 at.%, dense and large-grained ceramics with low room-temperature resistivity (10²–10³Ω·cm) were obtained. The observed properties are largely independent of stoichiometry. Simultaneous substitution of Er³⁺ at both cation sites, with higher preference for the Ba site, is proposed. The behavior of heavily doped ceramics depends on stoichiometry. When Ba/Ti < 1, the electrical properties change from slightly semiconducting to insulating as Er concentration increases from 2 to 8 at.%. The ceramics have tetragonal perovskite structure and contain a large amount of Er₂Ti₂O₇ pyrochlore phase. On the other hand, when Ba/Ti > 1, the ceramics are insulating, fine-grained, and single phase. In this case, incorporation of Er³⁺ predominantly occurs at the Ti site, with oxygen vacancy compensation. Incorporation is accompanied by a significant reduction of tetragonality and by expansion of the unit cell. The different results indicate that Er³⁺ solubility at the Ba site does not exceed 1 at.%, whereas solubility at the Ti site is at least 10 at.%. However, the incorporation of Er³⁺ and the resulting properties are also strongly affected by sintering conditions.     

Alkoxide-Hydroxide Route to Syntheltize BaTiO3-Based Powders

When preparing homogeneous, fine barium titanate powders, the major difficulty is to avoid the spontaneous self-condensation between the Ti-OH groups. In the usual way of preparing fine barium titanate powders, chelating agents (citrate, oxalate) or simply unidentate ligands (alkoxy or carboxyl groups) are used to complex titanium atoms. Another way is to mix barium and titanium precursors in a strongly basic medium. The condensation between the Ti(OH)^2-₆Ba²⁺ species directly gives the perovskite compound. Using an alkoxide-hydroxide route, a homogeneous Ba-Ti solution was prepared that completely advanced by condensation between the Ti(OH)^2-₆Ba²⁺ species and led to a controlled-stoichiometry powder. Concerning pure barium titanate, dried powders exhibited the cubic perovskite structure, and a direct sintering at 1150°C, without calcination, led to highly dense BaTiO₃ bodies with fine-grained uniform microstructure (1 μm) that exhibited a high permittivity value at room temperature ( K = 5400). The alkoxide-hydroxide method was also used to prepare dense alkaline-earth perovskite ceramics with complex compositions.     

Dielectric Behavior of Na0.5Bi0.5TiO3-Based Composites Incorporating Silver Particles

The dielectric properties of Na_0.5Bi_0.5TiO₃ (NBT) -based composites incorporating silver particles prepared by sintering at a low temperature of ∼900°C are reported. The dielectric constant increases with the amount of metal silver particles in the measured frequency range (150 Hz to 1 MHz), and could be enhanced up to ∼20 times higher than that of pure NBT ceramics, which was ascribed to the effective electric fields developed between the dispersed particles in the matrix and the percolation effect. Further investigation revealed that the dielectric constant of the composites has weak frequency and temperature dependence (−50°C to +50°C).     

Solubility of Silver and Palladium in BaTiO3

Silver, palladium, and their alloys are frequently used as electrode materials for BaTiO₃ (BT) based dielectrics. However, the electrodes and dielectrics usually are cofired at high temperatures, and silver and palladium can dissolve into the BT during cofiring. In the present study, the solubility of silver and palladium into BT after cofiring was determined. Three measurement techniques were used to determine solubility: chemical analysis, structural analysis, and dielectric analysis. The solubility of the silver in the BT was low, 450 ppm, after cofiring at 1290°C for 2 h in air. The diffusion distance of the silver ions into the BT was >5 μm. The solubility of the palladium in the BT was even lower, 50 ppm at 1290°C, and the diffusion distance was ∼1 μm. The solubility of both the silver and the palladium in the BT decreased as the oxygen partial pressure of the sintering atmosphere decreased. These results demonstrated that both silver and palladium solutes act as acceptors for BT.     

Base-Metal-Electroded BaTiO3 Capacitor Materials with Duplex Microstructures

The effect of dopants and processing conditions on the dielectric properties of base-metal-electroded materials was investigated. BaTiO₃ materials simultaneously doped with MgO and Y₂O₃ additives can achieve small capacitance variation (Δ C / C ), which meets the X7R specification, when the proportion of additives is abundant enough and the materials are not over-fired. Presumably, small Δ C / C values of thus obtained materials are the result of the formation of core–shell structure, which requires stringent control of material processing conditions. In contrast, X7R-type materials can be obtained in a much wider processing window, when prepared by mixing two BaTiO₃ materials of suitable dielectric constant–temperature ( K – T ) characteristics. Duplexed materials prepared from these two end-point BaTiO₃ materials with ratios ranging from 3:1 to 1:2 exhibit K – T behavior within the X7R specification, provided that one of the components possesses flat K – T behavior. Moreover, the dielectric properties of these materials were simulated using a simplified microstructural model. Simulation results indicate that the effective dielectric constant of core–shell materials, ( K _e)_CS, varies significantly not only with the dielectric properties of cores and shells, but also with the shell-to-core thickness ratio, whereas the effective dielectric constant of duplexed materials, ( K _e)_D, can be maintained at a very small Δ C / C value for a wide range of end-point constituent ratios, which agrees very well with the measured K – T properties for the materials.     

Kinetic Process of Reoxidation of Base Metal Technology BaTiO3-Based Multilayer Capacitors

Base metal technology, mainly using Ni electrodes in multilayer ceramic capacitors (MLCCs), is now well established. This technology requires a so-called reoxidation treatment after sintering the MLCCs in a reducing atmosphere to guarantee a sufficient electrical reliability. Large numbers of electrodes, and production of physically larger components for high-voltage components, are two technological trends that make the control of the reoxidation process rather difficult. The reoxidation process has been studied to determine oxygen diffusion pathways into commercial MLCCs, using ¹⁸O tracer diffusion and finite element calculations. In MLCCs oxygen diffusion mainly occurs along the Ni electrodes. Furthermore, the reoxidation process is mostly controlled by the thermodynamic potential of the Ni/NiO equilibrium in the interior of the capacitor, but it is the short circuit diffusion along the interface of the electrode that controls the kinetics of the oxygen transport into the interior of the capacitor device.     

Perovskite Formation and Dielectric Characteristics of Pb(Zn1/3Ta2/3)O3 with PbTiO3 Substitution

Perovskite developments in the Pb(Zn_1/3Ta_2/3)O₃–PbTiO₃ system were explored. Formation yields and lattice parameters of the perovskite were determined from X-ray diffractometry results. Weak-field low-frequency dielectric properties of the system ceramics were investigated, followed by microstructure examination. Perovskite started to develop in Pb(Zn_1/3Ta_2/3)O₃ after the introduction of 30 mol% PbTiO₃, whereas complete stabilization was accomplished at 60% substitution. Dielectric relaxation behavior was not substantial across the entire composition range, whereas phase transition modes changed from diffuse to sharp with increased PbTiO₃ fraction.     

Microwave Dielectric Properties of Low-Fired Ba5Nb4O15

The effect of B₂O₃ on the sintering temperature and microwave dielectric properties of Ba₅Nb₄O₁₅ has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba₅Nb₄O₁₅ and B₂O₃ led to formation of second phases, BaNb₂O₆ and BaB₂O₄. The addition of B₂O₃ to Ba₅Nb₄O₁₅ resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba₅Nb₄O₁₅ could be interpreted by measuring changes in the quality factor ( Q × f ), the relative dielectric constant (ɛ_r), and the temperature coefficient of resonant frequency (τ_f) as a function of B₂O₃ additions. More importantly, the formation of BaNb₂O₆ provided temperature compensation. The microwave dielectric properties of low-fired Ba₅Nb₄O₁₅ had good dielectric properties: Q × f = 18700 GHz, ɛ_r= 39, and τ_f= 0 ppm/°C.     

Sol-Gel Process for the Preparation of Ba2Ti9O20 and BaTi5O11

Barium titanate precursors with Ba/Ti ratio 2:9 and 1:5 were prepared by first hydrolyzing titanium alkoxide and then mixing the resulting titania sol with a barium alkoxide-methanol solution. After drying, the xerogels of the precursors of barium titanates were sintered at temperatures from 700°C (4 h) to 1200°C (110 h or longer). Characterization of the product was performed using X-ray diffraction and laser Raman spectroscopy. At 700°C, BaTi₅O₁₁ was formed from the 1:5 precursor and a two-phase mixture of BaTi₂O₅ and BaTi₅O₁₁ was formed from the 2:9 precursor. After prolonged heating at 1200°C, the latter mixture converted to a single-phase material, Ba₂Ti₉O₂₀.     

Preparation of BaTi4O9 from Oxalates

A barium titanate precursor with a barium:titanium ratio of 1:4 was prepared by controlled coprecipitation of mixed barium and titanium species with an ammonium oxalate aqueous solution at pH 7. The results of thermal analysis and IR measurement show that the obtained precursor is a mixture of BaC₂O₄·0.5H₂O and TiO(OH)₂·1.5H₂O in a molar ratio of 1:4. Crystallized BaTi₄O₉ was obtained by the thermal decomposition of a precipitate precursor at 1300°C for 2 h in air. The dimensions of the powder calcined at 1000°C are between 100 and 300 nm. The grain dimensions of the sintered sample for 2 h at 1300°C are of the order of 10 to 30 μm. Dielectric properties of disk-shaped sintered specimens in the microwave frequency region were measured using the TE₀₁₁ mode. Excellent microwave characteristics for BaTi₄O₉—ɛ= 38 ± 0.5, Q = 3800–4000 at 6–7 GHz and τ _f = 11 ± 0.7 ppm/°C—were found.     

Preparation, Structure, and Dielectric Properties of the System Ba1−xLaxTi1−xNixO3

Attempts have been made to synthesize the compositions with x = 0.01, 0.05, 0.10, 0.20, 0.30, 0.40, and 0.50 in the valence-compensated solid-solution Ba_1–xLa_xTi_1–xNi_xO₃ by ceramic methods. Solid solutions formed in the compositions with x0.10. The structure of the composition with x = 0.01 is tetragonal, whereas samples with x = 0.05 and 0.10 are cubic. A ferroelectric-paraelectric transition is observed only in the composition with x = 0.01 at ∼ 350 K.     

Faceting of High-Angle Grain Boundaries in Titanium-Excess BaTiO3

The grain boundaries in BaTiO₃ with excess Ti of 0.5, 0.3, and 0.1 at.% sintered at 1300° or 1250°C have been examined by scanning electron microscopy (SEM), electron backscattered diffraction pattern (EBSP), and transmission electron microscopy (TEM). In the 0.1% Ti-excess specimen, large grains growing abnormally form high-angle grain boundaries when they impinge on each other as verified by EBSP. A large fraction of these grain boundaries are faceted with hill-and-valley shapes. In the 0.5% Ti-excess specimen, large grains growing abnormally are elongated in the directions of their {111} double twins. These grains often form flat grain boundaries parallel to their {111} planes with the fine matrix grains, and the grain-boundary segments between the large impinging grains with high misorientation angles are often also parallel to the {111} planes of one of the grains. These grain boundaries are expected to be singular. Most of the grain boundaries between the randomly oriented fine-matrix grains in the 0.3 at.% Ti-excess specimen are also faceted with hill-and-valley shapes at finer scales when observed under TEM. The facet planes are parallel to {111}, {011}, and {012} planes of one of the grain pairs and are also expected to be singular. These high-angle grain boundaries lying on low index planes of one of the grain pairs are similar to those observed in other oxides and metals.     

Microstructure and Microwave Dielectric Properties of Ba(Zn1/3Ta2/3)O3 Ceramics with ZrO2 Addition

The effect of ZrO₂ on crystallographic order, microstructure, and microwave dielectric properties of Ba(Zn_1/3Ta_2/3)O₃ (BZT) ceramics was investigated. A small amount of ZrO₂ disturbed the 1:2 cation ordering. The average grain size of the BZT significantly increased with the addition of ZrO₂, which was attributed to liquid-phase formation. The relative density increased with the addition of a small amount of ZrO₂, but it decreased when the ZrO₂ content was increased. Variation of the dielectric constant with ZrO₂ addition ranged between 27 and 30, and the temperature coefficient of resonant frequency increased abruptly as the ZrO₂ amount exceeded 2.0 mol%. The Q value of the BZT significantly improved with the addition of ZrO₂, which could be explained by the increased relative density and grain size. The maximum Q × f value achieved in this investigation was ∼164 000 GHz for the BZT with 2.0 mol% ZrO₂ sintered at 1550°C for 10 h.     

Mn和Zr共掺杂钛酸锶钡/氧化镁复合陶瓷材料的微结构和介电性能

通过固相反应法制备Mn、Zr共掺杂钛酸锶钡/氧化镁陶瓷粉体,经干压成型后在空气气氛中于1450℃烧结4h,通过扫描电子显微镜和X射线衍射研究了ZrO2和MnO2共掺杂的Ba0.6Sr0.4TiO3/MgO复合陶瓷材料的微结构和介电性能。结果表明:ZrO2可以显著降低材料的介电常数和介电损耗,有效提高了陶瓷材料的温度稳定性;随ZrO2添加量的增加,体系的晶胞参数略有增加,MgO在钛酸锶钡中以独立相的形式存在;制备出的BST铁电陶瓷材料的25℃相对介电常数较低(εr<110),介质损耗小于1.0×10–3(在频率为10kHz时),温度系数小于6.012×10–3,可调性大于20%(8.0kV/mm),适用于制作移相器。