基于TCS230与LabVIEW的颜色测量系统

TCS230是TAOS(Texas Advanced Optoelectronic Solutions)公司推出的可编程彩色光到频率的转换器.本系统利用TCS230和单片机组成颜色采集小系统进行颜色采集,然后将采集的数据通过单片机串行通信传送给上位机,位机串口通信利用LabVIEW的VISA节点来完成.同时LabVIEW实现对所采集数据的处理、显示和保存.     

颜色传感器TCS230在单片机平台上的应用实现

TCS230是RGB彩色光/频率转换器。本文通过其滤光选择功能,借助单片机设计出对于三基色测量的步骤和方法,阐述了以AT89S52为核心的,能测量出颜色的具体算法,且进一步给出了相应的硬件设计电路、软件流程图和测试程序清单。最后给出的实现HSC模型算法的程序,具有通用性、能广泛应用于颜色测量和相关的三维数据的处理。     

基于TCS230数字亮度计的设计与应用

TCS230是业界首款带数字兼容接口的RGB彩色光/频率转换器。本文利用其滤光选择功能,并借助单片机设计一种以STC89C51为运算、控制核心,能够同时测量光线中所含的三基色亮度的便携式数字亮度计。实现对颜色数据的采集和处理,并将处理后的数据显示在LCD屏上。简述了利用软件对TCS230的实际颜色测量值进行校正的处理办法,给出了相应的硬件设计电路、软件流程图和测试程序清单。电路具有成本低、测量速度快、精确高、便携等特点,可广泛应用于各种需要对光色成分进行测量、分析与识别的行业。     

高精度模拟光纤传输系统

电压／频率转换器在简单低廉电路中是数模转换、精密频率／电压转换及线性频率调制的理想器件。文中根据电压／频率（V／F）转换及频率／电压（F／V）转换原理，采用PIN－FET混合集成光电接收器及相应模拟集成电路，完成了满量程达到100kHz，传输失真度＜0．1％的模拟光纤传输系统的研制。     

MAX5098A/99：双路输出DC/DC转换器

Maxim推出能够提供2A和1A输出电流的双路输出、高开关频率DC／DC转换器MAX5098A／99。转换器直接采用汽车电池供电,集成了能承受高达80V瞬态电压的抛负载保护电路,器件的工作电压可低至4．5V,以适应冷启动情况。另外,器件具有可编程的200kHz至2．2MHz宽开关频率范围,从而可以工作于AM频段以外的频率。可靠的保护特性和较宽开关频率范围使MAX5098A／99成为高端设备、仪表盘显示器和汽车广播等汽车应用的理想选择。     

2．2MHz、双路输出DC—DC转换器

Maxim Integrated Products推出能够提供2A和1A输出电流的双路输出／N开关频率DC-DC转换器MAX5098A／MAX5099。转换器直接采用汽车电池供电．集成了能承受高达80V瞬态电压的抛负载保护电路。器件的工作电压可低至4．5V,以适应冷启动情况。另外,该器件还具有可编程的200kHz～2．2MHz宽开关频率范围。从而可以工作在AM频段以外的频率。可靠的保护特性和较宽开关频率范围使MAX5098A／MAX5099成为高端设备、仪表盘显示器和汽车广播等汽车应用的理想选择。     

高速A/D转换器动态参数的计算机辅助测试

模拟／数字转换器是电子器件中比较特殊和关键的器件。随着器件时钟频率的不断提高，如何高效、准确地测试AID转换器的动态参数是当今高速A／D转换器测试研完的重点。文章以逻辑分析仪和Matlab软件为基础，运用相干采样技术，针对10位40MSPSA／D转换器动态参数的测试和基波图形恢复算法进行了深入研究。给出了研究结果，指出了测试中有待完善的地方。     

Maxim新推80V抛负载保护2．2MHz双路输出DC—DC转换器MAX5098A／MAX5099

Maxim推出能够提供2A和1A输出电流的双路输出、高开关频率DC—DC转换器MAX5098A/MAX5099。转换器直接采用汽车电池供电,集成了能承受高达80V瞬态电压的抛负载保护电路,器件的工作电压可低至4．5V,以适应冷启动情况。另外,器件具有可编程的200kHz至2．2MHz宽开关频率范围,从而可以工作于AM频段以外的频率。     

带有固定压降APD电流监视器的新型75V升压型DC／DC转换器

美国凌力尔特公司（Linear Technology Corporation）推出具有集成高端雪崩光电二极管（APD）电流监视器的固定频率、电流模式升压型DC／DC转换器LT3571芯片。该器件能从2．7～20V的输入范围提供高达75V的输出电压．因此非常适用于多种光纤的应用。     

凌特推出升压型微功率DC／DC转换器LT3473

凌特公司(Linear Technology)推出1A、1．2MHz升压型微功率DC／DC转换器LT3473，该器件采用扁平DFN封装，集成了肖特基二极管和输出断接电路。小封装尺寸、高度集成以及采用微小SMT器件可使解决方案尺寸小于50mm^2。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.