分立器件市场及其封装趋势

半导体分立器件历史悠久，是集成电路IC前世今生的基础和先导，IC的发展与应用离不开分立器件的密切配合，二者相依为伴，尤其在大功率、大电流、高反压、高频高速、高灵敏度、低噪声、射频等诸多领域起着举足轻重和不可替代的关键作用。很多先进的半导体工艺技术纷纷应用到分立器件生产中，新结构、新器件源源而来，产业规模不断壮大，成为半导体产业的一大分支。     

展览·研讨·培训信息

“中国IC产业发展战略研讨暨第六届中国半导体行业协会IC分会年会”将于2003年9月在苏州举行 2003年中国集成电路产业发展战略研讨暨产品展示会及第六届中国半导体行业协会IC分会年会将于2003年9月在江苏苏州召开。此次会议得到了苏州市政府的盛情邀请,并得到了江苏省半导体行业协会、上海市集成电路行业协会、北京市半导体行业协会、浙江省半导体行业协会、华美半导体行业协会、北美半导体行业协会、中国半导体行业协会半导体分立器件分会、中国半导体行业协会支撑分会的大力支持。     

IC China2008

“中国国际集成电路博览会暨高峰论坛”（IC China）作为国内首个涵盖整个半导体产业链的国际化专业展会,其影响力也随着国内集成电路产业的快速发展而不断提升。IC China2008以“加强产业合作、完善产业链,推动创新与发展”为主题,聚焦新兴市场为半导体产业带来的发展机遇与商机。本届展会以集成电路产业链为主轴,涵盖设计、芯片制造、封装测试、分立器件、设备材料、技术服务等产业链各环节,同时,     

分立器件发展继续呈稳健态势中国市场更具潜力

<正>1分立器件市场的现状半导体产业的发战士于分立器件,是半导体产业的最初产品,尽管集成电路的发明和集成电路的迅速发展使一些器件已集成进集成电路,但由于分立器件的特殊性,使之仍为半导体产品的重要组成     

2004年度中国十大半导体企业统计结果

为全面总结2004年国内各有关半导体企业所取得的成绩，中国半导体行业协会，中国电子信息产业发展研究院依据参加半导体行业统计企业的上报数据，分别排出了2004年度中国集成电路设计、集成电路和分立器件制造和封装测试领域的前10大企业。     

2004年度中国十大半导体企业及最具成长性企业

为全面总结2004年国内各有关半导体企业所取得的成绩,中国半导体行业协会.中国电子信息产业发展研究院依据参加半导体行业统计企业的上报数据,分别排出了2004年度中国集成电路设计、集成电路和分立器件制造和封装测试领域的前10大企业.     

IC China 2014新品预览

正2014年10月28—30日在上海新国际博览中心N1馆举办的第十二届中国国际半导体博览会暨高峰论坛围绕"应用驱动,快速发展"的主题,为从事集成电路设计、芯片加工、封装测试、半导体专用设备、半导体专用材料、半导体分立器件的海内外厂商、企事业单位搭建一个展示最新成果,打造产品品牌的平台。IC China 2014作为IC产业最大规模国家级展示平台,展示范围包括IC设计与产品、IC设计工     

南朝鲜半导体工业的简要历史和展望

八十年代初,南朝鲜在半导体方面的活动仅限于生产分立器件和国外器件的封装。而现在,南朝鲜的公司已处于即将引入4兆位DRAM的阶段。本文叙述了南朝鲜电子工业、特别是半导体工业的历史,提供了南朝鲜半导体公司的背景资料,并讨论了工业中的普遍问题及将来可能的发展方向。     

IC China 2004金秋季节收获中国“芯”

1 IC China 2004展览会概况第二屆中国国际集成电路产业展览暨研讨会(IC China 2004)于2004年9月1-3日在上海光大国际会展中心拉开帏幕。此次中国国际集成电路产业展览暨研讨会是中国第一个涵盖整个集成电路产业链的国际化专业大展。秉承首届展会“推动整个产业链互动发展“的办会宗旨,内容包括集成电路和半导体分立器件产品及其应用、集成电路设计、芯片制造、封装、     

我国半导体工业发展前景分析（续）

我国半导体工业发展前景分析（续）中国半导体行业协会顾问许居衍４．２我国半导体生产发展走势市场分析表明，我国２０００年集成电路消费值将占半导体总额的７０％左右，而且从目前形势看，分立器件生产不太可能有戏剧性的变化，因此可以基于当前的实际增长做分析。集成...     

The Electromagnetic Compatibility of Integrated Circuits—Past, Present, and Future

Throughout the decades of continuous advances in semiconductor technology, from the discrete devices of the late 1950s to today's billon-transistor system-on-chip, there have always been concerns about the ability of components to operate safely in an increasingly disruptive electromagnetic environment. This paper provides a nonexhaustive review of the research work conducted in the field of electromagnetic compatibility (EMC) at the IC level over the past 40 years. It also brings together a collection of information and trends in IC technology, in order to build a tentative roadmap for the EMC of ICs until the year 2020, with a focus on measurement methods and modeling approaches.      

Implementing IC based designs for 3.3-V supplies

Many of today's VLSI chips operate at 3.3V, ultimately requiring DC-DC converters that are light, small, and ideally, realized in IC technology. Recent developments in switching-mode power supplies, which contain no magnetic devices have the potential to satisfy the above requirements. These supplies contain only switched-capacitor elements in the power stage, a necessary condition for implementing low-voltage power sources with ICs. We present a new architecture using discrete devices that offers significant potential in IC-based supplies     

Advanced power semiconductors and ICs for DC/DC converter applications

This paper describes recent advances in power semiconductor devices, integrated circuits, and packages for DC/DC converter applications. Special emphasis is placed on the latest discrete power MOSFET devices and packages. Features and trends in ICs for control of synchronous buck converters are highlighted as well. The paper will also cover a new class of miniaturized hybrid assembly that sets new efficiency standards for high current low output voltage applications.     

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate.     

Reliability of diagnostic methods based on low-frequency noise analysis

Various methods for separating an integrated circuit (IC) batch were considered using noise parameters for the purpose of determining their reliability. The existing methods for screening semiconductor products using low-frequency (LF) noise were tested on transistors, as well as both digital and analog ICs, and showed good results. Selection criteria for semiconductor products were determined based on the statistics of a representative sample; however, their reliability was not estimated. The calculation of the correlation coefficient of determined LF noise parameters and reference reliability testing results was taken as the basis of the determination of reliability of diagnostic methods. For the experiment, KR142EN5A ICs made by bipolar technology were selected, which represent three-pin stabilizers with a fixed output voltage from 5 V and are used in many radio-electronic devices.     

基于加速退化试验的模拟IC寿命评估研究

为解决高可靠性、长寿命模拟集成电路的寿命评估问题,结合半导体器件退化失效的特点,提出了基于加速退化试验的模拟集成电路寿命评估方法。在此基础上,以某型电压基准模拟IC为研究对象,通过对退化数据的分析研究,获得了其在正常工作应力下的寿命数据。     

国外模拟集成电路近期发展动态

近年来,由于器件工艺水平的提高和电路设计技术的改进,模拟集成电路获得了很大的发展。席卷世界先进工业国家的三“A”革命(工厂自动化、办公室自动化和家庭自动化)和各种高精尖的军事装备,使品种繁多的模拟电路找到了用武之地。目前,国外半导体厂家正在竞相开发新的品种,并且不断扩大其应用范围,本文拟对应用比较广泛的几种主要模拟集成电路在国外的发展情况作一简单介绍。     

Simulating the exposure of ICs to voltage surges caused by nuclear explosions

A uniform strategy is developed for testing discrete semiconductor devices and ICs for voltagesurge hardness, allowing comparison of differing models including ICs of high functional complexity. Performance specifications are defined, justified, and implemented for a voltage-surge simulator intended for electrical-overstress hardness tests of ICs. On this basis, a test bed is designed and built for evaluating the hardness of advanced ICs to voltage-surge effects, whether transient or permanent. A procedure is developed for predicting the electrical-overstress hardness of ICs, which enables one to detect both out-of-tolerance and functional failures during testing. The procedure and the test setup are validated by experiments with specific ICs.     

半导体技术对无源电子元件发展的影响

经过半个世纪的发展,半导体技术不仅在制造功能强大的IC及各式各样的半导体分立器件方面,对社会发展起到不可估量的推动作用,而且对其他技术领域也产生了深刻的影响。在当前世界经济衰退浪潮的冲击下,无源电子元件领域借鉴、融合半导体技术以提高自身创新能力,加快产品升级是抵御冲击的值得关注的措施之一。     

An overview of standards in electromagnetic compatibility for integrated circuits

The characterization of the electromagnetic compatibility (EMC) performance of integrated circuits (ICs) is receiving increasing focus as new applications and technology trends combine to raise the complexity of EMC compliance. The increased focus is driving the need for standardized measurement procedures to enable consistent evaluation and comparison of different devices. This paper discusses the need for standardization, describes the work in process by IEC TC47/SC47A Working Group 9 to standardize emissions and immunity EMC test methods for ICs, and examines trends in IC EMC.