Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics

The effect of the addition of V₂O₅ on the structure, sintering and dielectric properties of M -phase (Li_{1+ x − y} Nb_{1− x −3 y} Ti _x +4 _y )O₃ ceramics has been investigated. Homogeneous substitution of V⁵⁺ for Nb⁵⁺ was obtained in LiNb_{0.6(1− x )}V_{0.6 x} Ti_0.5O₃ for x ≤ 0.02. The addition of V₂O₅ led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]_r= 66, Q × f = 3800 at 5.6 GHz, and τ_f= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V₂O₅-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Microwave Dielectric Properties of a New A5B4O15-Type Cation-Deficient Perovskite Ba2La3Ti3TaO15

High dielectric constant and low loss ceramics with composition Ba₂La₃Ti₃TaO₁₅ have been prepared by a conventional solid-state ceramic route. This compound adopts A₅B₄O₁₅ cation-deficient hexagonal perovskite structure. The dielectric properties of dense ceramics sintered in air at 1520°C have been characterized at microwave frequencies. It shows a relative dielectric constant of ∼45, quality factor Q _u× f of ∼26 828 GHz and temperature variation of resonant frequency of −0.97 ppm/°C.     

A- and B Site Cosubstituted Ba6−3xSm8+2xTi18O54Microwave Dielectric Ceramics

Tin (Sn) substitution into the B-site and Nd/Sn cosubstitution into the A- and B-sites were investigated in a Ba _{6−3 x} Sm_{8+2 x} Ti₁₈O₅₄solid solution ( x = 2/3). A small amount of tin substitution for titanium improved the temperature coefficient of resonant frequency (τ_f) but led to a decrease of the relative dielectric constant (ɛ) and the quality factor ( Qf ). The Ba_{6−3 x} Sm_{8+2 x} (Ti_{1− z} Sn_z)₁₈O₅₄-based tungsten-bronze phase became unstable for compositions with a tin content of ≥10 mol%, where BaSm₂O₄and Sm₂(Sn,Ti)₂O₇appeared, and finally, these phases became the major phases. On the other hand, Nd/Sn cosubstitution led to a good combination of high ɛ, high Qf , and near-zero τ_f. Excellent microwave dielectric properties were achieved in Ba_{6−3 x} (Sm_{1− y} Nd _y )_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ceramics with y = 0.8 and z = 0.05 sintered at 1360°C for 3 h: ɛ= 82, Qf = 10 000 GHz, and calculated τ_f=+17 ppm/°C. The tolerance factor and electronegativity difference exhibited important effects on the microwave dielectric properties, especially the Qf value. A large tolerance factor and high electronegativity difference generally led to a higher Qf value.     

Bismuth/Samarium Cosubstituted Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Modification of the microwave dielectric properties in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 0.5) solid solutions by Bi/Sm cosubstitution for Nd was investigated. A large increase in the dielectric constant and near-zero temperature coefficient combined with high Qf values were obtained in modified Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ solid solutions where an enlarged solid solution limit of Bi in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ was observed. Excellent microwave dielectric characteristics (ɛ= 105, Qf = 4110 GHz, and very low τ_f) were achieved in the composition Ba_{6−3 x} (Nd_0.7Bi_0.18Sm_0.12)_{8+2 x} Ti₁₈O₅₄.     

Preparation of Ba6−3xNd8+2xTi18O54 via Ethylenediaminetetraacetic Acid Precursor

Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ceramic powders were synthesized by the modified Pechini method using ethylenediaminetetraacetic acid (EDTA) as a chelating agent. A purplish red, molecular-level, homogeneously mixed gel was prepared, and transferred into a porous resin intermediate through charring. Single-phase and well-crystallized Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ powders were obtained from pulverized resin at a temperature of 900°C for 3 h, without formation of any intermediate phases. Meanwhile, the molar ratio of EDTA to total metal cation concentration had a significant influence on the crystallization behavior of Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄. The Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 2/3) ceramics prepared via EDTA precursor have excellent microwave dielectric characteristics: ɛ= 87, Qf = 8710 GHz.     

Effects of La on Dielectric and Piezoelectric Properties of Pb1−xLa2x/3(Nb0.95Ti0.0625)2 O6 Ceramics

Ceramics with the chemical compositions of Pb_{1− x} La_{2 x /3}(Nb_0.95Ti_0.0625)₂O₆ (0≤ x ≤0.060) (PLTN) were prepared by the conventional solid-state reaction method. X-ray diffraction analysis indicated that Ti and La doping not only decreased the rhombohedral–tetragonal phase transformation temperature, but also stabilized the orthorhombic phase of PLTN ceramics. All ceramics sintered at 1190°–1250°C had shown the pure orthorhombic ferroelectric phase. La doping suppresses grain growth and inhibits the formation of pores and cracks, resulting in an increase in relative density up to 97%. The amount of La doping to PLTN ceramics obviously affect ceramics' piezoelectric constant ( d ₃₃) and dielectric loss (tanδ). The sample with x =0.015 possesses high Curie temperature ( T _c=560°C), low dielectric loss (tanδ=0.0054), and excellent piezoelectric constant ( d ₃₃=92 pC/N), presenting a high potential to be used in high-temperature applications as piezoelectric transducers.     

Effect of Bismuth Borate/LiF on the Sintering, Thermal, and Microwave Dielectric Properties of Ba6−3xSm8+2xTi18O54 (x=2/3) Solid Solution

Ba_{6−3 x} Sm_{8+2 x} Ti₁₈O₅₄ ( x =2/3) (BST) was prepared by the solid-state method and the effect of bismuth borate (BB)/LiF on the sinterability, microstructure, and thermal and microwave dielectric properties were studied. BST+3.5 wt% BB+0.5 wt% LiF composite sintered at 1050°C has Q × f =4500 GHz, ɛ=52, and τ _f =+6 ppm/°C. Raman spectrum of the composite was compared with that of BST and the structural changes were investigated.     

Low-Dielectric Loss Characteristics of Nd(Co1/2Ti1/2)O3 Ceramics at Microwave Frequencies

The microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ (NCT) ceramics using starting powders of Nd₂O₃, CoO, and TiO₂ prepared by the conventional solid-state route have been researched. The dielectric constant values (ɛ_r) saturated at 24.8–27. Quality factor ( Q × f ) values of 37 900–140 000 (at 9 GHz) and the measured τ_f values ranging from −45 to −48 ppm/°C can be obtained when the sintering temperatures are in the range of 1410°–1500°C. The ɛ_r value of 27, the Q × f value of 140 000 (at 9 GHz) and the τ_f value of −46 ppm/°C were obtained for NCT ceramics sintered at 1440°C for 4 h. For applications of high selective microwave ceramic resonator, filter, and antenna, NCT is proposed as a suitable material candidate.     

The Li2O–Nb2O5–TiO2 Composite Microwave Dielectric Ceramics with Adjustable Permittivities

A group of new y M-phase/(1− y ) Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ composite ceramics with adjustable permittivities for low-temperature co-fired ceramic applications was initially investigated in the study. The 0.5 M-phase/0.5 Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ ( x =0.01, 0.02, 0.04, 0.06, 0.081) composite ceramics were first investigated to find the appropriate "Li₂TiO₃ss" composition ( x value). The best dielectric properties of ɛ_r=40.1, Q × f values up to 9318 GHz, τ_f=25 ppm/°C, were obtained for the ceramics composites at x =0.02. Based on the good dielectric properties, the suitable "Li₂TiO₃ss" composition with x =0.02 was mixed with the Li_1.0Nb_0.6Ti_0.5O₃ powder as the ratio of y "M-phase"/(1− y ) "Li₂TiO₃ss" ( y =0.2, 0.4, 0.5, 0.6, 0.8). By adjusting the y values, the group of composite ceramics could exhibit largely are adjustable permittivities varying from ∼20 to ∼60, while Q × f and τ_f values relatively good. Nevertheless, in this study, because there are interactions between the M-phase and Li₂TiO₃ss during sintering process, their microwave dielectric properties could not be predicted precisely by the empirical model.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

Structural and Dielectric Properties of Ag(Nb0.8Ta0.2)1−xSbxO3 (x≤0.08) Ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of Sb substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The perovskite Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics showed no obvious change with x value being no more than 0.08, and the pseudoperovskite unit cell parameters a = c , b and monoclinic angle β decrease with Sb concentration increasing. The dielectric properties of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics were found to be affected greatly by the substitution of Sb for Nb/Ta. The ɛ value of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics sintered at their densified temperature increased from 480 to 825 with x from 0 to 0.08, the tan δ value decreased sharply from 0.0065 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept a stable lower tan δ value ∼0.0024 with x to 0.08. The temperature coefficient of capacitance values continuously decreased from a positive value of 1450 ppm/°C for x =0 to a negative value of −38.52 ppm/°C for x =0.08.     

Subsolidus Phase Relationships in the Ga2O3–Al2O3–TiO2 System

Subsolidus phase relationships in the Ga₂O₃–Al₂O₃–TiO₂ system at 1400°C were studied using X-ray diffraction. Phases present in the pseudoternary system include TiO₂ (rutile), Ga_{2−2 x} Al_{2 x} O₃ ( x ≤0.78 β-gallia structure), Al_{2−2 y} Ga_{2 y} O₃ ( y ≤0.12 corundum structure), Ga_{2−2 x} Al_{2 x} TiO₅ (0≤ x ≤1 pseudobrookite structure), and several β-gallia rutile intergrowths that can be expressed as Ga_{4−4 x} Al_{4 x} Ti _{n −4}O_{2 n −2} ( x ≤0.3, 15≤ n ≤33). This study showed no evidence to confirm that aluminum substitution of gallium stabilizes the n =7 β-gallia–rutile intergrowth as has been mentioned in previous work.     

Influence of Non-Stoichiometry on the Structure and Properties of Ba(Zn1/3Nb2/3)O3 Microwave Dielectrics: I. Substitution of Ba3W2O9

A narrow region of Zn-vacancy-containing cubic perovskites was formed in the (1− x )Ba₃(ZnNb₂)O₉−( x )Ba₃W₂O₉ system up to 2 mol% substitution ( x =0.02). The introduction of cation vacancies enhanced the stability of the 1:2 B-site ordered form of the structure, Ba(Zn_{1− x} □ _x )_1/3(Nb_{1− x} W _x )_2/3O₃, which underwent an order–disorder transition at 1410°C, ∼35° higher than pure Ba(Zn_1/3Nb_2/3)O₃. The Zn vacancies also accelerated the kinetics of the ordering reaction, and samples with x =0.006 comprised large ordered domains with a high lattice distortion ( c/a =1.226) after a 12 h anneal at 1300°C. The tungstate-containing solid solutions can be sintered to a high density at 1390°C, and the resultant ordered ceramics exhibit some of the highest microwave dielectric Q factors ( Q × f =1 18 000 at 8 GHz) reported for a niobate-based perovskite.     

Ultra-Fine Ba2Ti9O20 Powders Synthesized by Inverse Microemulsion Processing and their Microwave Dielectric Properties

A double–inverse microemulsion (IME) process is used for synthesizing nano-sized Ba₂Ti₉O₂₀ powders. The crystallization of powders thus obtained and the microwave dielectric properties of the sintered materials were examined. The IME-derived powders are of nano-size (∼21.5 nm) and possess high activity. The BaTi₅O₁₁, intermediate phase resulted when the IME-derived powders were calcined at 800°C (4 h) in air. However, high-density Ba₂Ti₉O₂₀ materials with a pure triclinic phase (Hollandite like) can still be obtained by sintering such a BaTi₅O₁₁ dominated powders at 1250°C/4 h. The phase transformation kinetics for the IME-derived powders were markedly enhanced when air was replaced by O₂ during the calcinations and sintering processes. Both the calcination and densification temperatures were reduced by around 50°C compared with the process undertaken in air. The microwave dielectric properties of sintered materials increase with the density of the samples, resulting in a large dielectric constant ( K ≅39) and high-quality factor ( Q × f ≅28 000 GHz) for samples possessing a density higher than 95% theoretical density, regardless of the sintering atmosphere. Overfiring dissociates Ba₂Ti₉O₂₀ materials and results in a poor-quality factor.     

Effects of B2O3 on the Phase Stability of Ba2Ti9O20 Microwave Ceramic

Preparation of dense and phase-pure Ba₂Ti₉O₂₀ is generally difficult using solid-state reaction, since there are several thermodynamically stable compounds in the vicinity of the desired composition and a curvature of Ba₂Ti₉O₂₀ equilibrium phase boundary in the BaO–TiO₂ system at high temperatures. In this study, the effects of B₂O₃ on the densification, microstructural evolution, and phase stability of Ba₂Ti₉O₂₀ were investigated. It was found that the densification of Ba₂Ti₉O₂₀ sintered with B₂O₃ was promoted by the transient liquid phase formed at 840°C. At sintering temperatures higher than 1100°C, the solid-state sintering became dominant because of the evaporation of B₂O₃. With the addition of 5 wt% B₂O₃, the ceramic yielded a pure Ba₂Ti₉O₂₀ phase at sintering temperatures as low as 900°C, without any solid solution additive such as SnO₂ or ZrO₂. The facilities of B₂O₃ addition to the stability of Ba₂Ti₉O₂₀ are apparently due to the eutectic liquid phase which accelerates the migration of reactant species.     

Modification of MgAl2O4 Microwave Dielectric Ceramics by Zn Substitution

MgAl₂O₄ microwave dielectric ceramics were modified by Zn substitution for Mg, and their dielectric characteristics were evaluated, along with their structures. Dense (Mg_{1− x} Zn _x )Al₂O₄ ceramics were obtained by sintering at 1550°–1650°C in air for 3 h, and the (Mg_{1− x} Zn _x )Al₂O₄ solid solution was determined in the entire composition range. With Zn substitution for Mg, the dielectric constant ɛ of MgAl₂O₄ just varied from 7.90 to 8.56, while the Q × f value had significantly improved up to a maximal value of 106 000 GHz at x =1.0. Moreover, the τ_f of MgAl₂O₄ ceramics had declined from −73 to −63 ppm/°C.     

Orientation Relationships of Reactively Grown Ba6Ti17O40 and Ba2TiSi2O8 on BaTiO3 (001) Determined by X-ray Diffractometry

Fresnoite grows at 700° and 800°C, and Ba₆Ti₇O₄₀ grows at 1200°C with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured fresnoite is formed at higher temperatures. The SiO₂ films react with the BaTiO₃ crystals, forming the phases Ba₂TiSi₂O₈ (fresnoite) and Ba₆Ti₁₇O₄₀. At 700° and 800°C, both phases grow with definite orientations, which are determined by X-ray diffraction pole figure analysis. Partially textured polycrystalline phases are formed at higher temperatures.     

Synthesis and Microwave Dielectric Properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) Ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re₃Ga₅O₁₂ ceramics sintered at 1350°–1500°C had a high-quality factor ( Q × f ) ranging from 40 000 to 192 173 GHz and a low-dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm₃Ga₅O₁₂ ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛ_r=12.4, Q × f =192 173 GHz, and τ_f=−19.2 ppm/°C.     

Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Bi₂O₃ was added to a nominal composition of Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi₂O₃ content was <8.0 mol%, a porous microstructure with Bi₄(SiO₄)₃ and SiO₂ second phases was developed in the specimen sintered at 885°C. However, when the Bi₂O₃ content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ_r=7.6, and τ_f=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi₂O₃ sintered at 885°C for 2 h.