硅基平面螺旋电感的等效电路模型和参数提取

针对螺旋电感传统等效电路模型的不足,提出了一种改进形式的集总参数等效电路模型.该等效电路模型能很好地反映出电感参数随频率变化的实际效应,可适用于从低频到自谐振频率的宽频带范围.同时,应用电磁场全波分析方法对CMOS工艺下平面螺旋电感进行仿真分析.从得到的散射参数中提取电感L、Q值及自谐振频率.基于参数优化和曲线拟合技术,给出了等效电路模型中各个元件值的多变量闭合表达式.这些表达式可方便地用于集成电路的设计和优化,从而提高电路设计的性能和效率.     

GaAs MMIC用无源元件的模型

制作了不同结构参数的GaAs MMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用.并提取得到MIM电容的单位面积电容值,约为195pF/mm2,NiCr薄膜电阻的方块电阻约为16.1Ω/□.分析结构参数对螺旋电感性能的影响可知,减小线圈面积相关的寄生损耗有助于获得高品质的电感.     

GaAs MMIC用无源元件的模型

制作了不同结构参数的GaAs MMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用.并提取得到MIM电容的单位面积电容值,约为195pF/mm2,NiCr薄膜电阻的方块电阻约为16.1Ω/□.分析结构参数对螺旋电感性能的影响可知,减小线圈面积相关的寄生损耗有助于获得高品质的电感.     

石墨烯片上螺旋电感的射频建模和参数提取

基于物理原理,对石墨烯螺旋电感提出了一种改进的等效电路模型,该模型在传统π模型的串联支路中增加了RC并联网络.并结合分析法和优化法,对此模型提出了一种参数提取方法.结果表明,在1～40 GHz频率范围内,测试所得S参数和模型仿真所得S参数能够高度地吻合.     

射频平面螺旋电感的性能分析与设计仿真

在建立集成电感的传输线模型基础上,给出了集成电感模型参数的提取方法,介绍了各寄生参数的含义,并给出了集成电感的寄生参数方程,同时给出了平面螺旋电感电感值的计算及其在电路中的应用方法.     

微波LTCC内埋置电感设计与参数提取

采用单π拓扑结构建立LTCC内埋置电感等效电路模型,并利用此模型来提取有效参数及各种寄生参数;采用相对介电常数为7.8、介质损耗为0.0015的微波陶瓷材料,以及银作为内电极,设计出400 MHz频率下大小为6.6 nH的LTCC内埋置螺旋电感,自谐振频率达2.2 GHz,最大Q值为50.2.     

石墨烯片上螺旋电感的射频建模和参数提取（英文）

基于物理原理,对石墨烯螺旋电感提出了一种改进的等效电路模型,该模型在传统π模型的串联支路中增加了RC并联网络.并结合分析法和优化法,对此模型提出了一种参数提取方法.结果表明,在1～40 GHz频率范围内,测试所得S参数和模型仿真所得S参数能够高度地吻合.     

基于单π模型的RF螺旋电感模型及参数提取法

提出了一种基于单π模型的RF螺旋电感等效电路模型及参数提取方法。该模型在传统单π模型基础上,增加支路间的并联RC网络来表征衬底耦合。在串联支路,增加RL网络来模拟趋肤效应和邻近效应。采用分频段的方法来合理简化等效电路。采用直接解析法来获得等效电路网络中所有的模型参数,无需任何优化。验证结果表明,在0~40 GHz范围内,模型值与仿真值吻合较好。该模型及参数提取方法不仅能简化计算量,还能更好地解释电路行为,对RFIC设计有参考价值。     

硅衬底片上螺旋电感宽带2π等效电路模型

针对高损耗硅衬底,基于部分元等效电路方法和全耦合变压器模型,建立了一种新的片上螺旋电感物理模型.该模型考虑了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感中串联电感和串联电阻频率特性的制约,并通过2π等效电路结构计入了电感中寄生电容的分布特性.通过与全波分析方法对比,验证了在15GHz范围内由该模型导出的等效电感、等效电阻和Q值误差均在8%以内.该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨.     

硅衬底片上螺旋电感宽带2π等效电路模型

针对高损耗硅衬底,基于部分元等效电路方法和全耦合变压器模型,建立了一种新的片上螺旋电感物理模型.该模型考虑了趋肤效应、邻近效应和衬底涡流损耗对螺旋电感中串联电感和串联电阻频率特性的制约,并通过2π等效电路结构计入了电感中寄生电容的分布特性.通过与全波分析方法对比,验证了在15GHz范围内由该模型导出的等效电感、等效电阻和Q值误差均在8%以内.该模型可望用于硅基射频集成电路中电感的优化设计和进一步的理论探讨.     

双层螺旋RF MEMS电感的模拟与设计

分析了双层螺旋电感的等效电路模型,研究了一种与传统CMOS工艺兼容的MEMS工艺,通过腐蚀电感结构下的硅衬底使电感悬空.利用HFSS软件对一些双层螺旋微电感进行了模拟,模拟结果表明,相比传统单层电感,双层电感可以减少60%的芯片面积,10nH的电感也只需要很小的面积,经过MEMS后处理的双层螺旋电感的最大Q值都超过了20.     

Design, Optimization of RF Spiral Inductors Using Scalable Compact and Accurate Models

This paper presents a practical and structured approach to the design and optimization of RF spiral inductors. The accuracy of proposed modified accurate distributed and scalable compact lumped models are quantitatively compared with experimental results. Based on the new scalable compact lumped model, a quality factor optimization engine is verified. The inductors under study include single/double layer inductors, metallization shunted as well as octagonal shaped inductors. Experimental results suggest that the new modified accurate distributed model is more accurate than existing models for predicting spiral inductor performance to even beyond resonance frequencies. In addition, using a self developed optimization engine, the new scalable compact model is sufficiently accurate in determining the optimum inductor geometry. Consequently, a web-based program (SISOP) is developed to provide RF designers total solution to spiral inductor design, optimization and integration of spiral inductor model into their lump circuit simulators.     

A simple parameter extraction method of spiral on-chip inductors

Accurate measurement and parameter extraction for spiral inductors are very important in monolithic microwave integrated circuit (MMIC) design. In this paper, we have proposed an easy and simple model parameter extraction method of wide-band on-chip inductor. The simple extraction methodology is applied to extract parameters from the measured S-parameters of spiral inductors fabricated with 0.18-/spl mu/m CMOS technology. Model prediction shows excellent agreement with the measured data over a wide frequency region. Also, the model can be easily integrated in SPICE-compatible simulators because all the elements are frequency independent. This method will provide practical and useful circuit parameters for MMIC design.     

A closed-form integral model of spiral inductor using the Kramers-Kronig relations

In this letter, a closed-form integral model is presented for the rectangular micromachined spiral inductor. The Kramers-Kronig relations provide an elegant theory to describe the inductor behavior without having complicated geometric analysis. Simulation and measurement results validate that the model can provide satisfactory prediction to the inductance of on-chip freely-suspended spiral inductors. Meanwhile, unlike conventional Greenhouse-based formulations, the self-resonant frequency of inductor can be predicted using the integral model.     

新颖的衬底pn结隔离型硅射频集成电感

提出了一种新的减小硅集成电感衬底损耗的方法 .这种方法是直接在硅衬底形成间隔的 pn结隔离以阻止螺旋电感诱导的涡流 .衬底 pn结间隔能用标准硅工艺实现而不需另外的工艺 .本文设计和制作了硅集成电路 ,测量了硅集成电感的 S参数并且从测量数据提取了电感的参数 .研究了衬底结隔离对硅集成电感的品质因素 Q的影响 .结果表明一定深度的衬底结隔离能够取得很好的效果 .在 3GHz,衬底 pn结隔离能使电感的品质因素 Q值提高4 0 % .     

S-parameter formulation of quality factor for a spiral inductor in generalized two-port configuration

This paper formulates various quality (Q) factors associated with the applications of on-chip spiral inductors to radio-frequency integrated circuits using S-parameters. The formulations start with the Q factor of a spiral inductor in a generalized two-port configuration based on a new complex-power approach and then extend to the Q factors of a tank and matching circuits that use the spiral inductors. In the demonstration, the two-port S-parameters for a series of CMOS spiral inductors have been measured to further generate such various Q factors for a many-sided evaluation of the inductor performance.     

Analytical wide-band modeling of high frequency resistance in integrated spiral inductors

For integrated spiral inductor synthesis, designers and design automation tools require efficient modeling techniques during the initial design space exploration process. In this paper, we introduce an analytical frequency-dependent resistance model for integrated spiral inductors. Based on our resistance formulation, we have developed a systematic technique for creating wide-band circuit models for accurate time domain simulation. The analytical resistance model provides a fast alternative to field solver-based approaches with typical errors of less than 2.6 percent while surpassing the accuracy of several other analytical modeling techniques by an order of magnitude. Furthermore, the wide-band circuit generation technique captures the frequency-dependent resistance of the inductor with typical errors of less than 3.2 percent.     

新颖的衬底pn结隔离型硅射频集成电感

提出了一种新的减小硅集成电感衬底损耗的方法.这种方法是直接在硅衬底形成间隔的pn结隔离以阻止螺旋电感诱导的涡流.衬底pn结间隔能用标准硅工艺实现而不需另外的工艺.本文设计和制作了硅集成电路,测量了硅集成电感的S参数并且从测量数据提取了电感的参数.研究了衬底结隔离对硅集成电感的品质因素Q的影响.结果表明一定深度的衬底结隔离能够取得很好的效果.在3GHz,衬底pn结隔离能使电感的品质因素Q值提高40%.     

硅衬底RF集成电路中螺旋电感的建模和分析

对硅衬底RF集成电路中的螺旋电感进行电磁场建模,考虑了衬底损耗效应,并通过电路分析和网络分析技术得到了二端口简化电感模型.该模型在特定的截止频率以下可提供可靠的电路系统仿真.利用该模型分析了硅衬底的损耗对螺旋电感品质因素(Q)的影响.