Positioning beacon system using digital camera and LEDs

This paper is on a novel use of lighting or signaling devices constructed by light-emitting diodes (LEDs) as a positioning beacon. The idea is that the surface of the LED lighting device is divided into regions and used to show different visual patterns that are not noticeable by the human eye due to the high-frequency switching of the LEDs. A digital camera is used as a receiver to capture a sequence of images of the LED positioning beacon transmitter. Image-processing algorithms are used to decode the location code that is encoded in the visual patterns transmitted by the LED device. This idea can be applied to any LED traffic lights or signaling devices on the road and turn them into parts of a positioning beacon system. Such a system made up of high-brightness visible LEDs can provide the function of open-space wireless broadcasting of the positioning signal. The LED signaling method, transmission protocol, camera frame rate, LED flash rate, together with an implemented system and the experimental results, are presented in this paper.     

倒装芯片衬底粘接材料对大功率LED热特性的影响

针对倒装芯片(Flipchip)大功率发光二极管器件,描述了大功率LED器件的热阻特性,建立了Flipchip衬底粘接材料的厚度和热导系数与粘接材料热阻的关系曲线,以三类典型粘接材料为例计算了不同厚度下的热阻,得出了Flipchip衬底粘接材料选择的不同对大功率LED的热阻存在较大影响的结论.     

功率LED柔性封装结构的设计与热特性分析

根据功率LED的柔性封装要求,提出了基于贴片式(SMD)封装的功率型LED柔性封装结构。对各层结构进行了优化设计,采用有限元分析(FEA),模拟了柔性封装结构LED的热场分布。对比研究了柔性LED与传统封装结构LED的热特性,并对弯曲状态下柔性衬底材料对芯片的应力进行了分析。结果表明,采用金属Cu箔衬底的柔性封装结构,其散热特性较好;Cu/超薄玻璃复合衬底替代Cu箔衬底,可以减少弯曲的应力,减少幅度达到2.5倍,散热特性基本相同。SMD柔性封装的LED不仅具有较好的热稳定性,且具有柔性可挠曲特性,其应用潜力很大。     

Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper

III-nitride light-emitting diodes (LEDs) grown on Si (111) substrates have the potential of low-cost manufacturing for solid-state lighting and display, by taking advantage of the well-developed IC technologies of silicon. In this letter, LEDs grown on silicon substrates were transferred onto copper substrates, to maximize light extraction and heat dissipation. On Si substrates, $hbox{300} times hbox{300} muhbox{m}^{2}$ multiple quantum well InGaN LEDs were first grown and processed. The top surface of the fabricated devices was then temporarily bonded to a sapphire wafer and the Si substrate was chemically etched. Ti/Al/Ti/Au layers were deposited on the backside of LEDs. An 80-$muhbox{m}$ -thick copper layer was electroplated and the temporary bonding was removed, resulting in LEDs on copper substrate. The optical output power of LEDs on copper increased by $sim$ 70% as compared to that of the LEDs on silicon. The improved performance was attributed to the removal of the light-absorbing Si substrate and the good thermal conductivity of copper.      

Fabrication of flexible AlGaInP LED

Flexible light-emitting diodes(LEDs)are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10–30μm to a flexible substrate is utilized.However,the yield is low,and it is not applicable to thick GaN LED chips with a 100μm sapphire substrate.In this paper,transferable LED chips utilized the mature LED manufacture technique are developed,which possesses the advantage of high yield.The flexible LED array demonstrates good electrical and optical performance.     

Water‐Based Isotropically Conductive Adhesives: Towards Green and Low‐Cost Flexible Electronics

This paper reports the first high‐performance water‐based isotropically conductive adhesives (WBICAs) – a promising material for both electrical interconnects and printed circuits for ultralow‐cost flexible/foldable printed electronics. Through combining surface iodination and in situ reduction treatment, the electrically conductivity of the WBICAs are dramatically improved (8 × 10^‐5 Ω cm with 80 wt% of silver); moreover, their reliability (stable for at least 1440 h during 85 °C/85% RH aging) meets the essential requirements for microelectronic applications. Prototyped applications in carrying light emitting diode (LED) arrays and radio frequency identification (RFID) antennas on flexible substrates were demonstrated, which showed satisfactory performances. Moreover, their water‐based character may render them more environmentally benign (no volatile organic chemicals involved in the printing and machine maintenance processes), more convenient in processing (reducing the processing steps), and energy economic (thermally sintering the silver fillers and curing the resin is not necessary unlike conventional ICAs). Therefore, they are especially advantageous for mass‐fabricating flexible electronic devices when coupled with paper and other low‐cost substrate materials such as PET, PI, wood, rubber, and textiles.     

Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon

(In,Ga)N light-emitting diodes (LEDs) fabricated on a sapphire growth substrate were successfully integrated onto Si substrates by a double-transfer technique using excimer laser liftoff and Pd-In transient-liquid-phase bonding. This transfer method resulted in a bonded LED heterostructure with the same orientation (p-side up) as the heterostructure before transfer from the sapphire growth substrate. Such a layer transfer approach enables a top and backside contact metallization scheme that reduces device series resistance, current crowding, and top electrode coverage area. Enhancement of the performance of the transferred LEDs was found in terms of the threshold voltage (at 20 mA) and the electroluminescence output from the front surface.     

Fabrication of 70 nm narrow metal nanowire structure on flexible PET film by nanoimprint lithography

As a promising substrate for various kinds of devices, polyethylene-terephthalate (PET) film has many advantages in terms of transparency, flexibility, chemical stability, thermal resistance, mechanical strength and low fabrication cost. In order to build actual device structure on PET substrate, micro to nanometer scale patterns of functional material have to be formed. In this work, 70 nm sized resist patterns with near zero residual layer were made on PET film, using nanoimprint lithography process, based on ‘partial filling effect’. After brief oxygen plasma treatment and e-beam evaporation of functional materials such as Cr metal, resist patterns were lifted-off with acetone solution and 70 nm sized Cr nanowire structure was uniformly formed on flexible PET substrate.     

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes

An analysis of blue and near-ultraviolet (UV) light-emitting diodes (LEDs) and material structures explores the dependence of device performance on material properties as measured by various analytical techniques. The method used for reducing dislocations in the epitaxial III-N films that is explored here is homoepitaxial growth on commercial hybride vapor-phase epitaxy (HVPE) GaN substrates. Blue and UV LED devices are demonstrated to offer superior performance when grown on GaN substrates as compared to the more conventional sapphire substrate. In particular, the optical analysis of the near-UV LEDs on GaN versus ones on sapphire show substantially higher light output over the entire current-injection regime and twice the internal quantum efficiency at low forward current. As the wavelength is further decreased to the deep-UV, the performance improvement of the homoepitaxially grown structure as compared to that grown on sapphire is enhanced.     

Light‐Emitting Electrochemical Cells Based on Color‐Tunable Inorganic Colloidal Quantum Dots

Large‐area, ultrathin light‐emitting devices currently inspire architects and interior and automotive designers all over the world. Light‐emitting electrochemical cells (LECs) and quantum dot light‐emitting diodes (QD‐LEDs) belong to the most promising next‐generation device concepts for future flexible and large‐area lighting technologies. Both concepts incorporate solution‐based fabrication techniques, which makes them attractive for low cost applications based on, for example, roll‐to‐roll fabrication or inkjet printing. However, both concepts have unique benefits that justify their appeal. LECs comprise ionic species in the active layer, which leads to the omission of additional organic charge injection and transport layers and reactive cathode materials, thus LECs impress with their simple device architecture. QD‐LEDs impress with purity and opulence of available colors: colloidal quantum dots (QDs) are semiconducting nanocrystals that show high yield light emission, which can be easily tuned over the whole visible spectrum by material composition and size. Emerging technologies that unite the potential of both concepts (LEC and QD‐LED) are covered, either by extending a typical LEC architecture with additional QDs, or by replacing the entire organic LEC emitter with QDs or perovskite nanocrystals, still keeping the easy LEC setup featured by the incorporation of mobile ions.     

Let there be light [gallium nitride LED]

The incandescent light bulb rolled back the night around the start of the 20th century. The gallium nitride LED will light the way in the 21st. The development of the gallium nitride (GaN) LED, made it possible to get white light from a semiconductor. GaN LEDs are already quietly transforming specialized illumination, including architectural and stage lighting, indoor and outdoor accent lighting, traffic and railway signaling, commercial and retail signs and displays, and outdoor illumination on bridges, walkways, gardens, and fountains. Lumen for lumen, white LEDs cost roughly 100 times as much as an incandescent bulb. Not to worry, say researchers. Not only will they get the cost down, they are going to dazzle us with devices that will be 10 times as efficient as an incandescent and will last 100 times as long. By mixing light from LEDs of different colors, the devices will provide 1000 shades of white-or any hue under the sun-at the twist of a dial.     

大功率LED用封装基板研究进展

LED被称为第四代照明光源及绿色光源,近几年来该产业发展迅猛.由于LED结温的高低直接影响到LED的出光效率、器件寿命和可靠性等,因此散热问题已经成为大功率LED产业发展的瓶颈.文章阐述了大功率LED基板的封装结构和散热封装技术的发展状况,从基板的结构特点、导热性能及封装应用等方面分别介绍了金属芯印刷电路基板、覆铜陶瓷...     

基于纳米压印PET基底的高效柔性有机电致发光器件

为了克服现有的以玻璃为基底、ITO为电极的有机电致发光器件（OLED）的韧性差、对裂纹缺陷敏感等固有缺点,对现有的OLED器件结构进行优化。本文提出了以PET为基底,旋涂高导PEDOT：PSS作为阳极的高效柔性OLED器件结构。并在此基础上,通过纳米压印蛾眼模板将光耦合结构引入器件,提高器件的光取出效率。此绿光FOLED器件在亮度为1 000 cd·m^-2时,功率效率为36.10 lm·W^-1。在此基础上,通过纳米压印引入光耦合结构的柔性OLED器件表现出良好的光电性质,在亮度为1 000 cd·m^-2时,功率效率可达到80.46 lm·W^-1。并且这种绿光柔性OLED器件在以器件半边长为曲率半径180°弯折200次后亮度衰减很少。此种高导PEDOT：PSS电极和柔性PET基底可以成为较好的ITO透明电极和刚性玻璃基底的替代物,为生产可穿戴式设备提供了可能。     

High efficiency ITO-free flexible white organic light-emitting diodes based on multi-cavity technology

The technology of white organic light-emitting diodes (WOLEDs) is attracting growing interest due to their potential application in indoor lighting. Nevertheless the simultaneous achievement of high luminous efficacy (LE), high color rendering index (CRI), very low manufacturing costs and compatibility with flexible thin substrates is still a great challenge. Indeed, very high efficiency devices show usually low values of CRI, not suitable for lighting applications, and use expensive indium tin oxide (ITO) electrodes which are not compatible with low cost and/or flexible products. Here we show a novel low cost ITO-free WOLED structure based on a multi-cavity architecture with increased photonic mode density and still broad white emission spectrum, which allows for simultaneous optimization of all device characteristics. Without using out-coupling optics or high refractive index substrates, CRI of 85 and LE as high as 33 lm W⁻¹ and 14 lm W⁻¹ have been demonstrated on ITO-free glass and flexible substrates, respectively.     

380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure

In this paper, we demonstrate the capabilities of 380‐nm ultraviolet (UV) light‐emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi‐structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al‐metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.     

Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates

A new class of thin, releasable single‐crystal silicon semiconductor device is presented that enables integration of high‐performance electronics on nearly any type of substrate. Fully formed metal oxide–semiconductor field–effect transistors with thermally grown gate oxides and integrated circuits constructed with them demonstrate the ideas in devices mounted on substrates ranging from flexible sheets of plastic, to plates of glass and pieces of aluminum foil. Systematic study of the electrical properties indicates field‐effect mobilities of ≈710 cm² V^?1 s^?1, subthreshold slopes of less than 0.2 V decade^?1 and minimal hysteresis, all with little to no dependence on the properties of the substrate due to bottom silicon surfaces that are passivated with thermal oxide. The schemes reported here require only interconnect metallization to be performed on the final device substrate, which thereby minimizes the need for any specialized processing technology, with important consequences in large‐area electronics for display systems, flexible/stretchable electronics, or other non‐wafer‐based devices.     

Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

We present a junction temperature analysis of GaInN/GaN quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro-Raman spectroscopy. The temperature was measured up to a drive current of 250 mA (357 A/cm²). We find better cooling efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire substrates we find values as high as 425 K/W. Poor thermal performance in the latter is attributed to the low thermal conductivity of the sapphire. Three-dimensional finite-element simulations show good agreement with the experimental results, validating our thermal model for the design of better cooled structures.     

带有TSV的硅基大功率LED封装技术研究

介绍了一种带有凹槽和硅通孔(through silicon via,TSV)的硅基制备以及晶圆级白光LED的封装方法。针对硅基大功率LED的封装结构建立了热传导模型,并通过有限元软件模拟分析了这种封装形式的散热效果。模拟结果显示,硅基封装满足LED芯片p-n结的温度要求。实验结合半导体制造工艺,在硅基板上完成了凹槽和通孔的制造,实现了LED芯片的有效封装。热阻测试仪测得硅基的热阻为1.068K/W。实验结果证明,这种方法有效实现了低热阻、低成本、高密度的LED芯片封装,是大功率LED封装发展的重要方向。     

High density interconnects and flexible hybrid assemblies foractive biomedical implants

Advanced microtechnologies offer new opportunities for the development of active implants that go beyond the design of pacemakers and cochlea implants. Examples of future implants include neural and muscular stimulators, implantable drug delivery systems, intracorporal monitoring devices and body fluid control systems. The active microimplants demand a high degree of device miniaturization without compromising on design flexibility and biocompatibility requirements. With the need for integrating various microcomponents for a complex retina stimulator device, we have developed a novel technique for microassembly and high-density interconnects employing flexible, ultra-thin polymer based substrates. Pads for interconnections, conductive lines, and microelectrodes were embedded into the polyimide substrate as thin films. Photolithography and sputtering has been employed to pattern the microstructures. The novel “MicroFlex interconnection (MFI)” technology was developed to achieve chip size package (CSP) dimensions without the requirement of using bumped flip chips (FC). The MFI is based on a rivet like approach that yields an electrical and mechanical contact between the pads on the flexible polyimide substrate and the bare chips or electronic components. Center to center bond pad distances smaller than 100 μm were accomplished. The ultra thin substrates and the MFI technology was proven to be biocompatible. Electrical and mechanical tests confirmed that interconnects and assembly of bare chips are reliable and durable. Based on our experience with the retina stimulator implant, we defined design rules regarding the flexible substrate, the bond pads, and the embedded conductive tracks. It is concluded that the MFI opens new venues for a novel generation of active implants with advanced sensing, actuation, and signal processing properties     

高压倒装LED照明组件的热性能

高压(HX)倒装LED是一种新型的光源器件,在小尺寸、高功率密度发光光源领域有广泛的应用前景.设计了4种不同工作电压的高压倒装LED芯片,进行了流片验证,并对其进行了免封装芯片(PFC)结构的封装实验,在其基础上研制出一种基于高压倒装芯片的PFC-LED照明组件.建立了9V高压倒装LED芯片、PFC封装器件及照明组件的模型,利用流体力学分析软件进行了热学模拟和优化设计;利用T3Ster热阻测试分析仪进行了热阻测试,验证了设计的可行性.结果表明,基于9V高压倒装LED芯片的PFC封装器件的热阻约为0.342 K/W,远小于普通正装LED器件的热阻.实验结果为基于高压倒装LED芯片的封装及应用提供了热学设计依据.