共查询到20条相似文献,搜索用时 31 毫秒
1.
Mamoru Mitomo Yoh-ichiro Sato Nobuo Ayuzawa Isamu Yashima 《Journal of the American Ceramic Society》1991,74(4):856-858
Plasma etching of β-Si3 N4 , α-sialon/β-Si3 N4 and α-sialon ceramics were performed with hydrogen glow plasma at 600°C for 10 h. The preferential etching of β-Si3 N4 grains was observed. The etching rate of α-sialon grains and of the grain-boundary glassy phase was distinctly lower than that of β-Si3 N4 grains. The size, shape, and distribution of β-Si3 N4 grains in the α-sialon/β-Si3 N4 composite ceramics were revealed by the present method. 相似文献
2.
Sintering kinetics of the system Si3 N4-Y2O3 -Al2 O3 were determined from measurements of the linear shrinkage of pressed disks sintered isothermally at 1500° to 1700°C. Amorphous and crystalline Si3 N4 were studied with additions of 4 to 17 wt% Y2 O3 and 4 wt% A12 O3 . Sintering occurs by a liquid-phase mechanism in which the kinetics exhibit the three stages predicted by Kingery's model. However, the rates during the second stage of the process are higher for all compositions than predicted by the model. X-ray data show the presence of several transient phases which, with sufficient heating, disappear leaving mixtures of β ' -Si3 N4 and glass or β '-Si3 N4 , α '-Si3 N4 , and glass. The compositions and amounts of the residual glassy phases are estimated. 相似文献
3.
Silicon nitride (Si3 N4 ) ceramics, prepared with Y2 O3 and Al2 O3 sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi2 element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y2 O3 and 3 wt% Al2 O3 . Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si3 N4 transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si2 N2 O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y2 Si2 O7 being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si3 N4 elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si3 N4 -based ceramics. 相似文献
4.
Thermal Conductivity of Gas-Pressure-Sintered Silicon Nitride 总被引:3,自引:0,他引:3
Naoto Hirosaki Yusuke Okamoto Motohide Ando Fumio Munakata Yoshio Akimune 《Journal of the American Ceramic Society》1996,79(11):2878-2882
Si3 N4 with high thermal conductivity (120 W/(m. K)) was developed by promoting grain growth and selecting a suitable additive system in terms of composition and amount. β-Si3 N4 doped with Y2 O3 -Nd2 O3 (YN system) or Y2 O3 -A12 O3 (YA system) was sintered at 1700°-2000°C. Thermal conductivity increased with increased sintering temperature because of decreased two-grain junctions, as a result of grain growth. The effect of the additive amount on thermal conductivity with the YN system was rather small because increased additive formed multigrain junctions. On the other hand, with the YA system, thermal conductivity considerably decreased with increased additive amount because the aluminum and oxygen in the YA system dissolved into β-Si3 N4 grains to form a β-SiAlON solid solution, which acted as a point defect for phonon scattering. The key processsing parameters for high thermal conductivity of Si3 N4 were the sintering temperature and additive composition. 相似文献
5.
Xinwen Zhu Tohru S. Suzuki Tetsuo Uchikoshi Yoshio Sakka 《Journal of the American Ceramic Society》2008,91(2):620-623
This paper reports the texturing behavior of β-sialon by strong magnetic field alignment (SMFA) during slip casting, followed by reaction pressureless sintering, using either α or β-Si3 N4 , Al2 O3 , and AlN as the starting materials. It is found that the β-Si3 N4 crystal exhibits a substantially stronger orientation ability than the α-Si3 N4 crystal regardless of the Si3 N4 raw powders in the magnetic field of 12 T. The β-raw powder produces a highly a , b -axis-oriented β-Si3 N4 green body with a Lotgering orientation factor of up to 0.97. During sintering, the β-raw powder allows the a , b -axis-oriented β-sialon to retain the Lotgering orientation factor similar to and even higher than that of β-Si3 N4 in the green body. In contrast, the α-raw powder leads to a faster transformation rate of α/β-Si3 N4 to β-sialon but a substantially lower texture in β-sialon. The results indicate that the use of the β-raw powder is more efficient for producing highly textured β-sialon via SMFA than that of the α-raw powder as well as the prolonged sintering. 相似文献
6.
Dong-Duk Lee Suk-Joong L. Kang Gunter Petzow Duk N. Yoon 《Journal of the American Ceramic Society》1990,73(3):767-769
By using α-Si3 N4 and β-Si3 N4 starting powders with similar particle size and distribution, the effect of α-β (β') phase transition on densification and microstructure is investigated during the liquid-phase sintering of 82Si3 N4 ·9Al2 O3 ·9Y2 O3 (wt%) and 80Si3 N4 ·13Al2 O3 ·5AIN·5AIN·2Y2 O3 . When α-Si3 N4 powder is used, the grains become elongated, apparently hindering the densification process. Hence, the phase transition does not enhance the densification. 相似文献
7.
Hisayuki Suematsu Mamoru Mitomo Terence E. Mitchell John J. Petrovic Osamu Fukunaga Naoki Ohashi 《Journal of the American Ceramic Society》1997,80(3):615-620
Single crystals of α-Si3 N4 were annealed at 2000°–2150°C. The β phase was detected after annealing at 2150°C only when the crystals were surrounded by MgO·3Al2 O3 or Y2 O3 powders. On the other hand, no evidence of the α–β transformation was found when the crystals were annealed without additives. The solution–precipitation mechanism was concluded to be the dominant factor in the α–β transformation of Si3 N4 . 相似文献
8.
Jun-Qi Li Fa Luo Dong-Mei Zhu Wan-Cheng Zhou 《Journal of the American Ceramic Society》2007,90(6):1950-1952
The influence of phase formation on the dielectric properties of silicon nitride (Si3 N4 ) ceramics, which were produced by pressureless sintering with additives in MgO–Al2 O3 –SiO2 system, was investigated. It seems that the difference in the dielectric properties of Si3 N4 ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si3 N4 , β-Si3 N4 , and the intermediate product (Si2 N2 O) in the samples. Compared with α-Si3 N4 and Si2 N2 O, β-Si3 N4 is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si3 N4 could be attributed to the ionic relaxation polarization. 相似文献
9.
Reaction and Formation of Crystalline Silicon Oxynitride in Si–O–N Systems under Solid High Pressure
Ya-Li Li Fen Zheng Yong Liang Xian-Feng Ma Suo-Jing Cui Takamasa Ishigaki 《Journal of the American Ceramic Society》2001,84(4):875-877
Oxidized amorphous Si3 N4 and SiO2 powders were pressed alone or as a mixture under high pressure (1.0–5.0 GPa) at high temperatures (800–1700°C). Formation of crystalline silicon oxynitride (Si2 ON2 ) was observed from amorphous silicon nitride (Si3 N4 ) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400°C. The Si2 ON2 coexisted with β-Si3 N4 with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si2 ON2 . Pressing a mixture of amorphous Si3 N4 of lower oxygen (1.5 wt%) and SiO2 under 1.0–5.0 GPa between 1000° and 1350°C did not give Si2 ON2 phase, but yielded a mixture of α,β-Si3 N4 , quartz, and coesite (a high-pressure form of SiO2 ). The formation of Si2 ON2 from oxidized amorphous Si3 N4 seemed to be assisted by formation of a Si–O–N melt in the system that was enhanced under the high pressure. 相似文献
10.
Tzer-Shin Sheu 《Journal of the American Ceramic Society》1994,77(9):2345-2353
The in situ β-Si3 N4 /α'-SiAlON composite was studied along the Si3 N4 –Y2 O3 : 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si3 N4 /α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si3 N4 during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si3 N4 fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m1/2 . α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions. 相似文献
11.
Branko Matovic Georg Rixecker Fritz Aldinger 《Journal of the American Ceramic Society》2004,87(4):546-549
This paper deals with the densification and phase transformation during pressureless sintering of Si3 N4 with LiYO2 as the sintering additive. The dilatometric shrinkage data show that the first Li2 O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si3 N4 to β-Si3 N4 taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si3 N4 to β-Si3 N4 takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li2 O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li2 O−Y2 O3 system can provide very effective low-temperature sintering additives for silicon nitride. 相似文献
12.
Mikito Kitayama Kiyoshi Hirao Akira Tsuge Koji Watari Motohiro Toriyama Shuzo Kanzaki 《Journal of the American Ceramic Society》2000,83(8):1985-1992
Dense β-Si3 N4 with various Y2 O3 /SiO2 additive ratios were fabricated by hot pressing and subsequent annealing. The thermal conductivity of the sintered bodies increased as the Y2 O3 /SiO2 ratio increased. The oxygen contents in the β-Si3 N4 crystal lattice of these samples were determined using hot-gas extraction and electron spin resonance techniques. A good correlation between the lattice oxygen content and the thermal resistivity was observed. The relationship between the microstructure, grain-boundary phase, lattice oxygen content, and thermal conductivity of β-Si3 N4 that was sintered at various Y2 O3 /SiO2 additive ratios has been clarified. 相似文献
13.
Gui-hua Peng Min Liang Zhen-hua Liang Qing-yu Li Wen-lan Li Qian Liu 《Journal of the American Ceramic Society》2009,92(9):2122-2124
Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si3 N4 powders as raw materials and MgSiN2 as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si3 N4 phase left in the sintered material. α-Si3 N4 was completely transformed to β-Si3 N4 after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)−1 was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si3 N4 ceramics with high thermal conductivity when appropriate additives are used. 相似文献
14.
The subsolidus phase diagram of the quasiternary system Si3 N4 -AlN-Y2 O3 was established. In this system α-Si3 N4 forms a solid solution with 0.1Y2 O3 : 0.9 AIN. The solubility limits are represented by Y0.33 Si10.5 Al1.5 O0.5 N15.5 and Y0.67 Si9 A13 ON15 . At 1700°C an equilibrium exists between β-Si3 N4 and this solid solution. 相似文献
15.
Youren Xu Chao M. Huang Waltraud M. Kriven Avigdor Zangvil 《Journal of the American Ceramic Society》1994,77(8):2213-2216
The microstructure of a pressureless sintered (1605°C, 90 min) O'+β' SiAlON ceramic with CeO2 doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20–30 μm long), and a continuous matrix of small rodlike β' grains (< 1.0 μm in length). Many α-Si3 N4 inclusions (0.1–0.5 μm in size) were found in the large O' grains. CeO2 -doping and its high doping level as well as the high Al2 O3 concentration were thought to be the main reasons for accelerating the reaction between the α-Si3 N4 and the Si-Al-O-N liquid to precipitate O'–SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant α–Si3 N4 from the reacting liquid, resulting in a delay in the α→β-Si3 N4 transformation. The large O' grains and the α-Si3 N4 inclusions have a pronounced effect on the strength degradation of O'+β' ceramics. 相似文献
16.
Naoto Hirosaki Yoshinobu Yamamoto Toshiyuki Nishimura Mamoru Mitomo Junichi Takahashi Hisanori Yamane Masahiko Shimada 《Journal of the American Ceramic Society》2002,85(11):2861-2863
Phase relationships in the Si3 N4 –SiO2 –Lu2 O3 system were investigated at 1850°C in 1 MPa N2 . Only J-phase, Lu4 Si2 O7 N2 (monoclinic, space group P 21 / c , a = 0.74235(8) nm, b = 1.02649(10) nm, c = 1.06595(12) nm, and β= 109.793(6)°) exists as a lutetium silicon oxynitride phase in the Si3 N4 –SiO2 –Lu2 O3 system. The Si3 N4 /Lu2 O3 ratio is 1, corresponding to the M-phase composition, resulted in a mixture of Lu–J-phase, β-Si3 N4 , and a new phase of Lu3 Si5 ON9 , having orthorhombic symmetry, space group Pbcm (No. 57), with a = 0.49361(5) nm, b = 1.60622(16) nm, and c = 1.05143(11) nm. The new phase is best represented in the new Si3 N4 –LuN–Lu2 O3 system. The phase diagram suggests that Lu4 Si2 O7 N2 is an excellent grain-boundary phase of silicon nitride ceramics for high-temperature applications. 相似文献
17.
Novel Two-Step Sintering Process to Obtain a Bimodal Microstructure in Silicon Nitride 总被引:5,自引:0,他引:5
Hai-Doo Kim Byung-Dong Han Dong-Soo Park Byong-Taek Lee Paul F. Becher 《Journal of the American Ceramic Society》2002,85(1):245-252
A two-step sintering process is described in which the first step suppresses densification while allowing the α-to-β phase transformation to proceed, and the second step, at higher temperatures, promotes densification and grain growth. This process allows one to obtain a bimodal microstructure in Si3 N4 without using β-Si3 N4 seed crystals. A carbothermal reduction process was used in the first step to modify the densification and transformation rates of the compacts consisting of Si3 N4 , Y2 O3 , Al2 O3 , and a carbon mixture. The carbothermal reduction process reduces the oxygen:nitrogen ratio of the Y-Si-Al-O-N glass that forms, which leads to the precipitation of crystalline oxynitride phases, in particular, the apatite phase. Precipitation of the apatite phase reduces the amount of liquid phase and retards the densification process up to 1750°C; however, the α-to-β phase transformation is not hindered. This results in the distribution of large β-nuclei in a porous fine-grained β-Si3 N4 matrix. Above 1750°C, liquid formed by the melting of apatite resulted in a rapid increase in densification rates, and the larger β-nuclei also grew rapidly, which promoted the development of a bimodal microstructure. 相似文献
18.
Processing and Thermal Conductivity of Sintered Reaction-Bonded Silicon Nitride: (II) Effects of Magnesium Compound and Yttria Additives 总被引:1,自引:0,他引:1
Xinwen Zhu You Zhou Kiyoshi Hirao Zoltán Lené 《Journal of the American Ceramic Society》2007,90(6):1684-1692
The effects of the magnesium compound and yttria additives on the processing, microstructure, and thermal conductivity of sintered reaction-bonded silicon (Si) nitride (SRBSN) were investigated using two additive compositions of Y2 O3 –MgO and Y2 O3 –MgSiN2 , and a high-purity coarse Si powder as the starting powder. The replacement of MgO by MgSiN2 leads to the different characteristics in RBSN after complete nitridation at 1400°C for 8 h, such as a higher β-Si3 N4 content but finer β-Si3 N4 grains with a rod-like shape, different crystalline secondary phases, lower nitrided density, and coarser porous structure. The densification, α→β phase transformation, crystalline secondary phase, and microstructure during the post-sintering were investigated in detail. For both cases, the similar microstructure observed suggests that the β-Si3 N4 nuclei in RBSN may play a dominant role in the microstructural evolution of SRBSN rather than the intergranular glassy chemistry during post-sintering. It is found that the SRBSN materials exhibit an increase in the thermal conductivity from ∼110 to ∼133 (Wm·K)−1 for both cases with the increased time from 6 to 24 h at 1900°C, but there is almost no difference in the thermal conductivity between them, which can be explained by the similar microstructure. The present investigation reveals that as second additives, the MgO is as effective as the MgSiN2 for enhancing the thermal conductivity of SRBSN. 相似文献
19.
Dense, single-phase β-sialon ceramics were sintered at 1700°C and 200 MPa using the glass-encapsulated hot isostatic pressing technique. The materials were very hard, 1500 to 1700 kg / mm2 (98 N load), but were fairly brittle, with an indention fracture toughness of about 3 MPa · m1/2 . The addition of 1 wt% Y2 O3 before sintering had a positive effect on the toughness, especially at the low x compositions of Si3-x Alx Ox N4-x , where KIC ∼4 MPa · m1/2 . 相似文献
20.
Crystallizing the grain-boundary glass of a liquid-phase-sintered Si3 N4 ceramic for 2 h or less at 1500° led to formation of δ-Y2 Si2 O7 . After 5 h at 1500°, the δ-Y2 Si2 O7 had transformed to β-Y2 Si2 O7 with a concurrent dramatic increase in dislocation density within β-Si3 N4 grains. Reasons for the increased dislocation density are discussed. Annealing for 20 h at 1500° reduced dislocation densities to the levels found in as-sintered material. 相似文献