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QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR—Ⅱ ELECTRICAL ASPECTS 总被引:1,自引:2,他引:1
IntroductdonInthefirstpart ,wehavediscussedtheopiticalaspectsaboutthequantumwellinfraredphotodetec tor .Herewecontinuediscussionsabouttheelectricalaspectesofthedevicemodelandsimulation .1 DarkCurrentandPhotocurrentDistributedeffectsofexternalbiasacrossth… 相似文献
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MODIFICATION OF ABSORPTION SPECTRUM OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR BY POSTGROWTH ADJUSTMENT 下载免费PDF全文
IntroductionSince 1980s,the infrared detector based on inter-subband transitions in quantum well(QW)systems,called the quantum well infrared photoconductor(QWIP),has been studied and developed extensivelyand successfully[1].Quantumwell intermixing(QWI)tec… 相似文献
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报道了128×128 AlGaAs/GaAs量子阱红外焦平面探测器阵列的设计和制作.采用金属有机化学气相淀积外延技术生长外延材料,并在GaAs集成电路工艺线上完成工艺制作.为得到器件参数,设计制作了台面尺寸为300μm×300μm的大面积测试器件;77K下2V偏压时暗电流密度为1.5×10-3A/cm2;80K工作温度下,器件峰值响应波长为8.4μm,截止波长为9μm,黑体探测率DB 为3.95×108(cm·Hz1/2)/W.将128×128元 AlGaAs/GaAs量子阱红外焦平面探测器阵列芯片与相关CMOS读出电路芯片倒装焊互连,在80K工作温度下实现了室温环境目标的红外热成像,盲元率小于1%. 相似文献