一种用于ZigbeeTM接收机的低功耗Gm-C复数滤波器

采用0.18μm CMOS工艺,设计了用于低中频Zigbee接收机的可自动频率调谐的Gm-C复数滤波器.通过跨导放大器(Gm)按比例设计,解决了核心滤波器与PLL调谐电路的匹配问题,达到好的调谐效果.仿真结果显示:滤波器中心频率为2MHz,带宽2MHz,镜像抑制比大干55dB,群延时小于0.9μs,电流功耗仅为1.5mA.     

一种Gm-C复数滤波器频率调谐电路

采用TSMC 0.25μm CMOS工艺,设计了一个Gm-C复数滤波器的频率调谐电路。基于PLL锁相技术,利用工作于深线性区的NMOS管和MiM电容组成的环形振荡器检测频率参数偏差,并自动调谐到希望值。仿真和测试结果表明,该电路能将频率偏差降低到3%以下。     

一种基于开关电容调谐的宽带压控振荡器设计

设计了一种频率可调范围约600 MHz的全集成CMOS LC宽带压控振荡器.该压控振荡器工作电压为3.3 V,基于Chartered 0.25 μm 标准CMOS工艺设计,利用开关电容调谐的方法扩大其调谐范围.测试结果表明:该压控振荡器工作在中心频率为1.9 GHz时,单边带相位噪声为-85 dBc/10 kHz,调谐范围达到32%.     

显示控制CMOS锁相环频率合成器设计

从工程的角度出发,设计了一个应用于显示控制芯片的新颖实用的CMOS锁相环频率合成器.详细论述了系统设计的关键问题,研究了电荷泵充放电电流匹配、精度和输出电压等工程设计问题,并对环路滤波器的计算和仿真以及压控振荡器的噪声性能进行了研究.采用1st Si 0.25μm的CMOS混合信号工艺对整个电路系统进行了带版图寄生的后仿真,仿真结果表明锁相环频率合成器设计的正确性.     

一种应用于D类音频放大器的CMOS振荡器的设计

文中介绍了一种应用于低D类音频功放的CMOS振荡器结构设计,用于对音频信号的调制。振荡器采用内部正反馈的迟滞比较器设计,大大降低了电源电压和环境温度对CMOS振荡器振荡频率的影响。理论分析及仿真结果表明,此CMOS振荡器具有较高的频率稳定性。     

GPS接收机镜像信号抑制

分析了GPS接收机镜像信号抑制的要求,设计应用于低中频GPS接收机的镜像抑制复数滤波器.滤波器基于OTA-C双二次结构,通过线性变换实现频率搬移.采用了带源极负反馈的全差分跨导器以扩大输入线性范围.设计了基于环形振荡器的数字调谐锁相环以减小滤波器频率偏差.电路采用0.18μm CMOS工艺实现.测试结果表明,滤波器带宽为3.1MHz,偏移5MHz抑制为50dB,频率修调误差小于±1.5%.镜像抑制大于35dB.1.8V电源电压下滤波器和修正电路电流分别为0.82mA和0.23mA.     

一种面向多标准无线收发器的低功耗宽调谐范围基带滤波器设计

本论文提出了一种面向多标准收发器的具有精确片上调谐电路的低功耗宽调谐范围基带滤波器。设计的滤波器是由三级Active-Gm-RC类型的双二次单元级联组成的六阶巴特沃斯低通滤波器。采用改进的线性化技术来提高低通滤波器的线性度。论文提出了一种新的匹配性能与工艺无关的跨导匹配电路和具有频率补偿的频率调谐电路来增加滤波器的频率响应精度。为了验证设计方法的有效性,采用标准的130nm CMOS工艺对滤波器电路进行流片。测试结果表明设计的低通滤波器带宽调谐范围为0.1MHz-25MHz,频率调谐误差小于2.68%。滤波器在1.2V的电源电压下,功耗为0.52mA到5.25mA,同时取得26.3dBm的带内输入三阶交调点。     

一种低噪声C类LC压控振荡器的设计

为了改善压控振荡器相位噪声,基于40 nm CMOS工艺,设计一种低噪声C类LC压控振荡器。交叉耦合NMOS对管通过电流镜偏置作为电路的电流源,并采用共模反馈偏置电路使交叉耦合PMOS对管工作在饱和区,保证LC压控振荡器实现C类振荡。通过差分可变电容的设计,压控振荡器的增益减小,压控振荡器的相位噪声得到改善。设计了4组开关电容进行调节,增大压控振荡器的调谐范围。仿真结果表明,处于1.2 V的电压下,压控振荡器振荡频率范围在4.14～5.7 GHz,频率调谐范围变化率达到31.2%,相位噪声为-112.8 dBc/Hz。     

90nm CMOS全数字锁相环设计与实现

设计了一种基于90 nm CMOS工艺的全数字锁相环,重点介绍了几种子模块电路结构,包括鉴频鉴相器、时间数字转换器、数字控制振荡器和新型2阶数字滤波器,分别对其性能进行了分析.仿真测试结果表明,该锁相环具有输出频率高、锁定时间短、抖动小等特点.     

一种超高频高Q值CMOS带通滤波器设计

介绍了一种基于Nauta跨导一电容积分器的CMOS集成滤波器设计。在滤波器设计过程中,利用改进的Nauta导具有可调增益、高线性度、宽频域特点,使滤波器可工作在UHF频段并有高品质因数Q,仿真结果表明,所设计的滤波器采用Cllarted Semiconductor Manuhcturing（CSM）0．35um CMOS工艺,工作电压为3V,Q值可达到40-100,当中心频率为433MHz,Q值为40时,无杂散动态范围（SFDR）约为61．4dB,并可通过调节电路偏压达到对中心频率ωc和Q的调谐。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks