Multifunction MMIC history from a process technology perspective

The different types of multifunction microwave monolithic integrated circuits (MMICs) that have been developed to date are reviewed, and projections for the future direction of the technology are made. Various innovative circuit design techniques have allowed a wide range of functions to be performed using the same processes as single-function MMICs. These circuits are almost exclusively based on GaAs Schottky-barrier-gate ion-implanted MESFETs, MIM capacitors, inductors, and (sometimes) through-substrate vias on GaAs substrates. Chips performing all the microwave functions of radar transmit/receive modules, receivers, and frequency synthesizers have been developed. Process complexity is a dominant factor determining their practicality and cost, and the most successful circuits have been designed with process limitations in mind. In the future, proliferation of multifunction MMICs with even greater functional complexity is expected, but additional process complexities will be added sparingly     

Three-dimensional MMIC technology for low-cost millimeter-waveMMICs

This paper highlights the key advantages of the three-dimensional (3-D) MMIC technology in the millimeter-wave frequency band and describes recently developed compact 3-D MMICs on GaAs and Si substrates. The 3-D MMIC technology offers high integration levels, compactness, simple design procedures, and short fabrication turn-around time, resulting in millimeter-wave MMICs at greatly reduced cost. This paper also proposes a new methodology for MMIC development based on 3-D/multilayer MMIC technology that accelerates the cost reduction of millimeter-wave MMICs. The new technology achieves compact and highly integrated millimeter-wave MMICs that are extremely cost effective     

Technology, circuit design and applications of GaAs MMICs

Gallium arsenide monolithic microwave integrated circuits (GaAs MMICs) are a means of utilising the high-mobility, high-frequency aspects of the GaAs MESFET together with the semi-insulating properties of gallium arsenide to form a low-loss integrated circuit with active elements. Novel semiconductor growth structures allow devices with cut-off frequencies well into the millimetre wave ranges to be fabricated, with dramatic improvements in gain and noise figure. Multilevel structures also permit very high circuit densities, so complete receivers and phased-array radar multifunction circuits can be made with high repeatability in a few square millimetres. The authors discuss various aspects of the production process including process control and reliability. The materials used for GaAs MMICs and the fabrication technology used are discussed as are their applications. Future MMIC technology developments are also discussed     

Thermal modeling of power gallium arsenide microwave integratedcircuits

Manufacturers are developing power devices for ever higher frequencies using GaAs MESFETs and heterojunction bipolar devices constructed with III-V compounds on GaAs substrates, as well as integrated power devices on monolithic microwave integrated circuits (MMICs). A problem with the technology is the low thermal conductivity of gallium arsenide, giving rise to thermal design problems that must be solved if good reliability is to be achieved. A three-dimensional numerical simulator is used to study this problem. In particular, the approximations which are possible in performing realistic assessments of the thermal resistance of typical GaAs power device structures under steady-state conditions are examined     

Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, <Emphasis Type="Italic">V</Emphasis>, and <Emphasis Type="Italic">W</Emphasis> bands

A technology for fabricating multifunction monolithic microwave integrated circuits (MMICs) based on gallium nitride (GaN) heterostructures, which operate at the frequency range up to 100 GHz (the Ka, V, and W bands), is developed. Power amplifier (PA) MMICs operating at 90 GHz are fabricated using the coplanar technology with the gain coefficient being up to 15 dB and the specific output power exceeding 500 mW/mm. In addition, microstrip technology with the use of the polymer dielectric and grounding metallization over the wafer surface without through holes in the substrate is approved. The parameters of the MMICs for multifunction single-chip transmit-receive modules (TRMs), as well as the parameters of the MMICs for intermediate-frequency amplifiers (IFAs), voltage-controlled oscillators (VCOs), low noise amplifiers (LNAs), PAs, and balanced mixers operating in the Ka and V bands (up to 70 GHz), which are fabricated using the proposed technology, are presented.     

A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs

In this paper, a new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs (Monolithic microwave integrated circuit) is proposed. Based on the meshing criterion, an equivalent thermal model of GaAs PHEMTs with remarkably reduced mesh complexity is established, and the simplification of both layout pattern and vias of MMICs are performed. Theoretical analysis is applied for the calibration of the equivalent thermal model. Assisted by the meshing criterion, chip-level simulators are capable to obtain the peak temperature of MMICs without using averaging approximations, and achieve considerably high simulation accuracy. As examples, two MMIC power amplifiers are designed and implemented using GaAs PHEMT process. Thermal simulation and measurement results obtained with ANSYS ICEPAK and infrared thermography, respectively, show high consistency. The proposed meshing criterion can be applied to improve the accuracy of thermal analysis of MMICs, and the obtained precise peak temperature can be used to effectively assess the power threshold of the designed amplifiers in reliability tests.     

Very broadband distributed amplifier to 75 GHz

Distributed amplifiers were fabricated successfully with a gain of 8 dB+or-1 dB in the frequency range 5-75 GHz measured on-wafer. The associated input and output matching is better than -10 dB. To the authors' knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.<>     

Design and performance of low-current GaAs MMICs forL-band front-end applications

GaAs monolithic microwave integrated circuits (MMICs) with very low current and of very small size have been developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB small local oscillator (LO) power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltages     

Mobile broadband system (MBS): trends and impact on 60 GHz bandMMIC development

The RACE mobile broadband system (MBS) project aims to extend the broadband integrated services digital network (B-ISDN) to mobile users. To meet the future demand for broadband wireless picocell networks, frequencies have been allocated in the 62-63 and 65-66 GHz bands. However, for the use of a mobile broadband system to become widespread it is necessary to develop relatively low cost transceivers based on millimetre wave GaAs P-HEMT MMICs. A transceiver architecture and elementary building blocks have been defined. 60 GHz transistor models have been refined and circuit design, layout and simulation achieved. Future cost decrease is a function of the MMIC manufacturing yield, since a high yield allows a higher layout density and consequently fewer MMICs per transceiver, and of the improvement in packaging techniques above 60 GHz     

GaAs MMICs offer space and cost reductions for handheld telephones

The use of GaAs monolithic microwave integrated circuits (MMICs) for the power amplifier in portable telephones is a quantum leap in terms of technology and it affords major benefits in return especially for handheld applications. Mitsubishi has led the way in the use of MMICs and of the four current suppliers of handheld analogue telephones to the NTT telecom body in Japan, Mitsubishi is the only company using GaAs MMICs for the power amplifier in its telephones, of which it is currently producing 20 000 to 30 000 per month.     

Analysis and Design of a Novel $times$4 Subharmonically Pumped Resistive HEMT Mixer

In this paper, a novel topology of an HEMT-based subharmonically pumped resistive mixer (SHPRM) is presented, i.e., the times4SHPRM. The presented topology requires only a quarter of the local oscillator (LO) frequency compared to a fundamentally pumped mixer (e.g., 15 instead of 60 GHz in a 60-GHz system). This reduction in required LO frequency provides a significant reduction in complexity of the overall radio front-end and reduces the dc power consumption as well as the occupied chip area. Thus, the times4SHPRM provides a significant cost reduction for a millimeter-wave system. Furthermore, the times4SHPRM can be used for both up- and down-conversion and it can be implemented in any field-effect transistor technology. The principle of the times4SHPRM is presented and wave analysis is applied in order to investigate the fundamental limitations of this mixer topology. For an evaluation of the times4SHPRM topology, three different monolithic microwave integrated circuits (MMICs) were designed and manufactured in the same MMIC metamorphic HEMT technology. Besides measured performance of the times4SHPRM, a traditional times2SHPRM and a single-ended resistive mixer were implemented and their performances are presented and compared. All of these MMICs operate with a 60-GHz RF frequency and employ LO signals close to 15, 30, and 60 GHz, respectively.     

An algorithm for calculating the coupling between MMICs with blockdielectric coverings

In this paper, a computer-aided design (CAD) algorithm is presented for determining the coupling between sealant covered monolithic microwave integrated circuits (MMICs) in a multichip module. It is assumed that the MMICs are sufficiently separated that near-field coupling can be neglected and that TM₀ parallel-plate fields dominate. It is also assumed that the MMICs are each covered by a sealant of size commensurate with the MMIC. The technique presented is computationally simple, appropriate for use with layout-based circuit CAD software, and uses no numerical electromagnetics. It has been tested by comparison to full-wave electromagnetic simulation. In simple test cases, this technique showed over two orders of magnitude increase in speed. For larger problems, the increase in speed will be more pronounced     

Application of GaAs Discrete p‐HEMTs in Low Cost Phase Shifters and QPSK Modulators

The application of a discrete pseudomorphic high electron mobility transistor (p‐HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p‐i‐n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p‐HEMT characterization and modeling in switching mode as well as the development of a low‐cost four‐bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.     

Multifunction SAG process for high-yield, low-cost GaAs microwaveintegrated circuits

A new fully planar, multifunction refractory self-aligned gate (MSAG) technology suitable for the fabrication of GaAs small-signal and power microwave monolithic integrated circuits (MMICs) is demonstrated in a manufacturing environment. Data on the distribution of DC and RF performance and yield for pilot production of discrete FETs and MMICs are presented. The heart of the MSAG process is a planar, self-aligned gate FET. It uses a refractory TiWN Schottky gate and exhibits high performance for small-signal microwave, power microwave, and digital circuit applications. Lots with good wafer yields have demonstrated average chip yields on PCM good wafers of 45%, 49%, and 36% for 2-10-GHz distributed amplifiers, 1-W C-band power amplifiers, and 4-W power amplifiers, respectively     

220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications

In this paper, the development of 220-GHz low-noise amplifier (LNA) MMICs for use in high-resolution active and passive millimeter-wave imaging systems is presented. The amplifier circuits have been realized using a well-proven 0.1-/spl mu/m gate length and an advanced 0.05-/spl mu/m gate length InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor technology. Furthermore, coplanar circuit topology in combination with cascode transistors was applied, leading to a compact chip size and an excellent gain performance at high millimeter-wave frequencies. A realized single-stage 0.05-/spl mu/m cascode LNA exhibited a small-signal gain of 10 dB at 222 GHz, while a 0.1-/spl mu/m four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz.     

Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.     

Broadband microstrip patch antennas for MMICs

A broadband microstrip patch antenna well suited for monolithic microwave integrated circuits (MMICs) is presented. The antenna exhibits a measured bandwidth of 35%, low surface wave loss, a high front-to-back ratio, and is fabricated directly on the MMIC substrate material. The predicted and measured input impedances are given along with the measured radiation performance     

A nonlinear microwave model of a low-barrier diode based on semiconductor junctions

A refined nonlinear model of a low-barrier diode based on semiconductor junctions, which is constructed in a modified equivalent electric circuit, is proposed. The model takes into account the design features of diodes of this type, as compared with a well-known model, and can be recommended for use in designing frequency converting monolithic microwave integrated circuits (MMICs) in a frequency range of up to 110 GHz.     

Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred,third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2/spl times/ local oscillator leakage and excellent gain control. To the best of the authors' knowledge,this is the highest level of integration achieved for up- and down-converters at these frequencies.     

60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers

The development of V-band low-noise monolithic microwave integrated circuits (MMICs) based on pseudomorphic modulation-doped FETs (P-MODFETs) is presented. These dual-stage MMICs incorporate P-MODFETs, with 0.35-μm×60-μm gates, as the active elements, electron-beam-written tuning elements, and DC-blocking and bias networks. The dual-stage chips exhibited a maximum gain of 10.2 dB at 59.5 GHz and a minimum noise figure of 5.3 dB, with an associated gain of 8.2 dB at 58.2 GHz. A cascaded four-stage amplifier using two MMIC modules exhibited 5.8-dB minimum noise figure with an associated gain of 18.3 dB at 58 GHz and up to 21.1 dB of maximum gain