E‐field Control of the RKKY Interaction in FeCoB/Ru/FeCoB/PMN‐PT (011) Multiferroic Heterostructures

E‐field control of antiferromagnetic (AFM) orders is promising for the realization of fast, compact, and energy‐efficient AFM applications. However, as the AFM spins are strongly pinned, the E‐field control process is mainly based on the exchange bias regulation that usually confines at a low temperature. Here, a new magnetoelectric (ME) coupling mechanism for the modulation of AFM orders at room temperature is explored. Based on the FeCoB/Ru/FeCoB/(011) Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ (PMN‐PT) synthetic antiferromagnetic (SAF) heterostructures, the external E‐field generates relative magnetization switching in the two ferromagnetic (FM) layers, leading the Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction tuning. This voltage‐induced switching behavior can be repeated in a stable and reversible manner for various SAFs, which is a key challenge in the E‐field control of AFM coupling and is not resolved yet. The voltage‐induced RKKY interaction changes by analyzing the dynamic optical and acoustic modes is quantified, and with first‐principles calculations, it is found that the distortion of the Fermi surface by the lattice reconstruction is the key of the relative magnetization switching and RKKY interaction modulation. This voltage control of the RKKY interaction in ME heterostructures provides an easy way to achieve the next generation of AFM/FM spintronic applications.     

Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures

Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii–Moriya interaction (DMI). Here, magnetic topological states in a 40-unit cells (16 nm) SrRuO₃ layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO₃/BiFeO₃ heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.     

Study of Electronic,Mechanical, Magnetic,and Optical Properties of Mg<Subscript>0.75</Subscript>TM<Subscript>0.25</Subscript>S/Se (TM = Fe,Co, Ni): A First Principle Approach

A systematic study of the magnetism, mechanical, and optical behaviors of Mg_0.75TM_0.25S/Se (TM = Fe, Co, Ni) ordered alloys was conducted using the full-potential linearized augmented plane wave plus local orbital method. The ferromagnetic (FM) and antiferromagnetic (AFM) ground state energy differences and enthalpy of formation scrutinized their dynamical stability in the FM state. The elastic parameters decided their mechanical stability, ductile behavior, and partial ionic and covalent characters. Moreover, the calculated band structures and density of states revealed the type and origin of magnetism in terms of exchange splitting energies and exchange constants. The Fe- and Ni-doped MgS/Se alloys exhibited half metallic ferromagnetic (HMF) characteristics, while the Co-doped MgS/Se alloy depicted ferromagnetic semiconducting characters. A reduction in the magnetic moments of the transition metals was observed compared with their free space value, which is due to strong p-d hybridization. Furthermore, the optical spectrum showed the maximum light absorbed in the visible and in the UV region of the electromagnetic spectrum, which makes them potential candidates for optoelectronic and spintronic device applications.     

Ionic Gel Modulation of RKKY Interactions in Synthetic Anti‐Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices

To meet the demand of developing compatible and energy‐efficient flexible spintronics, voltage manipulation of magnetism on soft substrates is in demand. Here, a voltage tunable flexible field‐effect transistor structure by ionic gel (IG) gating in perpendicular synthetic anti‐ferromagnetic nanostructure is demonstrated. As a result, the interlayer Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction can be tuned electrically at room temperature. With a circuit gating voltage, anti‐ferromagnetic (AFM) ordering is enhanced or converted into an AFM–ferromagnetic (FM) intermediate state, accompanying with the dynamic domain switching. This IG gating process can be repeated stably at different curvatures, confirming an excellent mechanical property. The IG‐induced modification of interlayer exchange coupling is related to the change of Fermi level aroused by the disturbance of itinerant electrons. The voltage modulation of RKKY interaction with excellent flexibility proposes an application potential for wearable spintronic devices with energy efficiency and ultralow operation voltage.     

Electric-field-assisted switching in magnetic tunnel junctions

The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 10(6)-10(7) A cm(-2). It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.     

Observation of Exchange Interaction in Iron(II) Spin Crossover Molecules in Contact with Passivated Ferromagnetic Surface of Co/Au(111)

Spin crossover (SCO) complexes sensitively react on changes of the environment by a change in the spin of the central metallic ion making them ideal candidates for molecular spintronics. In particular, the composite of SCO complexes and ferromagnetic (FM) surfaces would allow spin-state switching of the molecules in combination with the magnetic exchange interaction to the magnetic substrate. Unfortunately, when depositing SCO complexes on ferromagnetic surfaces, spin-state switching is blocked by the relatively strong interaction between the adsorbed molecules and the surface. Here, the Fe(II) SCO complex [Fe^II(Pyrz)₂] (Pyrz = 3,5-dimethylpyrazolylborate) with sub-monolayer thickness in contact with a passivated FM film of Co on Au(111) is studied. In this case, the molecules preserve thermal spin crossover and at the same time the high-spin species show a sizable exchange interaction of > 0.9 T with the FM Co substrate. These observations provide a feasible design strategy in fabricating SCO-FM hybrid devices.     

Magnetic characterization of MnPt/CoFe bilayers using the MOKE technique

The performance of magnetoresistive devices (spin valves, tunnel junctions), made of two ferromagnetic (FM) layers and separated by a non-magnetic spacer, rely on the existence of two well separated resistance states. For this to occur, one of the FM layer is deposited just adjacent to an antiferromagnetic (AFM) layer. Due to the exchange interaction at the AFM/FM interface, the reversal of the magnetization (M) of such FM-pinned layer occurs at a high applied magnetic field. The magnetization of the other FM layer reverses almost freely when a small magnetic field is applied. Here we study the exchange bias effect in the MnPt (t)/CoFe (50 Å) system, using the Magneto-Optical Kerr Effect (MOKE) and domain imaging techniques. The exchange (H_E) and coercive (H_c) fields increase with increasing AFM thickness, saturating for t > 200 Å (H_E ≈ 670 Oe and H_c ≈ 315 Oe). Furthermore, we observe that the value of the exchange field is almost independent of the applied magnetic field sweeping rate (up to ≈ 300 kOe/s). Domain imaging allowed us to conclude that magnetization reversal in the studied system proceeds essentially by coherent magnetic moment rotation.     

First-Principles Investigation of Electronic Structure Features of TbOFeAs Compound

We report a theoretical investigation on the electronic and magnetic properties of rare-earth pnictide parent compound, such as TbOFeAs. Employing first-principles method supplemented by the local spin density approximation (LSDA), we discuss the electronic structure with the incorporation of the role of Coulomb on-site repulsion (U) of Tb 4f states as well as the spin-orbit (SO) coupling on the magnetic and nonmagnetic phases. For ferromagnetic (FM) and antiferromagnetic (AFM) phases, we have determined the spin and orbital magnetic moments of Tb ions and confer the significance of the spin-orbit interaction of Tb 4f states in this parent compound. In the FM state, the reduction of Fe moment is about a factor of 3.5 with respect to AFM configuration. The most energetically favorable state is AFM configuration. Our theoretical findings surmise that the magnetic moments on Fe sites carry an AFM order. Based on LSDA + U + SO approximation, we infer that the Tb magnetic moments also carry an AFM order, albeit the spin Tb sites in TbO layer possess the same orientation as the Fe spins in FeAs layer. With the incorporation of on-site Coulomb repulsion and spin-orbit interaction in AFM state, the Fe 3d states are large near the Fermi level and this phase is illustrating a metallic behavior. Moreover, the Fermi surface topology and nesting features are presented.     

Tunable Magnetic Interaction of Co-Doped SiC Monolayer Under Electric Field: Ab Initio Study

The magnetic properties of Co-doped silicon carbide monolayer under an external electric field are investigated using a first-principles method. In the absence of the electric field, magnetism is observed for both Si (Co_Si) and C (Co_C) sites. Then, the interaction between two Co atoms has been studied in the Co_Si system. Both antiferromagnetic (AFM) and ferromagnetic (FM) states have been found. The results show that the FM behavior is originated by the p–d hybridization between Co and its neighboring C atoms. When an electric field was introduced along the c-axis, the interaction between two Co dopants switched from FM to AFM, which could be dominated by the competition between p–d exchange and superexchange. Moreover, the magnetic anisotropy (MA) prefers to parallel to the a-axis and seems not to be turned into the c-axis under the electric field.     

Ab Initio and Monte Carlo Approaches for the Magnetocaloric Effect in BaMnO<Subscript>3</Subscript> Oxide Perovskite

The self-consistent ab initio calculations, based on density functional theory approach (DFT) and using full potential linearised augmented plane wave (FLAPW) method, have been used to investigate both electronic and magnetic properties of the BaMnO₃ perovskite. Spin-polarised calculations, including the spin-orbit interaction, are used to determine the energy of the ferromagnetic (FM) and antiferromagnetic (AFM) states of BaMnO₃ perovskite. Obtained data from ab initio calculations are used as input for the Monte Carlo simulations to compute other magnetic parameters. Magnetisation, specific heat and magnetic entropy change have been given using the Monte Carlo simulations. The adiabatic temperature change, transition temperature and relative cooling power have been established.     

铁磁/反铁磁双层膜中的磁化性质与界面微结构

采用Monte Carlo模拟方法,通过反铁磁层中非磁性掺杂方式调节铁磁层与反铁磁层界面微结构,讨论了其界面微结构对体系的磁滞回线的不对称性、交换偏置场及矫顽场的影响.模拟结果显示:在同一掺杂浓度下,体系的磁滞回线的不对称性及交换偏置场强烈地依赖于掺杂方式,但矫顽场几乎不受影响,其相应的温度特性亦依赖于掺杂方式.它表明铁磁/反铁磁双层膜体系中的磁滞回线的不对称性以及交换偏置场与其界面微结构密切相关,同时实验上人们可通过界面微结构的改变获得交换偏置场大、矫顽场小且热稳定性好的自旋阀结构.     

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr₂O₃. The exchange coupling between the two materials is investigated using field-cooling-dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr₂O₃ and the magnetic topological insulator, manifested as an exchange bias when the sample is field-cooled under an out-of-plane magnetic field, and an exchange spring-like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films.     

Magnetic properties of Ni-NiO (ferromagnetic-antiferromagnetic) nanocomposites obtained from a partial mechanochemical reduction of NiO

The magnetic properties of ferromagnetic (FM)-antiferromagnetic (AFM), Ni-NiO, nanocomposites obtained from a reactive ball milling reduction of NiO in H2 atmosphere have been studied. The formation of ferromagnetic Ni from antiferromagnetic NiO can be accurately followed by the increase of the saturation magnetization. The microstructure of the nanocomposite, consisting of FM Ni nanoparticles embedded in an AFM NiO matrix leads to exchange bias effects, i.e., loop shifts and coercivity enhancement, after field cooling from above the Néel temperature of NiO.     

Cr掺杂半导体CdTe的半金属铁磁性研究

采用基于密度泛函理论(DFT)的平面波赝势(PWPP)方法和全势线性缀加平面波(FPLAPW)方法研究了Cr掺杂半导体CdTe的电子结构和磁性.通过对自旋极化的态密度、磁矩以及铁磁态和反铁磁态的总能量的分析,理论预测到Cr掺杂半导体CdTe是一个半金属铁磁体,其在半导体自旋电子学中应该有一定的应用.     

Ab Initio Study of Magnetism in III-V- and II-VI-Based Diluted Magnetic Semiconductors

Electronic structure and magnetic properties of Ga_1–x Mn _x As, Ga_1–x Mn _x N, Zn_1–x M _x O, and Zn_1–x M _x Te (M=V, Cr, Mn, Fe, and Co) diluted magnetic semiconductors (DMS) are calculated by the tight-binding LMTO method in the 64-atom supercell. Calculations are made at several x with varied spatial distribution of dopant atoms and codoping of DMSs. The results show that stability of the ferro- and antiferromagnetic (FM and AFM) states in DMSs strongly correlates with the occupation and energy position of 3d-dopant bands. Adequacy of the double exchange and superexchange mechanisms for explanation of the FM vs. AFM competition is discussed.     

Magnetic properties and first-order magnetic phase transition in single crystal FeRh thin film

To understand the mechanism of first-order magnetic phase transition in ordered FeRh thin films, the magnetic properties and first-order antiferromagnetic (AFM)–ferromagnetic (FM) phase transition behavior of single-crystal FeRh thin film are investigated in detail. The first-order magnetic phase transition is seen at a temperature of around 120 °C during heating and 145 °C cooling processes in perpendicular direction. The M–H loops measured isothermally amidst the AFM–FM transition regime show an opening at high magnetic field, which indicate a reversible AFM–FM transition induced by magnetic field. The clusters of the FM phase nucleate in the AFM matrix heterogeneously and vice versa during the first-order phase transition and the mechanism of nucleation and growth kinetics of the first-order magnetic phase transition in ordered FeRh thin film is quite similar to that of the crystallization of solids described by the Avrami model.     

Enhanced magnetic properties of cobalt nanoparticles on FeMn films

Monodisperse cobalt nanoparticles are synthesized by the thermal decomposition of Co₂(CO)₈ in phenyl ether and subsequently deposited on antiferromagnetic (AFM) FeMn films and glass substrates, respectively. Magnetic measurement shows that the as-prepared Co nanoparticles are superparamagnetic and can be transformed into ferromagnetic (FM) through thermal treatment. While keeping monodisperse, the annealed FM Co nanoparticles on AFM FeMn films show a much larger coercivity than the ones on glass substrates due to FM/AFM exchange coupling. Accordingly, we propose a convenient method to enhance magnetic properties of nanoparticles.     

Positive and negative exchange bias in IrMn/NiFe bilayers

We present the observation of double shifted hysteresis loops in IrMn/NiFe bilayer structures. The bilayer structures were fabricated using high vacuum DC magnetron sputtering system. The hysteresis loops of the as deposited samples show the double shifted loops at NiFe layer thicknesses 5 nm and 6 nm, whereas the IrMn layer thickness was kept constant at 15 nm. The results were interpreted as the contribution of both positive and negative exchange bias fields. We suppose that this phenomenon is occurring due to the ferromagnetic (FM) layer exchange coupled with the antiferromagnetic (AFM) layer in two different magnetization directions. The ferromagnetic coupling of the interface spins in some regions of the film generates the hysteresis loop shift toward negative fields and antiferromagnetic coupling toward positive fields in the other regions. The double shifted hysteresis loops disappeared after magnetic field annealing of the samples above Neel temperature of the AFM layer. The X-ray diffraction patterns of the sample show the IrMn (111) crystalline growth necessary for the development of exchange bias field in this system. The correlation between the Magnetic Force Microscopy (MFM) domain structures of the as deposited sample and the magnetization reversal process of the double shifted hysteresis loops were discussed. The results suggest that the larger multidomain formation in the AFM layer with different magnetization directions was responsible for the positive and negative exchange bias fields in IrMn/NiFe bilayer samples.     

Cu掺杂ZnO纳米粒子的光学性能及铁磁性

利用溶胶凝胶法制备了纳米结构的Cu掺杂ZnO基稀磁半导体,通过X射线衍射分析表明,样品为纯相ZnO纤锌矿结构,磁性测量表明样品在室温下呈室温铁磁性,铁磁性来源为氧化锌晶格中的缺陷与Cu2+离子之间的交换作用。室温光致发光(PL)谱观察到紫外带边和可见光区两个发射峰,且随着Cu掺杂量增加,紫外峰淬灭,可见峰发射增强。     

Intrinsic Van Der Waals Magnetic Materials from Bulk to the 2D Limit: New Frontiers of Spintronics

2D van der Waals (vdW) magnets, which present intrinsic ferromagnetic/antiferromagnetic ground states at finite temperatures down to atomic‐layer thicknesses, open a new horizon in materials science and enable the potential development of new spin‐related applications. The layered structure of vdW magnets facilitates their atomic‐layer cleavability and magnetic anisotropy, which counteracts spin fluctuations, thereby providing an ideal platform for theoretically and experimentally exploring magnetic phase transitions in the 2D limit. With reduced dimensions, the susceptibility of 2D magnets to a large variety of external stimuli also makes them more promising than their bulk counterpart in various device applications. Here, the current status of characterization and tuning of the magnetic properties of 2D vdW magnets, particularly the atomic‐layer thickness, is presented. Various state‐of‐the‐art optical and electrical techniques have been applied to reveal the magnetic states of 2D vdW magnets. Other emerging 2D vdW magnets and future perspectives on the stacking strategy are also given; it is believed that they will excite more intensive research and provide unprecedented opportunities in the field of spintronics.