表面涂层薄膜硬度检测技术

对涂层薄膜而言，硬度检测是定量分析其质量的一种手段，本文介绍了表面涂层薄膜硬度检测技术及所研制的检测系统的组成，阐述了该项技术的特点及其应用前景。     

Ni3Al薄膜涂层的制备与性能研究

利用ＰＬＤ法制备的淀积态的Ｎｉ－Ａｌ薄膜经１０７３Ｋ／３６００ｓ（Ａｒ气中）热处理后,可以获得以Ｎｉ３Ａｌ为基的Ｎｉ３Ａｌ／Ｎｉ复相薄膜涂层。这种复相涂层无论是强度（硬度）还是耐蚀性与未涂层的Ｎｉ相比,都有显著的提高。     

扩散处理对低温粉末渗铝涂层组织及硬度的影响研究

采用粉末包埋渗铝方法在K418B镍基高温合金表面制备了铝化物涂层,并在真空条件下对其进行了1080℃/4h扩散处理,采用扫描电子显微镜、能谱仪、电子探针、X射线衍射仪和维氏硬度计等分析了扩散处理前后试样的横截面显微形貌、涂层成分、主要元素分布、相结构及硬度。结果表明：扩散处理有利于涂层中元素的互扩散;扩散处理后,涂层厚度由扩散处理前的53.37μm增长至95.14μm,涂层主要相组成由ε-Al₃Ni相转变为β-NiAl相,涂层硬度从450HV_0.01降低至350HV_0.01;扩散处理使涂层与基体合金之间形成一层紧密结合的互扩散区,增强了涂层结构稳定性。     

低硬度薄膜厚度的简易检测方法

介绍了一种检测硬基体上软薄膜厚度的简易方法——显微硬度法。并就射频溅射MoS_2膜的厚度测量与XPS、X射线衍射、表面形貌仪等方法进行了比较。结果表明,此法具有一定的检测精度,可达到一般软薄膜厚度的测量要求。     

影响预应力锚夹片硬度测试值的几个因素

阐述了现行工程中大量使用的预应力锚夹片硬度测试中存在的影响硬度测试值的几个因素，并提出了减小硬度测量误差的一系列措施。     

PDMS薄膜表面有机硅耐磨涂层的制备研究

为了提高聚二甲基硅氧烷(PDMS)薄膜表面的硬度和耐磨性,进一步拓展微流控材料的应用,提出了以甲基三甲氧基硅烷(MTMS)和苯基三甲氧基硅烷(PTMS)为主要原料,在PDMS薄膜表面制备有机硅耐磨涂层的方法.同时,加入具有增韧效果的丙烯酸甲酯溶胶和HCl催化剂等原料,测试了不同组分对涂层耐磨性、硬度、附着性、光学透光性...     

水质腻子在客车上的应用

水质腻子在一些普通客车上使用比较普遍，由于其自身的特点及施工原因，容易产生鼓泡、开裂、难刮涂、附着力着等缺陷，本文从其组成和技术指标入手，有针对性地分析各种缺陷的产生原因及使用中的注意事项。     

HIPIMS Power for Improved Thin Film Coatings

High Power Impulse Sputtering (HIPIMS) has received increasing attention as a new sputtering technique. The main feature of the HIPIMS process is the high ionization percentages in the sputter flux. This can be used for film densification, surface modification, trench filling and other applications. Layers produced with HIPIMS show superior properties in many applications. The most investigated and promising HIPIMS application is for hard coatings in wear and corrosion protection (e.g., CrN or TiN). This application and the related coating equippment has been discussed in detail by W.‐D. Münz in a previous issue [1]. The significantly lower heat transfer to the substrate compared to standard magnetron sputtering is another advantage of the HIPIMS process. This enables high rate coating even on temperature sensitive substrates. HIPIMS also significantly changes the hysteresis curve in reactive sputtering, offering a much easier control of the reactive process. HIPIMS power supplies can be added to existing sputter systems with little or no system modification. By this way the process capability can be extended easily. Production power supplies with pulse energies up to 16MW and pulse frequencies up to 1 kHz are available. Design and features of these power supplies are discussed in this article.     

MO—PECVD SnO2—x气敏薄膜

以金属有机化合物(MO)四甲基锡[sn(CH_3)_4]为源物质,利用等离子体增强化学气相沉积技术,分别在单晶硅片、三氧化二铝陶瓷基片上淀积了纯净的SnO_(2-x)薄膜,对淀积的一些工艺条件,膜的结构、成分和薄膜元件的气敏性能进行了研究,并与普通PECVDSnO_(2-x)薄膜元件的气敏性能作了比较,对SnO_(2-x)膜的气敏机理作了探讨。     

CIS(CIGS)薄膜材料的研究进展

以CIS(CIGS)作为吸收层的太阳能电池因其诸多优异性能而成为最具潜力的第三代太阳能电池.首先介绍了CIS(CIGS)薄膜的性能与掺杂对电池的影响,讨论了多种薄膜沉积技术及其优缺点,重点介绍了几种低成本制备技术及其影响因素,最后阐述了CIS(CIGS)薄膜电池的发展情况,并展望了CIS(CIGS)电池的发展趋势.     

Magnetocaloric Effect in (001)-Oriented MnAs Thin Film

In this paper, a phenomenological model is used to calculate magnetocaloric properties of (001)-oriented MnAs films. Based on this model, it has been predicted the values of the magnetocaloric properties from calculation of magnetization as a function of temperature under very low external magnetic field change of 0.03 T. Moreover, a control of the change of a broad range of temperature could be achieved by tuning several substrate temperatures. This advantage should result in more efficient and global cooling devices. It is suggested that (001)-oriented MnAs films are suitable candidates as refrigerants near a room-temperature region with a large temperature span.     

Hybrid Metamodel—NSGA-III—EDAS Based Optimal Design of Thin Film Coatings

In this work, diamond-like carbon (DLC) thin film coatings are deposited on silicon substrates by using plasma-enhanced chemical vapour deposition (PECVD) technique. By varying the hydrogen (H₂) flow rate, CH₄−Argon (Ar) flow rate and deposition temperature (T_d) as per a Box-Behnken experimental design (BBD), 15 DLC deposition experiments are carried out. The Young’s modulus (E) and the coefficient of friction (COF) for the DLCs are measured. By using a second-order polynomial regression approach, two metamodels are built for E and COF, that establish them as functions of H₂ flow rate, CH₄-Ar flow rate and T_d. A non-dominated sorting genetic algorithm (NSGA-III) is used to obtain a set of Pareto solutions for the multi-objective optimization of E maximization and COF minimization. According to various practical scenarios, evaluation based on distance from average solution (EDAS) approach is used to identify the most feasible solutions out of the Pareto solution set. Confirmation experiments are conducted which shows the efficacy of the polynomial regression—NSGA-III—EDAS hybrid approach. The surface morphology of the DLCs deposited as per the optimal predictions is also studied by using atomic force microscopy.     

Thin Film Inspection with Millimeter-Wave Reflectometer

Abstract

Inspection of dielectric thin films (25.4–508 μm) placed directly above a conducting plate is performed with a W-band millimeter-wave network analyzer. The signal launched by a small antenna placed near the sample surface is picked up by a separate receiver. The phase of the received signal can be related to the thickness and permittivity of the thin films under inspection. While the transmitter and receiver are at larger distances from the dielectric surface, the system operates as a conventional reflectometer. But when they both are close to the surface, guided waves will be excited and even may become dominant over the direct reflection. The significance of the guided-wave contribution is controlled by the locations of the guided-wave poles in the complex k _ρ -plane. In this paper we employ a modal approach that previously was developed for geophysical remote sensing to study the effects of the guided waves, and to outline the limits of the conventional reflectometric method for evaluating thin films.     

K(TCNQ)薄膜的制备及其电双稳特性

在真空环境下,首次利用固态化学置换反应制备了K(TCNQ)薄膜,其分子结构与已报道过的K(TCNQ)单晶、多晶相同.但不同的是,在300K以上,K(TCNQ)薄膜具有可逆的双稳特性.因此预计在光电开关和电双稳存储器方面具有广泛的应用前景.     

MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响

为制备符合铁电场效应晶体管（ Ｆ Ｆ Ｅ Ｔ） 及铁电存储二极管（ Ｆ Ｍ Ｄ） 要求的高质量铁电薄膜,采用 Ｐ Ｌ Ｄ （ Ｐｕｌｓｅｄ Ｌａｓｅｒ Ｄｅｐｏｓｉｔｉｏｎ） 工艺, 制备了不同 Ｍ Ｆ （ Ｉ） Ｓ 结构的硅基铁电薄膜系统由 Ｃ－ Ｖ特性的对比分析可见, 影响 Ｃ－ Ｖ 特性的主要因素除了衬底类型、界面特性之外, 还有薄膜的结构设计在此基础上, 为改善铁电薄膜的 Ｃ－ Ｖ 特性提出了合理设想.