钛金属空芯光纤有机钙钛矿太阳能电池的设计、制备及其特性研究

优化太阳能电池的结构设计可提高太阳能 电池对光的捕获能力。本研究工作设计并制备了结构为钛 /致密二氧化钛/介孔二氧化钛+有机钙钛矿/空穴传输层/聚合物透明电极层的有机钙钛矿空 芯光纤太阳能电 池。对不同光照强度和光入射角度下电池光生电流和电压的分析表明,空芯光纤结构较平面 结构电池在光 捕获能力方面有所提升,光照强度在0－20000 lux范围内光生电压近似以对数函数形式增加;平行光入射钛 金属空芯光纤有机钙钛矿太阳能电池时,入射角度在30°－50°时达 到入射光量与反射次数的平衡,此时光生电压及电流达到较大值。     

研发改进提升薄膜光伏的效率

欧璃康太阳能专有的用于TCO沉积的低压化学气相沉积（LPCVD）工艺致使硅结内的光捕捉和光吸收的能力更高。通过改善TCO和单结非晶硅的协同作用,该创世界纪录的效率增益将改善商用薄膜硅光伏组件（对于单结非晶硅和非微昌类型）的性能。     

光弹效应在光电子器件中的应用

在直流负偏压120V作用下利用射频溅射和光刻剥离技术在InGaAsP/InP双异质结结构外延片表面淀积110nm厚、宽为2μm的W0.95Ni0.05金属薄膜应变条. 实验测得W0.95Ni0.05金属薄膜应变条边缘单位长度产生9.7×105dyn/cm压应变力.在这样压应变力作用下,W0.95Ni0.05金属薄膜应变条下InGaAsP/InP 双异质结结构内0.2～2μm深度范围内形成的条形波导的导波强度为1.5×10-3至1.7 ×10-1.与由W和SiO2应变薄膜所形成的光弹波导及其光弹光电子器件相比较,由W 0.95Ni0.05金属薄膜应变条形成的光弹效应波导结构在平面型光电子器件中有着更重要的实际应用.     

怎样选用元器件讲座（七）：光电池

光电池,又称为太阳能电池。它是一种将光能直接转换成电能的半导体光敏元件。常用的光电池,一般都是用硅材料加工而成的,所以又称为硅光电池,其结构如附图所示。实际上,它是一个大面积的PN结。在PN结两边引出两根电极引线( 、-);表面有一层蓝色膜,即一氧化硅抗反射膜,以减少光的反射,提高硅光电池的转换效率与正极引线相连的栅线,是为减小硅光电池的表面电     

基于平面光波导技术的阵列波导光栅发展概况

1 平面光波导技术 平面光波导(PLC)是使光沿其纵向传输而在横向上受到限制的光导体,能将光波束缚在光波长量级尺寸的介质中,波导只能传播某些特定模式的光,其作用机理是光波的全内反射,在光波导中传播的光波,不是纯粹的电磁辐射,而是入射光与波导中的光耦合的结果.     

TOSA中pin背光探测器的P-I非线性特性研究

TOSA中用到的pin背光探测器是监测与控制LD前光输出特性的敏感器件,其光功率(P)和光电流(I)应具有线性关系。测试发现,不同结构和尺寸的探测器的P-I特性可能有所不同。目前普遍使用的正面进光的pin平面型光探测器,常存在某种范围的P-I非线性。分析指出,这种非线性与器件内部结构、表面接触层情况、入射光密度、外加负偏压大小和负载电阻有关;并指出,当pin-PD中pi结位置合适、外加负偏压1.5 V以上,负载电阻1 kW,LD前光入射光功率8 mW以下,则pin背光探测器的P-I非线性可忽略。     

全硅结栅控制双注入波导电光开关及调制器的一种新方案

分析了全硅结栅控制双注入波导电光开关及电光调制器的工作原理,给出了器件的某些参数,并对其频带宽度进行了数字估算,经有效折射率△n_(eff)分析表明,这类DIFET波导电光器件是切实可行的。     

条形半导体激光器中电过程和光波导过程的精确理论

提出条形半导体激光器中稳态电过程和光波导过程及其相互作用的精确模型,并从电极电压算起得出阈值以上的电压电流分布和基模光场分布的相互影响和变化的计算机结果.指出简单的p-n结注入公式和任何固定形式的结电流分布假设对分析条形半导体激光器中的电过程和光波导过程都不适用,本文还探讨了光功率-注入电流特性出现扭折的机制和条件.     

Ag纳米粒子等离子体共振增强太阳能电池吸收

针对薄膜太阳能电池硅薄膜层吸收效率较低的问题,提出了运用金属纳米粒子局域表面等离子体共振(LSPR)增强太阳能电池的吸收效率,采用时域有限差分(FDTD)法,模拟计算了太阳能电池中不同厚度的硅薄膜层吸收特性,分析了不同几何参数的矩形Ag纳米粒子与Ag背反射膜对增强太阳能电池吸收效率的影响作用。计算结果表明,硅薄膜层厚度为500nm的太阳能电池具有较高的吸收效率,通过调整Ag纳米粒子的相关参数,有效地降低了太阳电池硅薄膜表面的反射损耗,取得最大吸收增强因子为1.35。Ag背反射膜有效地降低了Ag纳米粒子硅薄膜结构的透射损耗,其最大的吸收增强因子达到1.42。     

基于氮氧化硅与聚合物混合集成低功耗全内反射热光开关

利用具有相反热光特性的氮氧化硅(SiON)与聚合物材料,采用混合集成技术设计了一种低功耗全内反射(TIR)热光波导开关。该光开关通过在两交叉的氮氧化硅波导芯的X结中心部分制作一个深度等于波导芯厚度的狭缝,并在其中填充与波导包层相同的聚合物材料,同时在狭缝聚合物上方制作加热电极来实现开关功能。理论分析表明,通过选择与氮氧化硅折射率相匹配的聚合物材料,并优化设计单模光波导尺寸,两交叉波导间的夹角、所开狭缝的宽度以及相应的加热电极结构,对于1550nm的工作波长,开关的驱动功率在低至2.3mW时仍可实现消光比均大于36dB,串扰均小于-36dB的TE与TM模式。     

Performance enhancement of III–V compound multijunction solar cell incorporating transparent electrode and surface treatment

To enhance the performance of tandem‐type III–V compound multijunction solar cells, the transparent indium‐tin‐oxide (ITO) film was used to replace conventional metal electrode for increasing the incident light area. For performing ohmic contact between the n‐AlInP window layer and the ITO film, a transition layer of Au/AuGeNi thin metals was used and investigated. Besides, to improve ohmic performance and to passivate the surface states, (NH₄)₂S_x surface treatment was used. The conversion efficiency of the (NH₄)₂S_x‐treated triple‐junction solar cells was increased more than 3.09%. Furthermore, an improved oblique SiO₂/SiO₂/ITO triple antireflection structure was designed to reduce the reflectivity of illuminating sunlight. The conversion efficiency of the (NH₄)₂S_x‐treated triple‐junction solar cell with improved antireflection structure could be improved more than 4.23%. Simple and effective approaches were designed to improve the performances of tandem‐type III–V triple‐junction solar cells. Copyright © 2010 John Wiley & Sons, Ltd.     

绒面掺铝氧化锌透明导电薄膜研究进展

绒面掺铝氧化锌(AZO)透明导电薄膜由于电阻率低、在可见光区域透过率高、绒面结构能有效散射入射光,提高太阳电池光电转换效率,被广泛应用于太阳电池前电极。概述了绒面AZO薄膜的制备方法,重点介绍了磁控溅射技术沉积AZO薄膜后再进行湿法刻蚀制绒面方法,制备的样品呈现"坑状"或"类月球地貌"的绒面,并讨论了工艺对薄膜结构、光电性能和刻蚀行为的影响,最后介绍了绒面AZO薄膜在硅薄膜太阳电池中的应用,进一步降低生产成本和实现大规模产业化生产是绒面AZO薄膜的发展趋势。     

Fabrication of highly transparent self‐cleaning protection films for photovoltaic systems

A moth‐eye anti‐reflective structure was fabricated by hot‐embossing and UV nanoimprint lithography on a solar cell protective film to suppress the reflection of incident light. Moreover, a superhydrophobic surface was developed by reducing the surface energy by forming a hydrophobic self‐assembled monolayer coating on an anti‐reflective structured resin surface. Therefore, the transmittance of incident light was increased by the anti‐reflective structure. As a result, the solar cell efficiency was enhanced and the total accumulated electrical energy generated by a solar cell with a nano‐patterned polymeric film was increased. The efficiency of each solar cell was evaluated by an analysis of its I‐V characteristics using a solar simulator, and the external quantum efficiency according to the wavelength of incident light was analyzed by using an incident photon‐to‐current conversion efficiency system. Finally, the enhancement of the generated power was confirmed by a field test and a power charging experiment. Copyright © 2012 John Wiley & Sons, Ltd.     

分子束外延生长的GaAs/GaInP双结电池研究

We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecularbeamepitaxy(MBE).The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction,with an interconnected GaAs tunnel junction.A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell,while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell,respectively.The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed.It is demonstrated that the MBE-grown phosphide-containing Ⅲ–V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.     

不同反射率双面太阳电池背面综合转换效率差异性研究

双面太阳电池是指硅片的正面和反面都可以接受光照并产生光生电压和电流的太阳电池,由于受到结构等各种因素的影响,目前还没有完善的测试方案用于双面太阳电池的完整测试。基于太阳能仿真环境PC1D,采用控制变量的方法来测定电池背面反射率对双面太阳电池综合转换效能的影响,研究了双面电池在不同背面受光条件下的测试结果,得出电池背面背景反射率增大时,双面太阳电池的综合转换效能的变化规律;确定了双面电池合理的测试条件,给出了双面电池科学的测试方案。结论对双面太阳电池的测试和应用具有重要意义。     

太阳电池栅线优化设计

优化设计太阳电池的电极图形可以获得高的光电转换效率。文中以实例介绍了晶体硅太阳电池上丝网印刷电极的优化设计,讨论了电池的功率损耗与扩散薄层电阻及细栅线宽度的关系,在原始设计的基础上设计出了理想尺寸的太阳电池栅线。经过优化改进的太阳电池可降低由电极设计引起的总功率损失,并且提高了电池片的光电转化效率。     

Design,fabrication, and analysis of transparent silicon solar cells for multi‐junction assemblies

Transparent silicon solar cells can lead to an increased efficiency of silicon‐based multi‐junction assemblies by transmitting near and below band gap energy light for conversion in a low band gap solar cell. This analysis shows that the maximum efficiency gain for a low band gap solar cell beneath silicon at a concentration of 50 suns is 5.8%, based on ideal absorption and conversion of the photons. This work analyzes the trade‐offs between increased near band edge absorption in the silicon and silicon solar cell transparency. Application of these results to real cases including a germanium bottom solar cell is analyzed, leading to a range of cases with increased system efficiency. Non‐ideal surfaces and real silicon and germanium solar cell device performance are presented. The range of practical system gains may be as low as 2.2 – 1% absolute when compared with the efficiency of a light‐trapped silicon solar cell for 1‐sun operation, based on this work. Copyright © 2012 John Wiley & Sons, Ltd.     

Modeling extremely thin absorber solar cells for optimized design

Extremely thin absorber (ETA) solar cells based on inorganic semiconductors are theoretically analyzed by a model that considers the absorber as being a pin junction, with tunneling‐assisted defect recombination. Tunneling recombination turns out to be very important in ETA solar cells, owing to the high electrical fields in the absorber, which establishes a minimum thickness for the absorber layer, which is calculated to be around 15 and 20 nm for CdTe and CuInS₂, respectively. Nevertheless, 15% efficient CdTe and CuInS₂ ETA solar cells are possible, even at low diffusion lengths down to 10 nm. Additionally, the modeling provides optimum values for the thickness and number of absorber layers for CdTe and CuInS₂ ETA solar cells, as a function of the minority‐carrier diffusion length and diffusion constant, for cells with and without light trapping. The calculations predict that light trapping serves two purposes: to enhance the cell efficiency by up to 5% absolute, and to use a simpler structure compared with the situation without light‐trapping. Copyright © 2004 John Wiley & Sons, Ltd.     

一种柔性染料敏化太阳能电池的初步研究

染料敏化太阳能电池(DSSC)与商用硅电池相比,由于具有转化效率较高、制作成本低等一系列优点,近年来已受到人们的广泛关注.简要介绍了DSSC太阳能电池的结构和基本原理,重点分析了DSSC太阳能电池的关键组成和影响光电转化效率的因素.采用胶带涂覆法在柔性ITO衬底上制备了多孔纳米TiO2薄膜,通过给其配置相应的染料和电解...     

铝背场对单晶硅太阳电池输出特性的影响

利用PCID软件模拟了n~+/p-p~+结构的单晶硅太阳电池铝背场与硅片厚度对其输出特性的影响.结果表明,有铝背场时太阳电池获得明显的开路电压、短路电流以及光电转换效率的增益;硅片厚度越小,铝背场对其输出特性的影响越大;在有铝背场情况下,硅片厚度为120μm时,可获得最大的光电转换效率.

Abstract：

The PC1D was usecl to simulate the influence of Al-BSF and wafer thickness on electrical properties of n~+/p-p~+ structural monocrystalline silicon solar cells. It is found that solar cells with the Al-BSF structure can gain obvious open circuit voltage, short-circuit current, as well as photoelectric conversion efficiency; the smaller the wafer thickness is, the bigger of the effect of Al BSF works on the electrical properties; when the wafer thickness is 120 m, the solar cells can get the biggest photoelectric conversion efficiency.