共查询到19条相似文献,搜索用时 265 毫秒
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激光直写系统是制作光刻掩模和ASIC器件的新型专用设备。微细加工光学技术国家重点实验室引进了男内第一台激光直写系统,利用这台系统,通过高精度激光束在光致抗蚀剂上扫描曝光,能够把设计图形直接转移到掩模版或芯片上,本文介绍激光直写系统在ASIC器件制作中的应用和具体工艺。 相似文献
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基于液晶光学相控阵(LCOPA)电极基板的子阵列连接方案,利用电子束直写和激光直写混合光刻技术,进行了通光区域电极条纹、外围电路和子阵列联络孔的微纳米加工工艺研究。结果表明利用激光直写技术,可以形成最小线宽0.5μm的液晶光学相控阵电极图案,曝光时长48 min,具备可制造性。利用富含导电颗粒的SX AR-PC5000/90.1涂层,可以有效解决电子束在绝缘玻璃基底上直写时由电荷积累所产生的电子束曝光场拼接偏移与火花放电等问题,保证了电子束直接曝光子阵列电极上下导电层之间的联络孔套刻精度。利用特定电子束直写对准标记,解决了绝缘体表面在混合光刻中套刻对位精度问题。 相似文献
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使用传统的微加工技术,如各向异性或各向同性干刻蚀、湿刻蚀只能加工有限形貌的表面,为了克服这一缺点,发展了多层掩模技术、激光三维立体光刻、电子束直接写入技术等许多三维微加工技术。灰度光刻最被看好,它通过灰度掩模把加工光束能量密度分布调制成不同的形状,对光刻胶进行曝光,微型器件一次成形,不需要移动掩模或移动加工晶片,也不需要对光刻胶进行热处理,只需要对掩模版进行一定的编码和标准的光刻设备,容易和其他IC工艺相兼容,实现系统芯片结构的制作。本文分析了它的物理机制、掩模类型、编码过程、约束条件和优化方法。 相似文献
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本文叙述了用匀胶铬版制作光刻掩模代替超微粒干版制作光刻掩模的工艺过程,文中就图象发生器直接曝光匀胶铬及图象的黑白反转工艺作了较为详尽的介绍,对集成电路的光 刻技术有一定参考作用。 相似文献
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《电子工业专用设备》1999,(1)
DWL—400直写光刻系统由德国HeidelberyInstrumentsMikrote-chnikGmbH公司生产的DWL—400型高精度激光直写光刻系统,专用于高分辨掩模的制作和直写应用。该系统作图面积可达400mm×400mm,且具有亚微米结构... 相似文献
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Yoshimura T. Inoguchi T. Yamamoto T. Moriya S. Teramoto Y. Arai Y. Namiki T. Asama K. 《Lightwave Technology, Journal of》2004,22(9):2091-2100
This paper presents core technologies for a self-organized microoptical system (SELMOS) within optoelectronic computers; mass-productive fabrication processes of waveguide films and new types of self-organized lightwave networks (SOLNETs) for three-dimensional (3-D) optical wiring with optical Z-connections. Waveguide films are fabricated by the built-in mask method, which is reusable and can construct surface-normal mirrors/filters at one time within photolithographic accuracy. Beveled core edge walls are made by the tilted ultraviolet (UV) exposure through the built-in mask using a photodefinable material. Near- and far-field patterns reveal that the walls act as micromirrors for optical Z-connections. SOLNET is a network consisting of self-organized coupling waveguides between misaligned optical devices. The self-organization is generated in a photorefractive material by self-focusing of the two write beams from the two devices. Direct SOLNET, where wavelengths of the write beam and the signal beam are the same, is demonstrated using a laser diode. Reflective SOLNET, where one of the two write beams is replaced with a reflected write beam from the edge of the coupled device, realizes two-beam-writing SOLNET in a one-beam-writing configuration. It is especially effective when the coupled device cannot transmit write beams. The proof-of-concept is demonstrated both theoretically and experimentally. These results indicate a possibility to form 3-D optical wiring simply in SELMOS. 相似文献
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An improved process for semitransparent mask lithography is described. The uniformity of mask transmittance is increased by adapting the electron beam exposure field size to a binary multiple of the pattern period. In addition surface roughness of resist patterns is reduced by exposure of the resist-coated sample to an acetone atmosphere which results in negligible micro roughness.
Using this process waveguide tapers employing a symmetric layer structure were fabricated. The tapers exhibit fiber-chip coupling losses of 1.6 dB after Fresnel correction and lateral alignment tolerances of ±2.2 μm for 1 dB excess loss. These values are comparable to results obtained for waveguide tapers fabricated using direct write electron beam lithography. This proves the described process to be suitable for the fabrication of relief type structures for optoelectronic integrated circuits. 相似文献
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The digital simulation of a photoplotter’s direct write process, where the reconfigurable mask is a liquid crystal microdisplay, leads to the development of two proximity correction techniques. The first works by modifying dimensions and in adding serifs or assistant features to the original structure design. The second, more innovative and only exploitable with a grey level capable direct writing device, precompensates structures with a multilevel spatial modulation of the luminous energy. We also present the computer simulation used to develop these OPC techniques and confirm its performance by comparing modelled and experimental results. 相似文献
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激光微细熔覆柔性直写厚膜电阻和电极结合行为的研究 总被引:3,自引:0,他引:3
采用了激光微细熔覆柔性布线技术,结合数控CAD/CAM功能,在无掩模的基础上实现了在绝缘基板上直写厚膜电阻和电极单冗,但由于激光和电阻材料的相互作用是一个传热传质的复杂过程,电阻和电极间的界面行为将严重地影响该元件的可靠性和再现性等。针对上述情况,本文通过优化工艺设计方案进行电阻和电极的直写,并从电阻和电极界面的结合行为以及对形成电阻的表面性能、电气性能的影响进行分析和讨论。结果表明采用该优化工艺所制备的电阻和电极结合良好,性能和质量可靠稳定。 相似文献
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将涂有光致抗蚀剂的硅片或其它光敏材料置于由多束相干光以某种方式组合构成的干涉场中,可以在大视场和深曝光场内形成孔、点或锥阵周期图形,光学系统简单廉价,不需掩模和高精度大NA光刻物镜,采用现行抗蚀剂工艺。文中介绍的双光束双曝光法得到的阵列图形周期d的极限为dm i n=λ/2,四光束单曝光的周期略大,为前者的2倍,三光束单曝光得到2/3 d周期的图形,并且图形不受基片在曝光场中位置的影响,适合大面积尺寸器件中周期图形的制作,而三光束双曝光和五光束曝光的结果是周期为2d的阵列图形,并且沿光轴方向光场随空间位置也作周期变化,适合在大纵深尺寸范围内调制物体结构。 相似文献
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U. Drodofsky M. Drewsen T. Pfau S. Nowack J. Mlynek 《Microelectronic Engineering》1996,30(1-4):383-386
Atom lithography provides a new technology that enables one to write directly nanometer scale structures onto a substrate in a parallel process. With this technique the trajectories of atoms are manipulated by light forces that efficiently focus the atoms in a standing light field produced by a laser. By chosing different standing light field configurations one can write different periodic patterns. Theoretical calculations predict a linewidth of the deposited structures in the range of 10–20 nm. The technique is a parallel, direct and species selective process involving low particle energy that prevents any damage of the substrate. 相似文献
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对40 Gb/s OTDM系统中光纤光栅色散补偿器进行偏振模色散补偿的研究 总被引:3,自引:2,他引:1
改变光纤光栅紫外曝光系统 ,在相位掩模板后插入一个旋转装置 ,使得光纤在制作过程中可以进行某种旋转。通过这种方法制作的光纤光栅偏振模色散减小到平均差分群时延 (DGD)约为 0 2ps,而没加旋转制作的光纤光栅平均DGD约为 18 2 ps。采用两个这种低偏振模色散 (PMD)的光纤布拉格光栅 (FBG) ,成功地在 4 0Gb/s光时分复用 (OTDM)系统中补偿了约 2 0 4 0 ps的色散 ,该系统在经过 12 2km普通单模光纤传输后 ,未发现PMD的影响 ,传输功率代价小于 1 4dB。 相似文献