Investigation of SiGe-on-Insulator Novel Structure

SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.     

气态源分子束外延生长GexSi1-x/Si异质结合金

采用气态源分子束外延法成功地生长了ＧｅｘＳｉ１－ｘ／Ｓｉ异质结合金材料，所使用的气体分别是乙硅烷和锗烷。高能电子衍射被用于原位监控生长层的表面重构状态。在一定的生长温度下，ＧｅｘＳｉ１－ｘ合金组分ｘ取决于锗烷和乙硅烷的流量比。外延层的表面形貌与锗组分的大小、生长层的厚度及生长温度有关。结果表明，较大的锗组分和较高的生长温度利于由二维模式向三维模式转变的外延生长。     

Solidification in the system Al-Ge-Si: The phase diagram,coring patterns,eutectic growth,and modification

In the ternary system Al-Ge-Si, the binary eutectic reactions, L (liquid) ⇔ (Al) + (Si) and L ⇔ (Al) + (Ge) are connected by a monovariant valley, L ⇔ (Al) + (SiGe), falling from 578 °C at 12.7 wt pct Si to 424 °C at 53 wt pct Ge. The binary, solid eutectic surface extends from the Al corner of the ternary phase diagram (1.65 wt pct Si to 5.2 wt pct Ge) across to the continuous (SiGe) solid solution which contains very little Al: several tie triangles, L-(A1)-(SiGe), have been determined using thermal analysis and electron microprobe analysis (EMPA). Optical and scanning electron microscopy (SEM) examination reveals that coring in the normal (SiGe) phase is discontinuous, showing composition banding, which indicates that stationary 111 facets of the solid solution were exposed to the liquid for extended periods up to 500 seconds; details of this interrupted coring were quantified by EMPA. Similar, smaller, and more gradual variations could also be detected in the (Al) matrix, and these compositional fluctuations are considered to reflect discontinuities in the local eutectic growth rates. Modification and twin-ning, induced by Na, are observed in both Al-Si and Al-Ge but decrease progressively with Ge content; coring in the modified ternary alloys is more continuous.     

Acheivement of Nano-Scale SiGe Layer with Discrete Ge Mole Fraction Profile Using Batch-Type HVCVD

The strained Si grown on the relaxed SiGe-on-insulator C-MOSFET's is a promising device for the future system LSI devices with the design rule of sub-micron. The achievement of the discrete Ge mole fraction in the SiGe layer is a key engineering in low-temperature SiGe epitaxial growth using HVCVD. The pre-flow of GeH4 gas enhanced the Ge mole fraction and SiGe layer thickness. In addition, the Ge mole fraction and SiGe layer thickness increases with the gas ratio of GeH4/SiH4 + GeH4, process temperature, and gas flow time. However, the haze was produced if the Ge mole fraction is above 22wt%. The discrete-like Ge mole fraction with 22 wt% in 10 nm SiGe layer was obtained by the pre-flow of GeH4 for 10 s, the mixture gas ratio of GeH4/SiH4 + GeH4 of 67%, and the gas flow time for 150 s at the process temperature of 550 C.     

UHV/CVD Low-Temperature Si Epitaxy Used for SiGe HBT

Low-temperature-epitaxy n-type silicon layers were grown on arsenic-doped n -type silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD). The transition region thickness of the Si layers grown under different PH3 flux and different growth temperature were investigated by spreading resistance probe. Results showed that the growth temperature had remarkable influence on the arsenic diffusion from the Si substrate. The thicknesses of the transition region were 0.16 μm grown at 700 ℃ and 0.06 μm grown at 500 ℃, respectively. Moreover, the dopant profiles were very abrupt. X-ray diffraction investigation of the epitaxial Si layer showed the quality of Si layer was very high.SiG e HBT device was fabricated by using a revised double-mesa polysilicon-emitter process. Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard, and the leakage current is only 0.3 μA under a reverse voltage of - 14.0 V. The SiGe HBT device had also good output performance, and the current gain is 60.     

Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography

The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.     

MnFe1-xTixP0.63Ge0.12Si0.25（x=0,0.01,0.02,0.03）系列化合物的磁热效应

通过X射线衍射分析(XRD)和振动磁强计(VSM)磁性测量,研究了替代元素Ti替代Fe元素含量的MnFe1-xTixP0.63Ge0.12Si0.25(x=0,0.01,0.02,0.03)系列化合物的物相结构与磁热效应的影响。结果表明:该系列化合物的结构为Fe2P型六角晶系结构,空间群为P62m。主相均为(Mn,Fe)2(P,Ge,Si),并含有少量的第二相(Mn,Fe)3Si相。随着Ti原子替代Fe原子的增加化合物的晶格常数a增大,晶格常数c略有减小,晶胞体积V基本保持不变。随着Ti含量增加居里温度(TC)减小,热滞ΔThys的大小改进不太明显。MnFeP0.63Ge0.12Si0.25的TC为305 K,当外磁场变化为0～1.5 T时最大磁熵变的绝对值为14.8 J.(kg.K)-1。     

Research Advance on Magnetocaloric Effect of La-Fe-M(Al, Si) Compounds

Inviewofenergysavingandenvironmentalpro tection ,magneticrefrigerationnearroomtemperaturehasastrongimpactonconventionalgascompressiontechnology .However ,coolingefficiencyofthesystemformagneticrefrigerationismainlydecidedbythemagnitudeofmagnetocaloriceffectformagneticrefrig eratingmaterialsinthesystemunderacertainmagnet icfieldchange .Therefore ,developmentofnewrefrig eratingmaterialswithgreatmagnetocaloriceffectnearroomtemperatureisespeciallyimportant .Therearetwoparameterswhichareusedtochara…     

Magneto-Caloric Effect of Gd5Si2Ge2Compounds under Different Processing Conditions

The magneto-caloric effect of Gd5 Si2Ge2 compounds produced by various techniques is investigated in terms of their magnetization behaviors in the magnetic field from 0 to 2.0 T.The studied materials include arc-melted, annealed and sintered alloys.The results demonstrate that the Gd5Si2Ge2 alloys obtained under different processing conditions possess distinct magneto-caloric effect due to their various microstructures.Proper annealing treatment can enhance the magneto-caloric effect of the alloy remarkably.While the sintered alloy bears relatively lower value of magnetic entropy change ( △ SM) than arc-melted one.The magnetic entropy change of the annealed Gd5 Si2Ge2 alloy arrives the arrives the maximum value of - △SM = 15.29 J· kg-1· K-1 for magnetic field change under 2.0 T in the present work.     

Magnetocaloric properties of the Gd5Si2.05-xGe1.95-xMn2x compounds

The influence of the manganese-alloying on the structure and magnetocaloric properties of the Gd5Si2.05Ge1.95 compound was studied by X-ray powder diffraction and magnetization measurements.The Gd5Si2.05-xGe1.95-xMn2x(2x=0,0.03 and 0.08) compounds crystallized in the Gd5Si2Ge2-type monoclinic structure.In all X-ray powder diffraction patterns,a minor hexagonal Gd5Si3 phase was observed as a second phase.With increasing Mn content,the unit cell volume increased.For the compounds with x=0,0.03 and 0.08,the fi...     

Resistance to shape refinement of precipitates in Al-(Si,Ge) alloys during thermal cycling

The present work addresses the response of Si-Ge precipitates in Al-0.5Si-0.5Ge (at. pct) to thermalcycling treatments of the sort known to refine the shapes of Ge precipitates in binary Al-Ge alloys. Alloys aged at 250 °C contained both small, platelet precipitates on {111} planes and larger, equiaxed precipitates that were heavily twinned. Thermal cycling between 250 °C and 360 °C led to partial or complete dissolution of the platelets. However, the equiaxed particles coarsened at an essentially constant shape; the shape refinement that led to untwinned, single-variant octahedral precipitates in binary Al-Ge did not occur. The apparent reason is the heavy twinning of the Si-Ge precipitates, which produces particles with a nearly spherical shape and rounded, incoherent interfaces and is, hence, a viable mechanism for relaxing the large misfit strain of the precipitate structure. The twinned particles undergo normal coarsening at an essentially constant shape. After thermal cycling, the precipitates contain Si and Ge in the approximate ratio of 70Si-30Ge, which is in the composition range expected for the cycling temperature.     

Mg、Si对Al—Mg2Si3铸造铝合金力学性能和耐蚀性能的影响

研究了合金元素Ｍg、Ｓi对Al-Mg2Si3铸造铝合金性能的影响．在Ｍg含量一定时,随Ｓi含量的增高,合金的抗拉强度逐渐增高;当SI＞3．０％时,其变化趋势减弱,且耐蚀性变差。当Si含量一定时,随Ｍｇ含量的增高,合金强度、塑性均下降,耐蚀性无明显变化。通过恒应变速率拉伸试验（ＣＥＲＴ）试验和徽观组织结构分析,指出了晶界Mg偏析加速应力腐蚀．     

29Si CP/MAS NMR of phosphorus-bearing organosilicon compounds

While liquid-state 29Si NMR of phosphorus-bearing organosilicon compounds with more than one phosphorus per molecule can take advantage of the presence of J-coupling nJ(31P29Si) for purposes of structural assignment from J-coupling patterns, conventional 29Si CP/MAS spectra of such molecular solids do not reveal structural details in a straightforward manner. For such compounds it is necessary to obtain 29Si CP/MAS spectra under conditions of simultaneous 1H- and 31P-high power decoupling in order to derive reliable 29Si chemical shift information. 29Si CP/MAS NMR spectra, obtained with and without 31P high power decoupling during the acquisition time, of several organosilicon compounds containing SixPy (x = 1-10, y = 1-10) moieties are reported.     

二次电子成分衬度成像方法在异质结半导体材料和器件的微结构研究中的应用

阐述了高分辨二次电子成分衬度像的成像原理、成像条件和实验方法，介绍了一种新的试样制备方法，讨论了各种制样方法的特点。以多层Ｐ＋Ｓｉ１－ｘＧｅｘ／ｐＳｉ异质结内光发射红外探测器为例，介绍了二次电子成分衬度像观察技术在异质结半导体材料和器件微结构研究中的应用。将这种技术与通常的透射电子衍射衬度方法进行了比较，讨论了它在异质结半导体材料和器件中的应用前景。     

Synthesis and photoluminescence properties of octahedral K_2(Ge,Si)F_6:Mn~(4+) red phosphor for white LED

A novel red-emitting K_2(Ge,Si)F_6:Mn~(4+) phosphor with uniform morphology was synthesized by co-precipitation method. The pure K_2GeF_6 phase with P63 mc space group other than P3m1 space group was affirmed just by incorporation of Si in K_2GeF_6 at room temperature according to XRD characterization. SEM images showed lamellar and octahedron grain morphology for K_2GeF_6:Mn~(4+) and K_2(Ge,Si)F_6:Mn~(4+) phosphors, respectively. It was also found that the photoluminescence excitation(PLE) and photoluminescence(PL) showed slight displacement in K_2GeF_6:Mn~(4+) and K_2(Ge,Si)F_6:Mn~(4+) system. And the zero-phonon line(ZPL) of the PL spectrum of K_2GeF_6:Mn~(4+) with Si showed a strong peak. Meanwhile crystalline field surrounding Mn~(4+) changes could affect the decay time in this fluoride system. The color gamut of the LED devices based on K_2(Ge,Si)F_6:Mn~(4+) and K_2GeF_6:Mn~(4+) reached up to 94.58% NTSC(National Television Standards Committee) and 94.386% NTSC, respectively, that was much higher than that based on nitride red phosphors. All these original characteristics in K_2(Ge,Si)F_6:Mn~(4+) phosphor are desirable for potential applications as a red phosphor for improving lighting and display quality of conventional white LEDs.     

Growth and interface of amorphous La2Hf2O7/Si thin film

Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity (XRR) and X-ray photoelectron spec-troscopy (XPS). When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.     

Effect of Al22Si/ZL102 bimetal interface fabricated by extrusion at near-eutectic temperature

The Al22Si/ZL102 bimetal was designed and prepared by extrusion at near-eutectic temperature.The properties and fracture behaviors of different surface treatments between oxide film and zinc coating were compared between the Al22Si and ZL102 bimetal.The average bonding strength of bimetal with intermittent oxide film interface was about 89.3 MPa, which is higher than that of the bimetal fabrica-ted by zinc coating method (about 76.3 MPa).During the process of extrusion, the oxidation film was extruded to crush and the metal was extruded through the micro-cracks of the oxidation film, then the two surfaces were joined together.Altogether, the results showed that extrusion at near-eutectic tem-perature is favorable for achieving a high-quality metallurgical bonded interface.     

Effect of Si on high temperature oxidation of 30Cr13 stainless steel

The effect of Si on the high temperature oxidation behavior of the 30Cr13 martensitic stainless steels was investigated.The underlying mechanism was further discussed by oxidation kinetics curves, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis.It was ob-served that the addition of Si can significantly reduce the mass gain per unit area and the oxidation rate of the experimental steels.With the increase of Si content, the film surface composed of the wheat-like oxides turned into the small granular oxides after oxidation for 120 h.The SiO2 film formed on the metal substrate inhibited the outward diffusion of the metal cation and the inward diffusion of the oxygen anion; thus, the high temperature oxidation resistance was enhanced.     

Si含量对316H钢耐铅铋腐蚀性能的影响

316H钢具有较好的高温力学性能和耐腐蚀性能,是铅铋快堆主要候选结构材料.Si元素的加入会提升材料在铅铋中的耐蚀性,同时也会对组织产生影响.通过向316H钢中加入不同含量的Si元素,采用OM、SEM、XRD进行组织分析,对不同Si含量试验钢在550℃氧控的铅铋环境下进行动态腐蚀性能研究.结果表明,Si元素可有效提升31...     

高温退火和添加Si对仿M10铁基烧结合金显微组织的影响

在一种仿M10粉末冶金铁基烧结合金显微组织中出现了针状碳化物,通过高温退火和添加Si元素的方式研究了针状碳化物的演变特征.采用X射线衍射和能谱分析确认了这是一种M2C型碳化物.结果表明：M2C是一种稳定性较高的亚稳相,高温退火时Mo、Cr、V元素向基体内扩散使M2C可以断裂、球化和分解.提高退火温度能加快针状碳化物形貌和结构的转变.Si元素可进入更稳定的M6C型碳化物中,抑制M2C的形成,显微组织中针状和块状碳化物共存.