共查询到19条相似文献,搜索用时 109 毫秒
1.
本文介绍了研制GaAs:Cr,InP:Fe光导形状的过程,实验显示了形状对光的响应特性,利用光导开关来探测皮秒光脉冲的波形,并且利用光导开关的原理研制成新型的超宽带雷达实验室模型。实验显示了它的脉冲辐射和接收波形。 相似文献
2.
《中国无线电电子学文摘》1994,(6)
TNZ 94060160皮秒光导开关的研制及其应用/袁乃昌,阮成礼,林为干(电子科技大学)//电子科学学刊一1994,’16(5).一518~522 介绍了研制GaAs: Cr,InP:Fe光导开关的过程.实验显示了开关对光的响应特性,利用光导开关来探测皮秒光脉冲的波形,并且利用光导开关的原理研制成新型的超宽带雷达实验室模型.实验显示了它的脉冲辐射和接收波形.图7表l参7(文)TN204,丁N24 94060161二元光学波面变形器件的研究/包红春,部敏贤,金国藩,严瑛白(清华大学)11光学学报一1994,14(9).一习88一991基于计算全息原理设计了二元光学波面变形器件,一块二元光学器件… 相似文献
3.
4.
实验测试了触发光脉冲对光电导开关响应速度的影响;建立了满足光导开关触发光脉冲参量的光生载流子速率方程,并模拟出光生载流子浓度随触发光脉冲、脉冲宽度的变化规律,分析了光脉冲对光电导开关响应速度的影响及引起输出电脉冲上升沿变化的原因. 相似文献
5.
GaAs 光导开关在较高的场强下可工作于雪崩模式,为此设计了异面体结构的GaAs 光导开关以提高开关场强。
设计的开关芯片厚度为2mm,电极间隙为3mm,利用半导体激光二极管对开关进行了触发实验。当开关充电电压超过
8kV 后,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关开始了雪崩工作模式,且随着开关电场不断增加,
开关输出电压幅值也线性增加。在不同触发能量下,开关输出电压幅值和波形基本没有改变,但在较高的触发能量和高
的偏置电场下,开关抖动较小,实验中开关获得的最小抖动约500ps。 相似文献
6.
紧凑型固态化是脉冲功率技术发展的趋势,研究了基于 GaAs光导开关和陶瓷平板传输线的固态脉冲功率技术。紧凑型固态脉冲功率系统的关键部件主要包括固态陶瓷平板传输线,高功率 GaAs光导开关以及激光二极管触发系统。研究了单路 Blumlein脉冲形成线输出特性,分析了 GaAs光导开关非线性导通带来的损伤,并开展了单路 Blumlein脉冲形成线实验。结果表明:研制基于固态平板传输线、光导开关以及激光二极管触发系统的紧凑型脉冲功率具有可行性,负载上获得了超过20 kV的高压脉冲输出。 相似文献
7.
半导体激光二极管触发下砷化镓(GaAs)光导开关工作于雪崩模式,为此设计了异面体结构的GaAs 光导开关以提高开关场强.设计的开关芯片厚度为2 mm,电极间隙为3 mm,利用半导体激光二极管对开关进行触发实验.当开关充电电压超过8 kV 后,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关开始雪崩工作模式.随着开关电场不断增加,开关输出电压幅值也线性增加,但开关输出波形没有改变.对开关抖动进行测试,其测试结果显示开关偏压对抖动影响很大,随着开关偏压增加,开关抖动减小,当开关偏压升至15 kV 时,开关获得最小抖动约500 ps. 相似文献
8.
9.
10.
利用能量较低的脉冲激光二极管,在较高场强下触发GaAs光导开关,使其工作于雪崩模式,从而产生纳秒上升前沿的快脉冲电压。GaAs光导开关采用垂直体结构设计,芯片厚度为2 mm,电极形状分别为圆环和圆面,触发光脉冲从圆环穿过。快脉冲产生由同轴Blumlein脉冲形成线完成。对基于GaAs光导开关的同轴Blumlein脉冲线进行了模拟仿真和实验,当充电电压超过8 kV(40 kV/cm)后,开关开始了雪崩工作模式。当充电电压约为15 kV(75 kV/cm)时,在50 Ω负载上获得了约11 kV的脉冲电压,实验波形与仿真波形一致。对开关抖动进行了测试,其测试结果显示开关充电电压对抖动影响很大,随着开关偏压增加,开关抖动减小,开关获得了最小抖动约700 ps。 相似文献
11.
The picosecond photoconductive switches are developed and used to detect the pulse laser waveform. By using the photoconductive switches, an novel lab model of ultra-wide band(UWB) radar is also developed. The experimental results are given to show the performances of the switches and the UWB radar. 相似文献
12.
13.
14.
Carrier and field dynamics in photoconductive switches are investigated by electrooptic sampling and voltage-dependent reflectivity measurements. We show that the nonuniform field distribution due to the two-dimensional nature of coplanar photoconductive switches, in combination with the large difference in the mobilities of holes and electrons, determine the pronounced polarity dependence. Our measurements indicate that the pulse generation mechanism is a rapid voltage breakdown across the photoconductive switch and not a local field breakdown 相似文献
15.
Traditional methods of ultra-wideband (UWB) radar signal generation suffer from several disadvantages such as low antenna radiation efficiency and lack of accurate control of signal parameters like pulse shape, pulse repetition interval (PRI), and its spectrum. UWB signals can be generated by expanding the desired radar waveform in a Fourier series and then synthesizing the waveform by generating the individual terms in the expansion from harmonically related oscillators. Signals thus produced overcome the disadvantages of traditional methods of UWB signal generation. Fourier series based method for generation of complex amplitude coded waveforms is developed which can be used to generate time domain equivalent of Barker and other codes for application in radar and communication areas. In radar applications, these coded waveforms, with accurate and stable waveform parameters, shall allow pulse compression and coherent integration. The additional processing gain provided by these operations reduces the need for high peak power in radar transmitters which is one of the bottlenecks in the implementation of operational UWB radars. This paper also describes a UWB radar concept which incorporates Fourier synthesized waveforms. Related digital signal processing issues are also discussed 相似文献
16.
17.
Measurements of the wavelength, signal frequency, and position sensitivities of GaAs field effect transistors used as photoconductive detectors are presented. Switching of the optical sensitivity by means of both the drain and gate voltages are demonstrated. The former method can provide the basis for employing such photoconductive detectors as optoelectronic wide-band switches. The observed properties of the field effect transistor (FET) devices studied shows that the design of photoconductive optoelectronic switches will involve compromises between sensitivity and isolation in choosing the operating wavelength, and among frequency response, power consumption, and physical size in choosing the physical layout of the device. 相似文献
18.
本文对利用超短激光脉冲触发半导体光导开关产生超短电磁脉冲的装置、器件、材料以及应用方面的研究状况进行了介绍。 相似文献
19.
《Geoscience and Remote Sensing, IEEE Transactions on》2009,47(4):1179-1186