Band-gap modulation in single-crystalline Si1-xGex nanowires

We report the energy band-gap modulation of single-crystalline Si1-xGex (0 相似文献   

Tuning the surface charge properties of epitaxial InN nanowires

We have investigated the correlated surface electronic and optical properties of [0001]-oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the epitaxial growth process, we have achieved, for the first time, intrinsic InN both within the bulk and at nonpolar InN surfaces. The near-surface Fermi-level was measured to be ～0.55 eV above the valence band maximum for undoped InN nanowires, suggesting the absence of surface electron accumulation and Fermi-level pinning. This result is in direct contrast to the problematic degenerate two-dimensional electron gas universally observed on grown surfaces of n-type degenerate InN. We have further demonstrated that the surface charge properties of InN nanowires, including the formation of two-dimensional electron gas and the optical emission characteristics can be precisely tuned through controlled n-type doping. At relatively high doping levels in this study, the near-surface Fermi-level was found to be pinned at ～0.95-1.3 eV above the valence band maximum. Through these trends, well captured by the effective mass and ab initio materials modeling, we have unambiguously identified the definitive role of surface doping in tuning the surface charge properties of InN.     

Carrier-induced dynamic strain effects in semiconductor nanocrystals

In this paper, we reveal, for the first time, the basic nature of electron–phonon interaction in semiconductor nanocrystals. On the basis of the experimental results on GaAs, GaP, Si nanocrystals, and porous silicon, we further prove that the carrier-induced dynamic strain effect (CIDSE) is a common feature in solids, which plays an extremely important role on the electronic and optical properties of semiconductor nanocrystals. The optical transitions in semiconductor nanocrystals are dominated by multiphonon-assisted electronic transition processes. Nanocrystals with direct-gap and a large pressure coefficient for the band gap (as GaAs) no longer show band-edge emission due to the intrinsic strong electron – long wavelength anharmonic acoustic phonon coupling. Nanocrystals with an indirect-gap show a carrier-induced dynamic Jahn–Teller effect and two fairly strong intrinsic emission bands. Most of the open questions in the semiconductor nanocrystal field, including porous silicon, can be consistently explained by the carrier-induced dynamic strained quantum dot model. © 1998 Kluwer Academic Publishers     

Vertically standing Ge nanowires on GaAs(110) substrates

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380?°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.     

Microstructural evolution of oxides and semiconductor thin films

This review article introduces the preparation methodologies and the microstructural characteristics of semiconductor thin films, including SnO₂ thin films, Au/Ge bilayer films, and Pd-Ge alloy thin films, and metal oxides, including SnO, SnO₂, Mn₂O₃ and Mn₃O₄ nanocrystals which can be in the form of nanoparticles, nanowires, nanorods, and nanofractals. Firstly, the preparation methodologies and the microstructural characteristics of tin oxides have been investigated in detail and described in Section 2. Secondly, the crystallization of amorphous Ge, and the formation of nanocrystals and compounds developed with improved micro- and nanostructured features are described in Section 3. Thirdly, a novel selective synthesis route for various morphologies of manganese oxides nanocrystals, including nanoparticles, nanorods and nanofractals, and their unique microstructural characteristics are presented in Section 4. Intricate fundamental properties of manganese oxides nanocrystals are studied in detail. To sum up, it is expected that the fabrication methodologies developed and the knowledge of microstructural evolution gained in semiconductor thin films, including SnO₂ thin films, Au/Ge bilayer films, and Pd-Ge alloy thin films, and metal oxides, including SnO, SnO₂, Mn₂O₃ and Mn₃O₄ nanocrystals in the forms of nanoparticles, nanowires, nanorods, and nanofractals, will provide an important fundamental basis underpinning further interdisciplinary (physics, chemistry and materials science) research in this field leading to promising exciting opportunities for future technological applications involving these oxide and thin film materials.     

Defect transfer from nanoparticles to nanowires

Metal-seeded growth of one-dimensional (1D) semiconductor nanostructures is still a very active field of research, despite the huge progress which has been made in understanding this fundamental phenomenon. Liquid growth promoters allow control of the aspect ratio, diameter, and structure of 1D crystals via external parameters, such as precursor feedstock, temperature, and operating pressure. However the transfer of crystallographic information from a catalytic nanoparticle seed to a growing nanowire has not been described in the literature. Here we define the theoretical requirements for transferring defects from nanoparticle seeds to growing semiconductor nanowires and describe why Ag nanoparticles are ideal candidates for this purpose. We detail in this paper the influence of solid Ag growth seeds on the crystal quality of Ge nanowires, synthesized using a supercritical fluid growth process. Significantly, under certain reaction conditions {111} stacking faults in the Ag seeds can be directly transferred to a high percentage of <112>-oriented Ge nanowires, in the form of radial twins in the semiconductor crystals. Defect transfer from nanoparticles to nanowires could open up the possibility of engineering 1D nanostructures with new and tunable physical properties and morphologies.     

Formation of ge nanocrystals in SiO2 by electron beam evaporation

Ge nanocrystals were formed by electron beam evaporation on SiO2 covered Si substrates. The size and distribution of the nanocrystals were studied by atomic force microscopy, scanning electron microscopy and cross-sectional transmission electron microscopy. Dependencies of the nanocrystal size, of the nanocrystal surface coverage, and sheet resistance obtained by van der Pauw method of the Ge layer have been found on the evaporation time. The suggested growth mechanism for the formation of nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.     

Facile Synthesis of pH‐sensitive Germanium Nanocrystals with High Quantum Yield for Intracellular Acidic Compartment Imaging

A green‐light emitting germanium nanocrystal‐based biosensor to monitor lysosomal pH changes is developed. The Ge nanocrystals are synthesized in an aqueous solution with a significantly enhanced photoluminescence quantum yield of 26%. This synthesis involves a facile solution based route which avoided the use of toxic or environmentally unfriendly agents. Importantly, the photoluminescence intensity of the synthesized Ge nanocrystals is particularly sensitive to changes in pH between 5 and 6. When incubated with cultured cells, the nanocrystals are internalized and subsequently translocated via the lysosomal pathway, and the Ge nanocrystals' fluorescence are greatly enhanced, even when the lysosomal pH is only slightly increased. These results reveal that the Ge nanocrystals possess high pH sensitivity compared to a commercially available dye, LysoSensor Green DND‐189. The fluorescent properties of the Ge nanocrystals are demonstrated to be dependent on both the crystal form and their surface chemistry. The superior fluorescence properties and bioapplicability of the Ge nanocrystals makes them a promising intracellular bioimaging probe for monitoring various pH‐sensitive processes in cells.     

Nanorod heterostructures showing photoinduced charge separation

Size- and shape-dependent property modifications of semiconductor nanocrystals have been a subject of intense interest because of their potential for future engineering devices. The bandgap and related optical-property tuning of these materials are mainly governed by the nature of their band edges. In addition, fusing one type of nanocrystal over another enables further control of material properties that are dependent on the relative alignments of their energy levels. On a molecular scale, the synthesis of supramolecular compounds has inspired advances in theories for photoinduced charge transfer. Heterostructured nanocrystals potentially provide a nanoscale analog of such systems. A method for preparing heterostructured nanocrystals of complex morphologies showing photoinduced charge separation is presented. It is shown that the energy and lifetime of the charge-transfer photoluminescence band can be tuned by changing the relative alignment of band edges in CdSe/CdTe heterostructure nanorods. The long-lived charge transfer states in these type II semiconductors may make them attractive for photovoltaic applications.     

Putting nanocrystals to work: from solutions to devices

The colloidal route to semiconductor nanocrystals is extremely flexible, with a high degree of control over size, size distribution, surface passivation and internal structure of the nanoparticles. Simple chemically controlled techniques can be used to assemble these particles into dense films or other microscopic structures, suitable for photonic devices. Working with semiconductors or semi-metals which in the bulk form have low or inverted bandgaps, and taking advantage of the blue shift in the quantum confinement regime, nanocrystals can readily be tuned to the infrared wavelengths of interest for telecommunications. Design flexibility is far greater than with conventional compound semiconductors or rare-earth-doped glasses. Preliminary results demonstrating optical gain from II-VI nanocrystal films at room temperature are reported.     

Understanding the Photothermal Conversion Efficiency of Gold Nanocrystals

Plasmon‐based photothermal therapy is one of the most intriguing applications of noble metal nanostructures. The photothermal conversion efficiency is an essential parameter in practically realizing this application. The effects of the plasmon resonance wavelength, particle volume, shell coating, and assembly on the photothermal conversion efficiencies of Au nanocrystals are systematically studied by directly measuring the temperature of Au nanocrystal solutions with a thermocouple and analyzed on the basis of energy balance. The temperature of Au nanocrystal solutions reaches the maximum at ～75°C when the plasmon resonance wavelength of Au nanocrystals is equal to the illumination laser wavelength. For Au nanocrystals with similar shapes, the larger the nanocrystal, the smaller the photothermal conversion efficiency becomes. The photothermal conversion can also be controlled by shell coating and assembly through the change in the plasmon resonance energy of Au nanocrystals. Moreover, coating Au nanocrystals with semiconductor materials that have band gap energies smaller than the illumination laser energy can improve the photothermal conversion efficiency owing to the presence of an additional light absorption channel.     

Growth and characterization of germanium nanowires by electron beam evaporation

Germanium nanowires were grown on Au coated Si substrates at 380 °C in a high vacuum (5 × 10^− 5 Torr) by e-beam evaporation of Germanium (Ge). The morphology observation by a field emission scanning electron microscope (FESEM) shows that the grown nanowires are randomly oriented with an average length and diameter of 600 nm and 120 nm respectively for a deposition time of 60 min. The nanowire growth rate was measured to be ∼ 10 nm/min. Transmission electron microscope (TEM) studies revealed that the Ge nanowires were single crystalline in nature and further energy dispersive X-ray analysis (EDAX) has shown that the tip of the grown nanowires was capped with Au nanoparticles, this shows that the growth of the Ge nanowires occurs by the vapour liquid solid (VLS) mechanism. HRTEM studies on the grown Ge nanowire show that they are single crystalline in nature and the growth direction was identified to be along [110].     

Carrier multiplication in semiconductor nanocrystals: theoretical screening of candidate materials based on band-structure effects

Direct carrier multiplication (DCM) occurs when a highly excited electron-hole pair decays by transferring its excess energy to the electrons rather than to the lattice, possibly exciting additional electron-hole pairs. Atomistic electronic structure calculations have shown that DCM can be induced by electron-hole Coulomb interactions, in an impact-ionization-like process whose rate is proportional to the density of biexciton states rho XX. Here we introduce a DCM "figure of merit" R2(E) which is proportional to the ratio between the biexciton density of states rhoXX and the single-exciton density of states rhoX, restricted to single-exciton and biexciton states that are coupled by Coulomb interactions. Using R2(E), we consider GaAs, InAs, InP, GaSb, InSb, CdSe, Ge, Si, and PbSe nanocrystals of different sizes. Although DCM can be affected by both quantum-confinement effects (reflecting the underly electronic structure of the confined dot-interior states) and surface effects, here we are interested to isolate the former. To this end the nanocrystal energy levels are obtained from the corresponding bulk band structure via the truncated crystal approximation. We find that PbSe, Si, GaAs, CdSe, and InP nanocrystals have larger DCM figure of merit than the other nanocrystals. Our calculations suggest that high DCM efficiency requires high degeneracy of the corresponding bulk band-edge states. Interestingly, by considering band structure effects we find that as the dot size increases the DCM critical energy E0 (the energy at which R2(E) becomes >or=1) is reduced, suggesting improved DCM. However, whether the normalized E0/epsilong increases or decreases as the dot size increases depends on dot material.     

Atomic and electronic properties of realizable size single-crystal GaN nanotubes by first principles

We studied the diameter and wall thickness dependent atomic and electronic properties of practical size single-crystal GaN nanotubes using first principle calculations. Single-crystal GaN nanotubes are similar to the hexagonal GaN nanowires, grown in the [0001] direction with [10-10] facets, except there is an axial hexagonal void in them. We first demonstrated that the atomic and electronic properties of these tubes are mainly determined by the thickness of their wurtzite walls; and their diameters have negligible effects. Then, considering the individual walls of GaN nanotubes in two-dimensional slab calculations we examine the bond distances, formation energy, band gap, effective electron mass and the evolution of electronic density of the states as a function of thickness for unsaturated and hydrogen-saturated slabs of GaN. Calculations revealed that the unsaturated dangling bonds at the surfaces induce defect states in the band gap region of unsaturated tubes. Therefore, regardless of diameter and wall thickness, their band gaps are always smaller than that of the bulk GaN. However, the band gaps of the hydrogen-saturated tubes are found to be amplified with respect to bulk GaN. The amplification in the band gaps as a function of wall thickness in the range of 5.6-16.9 A and 16.9-28.1 A scales with a factor of 1/d(0.9281) and 1/d(1.769), respectively. Our results show that, regardless of diameter, hydrogen saturated single-crystal GaN tubes with the wall thickness as small as 28.1 A would be stable and they would have a noticeably larger band gap with respect to the band gap of bulk GaN.     

First-principles studies of the electronic and mechanical properties of ZnO nanobelts with different dominant surfaces

The electronic and elastic properties of [0001] ZnO nanobelts with different lateral dimensions have been studied by employing first-principles approaches. We find that the surface effects are dominant for the energetic stability of the nanobelt, while the quantum confinement effect plays an important role in the band gaps of the nanobelts. More importantly, we show that the different dominant surfaces of nanobelts have important influences on the band gaps, but minimal effects on the size dependence of the Young's modulus. The Young's modulus is larger than the bulk value and decreases with the increase of the square root of the cross-sectional area of the nanobelts. Finally, we find that the continuum-based model proposed for the Young's modulus of nanostructures is applicable for ZnO nanowires of 10-200?nm diameter, but not for ultrathin nanowires and nanobelts.     

(001)面双轴应变锗材料的能带调控

本文基于形变势理论构建(001)面双轴应变Ge材料的能带结构模型。计算结果表明(001)面双轴应变可以将Ge的能带从以L能谷为导带底的间接带半导体调控到以Δ4能谷为导带底的间接带半导体或者以Г能谷为导带底的直接带半导体。同时室温下Ge的带隙与应变的关系可用四段函数来表示:当压应变将Ge材料调控为以Г能谷为导带底的间接带半导体后,每增加1%的压应变,禁带宽度将线性减小约78.63meV;当张应变将Ge材料调控为直接带半导体后,张应变每增加1%,禁带宽度将线性减小约177.98meV;应变介于-2.06%和1.77%时,Ge将被调控为以L能谷为导带底的间接带半导体,禁带宽度随着压应变每增加1%而增加11.66meV,随着张应变每增加1%而线性减小约88.29meV。该量化结果可为研究和设计双轴应变Ge材料及其器件提供理论指导和实验依据。     

Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals

Crystalline silicon is the most important semiconductor material in the electronics industry. However, silicon has poor optical properties because of its indirect bandgap, which prevents the efficient emission and absorption of light. The energy structure of silicon can be manipulated through quantum confinement effects, and the excitonic emission from silicon nanocrystals increases in intensity and shifts to shorter wavelengths (a blueshift) as the size of the nanocrystals is reduced. Here we report experimental evidence for a short-lived visible band in the photoluminescence spectrum of silicon nanocrystals that increases in intensity and shifts to longer wavelengths (a redshift) with smaller nanocrystal sizes. This higher intensity indicates an increased quantum efficiency, which for 2.5-nm-diameter nanocrystals is enhanced by three orders of magnitude compared to bulk silicon. We assign this band to the radiative recombination of non-equilibrium electron-hole pairs in a process that does not involve phonons.     

Shape effect on electronic and photovoltaic properties of CdS nanocrystals

Changes in electronic and photovoltaic properties of semiconductor nanocrystals predominantly due to changes in shape are discussed here. Cadmium sulfide (CdS) semiconductor nanocrystals of various shapes (tetrapod, tetrahedron, sphere and rod) obtained using an optimized solvothermal process exhibited a mixed cubic (zinc blende) and hexagonal (wurtzite) crystal structure. The simultaneous presence of the two crystal phases in varying amounts is observed to play a pivotal role in determining both the electronic and photovoltaic properties of the CdS nanocrystals. Light to electrical energy conversion efficiencies (measured in two-electrode configuration laboratory solar cells) remarkably decreased by one order in magnitude from tetrapod --> tetrahedron --> sphere --> rod. The tetrapod-CdS nanocrystals, which displayed the highest light to electrical energy conversion efficiency, showed a favorable shift in position of the conduction band edge leading to highest rate of electron injection (from CdS nanocrystal to the wide band gap semiconductor viz. titanium dioxide, TiO2) and lowest rate of electron-hole recombination (higher free electron lifetimes).     

Time-resolved photoluminescence spectroscopy of ligand-capped PbS nanocrystals

PbS nanocrystals are synthesized using colloidal techniques and have their surfaces capped with oleic acid. The absorption band edge of the PbS nanocrystals is tuned between 900 and 580?nm. The PbS nanocrystals exhibit tuneable photoluminescence with large non-resonant Stokes shifts of up to 500?meV. The magnitude of the Stokes shift is found to be dependent upon the size of PbS nanocrystals. Time-resolved photoluminescence spectroscopy of the PbS nanocrystals reveals that the photoluminescence has an extraordinarily long lifetime of 1?μs. This long fluorescence lifetime is attributed to the effect of dielectric screening similar to that observed in other IV-VI semiconductor nanocrystals.