A fast 3D modeling approach to electrical parameters extraction ofbonding wires for RF circuits

Bonding wires are extensively used in integrated circuit (IC) packaging and circuit design in RF applications. An approach to fast three-dimensional (3D) modeling of the geometry for bonding wires in RF circuits and packages is demonstrated. The geometry can readily be used to extract electrical parameters such as inductance and capacitance. An equivalent circuit is presented to model the frequency response of bonding wires. To verify simulation accuracy, test structures have been made and measured. Excellent agreement between simulated and measured data is achieved for frequencies up to 10 GHz. The model is well suited for the design and analysis of circuits for cellular phone communication (i.e., order 2 GHz) and future wireless communication (i.e., order 5 GHz)     

GaAs数字单片电路的计算机模拟

本文在开发并确立通用电路分析程序SPICE3A7的GaAs MESFET模型及相应模型参数提取方法的基础上,对GaAs MESFET器件及相关BFL.单元电路进行了直流和瞬态的计算机模拟和部分优化,取得了较好结果;并对研制中的分频器电路设计进行了计算机研究.     

Low-Temperature Bonding of Laser Diode Chips on Silicon Substrates Using Plasma Activation of Au Films

A low-temperature bonding of vertical-cavity surface-emitting laser (VCSEL) chips on Si substrates was achieved by using plasma activation of Au films. After the surfaces of Au films were cleaned using an Ar radio frequency plasma, bonding was carried out by contact in ambient air with applied static pressure. The experimental results showed that surface morphological change (the reduction of asperity width) as well as removal of adsorbed organic contaminants by plasma treatment significantly improved the quality of joints. At a bonding temperature of 100degC, the die-shear strength exceeded the failure criteria of MIL-STD-883.     

A complete small-signal equivalent circuit model of cooled butterfly-type 2.5 Gbps DFB laser modules and its application to improve high frequency characteristics

A small-signal equivalent circuit model of 2.5 Gbps DFB laser modules with butterfly-type dual-in-line packages has been proposed and verified using extracted parameters. Parameters related to the equivalent circuit have been extracted from measured S parameters using the modified two-port black box model. This model includes small-signal equivalent circuits of components used for 2.5 Gbps DFB laser modules such as DFB laser, coplanar waveguides, matching resistor, bonding wires, and thermoelectric cooler (TEC). From this equivalent circuit modeling, we show that calculated frequency characteristics of DFB lasers on submount and complete DFB laser modules are similar to their measured frequency characteristics, respectively. Based on this equivalent circuit model, we propose and demonstrate a method that can improve frequency characteristics of 2.5 Gbps DFB laser modules through both experiments and simulations.     

The characteristics of electrically short, umbrella top-loaded antennas

Experimental measurements of the electrical characteristics of umbrella top-loaded, electrically short antennas have been performed. Electrically short antennas can be represented by a series RLC circuit with good accuracy up to and including their first series resonant frequency. Electrically short antennas generally have very high Q's and, consequently, narrow bandwidths. Top-loading, such as umbrella top-loading of electrically short monopole antennas, leads to antennas which have lower Q's and larger bandwidths. The experimental measurements were made using a scale model facility. The antennas measured on the scale model facility were one-hundredth scale models of the anticipated full scale antennas. The equivalent inductance, capacitance, resistance, and effective height of these scale model antennas were determined and compared with values of static capacitance, static effective height, and static resistance obtained from a computer calculation [1], [2] and good correlation was obtained. Additionally, the dynamic characteristics of the antennas were determined from the model studies. The dynamic parameters determined were the antenna inductance, the dynamic radiation resistance, and the dynamic effective height. The measured data obtained from the model study are summarized in graphs and tables and compared with other reported experimental results as well as with computer calculations. Nomograms summarizing the computed data have been constructed and are presented.     

Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization

The objective of this study is to optimize the Cu/Sn solid–liquid interdiffusion process for wafer-level bonding applications. To optimize the temperature profile of the bonding process, the formation of intermetallic compounds (IMCs) which takes place during the bonding process needs to be well understood and characterized. In this study, a simulation model for the development of IMCs and the unreacted remaining Sn thickness as a function of the bonding temperature profile was developed. With this accurate simulation model, we are able to predict the parameters which are critical for bonding process optimization. The initial characterization focuses on a kinetics model of the Cu₃Sn thickness growth and the amount of Sn thickness that reacts with Cu to form IMCs. As-plated Cu/Sn samples were annealed using different temperatures (150°C to 300°C) and durations (0 min to 320 min). The kinetics model is then extracted from the measured thickness of IMCs of the annealed samples.     

Dynamics of Ultrasonic Transducer System for Thermosonic Flip Chip Bonding

Thermosonic flip chip bonding is used in certain fine pitch IC packaging for its unique features. By using this bonding process in this paper, 1 mm$, times ,$1 mm chip with 8 gold bumps has been bonded onto a silver-coated substrate. Dynamical properties of transducer system, which is the key component for providing the ultrasonic energy, have been investigated using finite element model (FEM) and measurement using impedance analyzer and laser doppler vibrometer (LDV). The simulation results show that the ultrasonic transducer vibrates by coupling with all excited modes, therefore resulting in complicated motions during bonding. The third axial mode, which includes 1.5 wavelengths and 3 nodes, is the dominant working vibration. However, this axial mode is severely disturbed by undesirable non-axial modes such as flexural modes. There are some other unwanted parasitic modes close to dominant mode. Measured velocities of the transducer horn show that the system vibrates under several modes simultaneously. The impedance measurements reveal additional frequencies overlapping the working frequency. All non-axial modes of the ultrasonic transducer disturb the bonding process and degrade the bonding quality. A subtle control is needed to obtain unique axial mode and stable vibration for high bonding quality.      

Automatic tracking of muscle fascicles in ultrasound images using localized Radon transform

Ultrasound images of muscle fascicles have been widely used to investigate muscle properties under static/dynamic and pathologic conditions. Fascicle images are usually detected and measured manually, which is subjective and time consuming, especially when dealing with large number of images. In this study, an automatic linear extraction method based on localized Radon transform and revoting strategy is proposed to detect and track muscle fascicles in ultrasound images. The performance of the proposed method is compared to another automatic linear feature extraction method of revoting Hough transform using both simulated images generated by Field II and clinical images from two human subjects. The proposed tracking method is further validated using experimental data. Both the simulation and experimental results show that the proposed method is robust in the presence of speckle noise, accurate in terms of orientation and position measurement, and feasible for analyzing clinical data.     

A compact nonlinear equivalent circuit model and parameter extraction method for packaged high-speed VCSELs

A compact nonlinear circuit model for the input of packaged high-speed vertical-cavity surface-emitting lasers (VCSELs) is presented in this paper. The model includes the thermal effects as well as the parasitics, due to the various levels of the packaging hierarchy, to ensure a realistic representation of the input of the VCSELs. The values of the model parameters are extracted from dc current-light-voltage characteristics and S/sub 11/ vector measurements using a two-step parameter extraction procedure. Extraction of the model parameters and comparison between measured and simulated results have been performed for two different commercially available VCSELs operating at 2.5 Gb/s. The achieved agreement between the measured and simulated results is very satisfactory for the dc as well for the S/sub 11/ curves in the frequency range from 3 MHz to 3 GHz.     

多芯片组件中金丝金带键合互连的特性比较

金丝、金带键合已经广泛应用于毫米波多芯片组件的互连之中。本文讨论了在20－40GHz 频率范围内,单根、两根、三根金丝和金带连接的性能。测试结果表明两根和三根金丝连接的性能优于金带连接的性能,金带连接的性能优于单金丝连接的性能。     

功率型LED封装中的热阻分析

芯片固晶过程是影响功率型LED封装热阻的重要方面.分析了银胶、共晶合金等不同导热率的固晶材料产生的固晶热阻的大小,并基于正向电压测结温法首次提出了一种测量LED固晶热阻的方法,得到了很好的测量结果,能有效分析封装结构中各部分引入的热阻的大小.

Abstract：

The LED chip bonding is an essential technology to reduce the thermal resistance of LED. Thermal performance of bonding materials such as Ag-epoxy resin was analyzed using heat transfer tools. For the sake of assessing the bonding technology, a method of measuring the thermal resistance induced by bonding process was proposed for the first time based on the forward working voltage method. It is shown that the theoretical simulation results agreed well with the measured results.     

Imaging electrical impedance from acoustic measurements by means of magnetoacoustic tomography with magnetic induction (MAT-MI)

We have conducted computer simulation and experimental studies on magnetoacoustic-tomography with magnetic induction (MAT-MI) for electrical impedance imaging. In MAT-MI, the object to be imaged is placed in a static magnetic field, while pulsed magnetic stimulation is applied in order to induce eddy current in the object. In the static magnetic field, the Lorentz force acts upon the eddy current and causes acoustic vibrations in the object. The propagated acoustic wave is then measured around the object to reconstruct the electrical impedance distribution. In the present simulation study, a two-layer spherical model is used. Parameters of the model such as sample size, conductivity values, strength of the static and pulsed magnetic field, are set to simulate features of biological tissue samples and feasible experimental constraints. In the forward simulation, the electrical potential and current density are solved using Poisson's equation, and the acoustic pressure is calculated as the forward solution. The electrical impedance distribution is then reconstructed from the simulated pressure distribution surrounding the sample. The present computer simulation results suggest that MAT-MI can reconstruct conductivity images of biological tissue with high spatial resolution and high contrast. The feasibility of MAT-MI in providing high spatial resolution images containing impedance-related information has also been demonstrated in a phantom experiment.     

A large-signal physical MESFET model for computer-aided design andits applications

A quasi-static, large-signal MESFET circuit model is presented. It is based on a comprehensive quasi-two-dimensional, semiclassical, physical device simulation, and its unique formulation and efficiency make it suitable for the computer-aided design of nonlinear MESFET subsystems. Using this approach the semiconductor equations are reduced to a consistent one-dimensional approximation requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. A single/two-tone harmonic balance analysis procedure which uses the describing frequency concept is also developed and combined with the MESFET model. Numerical load-pull contours as well as intermodulation distortion contours have been simulated; their comparison with measured results validates the approach taken     

Experiences on reliability simulation in the framework of the PROPHECY project

Electromigration and oxide time dependent dielectric breakdown simulations based on library elements of a 0.35 μm CMOS technology have been performed. In the case of hot carrier degradation simulations as well as experiments using 99-stage ring oscillators of the same 0.35 μm CMOS technology have been carried out and compared. The frequency behaviour as a function of supply voltage and temperature has been investigated. Relaxation effects on the ring oscillators have been found. These effects are not covered by the reliability simulation tool. In a certain region of supply voltage and operation time the results of simulations could be confirmed by experiments. In all other cases the measured frequency degradation was smaller than the simulated degradation.     

毫米波微带键合金丝互连模型的研究

本文应用神经网络方法、采用FDTD全波分析结果作为训练样本得到了毫米波微带键合金丝互连的参数模型.这个神经网络模型可以指导毫米波集成电路的设计,利用该模型可以得到不同拱高、微带间隙和频率时的电路散射参数.实验测试了键合金丝互连的散射参量并与神经网络模型的结果进行了比较分析.     

高速双模前置分频器的速度优化设计

给出了一种新的高速动态有比cMOS D触发器的设计.在分析64/65双模前置分频器工作原理的基础上,提出了提高其工作速度的方法,运用单相时钟(TSPC)动态CMOS、伪NMOS等电路技术,设计了多种内部电路结构.经HSPICE模拟,在0.8μmCMOS工艺、电源电压为5V的条件下,最高时钟频率达到了1.7GHz,其速度和集成度远远超过静态CMOS电路.     

High-density static ESFI MOS memory cells

The area of static MOS memory cells is reduced by avoiding crossovers in the flip-flop, and by selecting the cell by a diode. Such cells have been realized in epitaxial silicon films on insulators (ESFI) with complementary transistors, diodes, and high-rated load resistors; the cell areas can be as small as 1500 /spl mu/m/SUP 2/ (2.4 mil/SUP 2/), and are the smallest areas of static MOS memory cells known so far. The static and dynamic behavior of these cells are discussed, as well as their behavior in a large-scale integrated (LSI) circuit; for this purpose an exploratory memory with 4096 bits and with simple decoding and sensing circuitry has been realized on an area of 3.5/spl times/4.2 mm (140/spl times/170 mils). Taking into account the measured data, an ESFI MOS memory circuit shows a better performance in speed and power dissipation than dynamic MOS memories, but its principal advantage is the static operation mode.     

An analytical maximum toggle frequency expression and itsapplication to optimizing high-speed ECL frequency dividers

A novel method is used to analyze static and regenerative frequency dividers by relating their performance to that of the constituent EXCLUSIVE-OR (XOR) gates. It is found that the behavior of the propagation delay of XOR gates is quite linear, and this allows the derivation of a propagation delay expression for XOR gates using a sensitivity analysis. The validity of the expression is checked by comparison with SPICE simulations and with results from the literature, and agreement to 10% is obtained. It has been found that this expression can be used to accurately predict the maximum toggle frequency of frequency dividers. Using this expression, it has also been verified that the maximum toggle frequency of regenerative frequency dividers is about twice as high as that of static frequency dividers. In order to optimize frequency dividers, figures of merit for frequency dividers realized in silicon and AlGaAs-GaAs technologies are proposed     

A PCB-compatible 3-dB coupler using microstrip-to-CPW via-hole transitions

A 3-dB coupler by implementing microstrip-to-coplanar waveguide (CPW) via-hole transitions is proposed. The proposed coupler, with the advantages of wider coupled line widths and spacing without using any bonding wires, can eliminate the uncertain factors of conventional Lange couplers caused by the printed circuit board (PCB) manufacturing processes. The proposed coupler can be easily fabricated on a single-layer PCB substrate instead of using multilayer substrates. Good agreements between the simulation and the measurement in the frequency range from 0.45 to 5 GHz can be achieved. The measured results at the center frequency of 2.4 GHz have the return loss better than -15dB; the insertion loss of coupled and direct ports is about 3/spl plusmn/ 0.2dB and the relative phase difference of 89/spl plusmn/0.3/spl deg/. The dimension of the coupler is 3.1cm /spl times/ 1.8cm.     

Static frequency chirping in λ/4-phase-shifteddistributed-feedback semiconductor lasers: influence of carrier-densitynonuniformity due to spatial hole burning

An experimental and theoretical study of the effect of carrier-density nonuniformity on frequency modulation (FM) characteristics of 1.3-μm λ/4-phase-shifted distributed-feedback (DFB) lasers is discussed. The static frequency chirping is measured using a recently developed method that is free from dynamical chirping as well as thermal frequency shift. The amount of chirping shows a strong dependence on the bias current level. This is explained theoretically by considering the nonuniform carrier-density distribution due to the spatial hole burning effect