离子束溅射淀积光学薄膜的膜厚均匀性实验

介绍了离子束溅射技术改善薄膜均匀性的两种方法。研究了修正板技术,根据工程需要将修正板技术应用于行星转动条件下的光学薄膜的均匀性修正。分别研究了靶摆动和不摆动的情况下,淀积薄膜的均匀性修正。实验结果表明,修正后的均匀性结果优于 1%,能满足实际应用的要求;靶摆动修正的均匀性结果优于修正板技术。     

用EA-CVD方法制备的大尺寸金刚石厚膜的品质和膜厚均匀性的研究

根据金刚石厚膜的实际应用要求,建立了EA-CVD(E lectron Assisted Chem ical Vapor Deposition)方法,制备出直径为80mm,膜厚为1mm以上的大尺寸高品质的均匀金刚石厚膜,其膜厚不均匀性小于5%,热导率不均匀性小于10%,膜片中部和边缘磨耗比基本相同,大约在1.5×105左右。同时研究了制备参数对膜的品质和膜厚均匀性的影响。结果表明:甲烷浓度、工作气压、偏流、灯丝与基片间距等参数对金刚石厚膜的品质和膜厚均匀性都产生影响。辉光等离子体的状态对膜的均匀生长作用明显,较低的工作气压,较大的偏流和较大的灯丝与基片间距有利于气体分解和辉光等离子体的发散,从而导致大面积金刚石厚膜不同位置的品质和膜厚趋于均匀。     

离子束溅射铜钨薄膜的结构

为了进一步探讨离子束溅射铜钨薄膜的结构,在铁片上离子束溅射铜钨薄膜,研究了轰击离子束能量及低能辅助轰击方式对薄膜相结构和厚度的影响.结果表明:随轰击铜靶离子束能量增加,钨由近似非晶亚稳态转变成晶态;由于溅射粒子落到基片前的反射效应,薄膜中间比边缘薄,且随轰击铜靶离子束能量增加,薄膜变薄到一定程度时开始增厚;当使用低能辅...     

离轴三反空间相机的畸变测量

离轴三反光学系统的畸变是空间相机的重要指标之一,离轴三反空间相机在完成光学系统装调及光学镜头装配后需要进行畸变测量。本文详细介绍采用精密测角法对离轴三反空间相机进行畸变测量,并以某离轴三反空间相机为例论述畸变测量方法及步骤,计算结果满足5‰的光学系统要求,证实了该测量方法的可行性。     

利用离焦光斑的离轴望远镜失调校正方法研究

离轴反射式望远镜主要应用于空间天文观测等领域。离轴两反望远镜的成像质量对镜片的失调敏感,且在工作环境下失调后使用激光干涉仪进行校准较为困难。针对这一难题,本文提出了一种利用系统对无穷远点目标的离焦光斑图并使用Swin-Transformer网络计算次镜横向失调量的方法。通过理论计算分析,可以避免多解问题的相机离焦位置,并利用仿真探究了不同离焦量对校正精度的影响,最后搭建实验平台进行验证,训练好的网络使用失调系统的一帧离焦光斑图便可进行失调量的估计。仿真分析与实验结果均验证了该方法的有效性,可实现工作环境中失调望远镜系统的高精度和快速校正。     

离轴非球面的条纹反射检测技术

条纹反射测量技术具有动态范围大、灵敏度高的特点,通过高精度的系统标定可以获得很高的测量精度。本文研究将条纹反射测量技术应用于离轴非球面反射镜粗抛光阶段的面形检测,使用激光跟踪仪建立检测系统坐标系,然后将相机和显示屏的实测标定数据代入坐标系并在Zemax软件中建立测量装置的理想模型,通过光线追迹得到理想的屏幕像素点位置,采用相移技术可以得到实测时屏幕像素点位置,从而计算得到被测镜面形的斜率误差,最后积分得到检测结果。文中采用该方法对一块SiC离轴非球面镜进行了实测,并与三坐标测量机的结果进行对比,验证了方法的可行性,可用于指导离轴非球面镜粗抛光阶段的加工。     

基于大气散射延时的激光离轴检测方法

文章基于激光的传输和散射物理特性,建立了激光信号探测的二维解析模型,得到了在不同探测角度条件下的散射场能量,导出了后向散射光的到达延迟时间与探测角度和离轴距离关系的理论公式.在近轴、远距离传输情况下的离轴距离与延迟时间成简单的线性关系.延迟时间虽然取值很小,但大于脉冲宽度,提出了采用精确测量接收信号的延迟时间来实现二维空间中激光束离轴定位的方法.     

相移掩模和离轴照明在ArF浸没式光刻中对工艺窗口的影响

研究了交替型相移掩模及离轴照明对65nm分辨率ArF浸没式光刻的影响,在3／4环形照明和3／4四极照明方式下,分别选用传统掩模和交替型相移掩模,研究65nm线宽的密集线条、半密集线条、孤立线条在较大的曝光系统参数范围内,对光刻工艺窗口的改善。并对在不同的照明方式、掩模结构下获得的工艺窗口进行了比较,结果表明：①在较大焦深(DOF)范围内,满足光刻性能要求可以有较大范围的曝光系统参数配置;②相时于传统照明和传统掩模,采用交替型相移掩模或者离轴照明,焦深均可提高100％-150％。     

刀具对中误差对离轴抛物面镜慢刀伺服车削加工的影响

离轴抛物面镜单件高效加工是离轴三反消像散(TMA)结构光学系统的技术难点之一.单点金刚石慢刀伺服车削加工技术可用于离轴非球面加工,加工尺寸范围较大,加工精度较高.此工艺制造的离轴抛物面面型精度可达到亚微米级,粗糙度达到纳米级.因此,可直接用于红外光学应用,若经后续抛光则可用于空间望远镜等更高精度需求的场合.介绍了慢刀伺服车削加工离轴抛物面镜的在轴加工方法,理论推导了刀具对中误差所带来的面形误差的极值分布规律.仿真研究进一步揭示了工件中心区域面形误差的详细分布.实验数据与理论结果和仿真计算结果均吻合.     

溅射非晶态薄膜磁性的控制

微电子技术的迅速发展要求电子元件薄膜化,从而促进了磁性薄膜的发展.为了达到控制溅射非晶态薄膜磁性的目的,从溅射非晶态薄膜的组成成分、溅射工艺参数、基体材料及温度、膜层厚度和镀后热处理工艺等几方面论述了影响非晶态溅射薄膜磁性的因素,结果表明,薄膜组成、膜厚、基材、溅射工艺及镀后热处理对溅射非晶态薄膜的磁性有较大的影响,应根据不同磁性要求加以控制.     

磁控溅射膜厚均匀性与靶-基距关系的研究

从理论上分析了平面磁控溅射靶沉积薄膜的厚度均匀性.根据磁控溅射阴极靶刻蚀的实际测量数据,建立了靶的刻蚀速率方程,以此为依据,对膜厚均匀性的有关公式进行了讨论.采用计算机计算了基片处于不同靶-基距时,膜厚均匀性的分布.研究结果表明,随着靶基距的增加,膜厚均匀性逐渐变好.在同样的靶基距下,沿靶长度方向的均匀性明显优于宽度方向.最后,通过实验证实了上述结论.     

小圆平面靶磁控溅射镀膜均匀性研究

本文从圆平面靶磁控溅射的原理出发,针对圆形平面靶面积小于基片面积的特点进行分析,建立膜厚分布的数学模型,并利用计算机进行模拟计算,目的在于探寻平面靶材面积小于基片面积时影响膜厚均匀性的因素。模拟计算的结果表明:基片偏心自转时,靶基距和偏心距对膜厚分布均有影响。偏心距一定时,随着靶基距的增大,薄膜厚度变小,膜厚均匀性有提高的趋势;靶基距一定时,随着偏心距的增大,膜厚均匀性先变好后变差。当基片自转复合公转时,随着转速比的增大,膜厚均匀性逐渐变好,转速比增大到一定程度后,它对膜厚均匀性的影响逐渐变小。圆形平面靶的刻蚀环范围的变化对薄膜的均匀性有一定的影响。这些理论为小圆平面磁控溅射系统的设计和实际应用提供了理论依据。     

Microstructure analyses of the titanium films formed by the ionized sputtering process

We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate bias show less strong (002) textures than collimated sputtering. The Ti-films created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputtering processed Ti-films show about 4 nm thick amorphous Ti–Si interlayer, which is much thicker than that of the collimated sputtering process. The modifications of the microstructure of Ti-films are attributed to the ion bombardments during the ionized sputtering deposition process.     

Substrate geometry effect on the uniformity of amorphous carbon films deposited by unbalanced magnetron sputtering

A chromium doped amorphous carbon (a-C) film was deposited by an unbalanced magnetron sputtering. A special designed double-V shaped stainless steel model in simulating a plastic injection mold gateway was used as the substrate to investigate the geometric effect on the uniformity of the film. It was found that, on both the side wall and bottom plane of the double-V shaped substrate, the film properties strongly depended on a geometric parameter, geometric aspect ratio, defined as the depth over width of the simulated gateway at the points under measurement. With the increase of the aspect ratio, i.e. approaching to the narrow end and/or closer to the bottom plane of the gateway, the film thickness and hardness decreased and the intensity ratio of the Raman sub-bands D over G increased. With the increase of the aspect ratio, the micro hardness of the a-C film decreased far more significantly on the side wall than that on the bottom plane. With increasing working gas pressure, the film thickness decreased consistently, and the hardness uniformity on both the side wall and bottom plane was improved. When the substrate negative bias voltage was changed from −70 to −100 V, the film uniformity (for both the thickness and hardness) was improved on the bottom plane, but degraded on the side wall.     

Quantitative modeling of reactive sputtering process for MgO thin film deposition

Reactive sputtering process of magnesium target in d.c. planar magnetron discharge using argon and oxygen gases as buffer and reactive gases, respectively, has been investigated. A drastic mode transition between metallic and oxide modes has been observed due to a large difference in the secondary electron emission coefficients of magnesium and magnesium oxide. To describe the experimental results quantitatively, a new reactive sputtering model has been developed. The model is fundamentally based on a simple reactive gas balance model proposed by Berg et al. in 1988, but includes the change in the secondary electron emission coefficient of target. The modified model can deal with the change of plasma properties through the change of ion to electron current ratio at the target, and can quantitatively describe experimental results such as oxygen flow rate dependence of deposition rate and discharge voltage, which were obtained at a constant discharge current.     

XJPD-900磁控溅射设备的控制软件编程及工艺试验

本文对XJPD-900磁控溅射生产线的控制系统进行了设计,重点对应用PLC和iFix组态软件实现工艺过程自动控制以及EXCEL表格数据存储等的程序做了设计分析,完成了整机的工艺试验.设备使用证明控制系统界面清晰友善、操作方便,系统稳定可靠、工艺重复性好,达到了设计目的.     

Effect of deposition geometry on structural, electrical and optical properties of ZnO:Al films by magnetron sputtering

Al-doped ZnO films were prepared by the dc magnetron sputtering technique on Suprasil-1 substrates at a temperature of 470 K. Plasma-emission monitoring was used to stabilize oxygen flow to the deposition chamber. The effect of substrate position during deposition on the structural, electrical and optical properties of the films was investigated. It was found that preparation of low-resistance films with high optical transmission over the visible region is possible under condition of low plasma effects on the growing film.     

装饰薄膜ZrN的中频反应磁控溅射沉积工艺研究

利用中频反应磁控溅射技术在1Cr18Ni9Ti不锈钢基底上沉积ZrN薄膜。通过控制N/Ar、溅射功率和基体偏压等参数,得到不同实验条件的ZrN膜层。通过对膜层颜色测量和AES分析,研究N分压强对ZrN膜层质量的影响。实验结果表明：工作气压0.3Pa,溅射功率5kW,基体偏压-150V、占空比50%等工艺参数一定的前提下,N分压强在不同的范围内,可以分别制备出视觉效果类似于18K、23K和纯金的氮化锆膜层。