Solid State Physics View of Liquid State Chemistry Ⅱ. Electrical Capacitance of Pure and Impure Water

More than 80 years of theories and experiments on water suggested to us, described in our first water-physics report, that pure water＇s ＂abnormally＂ high electrical conductivity is due to transport of positive and negative quasi-protons, p＋ and p-, between the neutral proton traps V （H20） in the extended water, [（H20）N]＋, converting it respectively to positively and negatively charged proton traps, V＋ = （H30）1＋ and V- = （HO）1-. In this second report, we present the theoretical charge control capacitances of pure and impure water as a function of the DC electric potential applied to water.     

电容器

Y2000-62093-V-414 0012510基于断续耦合电容器的浑沌网络=A chaotic networkbased on intermittently coupled capacitors[会,英]/Ko-matsu,F.& Torikai,H.//1999 IEEE InternationalSymposium on Circuits and Systems,Vol.5 of 6.—V-414～V-417(PC)0012511银迁移对 PMZNT 基独石电容器电性能的作用机理[刊]/左如忠//压电与声光.—2000,22(3).—154～156(L)     

电感器、变压器、线圈、阻流圈

Y2000-62093-V-214 0012512奇生电感对串联固定型开关电容器变压器的影响=Influence of parasitic inductance on serial fixed typeswitched-capacitor transformer[会,英]/Oota,I.&Hara,N.//1999 IEEE International Symposium on Cir-cuits and Systems,Vol.5 of 6.—V-214～V-217(PC)Y2000-62093-V-314 0012513非线性电阻器用的噪声等效电路=Noise equivalentcircuit for nonlinear resistors[会,英]/Weiss,L.&Mathis,W.//1999 IEEE International Symposium onCircuits and Systems,Vol.5 of 6.—V-314～V-317(PC)     

通信系统与通信网

Y2000-62093-V-446 0013071浑沌通信方案的噪声降低方法=Noise reduction meth-ods for chaotic communication schemes[会,英]/Kisel,A.& Dedieu,H.//1999 IEEE International Sympo-sium on Circuits and Systems,Vol.5 of 6.—V-446～V-449(PC)本文讨论两个问题:采用最大似然法净化浑沌载波噪声和浑沌载波通信方案设计。提出了噪声净化方法。参17     

多址通信

Y2002-63084-215 0213361异步 MC-CDMA 通信系统用的 Hopfield 神经网络与维特比译码=Hopfield neural network and viterbi decodingfor asynehronous MC-CDMA communication systems[会,英]/Soujeri,E.& Bilgekul,H.//ICM 2000 Pro-ceedings of the Twelfth International Conference on Mi-croelectronics.—215～218(PE)     

整流器、电源电路

Y2000-62093-V-110 0012543闭环脉宽调制直流-直流变换器的抽样数据模拟与分析=Sampled-data modeling and analysis of closed-loopPWM DC-DC converters[会,英]/Fang,C.-C.&Abed.E.H.//1999 IEEE International Symposium onCircuits and Systems,Vol.5 of 6.—V-110～V-115(PC)介绍了固定开关频率连续与不连续传导型脉宽调制(PWM)直流-直流(DC-DC)变换器的通用方块图模型。讨论了这些模型电流型与电压型控制。根据这些模型导出了详细的非线性与线性化抽样数据动态特性。分析了渐近轨道稳定性。导出了声频磁化率和输出阻抗。利用这种方法,可以不费力地分析不连续传导型和电流型控制。参25     

逻辑电路、脉冲电路

Y2000-62093-V-331 0012880采用毗连网络技术的周期性开关线性电路的敏感性分析=Sensitivity analysis of Periodically switched linearcircuits using an adjoint network technique[会,英]/Yuan,F.& Dpal,A.//1999 IEEE International Sym-posium on Circuits and Systems,Vol.5 of 6.—V-331～V-334(PC)     

其它电路与技术

Y2000-62093-V-479 0012882浑沌扰动感生的非线性系统阵列中的自组织试验方法=Self-organisation in arrays of nonlinear systems inducedby chaotic perturbation:an experimental approach[会,英]/Arena,P.& Fortuna,L.//1999 IEEE Interna-tional Symposium on Circuits and Systems,Vol.5 of6.—V-479～V-482(PC)     

微特电机

Y2000-62093-V-106 0012518高性能工业应用直流无刷电动机驱动系统的精确建模与模拟=Accurate modelling and simulation of a DCbrushless motor drive system for high performance indus-trial applications[会,英]/Guinee,R.A.& Lyden,C.//1999 IEEE International Symposium on Circuitsand Systems,Vol.5 of 6.—V-106～V-109(PC)     

自动控制、自动控制设备及系统

Y2000-62093-V-371 0013767实时控制用的全并行单片学习硬件神经网络=Fullyparallel on-chip learning hardware neural network for re-al-time control[会,英]/Liu,J.& Brooke,M.//1999IEEE International Symposium on Circuits and Systems,Vol.5 of 6.—V-371～V-374(PC)Y2000-62093-V-571 0013768着重于功耗的模拟与混合信号模糊控制器的自动合成=Automatic synthesis of analog and mixed-signal fuzzycontrollers with emphasis in power consumption[会,英]/     

IC Design of Motor Ignitor

On the basis of analysing traditional motor ignitor, a new motor ignitor design with precise ignition angle control, consistency and low cost is proposed. Techniques of low pertinence to process and power supply are introduced to promote its stability, reliability and unity. This circuit is implemented with a standard CMOS technology with perfect electric static discharge（ESD） design and can work under a broad range of power supply from 3 V-5 V with a quiescent current less than 2 mA and can be widely used in motor with a displacement of 125 ml and below.     

军事通信、保密通信与扩频通信

Y2000-62093-V-410 0013127脉冲同步化试验研究=Experimental study of impulsivesynchronization[会,英]/Itoh,M.//1999 IEEE Interna-tional Symposium on Circuits and Systems,Vol.5 of6.—V-410～V-413(PC)利用两种试验电路研究了脉冲同步化,即 Chua's振荡器和超浑沌电路。通过构成基于浑沌的通信系统证明了其性能。参8     

Silicon light emitting device in CMOS technology

A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.     

膜混合集成电路、MOS集成电路

Y2000-62093-V-383 0012742模拟 CMOS4象限乘法器与除法器=Analog CMOSfour-quadrant multiplier and divider[会,英]/Vlassis,S.& Siskos,S.//1999 IEEE International Symposium onCircuits and Systems,Vol.5 of 6.—V-383～V-386(PC)介绍了模拟 CMOS4象限乘法器与2象限除法器电路。描述了乘法器与除法器的性能、结构及应用。并给出了试验结果。参13     

Analysis on Conductivity of nc—Si：H Films

A conduction channel model is propsed to explain the high conductivity property of nc-Si:H.Detailed energy band diagram is developed based on the analysis and calculation ,and the conductivity of the nc-Si:H was then analysed on the basis of energy band theory.It is assumed that the conductivity of the nc-Si:H stems from two parts:the conductance of the interface,where the transport mechanism is identified as a thermal -assisted tunneling process,and the conductance along the channel around the grain,which mainly determined the high conductivity of the nc-Si:H.The conductivity of nc-Si:H is calculated and compared with the experiment data .The theory is in agreement with the experiment.     

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique,developed by the authors,for operation in the Ka-,V- and W-band frequencies.The results are further compared with corresponding Si and Ge homo-junction devices.The study shows high values of device efficiency,such as 23%, 22%and 21.5%,for n-Ge/p-Si IMPATTs at the Ka,V and W bands,respectively.The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7×10~6 S/m~2 and 71.3×10~6 S/m~2, which are～3-4 times better than their Si and Ge counterparts at the V-band.The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0×10~9,1.1×10~9 and 1.4×10~9 W/m~2,respectively,for Ka-,V- and W-band operation,which can be observed to be the highest when compared with Si,Ge and n-Si/p-Ge devices.Both of the hetero-junctions,especially the n-Ge/p-Si hetero-junction diode,can thus become a superior RF-power generator over a wide range of frequencies.The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.     

计算机应用

Y2000-62093-V-583 0013697模糊多项式双向异质相关器能力的理论期望值=The-oretical expectation value of the cspacity of fuzzy polyno-mial bidirectional hetero-correlator[会,英]/Wang,C.-C.& Tsai,C.-F.//1999 IEEE International Sympo-sium on Circuits and Systems,Vol.5 of 6.—V-583～V-586(PC)提出了采用多项式双向异质相关器(PBHC)的模糊数据调用法。介绍了大容量 PBHC 框架、特征、发展方程、能量函数和稳定性。并估计了采用 PBHC 的模糊数据调用能力理论期望值。参4     

酞菁锌/氢化非晶硅复合薄膜光电性质的研究

Composites consisting of hydrogenated amorphous silicon （a-Si： H, inorganic） and zinc phthalocyanine （ZnPc, organic） were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition （PECVD）. The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si： H film. Electron mobility-lifetime products/lr of the composite film were increased by nearly one order of magnitude from 6.96 × 10^-7 to 5.08 × 10^-6 cm2/V. Combined with photoconductivity spectra of the composites and pure a-Si： H, we tentatively elucidate the improvement in photoconductivity of the composite film.     

多址通信

Y2000-62093-V-403 0013095基于浑沌的异步 DS-CDMA 系统的上、下性能限度=Upper and lower performance bounds for chaos-basedasynchronous DS-CDMA systems[会,英]/Setti,G.&Mazzini,G.//1999 IEEE International Symposium onCircuits and Systems,Vol.5 of 6.—V-403～V-406(PC)Y2000-62093-V-603 0013096DS-CDMA 系统盲目多用户检测用的神经网络法=Blind multiuser detection for DS-CDMA systems:a neu-ral network approach[会,英]/Wang,N.& Zhu,W.-     

Instability of nc—SI：H Films Fabricated by PECVD

An analysis is given to explain the instability of the high conductivity property of nc-Si:H fabricated.Detailed discussion is carried out concentrating on the conductivity and growth mechanism.It is assumed that the instability of the conductivity of the nc-Si:H stems from two part:the phase transition from nanocrystallites into a -Si:H,and the oxygen incorporation of the thin layer of the film,which contributes more to the effect when the film suffers the exposure to air.The theory is in agreement with the experiment and measurement.