Comparative study on the spectroscopic properties of Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ with hybrid process

We have proposed a hybrid procedure for determining spectroscopic parameters for uniaxial solid-state laser crystals. Using our procedure, the spectroscopic properties of Nd:GdVO/sub 4/ were evaluated and compared to those of Nd:YVO/sub 4/. As a result, the peaks of absorption and stimulated emission cross sections of Nd:GdVO/sub 4/ in /spl pi/-polarization were determined to be 2.6 and 10.3/spl times/10/sup -19/ cm/sup 2/, respectively, and were smaller than those of Nd:YVO/sub 4/. On the other hand, the fluorescence lifetime of 1 at% Nd:GdVO/sub 4/ was evaluated to be 83.4 /spl mu/s, and was similar to 84.1 /spl mu/s of 1 at% Nd:YVO/sub 4/. Therefore, the product of stimulated emission cross section and fluorescence lifetime (/spl sigma//sub em//spl tau//sub f/ product) of Nd:GdVO/sub 4/ was smaller than that of Nd:YVO/sub 4/ under 1 at% of Nd/sup 3+/ doping concentration. The radiative lifetime of spontaneous emission of Nd:GdVO/sub 4/ was 168 /spl mu/s and was 1.9 times longer than that of Nd:YVO/sub 4/. Because of the low value of radiative quantum efficiency of Nd:GdVO/sub 4/ (50%), careful cavity design is required for creating a well performing solid-state laser with Nd:GdVO/sub 4/, based on the larger /spl sigma//sub em//spl tau//sub f/ product rather than the /spl sigma//sub em//spl tau//sub f/ product of Nd:YAG.     

High-power scaling (>100 W) of a diode-pumped TEM/sub 00/ Nd:GdVO/sub 4/ laser system

We present results of an investigation to scale a diode-pumped A Nd:GdVO/sub 4/ laser system to high powers (>100 W) using a bounce amplifier configuration. A Nd:GdVO/sub 4/ laser oscillator with a bounce amplifier geometry, pumped by a single 40-W diode bar, gave 24 W of multimode output power (60% optical efficiency), and 20 W of TEM/sub 00/ output with M/sup 2/<1.05. Power scaling of the oscillator system with pumping by multiplexing two (nominally) 40-W diode bars gave 50.1 W of multimode output at 83-W diode pumping, 40 W of predominantly TEM/sub 00/ output from 81-W of diode pumping, and 34 W TEM/sub 00/ output (M/sup 2//sub x/=1.05,M/sup 2//sub y/=1.1) with an external slit spatial filter. Higher power scaling is achieved by using a master-oscillator power-amplifier (MOPA) configuration with the double-diode-pumped oscillator and a bounce amplifier pumped by a 3-bar diode stack. A multimode MOPA output of 100 W is achieved by single pass amplification with 145-W amplifier diode pumping and 104-W TEM/sub 00/ mode using a double bounce amplifier configuration with 180-W amplifier diode pumping.     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

Laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO/sub 4//KTP Green laser with GaAs saturable absorber

The intracavity photon density is assumed to be Gaussian spatial distributions, and the nonlinear loss that is due to second-harmonic generation (SHG) to the photon-density equation is given under Gaussian spatial distributions in the rate equations for a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO/sub 4//KTP laser with a GaAs saturable absorber. These space-dependent rate equations are solved numerically. The dependences of pulsewidth, pulse repetition rate, single-pulse energy, and peak power on incident pump power are obtained for the generated-green-laser pulses. In the experiment, a laser-diode end-pumped passively Q-switched intracavity-frequency-doubling Nd:GdVO/sub 4//KTP laser with a GaAs saturable absorber is realized, and the experimental results are consistent with the numerical solutions.     

The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.     

Noise figure of parametric wavelength conversion with quasi-phase-matched LiNbO/sub 3/ waveguide

An analytical model of the noise accumulation in a chain of parametric wavelength converters is proposed. Signal-to-noise electrical power ratio is analytically given as a function of node number k in a chained transparent node system that consists of optical amplifiers, parametric wavelength converters, and several loss elements including optical transmission fiber with parameters of pump light excess noise /spl beta//sub p/, and average photon numbers per unit time of pump light and input signal , and , respectively, and spontaneous emission factor of optical amplifier n/sub sp/. The signal-to-noise degrades inversely proportional to node number k with the coefficient defined by NF/sup (1)/=2n/sub sp/+/spl beta//sub p// when k is lower than /Bo, where B/sub o/ represents optical bandwidth. The noise figure dependence on pump light quality /spl beta//sub p// and average photon number of input light in a single stage configuration are experimentally evaluated using Er-doped fiber amplifiers and quasi-phase-matched lithium niobate waveguide parametric wavelength conversion.     

High-power CW deep-UV coherent light sources around 200 nm based on external resonant sum-frequency mixing

We report pure continuous-wave (CW) high-power (>100 mW) deep-ultraviolet (DUV) light sources emitting around 200-nm spectral region based on singly resonant sum-frequency mixing (SRSFM). Efficient DUV generation is made possible by use of a Brewster-cut CsLiB/sub 6/O/sub 10/ (CLBO) crystal near noncritically phase-matched (NCPM) condition for the SFM of 1-/spl mu/m output of neodymium lasers. The CW radiation of fifth-harmonic wavelength of a neodymium laser at 213 nm was generated by the SFM of enhanced 1064-nm radiation with single-passing 266-nm radiation produced by external-resonant frequency doubling of a 532-nm green laser. With 1.8 W of 266-nm radiation incident upon a CLBO crystal, as much as 180 mW of CW 213-nm power has been produced. The sub-200-nm CW radiation with 140-mW power has also been achieved by SFM of 1064 nm with 244-nm radiation from a frequency-doubled Argon-ion laser in the CLBO crystal operated near the NCPM condition.     

Influence of doping concentration on the power performance of diode-pumped continuous-wave Tm/sup 3+/:YAlO/sub 3/ lasers

We investigated the effect of thulium ion concentration on the continuous-wave (CW) power performance of diode single-end-pumped thulium-doped YAlO/sub 3/ (Tm:YAP) lasers. Three samples with 1.5%, 3%, and 4% Tm/sup 3+/ concentration were examined at 18/spl deg/C. Lifetime and fluorescence measurements were further performed to assess the strength of cross relaxation and nonradiative decay. Our results showed that in single-end-pumped configurations, the best CW power performance was obtained with the 1.5% Tm:YAP sample, and laser performance of the samples degraded monotonically with increasing Tm/sup 3+/ concentration. By using 9.5 W of incident pump power at 797 nm, a maximum of 1430 mW of output power was obtained with the 1.5% Tm:YAP sample and 2% output coupler. We discuss how the effects of cross relaxation, reabsorption, nonradiative decay, and internal heating vary with increasing concentration. Spectroscopic measurements and rate-equation analysis suggest that cross relaxation should already be effective in samples with 1.5% Tm/sup 3+/ ion concentration and doping concentrations larger than 4% will lead to degradation in power performance due to higher nonradiative decay rates and larger reabsorption losses.     

Boundary effects on the optical properties of InGaN multiple quantum wells

We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of /spl sim/8.5/spl times/10/sup -18/ meV /spl middot/ cm/sup 3/ and 2) change of the internal field of /spl sim/3/spl times/10/sup -14/ meV /spl middot/ cm/sup 2/ with the injected carrier density up to N/sub inj//spl sim/10/sup 19/ cm/sup -3/ at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.     

A 2.65-kW Yb:YAG single-rod laser

We report a continuous-wave average output power of 2.65 kW from a single Yb:YAG laser rod pumped with 9000 W from 940 nm InGaAs laser diodes. To the best of our knowledge, this is the highest average output power ever reported from a single Yb:YAG gain element. The optical-to-optical efficiency (i.e., output power to raw laser diode optical power) was 28%. We also obtained 860 W with an M/sup 2/ of 2.1 when pumping with 6000 W, obtaining 14% optical-to-optical efficiency.     

High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures

Design, fabrication, and characterization of high-performance Al/sub x/Ga/sub 1-x/N-based photodetectors for solar-blind applications are reported. Al/sub x/Ga/sub 1-x/N heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I--V) characteristics led to a detectivity performance of 4.9/spl times/10/sup 14/ cmHz/sup 1/2/W/sup -1/. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2/spl times/10/sup 4/ was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.     

A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

A simple and physical drain avalanche hot carrier lifetime model has been proposed. The model is based on a mechanism of interface trap generation caused by recombination of hot electrons and hot holes. The lifetime is modeled as /spl tau/(I/sub d//W)/sup 2//spl prop/(I/sub sub//I/sub d/)/sup -m/. The formula is different from the conventional /spl tau/I/sub d//W-I/sub sub//I/sub d/ model in that the exponent of I/sub d//W is 2, which results from the assumed mechanism of the two-carrier recombination. It is shown that the mechanism gives a physical basis of the empirical /spl tau/-I/sub sub//W model for NMOSFETs. The proposed model has been validated experimentally both for NMOSFETs and for PMOSFETs. Model parameters extracted from experimental data show that carrier critical energies for creating damage are lower than the interface potential barriers. It is supposed that oxide band edge tailing enables low-energy carriers to create the damage. The channel hot electron condition becomes the worst case in short channel NMOSFETs, because gate voltage dependence of the maximum channel electric field decreases.     

High-speed InSb photodetectors on GaAs for mid-IR applications

We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06/spl times/10/sup -6/ cm/sup 2/ to 2.25/spl times/10/sup -4/ cm/sup 2/ measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 /spl Omega/ cm/sup 2/. At 77 K, spectral measurements yielded high responsivity between 3 and 5 /spl mu/m with the cutoff wavelength of 5.33 /spl mu/m. The maximum responsivity for 80-/spl mu/m diameter detectors was 1.00/spl times/10/sup 5/ V/W at 4.35 /spl mu/m while the detectivity was 3.41/spl times/10/sup 9/ cm Hz/sup 1/2//W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 /spl mu/m with the pump at 780 nm. 30-/spl mu/m diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.     

Modeling and measurements of the radiative characteristics of high-power /spl alpha/-DFB lasers

A new above-threshold model of /spl alpha/-DFB lasers is presented. It is based on a generalized beam-propagation method and takes into account spatial hole burning and self-heating effects. Up to moderate output powers, a good agreement between simulated and measured radiative characteristics is obtained. The theoretical model was used to design an optimized laser structure with a 4-mm-long cavity, which yielded a maximum output power of 3 W with a times-diffraction-limit factor of M/sup 2//spl ap/3.     

Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET

The temperature-dependent characteristics of an InGaP/InGaAs/GaAs heterostructure field-effect transistor (HFET), using the (NH/sub 4/)/sub 2/S/sub x/ solution to form the InGaP surface passivation, are studied and demonstrated. The sulfur-passivated device shows significantly improved dc and RF performances over a wide temperature range (300-510 K). With a 1/spl times/100-/spl mu/m/sup 2/ gate-dimension HFET by (NH/sub 4/)/sub 2/S/sub x/ treatment, the considerably improved thermal stability over dc performances including lower temperature variation coefficients on the turn-on voltage (-1.23 mV/K), the gate-drain breakdown voltage (-0.05 mV/K), the gate leakage current (1.04 /spl mu/A/mm/spl middot/K), the threshold voltage (-1.139 mV/K), and the drain-saturation-current operating regimes (-3.11/spl times/10/sup -4//K) are obtained as the temperature is increased from 300 to 510 K. In addition, for RF characteristics, the sulfur-passivated device also shows a low degradation rate on drain-saturation-current operating regimes (-3.29/spl times/10/sup -4//K) as the temperature is increased from 300 to 400 K. These advantages provide the promise for high-speed high-frequency high-temperature electronics applications.     

Characterization of Si implants in p-type GaN

Si ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N/sub 2/ has been performed. X-ray diffraction analyses indicate that ion-implanted damage remains even with 1050/spl deg/C, 60 s RTA. By varying implantation and postimplantation annealing conditions, we could convert carrier concentration from p-type 3 /spl times/ 10/sup 17/ cm/sup -3/ into n-type 2 /spl times/ 10/sup 17/ cm/sup -3/ /spl sim/2 /spl times/ 10/sup 19/ cm/sup -3/. It was found that typical activation energies of Si implants in p-GaN are lower than 10 meV. Such activation energies are smaller than those observed from epitaxially grown Si-doped GaN films. A deep donor level with activation energy of 60 meV was also found from some samples. Photoluminescence studies show that the peak appears at 372 nm might be related to implantation-induced defects. It was also found that a green emission band could be observed from Si-implanted GaN. It was shown that such a green emission is related to the yellow band observed from epitaxially grown Si-doped GaN. The transport properties of these Si-implanted samples were also studied.     

Seeding of an eleven femtosecond optical parametric chirped pulse amplifier and its Nd/sup 3+/ picosecond pump laser from a single broadband Ti:Sapphire oscillator

We demonstrate direct simultaneous seeding of a few-cycle optical parametric chirped pulse amplifier (OPCPA) in the 700-1000-nm spectral range, and of a Nd:YLF amplifier emitting 30-ps pulses at 1053 nm by use of a chirped-mirror 6-fs Ti:sapphire oscillator. This approach of employing a single master oscillator to drive two power amplifiers simplifies the pump laser design and is applied to eliminate the timing jitter between the seed and the pump pulses in the OPCPA chain. We show that 10 mJ fundamental picosecond pump pulses with the intensity contrast in excess of 10/sup 4/ relative to the nanosecond Q-switched background can be achieved with the seed intensity available in the edge of the oscillator spectrum around 1053 nm. Cross-correlation measurements between the picosecond pump and femtosecond oscillator pulses reveal no traceable timing jitter between the OPCPA pump and seed pulses. The estimated long-term jitter of 0.3 ps is attributed to the thermal expansion of the cavity of the Nd:YLF regenerative amplifier.     

Dynamics of the discharge-pumped vacuum ultraviolet Kr/sub 2//sup */ laser

A numerical simulation code has been developed to investigate the dynamics of the discharge-pumped vacuum ultraviolet Kr/sub 2//sup */ laser. Dynamics of spectral narrowing of the laser emission down to 0.2-nm full-width at half-maximum (FWHM) was well reproduced. Small signal gain behavior as a function of the applied voltage was predicted to have a gain coefficient of 0.08 cm/sup -1/ at the applied voltage of 32 kV, which was more than twice as large as the experimentally observed maximum gain value (0.035 cm/sup -1/). The code predicted that the laser output energy could become more than 1 mJ at the applied voltage at the Kr gas pressure of 10 atm.     

High-average power EUV light source for the next-generation lithography by laser-produced plasma

Laser-produced plasma is expected to fulfill the strict requirement as an extreme ultraviolet (EUV) light source for the next-generation lithography with 115-W average power at the intermediate focus, in terms of stability, minimum contamination, and cost of ownership. A liquid xenon micro jet is employed in our experimental facility to confirm the scalability up to the 115-W clean output power. The present experimental device is composed of a 1-kW 10-kHz 6-ns Nd:YAG laser with a xenon jet of up to 50-/spl mu/m diameter of 35 m/s speed inside a vacuum chamber, combined with a xenon recirculation system. The observed EUV power is 4 W at 13.5 nm (2% bandwidth, 2/spl pi/sr) from the plasma source with 0.5% stability (1 /spl sigma/, 50-pulse moving average). Debris mitigation and contamination control is now studied for fast ions by time-of-flight measurements, and confinement and exhaust by a magnetic field is shown to be effective. Xe/sup +/ to Xe/sup 13+/ ions were observed with Xe/sup 2+/ being the main charged state. Experimental study is presented on these subjects and further parametric study on the laser wavelength and pulsewidth is reported, discussing the scalability toward the realization of a 115-W system.     

Electron mobility in dense argon gas at several temperatures

The mobility /spl mu/ of excess electrons in dense Argon gas was measured as a function of the applied electric field E and of the gas density N at several temperatures in the range 142.6 < T < 200 K, encompassing the critical temperature T/sub c/ = 150.86 K We report here measurements up to N /spl ap/ 7 nm/sup -3/, close to the critical density, N/sub c/ /spl ap/ 8.1 nm/sup -3/. At all temperatures, and up to moderately high densities, the density-normalized mobility /spl mu/N shows the usual electric field dependence in a gas with a Ramsauer-Townsend minimum due to the mainly attractive electron-atom interaction. /spl mu/N is constant and field independent for small E, shows a maximum for a reduced field E/N /spl ap/ 4 mTd, and then decreases rapidly with the field. The zero field density-normalized mobility /spl mu//sub 0/N, for all T > T/sub c/, shows the well known anomalous positive density effect, i.e., /spl mu//sub 0/N increases with increasing N. Below T,, however, /spl mu//sub 0/N does not show the expected effect, but features a broad maximum. This appears to be a crossover behavior between the positive density effect shown for T > T, and the small negative effect previously observed for T /spl ap/ 90 K However, the data at all temperatures confirm the interpretation of the anomalous density effect as being essentially due by the density-dependent quantum shift of the electron ground state kinetic energy in a disordered medium as a result of multiple scattering (MS) processes, although other MS processes influence the experimental outcome.