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偏压对阴极电弧离子镀AIN薄膜的影响 总被引:1,自引:0,他引:1
在不同基体负偏压作用下,用阴极电弧离子镀等离子体物理气相沉积(PVD)方法在单晶Si(100)基片上获得六方晶系的晶态AIN薄膜。用X射线衍射仪分析了沉积膜的物相组成和晶格位向随偏压的变化。在扫描电子显微镜(SEM)下观察沉积膜的显微组织形貌。结果表明,在较小偏压下,AIN膜呈(002)择优取向,表面致密均匀;在较大偏压下,AIN膜呈(100)择优取向,表面形貌则粗糙不平,AIN薄膜的择优取向及表面形貌受到不同偏压下不同离子轰击能量的影响。 相似文献
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本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜... 相似文献
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采用脉冲激光沉积(PLD)方法,在SrTiO3(100)衬底上在650℃、10Pa N2条件下成功制备了立方结构的AlN薄膜.高能电子衍射(RHEED)及X射线衍射(XRD)分析表明立方AlN和SrTiO3的外延关系为AlN[100]∥SrTiO3[100]和AlN(200)∥SrTiO3(100).其AlN(200)衍射峰的摇摆曲线半高宽(FWHM)为0.44°,说明薄膜结晶性能良好.原子力显微镜(AFM)表明外延的立方AlN薄膜表面具有原子级平整度,其表面均方根粗糙度(RMS)为0.674nm.通过X光电子能谱(XPS)分析AlN薄膜表面成分,结果表明AlN薄膜表面没有被氧化. 相似文献
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本文介绍了用 x-射线衍射仪、扫描电镜和透射电镜来分析用直流平面磁控溅射法在载波片上生长的 AIN 薄膜的结构,结果表明 AIN 薄膜的(002)晶面与基片表面平行,迴摆曲线分析得出标准偏差σ≈0.7°,俄歇谱分析结果表明制得的 AIN 薄膜是高纯的。这种方法适于制取 C轴高度择优取向 AIN 薄膜。 相似文献
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用离子束辅助沉积合成了TiN薄膜,背散射、X射线衍射和透射电镜实验的结果表明,在本实验条件下,薄膜Ti/N比接近于TiN的化学计量比,和氮离子束流密度无关。薄膜存在<100>择优取向,在一定条件下,可以形成只有(100)取向的TiN薄膜。 相似文献
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本文采用金属有机化学气相沉积(MOCVD)法在MgO(100)衬底上成功生长了非极性的m面(1010)ZnMgO薄膜。研究了衬底温度对ZnMgO薄膜生长取向的影响。X射线衍射(XRD)分析结果表明当衬底温度为400℃时可以获得单一取向的m面ZnMgO薄膜。采用扫描电子显微镜(SEM)观察到ZnMgO薄膜表面平整,由条纹状结构组成。透射电子显微镜(TEM)分析进一步证明ZnMgO为具有m面取向的单晶薄膜。X射线光电子能谱(XPS)定量分析表明ZnMgO薄膜中Mg含量为3at.%。 相似文献
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通过直流磁控溅射法在单晶Si(100)基底上制备了Zr/Nb/Si薄膜材料。X射线衍射(XRD)研究表明Zr薄膜以多晶形式存在,而Nb薄膜则形成了(110)晶面择优生长。薄膜中Zr和Nb晶粒大小分别为14,6 nm。扫描电镜研究表明形成的薄膜表面平整光滑,没有微裂纹存在。扫描俄歇电子能谱及X射线光电子能谱的研究表明,Zr/Nb/Si薄膜样品具有清晰的界面结构。在薄膜表面形成了致密的氧化层物种,而在膜层内部少量氧则以吸附态形式存在。 相似文献
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HWAN-CHUL LEE JAI-YOUNG LEE 《Journal of Materials Science: Materials in Electronics》1997,8(6):385-390
Aluminium nitride thin films have been fabricated on silicon wafers by reactive r.f. magnetron sputtering in mixed Ar-N2 discharge
with variation of negative bias voltage. The effect of negative bias voltage on the microstructures of AlN thin films have
been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), stress measurement, Auger electron spectroscopy
(AES), etc. While the negative bias voltage was varied in the range 0 to −45 V, highly c-axis oriented film can be fabricated
at −30 V, and the grain size and compressive stress increase with the negative bias voltage. From the plasma analysis, the
dominant positive chemical species is identified as N+2 ions. The above results can be understood considering that at the
kinetic energy transfer and flux of N+2 ions increase with increasing negative bias voltage.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
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Shadi Al-Khateeb D. Pavlopoulos T. W. Button J. S. Abell 《Journal of Superconductivity and Novel Magnetism》2012,25(6):1823-1827
Pulsed laser deposition (PLD) was used to deposit YBCO on MgO-buffered C276 substrates in order to evaluate the quality of the deposited MgO films which were deposited by spray pyrolysis. The characterization of the thin films was done using scanning electron microscopy, atomic force microscopy, electron backscattered diffraction, X-ray diffraction 2??-scans, rocking curve (??-scans), phi scan, pole-figure measurements, and AC susceptibility. It was found that c-axis oriented YBCO films were grown on c-axis oriented MgO films which confirm that the deposited YBCO films copied the out-of-plane texture of the spray pyrolyzed MgO buffer. However, MgO and YBCO films have a very weak in-plane texture. The AC susceptibility measurements show that the YBCO films have a broad superconducting transition temperature which may be attributed to the weak in-plane texture. 相似文献
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采用脉冲激光沉积技术,在以c轴取向ZnO作为缓冲层的金刚石/硅基底上制备出了结晶良好的高c轴取向LiNbO3薄膜。利用X射线衍射对薄膜的结晶质量和c轴取向性进行了研究,结果表明制得的LiNbO3薄膜具有高度c轴取向且结晶质量良好。采用扫描电子显微镜和原子力显微镜对薄膜的表面形貌进行了分析,发现薄膜表面光滑,晶粒尺寸均匀,薄膜表面粗糙度约为20nm。 相似文献
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Tajiri T Sumitani K Haruki R Kohno A 《IEEE transactions on ultrasonics, ferroelectrics, and frequency control》2007,54(12):2574-2578
Polycrystalline thin films of La-substituted bismuth titanate (BLT) were formed directly on p-type Si(100) substrates by using sol-gel and spin coat methods. The BLT film and interfacial layer between BLT and Si were quantitatively investigated by the X-ray reflectivity method. Also, crystal orientations of sub-100-nm-thick BLT thin films were confirmed by X-ray diffraction using a synchrotron radiation source. The preferred c-axis orientation normal to the surface depended on the crystallization temperature. The difference in the preferred c-axis orientations of the BLT films caused the difference in the hysteresis voltage width in the capacitance-voltage characteristics of Au/BLT/p-Si structures. Furthermore, the c-axis of the Bilayered structure was preferentially oriented and aligned in the in-plane direction. 相似文献
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MOD法制备的Bi3.25Nd0.75Ti3O12薄膜的铁电各向异性行为 总被引:1,自引:0,他引:1
采用金属有机分解法(MOD)在(111)Pt/Ti/SiO2/Si衬底上制备了含(117)成分的c轴择优取向和α轴择优取向的Bi3.25Nd0.75Ti3O12(BNT)薄膜.实验发现,BNT薄膜的品型结构主要依赖于预退火条件.电学性能测试表明,α轴择优取向的BNT薄膜具有高的剩余极化和矫顽场,较高的介电常数和介电损耗,以及较大的电容调谐率;而c轴择优取向的则相反.BNT薄膜具有同Bi4Ti3O12(BIT)薄膜相似的铁电各向异性行为. 相似文献
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利用固相反应制备的ZnO-Li_(2.2%)陶瓷靶和RF射频磁控溅射技术在Si(100)基片上制备了高度c轴择优取向的ZnO薄膜,XRD和电性能分析表明掺杂Li离子改善了ZnO靶材的结构和性能,同时研究了不同RF溅射温度对ZnO薄膜结构与取向的影响;然后采用sol-gel前驱单体薄膜制备方法,以ZnO为过渡层淀积PZT薄膜,探讨高度c轴(002)择优取向ZnO薄膜对PZT薄膜结构与性能的影响,实验发现在PZT/ZnO异质结构中,致密、均匀和高度c轴择优取向的ZnO可作为晶核,促进PZT钙钛矿结构转化、晶粒(110)择优取向生长,相应降低PZT薄膜的退火温度. 相似文献
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H. Jin J. ZhouS.R. Dong B. FengJ.K. Luo D.M. WangW.I. Milne C.Y. Yang 《Thin solid films》2012,520(15):4863-4870
Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. 相似文献
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热退火对射频反应溅射氮化铝薄膜场电子发射的影响 总被引:3,自引:0,他引:3
以氮气为反应气体;用射频反应溅射方法制备了AIN薄膜,结合XPS和XRD表征考察了热退火后处理对样品场电子发射性能的影响.实验表明,热退火是改善样品场发射稳定性的有效途径,样品经700℃退火后,发射电流的涨落从未退火前的135μA下降到20μA;并且发射的开启电压、发射电流的涨落和滞后等对退火温度表现出强烈的依赖性.文中认为,退火处理造成了薄膜结构的变化,引起表面电子亲和势特性以及电导特性的改变,进而影响了其发射特性 相似文献
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This work analyzes the effect of post-deposition rapid thermal annealing (RTA) on the crystal quality and the piezoelectric response of sputtered polycrystalline aluminium nitride (AlN) thin films. AlN films with mixed crystal texture were not significantly affected by RTA processing. However, in films exhibiting clear c-axis preferred orientation, the annealing produced a crystallization process, characterized by an increase in the grain size of the original crystallites, the growth of new small grains, and the reduction of defects. The improvement in the crystal quality was more evident in highly textured c-axis oriented films. However, the enhanced crystal quality of the films due to RTA was not accompanied by a significant improvement in the piezoelectric response. This is attributed to the presence of grains with opposite polarities that could not be rearranged through the RTA treatment. 相似文献